KR930020387U - 디램의 어드레스 멀티 플렉싱 회로 - Google Patents
디램의 어드레스 멀티 플렉싱 회로Info
- Publication number
- KR930020387U KR930020387U KR2019920002241U KR920002241U KR930020387U KR 930020387 U KR930020387 U KR 930020387U KR 2019920002241 U KR2019920002241 U KR 2019920002241U KR 920002241 U KR920002241 U KR 920002241U KR 930020387 U KR930020387 U KR 930020387U
- Authority
- KR
- South Korea
- Prior art keywords
- multiplexing circuit
- dram address
- address multiplexing
- dram
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019920002241U KR0129734Y1 (ko) | 1992-02-17 | 1992-02-17 | 디램의 어드레스 멀티 플렉싱 회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019920002241U KR0129734Y1 (ko) | 1992-02-17 | 1992-02-17 | 디램의 어드레스 멀티 플렉싱 회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930020387U true KR930020387U (ko) | 1993-09-24 |
KR0129734Y1 KR0129734Y1 (ko) | 1999-02-01 |
Family
ID=19329025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019920002241U KR0129734Y1 (ko) | 1992-02-17 | 1992-02-17 | 디램의 어드레스 멀티 플렉싱 회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0129734Y1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557572B1 (ko) * | 1998-12-30 | 2006-05-22 | 주식회사 하이닉스반도체 | 전력소모를 방지한 데이터 리프레쉬 입력장치 |
-
1992
- 1992-02-17 KR KR2019920002241U patent/KR0129734Y1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100557572B1 (ko) * | 1998-12-30 | 2006-05-22 | 주식회사 하이닉스반도체 | 전력소모를 방지한 데이터 리프레쉬 입력장치 |
Also Published As
Publication number | Publication date |
---|---|
KR0129734Y1 (ko) | 1999-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69331940D1 (de) | Spaltenadressgeneratorschaltung | |
DE69614953D1 (de) | Schaltungsanordnung | |
KR960012008A (ko) | 다이나믹형 메모리 | |
DE69130448T2 (de) | Adressenerzeugungsschaltung | |
DE69616479D1 (de) | Schaltungsanordnung | |
DE69317944T2 (de) | Integrierte Speicherschaltung | |
DE69616483D1 (de) | Schaltungsanordnung | |
DE59304283D1 (de) | Schaltungsanordnung | |
DE69129739D1 (de) | Speicherschaltung | |
KR930020387U (ko) | 디램의 어드레스 멀티 플렉싱 회로 | |
DE59306294D1 (de) | Speicher-einrichtung | |
ATA75996A (de) | Schaltungsanordnung | |
KR930024322U (ko) | 디램의 비트라인 분리회로 | |
KR940023434U (ko) | 디램 리프레쉬 회로 | |
KR930011762U (ko) | 디램 리프레쉬 회로 | |
KR940018375U (ko) | 다이나믹 포커스 회로 | |
KR950023900U (ko) | 디램의 어드레스 구동회로 | |
DE69616495D1 (de) | Schaltungsanordnung | |
KR940006491U (ko) | 디램 모듈 | |
DE59303835D1 (de) | Schaltungsanordnung | |
DE29516831U1 (de) | Sparschaltung | |
DE9209570U1 (de) | Schaltungsanordnung | |
KR950009828U (ko) | 디램 자동 리프레쉬 회로 | |
KR930003284U (ko) | 어드레스 발생회로 | |
DE69422113T2 (de) | DRAM-Steuerschaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20040719 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |