KR930014901A - Manufacturing Method of Semiconductor Resistance Device - Google Patents

Manufacturing Method of Semiconductor Resistance Device Download PDF

Info

Publication number
KR930014901A
KR930014901A KR1019910025173A KR910025173A KR930014901A KR 930014901 A KR930014901 A KR 930014901A KR 1019910025173 A KR1019910025173 A KR 1019910025173A KR 910025173 A KR910025173 A KR 910025173A KR 930014901 A KR930014901 A KR 930014901A
Authority
KR
South Korea
Prior art keywords
layer
resistance value
resistance
manufacturing
resistive
Prior art date
Application number
KR1019910025173A
Other languages
Korean (ko)
Inventor
김기철
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910025173A priority Critical patent/KR930014901A/en
Publication of KR930014901A publication Critical patent/KR930014901A/en

Links

Landscapes

  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

본 발명은 반도체 전항소자의 제조방법에 관한 것으로, 종래에는 저항의 저항값을 저항의 길이로 조정하기 때문에 저항값이 큰 경우엔 길이를 길게해야 하므로 집적회로상에서는 면적이 커지는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor switching device. In the related art, since the resistance value of the resistor is adjusted to the length of the resistor, when the resistance value is large, the length has to be lengthened.

이와같은 종래의 결함을 감안하여 본 발명은 저항의 둘레에 인덕턴스를 만들어 이때 발생하는 자기장을 이용하여 저항내에 흐르는 전하량을 조정하여 저항값을 가변할 수 있도록 함으로써 집적회로상에서 제조시 적은 면적에 다양한 저항값을 가질 수 있도록 함과 아울러 저항값의 크기가 매우 큰 범위에서 변환 가능하도록 한 효과가 있다.In view of such a conventional defect, the present invention creates an inductance around the resistance, and adjusts the amount of charge flowing in the resistance by using a magnetic field generated at this time so that the resistance value can be varied so that various resistances in a small area when manufacturing on an integrated circuit are varied. In addition to having a value, there is an effect that the resistance value can be converted in a very large range.

Description

반도체 저항소자의 제조방법Manufacturing Method of Semiconductor Resistance Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명 반도체 저항소자의 구조도,2 is a structural diagram of a semiconductor resistor of the present invention,

제3도의 (가) 내지 (바)는 본 발명에 따른 반도체 저항소자의 제조과정,(A) to (B) of Figure 3 is a manufacturing process of a semiconductor resistor device according to the present invention,

제4도의 (가) 및 (나)는 자기장형성시 저항값에 대한 설명도.(A) and (b) of FIG. 4 are explanatory diagrams of the resistance values in forming the magnetic field.

Claims (2)

기판(1)의 표면위에 저항층(2)을 부분적으로 형성시킨 다음 그 저항층 둘레에 인덕턴스층(3)을 형성시키고, 상기 저항층(2) 및 인덕턴스층(3) 위에 에어브리지를 위한 1차 포토레지스터층(4)을 형성한 후 연결 접촉부위를 형성하기 위하여 일정폭의 홈을 내고 금속층(5)을 증착시키며, 상기 금속층(5) 위에 2차 포토레지스터층(6), Au층(7)을 순차적으로 성장시킨 후 상기 2차 포토레지스터(6)을 제거하고 다시 금속층(5) 및 1차 포토레지스터층(4)을 제거하여 이루어짐을 특징으로 하는 반도체 저항소자의 제조방법.Form a resistive layer 2 partially on the surface of the substrate 1 and then form an inductance layer 3 around the resistive layer, and for air bridge on the resistive layer 2 and the inductance layer 3. After forming the primary photoresist layer 4, a groove having a predetermined width and a metal layer 5 are deposited to form a connection contact portion, and a secondary photoresist layer 6 and an Au layer are formed on the metal layer 5. 7) and sequentially growing the second photoresist (6) and the metal layer (5) and the first photoresist layer (4) to remove the semiconductor resistive device characterized in that it is made. 제1항에 있어서, 상기 저항층(2)의 저항값은 인덕턴스층(3)에 가하는 전류를 주기적으로 끊어 주고, 그 끊어주는 주기를 변화시킴으로 저항값을 가변하도록 함을 특징으로 하는 반도체 저항소자의 제조방법.2. The semiconductor resistance element according to claim 1, wherein the resistance value of the resistance layer 2 periodically interrupts the current applied to the inductance layer 3, and changes the resistance value by changing the interruption period. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910025173A 1991-12-30 1991-12-30 Manufacturing Method of Semiconductor Resistance Device KR930014901A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910025173A KR930014901A (en) 1991-12-30 1991-12-30 Manufacturing Method of Semiconductor Resistance Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910025173A KR930014901A (en) 1991-12-30 1991-12-30 Manufacturing Method of Semiconductor Resistance Device

Publications (1)

Publication Number Publication Date
KR930014901A true KR930014901A (en) 1993-07-23

Family

ID=67345749

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910025173A KR930014901A (en) 1991-12-30 1991-12-30 Manufacturing Method of Semiconductor Resistance Device

Country Status (1)

Country Link
KR (1) KR930014901A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442600B1 (en) * 2002-04-04 2004-08-02 삼성전자주식회사 Structure of optical bench and method for manufacturing radio frequency impedance matching resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442600B1 (en) * 2002-04-04 2004-08-02 삼성전자주식회사 Structure of optical bench and method for manufacturing radio frequency impedance matching resistor

Similar Documents

Publication Publication Date Title
KR960012550A (en) Manufacturing Method of Semiconductor Device
KR930014901A (en) Manufacturing Method of Semiconductor Resistance Device
KR940010236A (en) Glass mask for semiconductor device and manufacturing method thereof
JPS5571055A (en) Semiconductor device and its manufacturing method
JP3290452B2 (en) Negative resistance type bistable circuit and control method of the negative resistance
KR950025937A (en) Pad Formation Method of Semiconductor Device
KR920010745A (en) Resistive element formation method of semiconductor device
JPH02199864A (en) Tungsten thin-film resistor
JPS55125645A (en) Production of semiconductor device
JPS56133863A (en) Semiconductor device
JPS5680152A (en) Thin-film type integrated circuit device
KR930011294A (en) MOSFET manufacturing method
KR970007825A (en) How to make thin film magnetic head
JPS54133087A (en) Semiconductor electronic switch circuit element
KR970053871A (en) Resistance manufacturing method of semiconductor device improving temperature characteristics
KR970054322A (en) Manufacturing method of fast logic device
KR950012764A (en) Method of manufacturing thin film transistor
KR930006912A (en) How to embed a transformer in an IC
KR950021761A (en) Method of manufacturing thin film transistor
JPS56125865A (en) Coil
KR940018930A (en) Planarization method of semiconductor device
JPS6235672A (en) Darlington transistor
KR930011212A (en) Semiconductor Cell Manufacturing Method Using Epi-Si Deposition
KR940016495A (en) Tapered Metal Electrode Formation Method
KR920015459A (en) Method of manufacturing phase shift mask of semiconductor memory device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination