KR950004547A - Manufacturing method of semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device in which a capacitor capacity is maximized within a limited area in order to increase a memory capacity of a memory device, a DRAM.

To this end, defining an active region and an isolation region on a semiconductor substrate, forming a field isolation layer for isolation of the device in the isolation region, and forming a transistor by sequentially forming a gate insulating film, a gate electrode, and an impurity region in the active region; Forming a trench having a predetermined depth and width between the isolation region and the impurity region, forming a first insulating layer in the trench region except for a portion in contact with the impurity region, and forming a capacitor on the first insulating layer Forming a first conductive layer of a first electrode, forming a second insulating film over the first conductive layer of the capacitor first electrode except for a portion contacting the impurity region, and forming a capacitor on the second insulating film Forming a second electrode of the capacitor and forming a third insulating film on the second electrode of the capacitor And forming a first electrode by forming a second conductive layer on the third insulating film and the first conductive layer.

Description

Manufacturing method of semiconductor device

Since this is an open matter, no full text was included.

2 is a manufacturing process diagram of a semiconductor device according to the present invention.

Claims (4)

An active region and an isolation region are defined on the semiconductor substrate, and a field isolation film 12 for isolation of the device is formed in the isolation region, and a gate insulating layer 13, a gate electrode 14, and an impurity region 15 ( 15 ') to form a transistor, forming a trench having a predetermined depth and width between the isolation region and the impurity region 15, except for the portion in contact with the impurity region 15 in the trench region. Forming a first insulating layer 16 on the portion, forming a first conductive layer 17 of the capacitor first electrode on the first insulating layer, and impurity on the first conductive layer 17 of the capacitor first electrode Forming a second insulating film 18 on the remaining portions except for the portion in contact with the region 15, forming a second electrode 19 of a capacitor on the second insulating film 18, and forming a second electrode of the capacitor. To form a third insulating film 20 thereon. And forming the third insulating layer 20, and forming a first electrode 22 by forming a second conductive layer on the third insulating layer 20 and the first conductive layer 21. A method for manufacturing a semiconductor device. The method of claim 1, wherein the first electrode (22) is formed by connecting a first conductive layer (17) and a second conductive layer (21) to each other. The method of manufacturing a semiconductor device according to claim 1, wherein the first to third insulating films (16, 18, 20) are formed by selecting one of an oxide film and a nitride film. The method of manufacturing a semiconductor device according to claim 1, wherein the first electrode (22) and the second electrode (19) are formed of doped polysilicon. ※ Note: The disclosure is based on the initial application.