KR930014901A - Manufacturing Method of Semiconductor Resistance Device - Google Patents
Manufacturing Method of Semiconductor Resistance Device Download PDFInfo
- Publication number
- KR930014901A KR930014901A KR1019910025173A KR910025173A KR930014901A KR 930014901 A KR930014901 A KR 930014901A KR 1019910025173 A KR1019910025173 A KR 1019910025173A KR 910025173 A KR910025173 A KR 910025173A KR 930014901 A KR930014901 A KR 930014901A
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- KR
- South Korea
- Prior art keywords
- layer
- resistance value
- resistance
- manufacturing
- resistive
- Prior art date
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
본 발명은 반도체 전항소자의 제조방법에 관한 것으로, 종래에는 저항의 저항값을 저항의 길이로 조정하기 때문에 저항값이 큰 경우엔 길이를 길게해야 하므로 집적회로상에서는 면적이 커지는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor switching device. In the related art, since the resistance value of the resistor is adjusted to the length of the resistor, when the resistance value is large, the length has to be lengthened.
이와같은 종래의 결함을 감안하여 본 발명은 저항의 둘레에 인덕턴스를 만들어 이때 발생하는 자기장을 이용하여 저항내에 흐르는 전하량을 조정하여 저항값을 가변할 수 있도록 함으로써 집적회로상에서 제조시 적은 면적에 다양한 저항값을 가질 수 있도록 함과 아울러 저항값의 크기가 매우 큰 범위에서 변환 가능하도록 한 효과가 있다.In view of such a conventional defect, the present invention creates an inductance around the resistance, and adjusts the amount of charge flowing in the resistance by using a magnetic field generated at this time so that the resistance value can be varied so that various resistances in a small area when manufacturing on an integrated circuit are varied. In addition to having a value, there is an effect that the resistance value can be converted in a very large range.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명 반도체 저항소자의 구조도,2 is a structural diagram of a semiconductor resistor of the present invention,
제3도의 (가) 내지 (바)는 본 발명에 따른 반도체 저항소자의 제조과정,(A) to (B) of Figure 3 is a manufacturing process of a semiconductor resistor device according to the present invention,
제4도의 (가) 및 (나)는 자기장형성시 저항값에 대한 설명도.(A) and (b) of FIG. 4 are explanatory diagrams of the resistance values in forming the magnetic field.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910025173A KR930014901A (en) | 1991-12-30 | 1991-12-30 | Manufacturing Method of Semiconductor Resistance Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910025173A KR930014901A (en) | 1991-12-30 | 1991-12-30 | Manufacturing Method of Semiconductor Resistance Device |
Publications (1)
Publication Number | Publication Date |
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KR930014901A true KR930014901A (en) | 1993-07-23 |
Family
ID=67345749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910025173A KR930014901A (en) | 1991-12-30 | 1991-12-30 | Manufacturing Method of Semiconductor Resistance Device |
Country Status (1)
Country | Link |
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KR (1) | KR930014901A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100442600B1 (en) * | 2002-04-04 | 2004-08-02 | 삼성전자주식회사 | Structure of optical bench and method for manufacturing radio frequency impedance matching resistor |
-
1991
- 1991-12-30 KR KR1019910025173A patent/KR930014901A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100442600B1 (en) * | 2002-04-04 | 2004-08-02 | 삼성전자주식회사 | Structure of optical bench and method for manufacturing radio frequency impedance matching resistor |
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