KR930017191A - Manufacturing Method of Semiconductor Memory Device - Google Patents
Manufacturing Method of Semiconductor Memory Device Download PDFInfo
- Publication number
- KR930017191A KR930017191A KR1019920000394A KR920000394A KR930017191A KR 930017191 A KR930017191 A KR 930017191A KR 1019920000394 A KR1019920000394 A KR 1019920000394A KR 920000394 A KR920000394 A KR 920000394A KR 930017191 A KR930017191 A KR 930017191A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon
- oxide film
- memory device
- manufacturing
- semiconductor memory
- Prior art date
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Abstract
본 발명은 SOI구조를 갖는 DRAM의 고집적화 및 누설 전류방직에 적당하도록 한 반도체 메모리 소자의 제조방법에 관한 것으로, 종래에는 기판을 플레이트를 사오하므로 누설 전류를 막을 수 없으며 노드를 만드는데 두꺼운 에피층을 사용하므로 공정이 어렵고 트렌치를 깊이 형성하면 상기 문제가 더욱 악화되는 결점이 있었으나 본 발명에서는 트레치 표면에 산화막을 형성하고 두꺼운 에피층 대신 폴리실리콘을 사용하여 메모리 소자의 성능을 향상시켜 상기 결점을 개선시킬 수 있는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor memory device suitable for high integration and leakage current weaving of DRAMs having an SOI structure. In the related art, a thick epitaxial layer is used to form a node because a plate is used as a substrate. Therefore, the process is difficult and the drawback of the problem is exacerbated when the trench is deeply formed, but in the present invention, an oxide film is formed on the surface of the trench and polysilicon is used instead of a thick epitaxial layer to improve the performance of the memory device. It can be.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 SOI구조를 갖는 메모리 소자를 나타낸 단면도, 제3도는 제2도에 따른 공정단면도.2 is a cross-sectional view showing a memory device having an SOI structure of the present invention, and FIG. 3 is a process cross-sectional view according to FIG.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920000394A KR930017191A (en) | 1992-01-14 | 1992-01-14 | Manufacturing Method of Semiconductor Memory Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920000394A KR930017191A (en) | 1992-01-14 | 1992-01-14 | Manufacturing Method of Semiconductor Memory Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR930017191A true KR930017191A (en) | 1993-08-30 |
Family
ID=65515310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920000394A KR930017191A (en) | 1992-01-14 | 1992-01-14 | Manufacturing Method of Semiconductor Memory Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930017191A (en) |
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1992
- 1992-01-14 KR KR1019920000394A patent/KR930017191A/en active Search and Examination
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