KR930011124A - 웨이퍼단면 에칭방법 및 에칭장치 - Google Patents

웨이퍼단면 에칭방법 및 에칭장치 Download PDF

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KR930011124A
KR930011124A KR1019920021049A KR920021049A KR930011124A KR 930011124 A KR930011124 A KR 930011124A KR 1019920021049 A KR1019920021049 A KR 1019920021049A KR 920021049 A KR920021049 A KR 920021049A KR 930011124 A KR930011124 A KR 930011124A
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South Korea
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etching
wafer
roller
face
section
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KR1019920021049A
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KR0121548B1 (ko
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유키히코 테사사와
마코토 하마노
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엔야 료오조오
카부시키가이샤 엔야시스템
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Publication of KR930011124A publication Critical patent/KR930011124A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Abstract

웨이퍼 단면만 에칭하는 에칭방법 및 그 장치에 관한 것이다. 웨이퍼는 척에서 지지된 상태로 회진한다. 이 웨이퍼의 단면에 에칭로울러가 접촉한다. 에칭로울러에는 공급로울러를 매개체로 하여 에칭액이 공급되고 있다. 그러므로, 상기한 웨이퍼의 단면에는 미량의 에칭액이 부착하여 웨이퍼의 단면만 에칭된다.
상기한 웨이퍼가 회진할 때에, 웨이퍼의 단면에는 순수세정로울러도 접촉한다.
이 세정로울러에 의해 웨이퍼는 단면이 에칭되는 동시에 깨끗한 물에 의해 세척된다.
웨이퍼의 평면으로는, 원주면을 향하여 링형상으로 질소 가스가 분출되고 있으며, 에칭액의 가스는 웨이퍼의 평면을 따라 흘러 들어가지 않는다.

Description

웨이퍼단면 에칭방법 및 에칭장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 웨이퍼단면 에칭장치의 개략적인 구성을 표시하는, 평면에서 본 설명도이다.
제2도는 본 발명에 의한 웨이퍼단면 에칭장치의 개략적인 구성을 표시하는, 정면에서 본 설명도이다.
제3도는 본 발명에 의한 에칭유닛의 부분을 주로 표시하는 단면도이다.

Claims (8)

  1. 웨이퍼(1)와, 그 웨이퍼(1)의 단면과 접촉하는 에칭로울러(7)를 접촉상태에서 회전시키고, 에칭로울러 (7)의 원주면에 에칭액을 공급하며, 에칭로울러(7)를매개체로 하여, 상기한 웨이퍼(1)의 단면에 에칭액을 부착시켜서 에칭처리하는 것을 특징으로 하는 웨이퍼 단면 에칭방법.
  2. 제1항에 있어서, 상기한 에칭단면에 에칭액을 부착시킨 후, 상기한 웨이퍼(1)의 단면을 순수세정로울러(22)로 세정하는 것을 특징으로 하는 웨이퍼단면 에칭방법.
  3. 웨이퍼(1)를 지지한 상태로 회전시키는 척장치(2), 웨이퍼(1)의 단면을 향하여 개방되어 있으며 내부에는 개방부(5)와 면하고 있는 에칭로울러(7)와 에칭로울러(7)의 원주면에 에칭액을 공급하는 장치가 실치된 에칭유닛(3), 상기한 웨이퍼(1)의 평면을 따라서 상기한 에칭유닛(3)의 개방부(5)를 향하여 흐르는 가스류를 형성하는 분출구(19),(20)등으로 구성되는 것을 특징으로 하는 웨이퍼단면 에칭장치.
  4. 제3항에 있어서, 상기한 에칭액을 공급하는 장치가 상기한 에칭로울러(7)와 접촉하여 회전하면서 에칭액을 에칭로울러(7)에 공급하는 공급로울러(8)인 것을 특징으로 하는 웨이퍼단면 에칭장치.
  5. 제3항에 있어서, 상기한 웨이퍼(1)의 단면과 접촉하여 단면을 세정하는 순수세정로울러(22)가 설치된 세정유닛(4)을 포함하여 구성되는 것을 특징으로 하는 웨이퍼단면 에칭장치.
  6. 제3항에 있어서, 상기한 에칭로울러(7)는 웨이퍼(1)의 단면에 동시에 접촉하는 복수개의 에칭로울러(7)로 구성되어 있는 것을 특징으로 하는 웨이퍼단면 에칭장치.
  7. 제3항에 있어서, 상기한 에칭로울러는 1개의 공급로울러(27)와 접속하여 회전하는 한쌍의 에칭로울러(28),(28)로 구성되어 있는 것을 특징으로 하는 웨이퍼단면 에칭장치.
  8. 제7항에 있어서, 상기한 한쌍의 에칭로울러(28), (28)는 상기한 공급로울러(27)에 대해서 요동가능하게 설치되어 있는 것을 특징으로 하는 웨이퍼단면 에칭장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920021049A 1991-11-20 1992-11-10 웨이퍼단면 에칭방법 및 에칭장치 KR0121548B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP91-329765 1991-11-20
JP32976591 1991-11-20
JP92-279487 1992-09-24
JP4279487A JPH0715897B2 (ja) 1991-11-20 1992-09-24 ウエ−ハ端面エッチング方法及び装置

Publications (2)

Publication Number Publication Date
KR930011124A true KR930011124A (ko) 1993-06-23
KR0121548B1 KR0121548B1 (ko) 1997-11-11

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Application Number Title Priority Date Filing Date
KR1019920021049A KR0121548B1 (ko) 1991-11-20 1992-11-10 웨이퍼단면 에칭방법 및 에칭장치

Country Status (6)

Country Link
US (1) US6063232A (ko)
EP (1) EP0544131B1 (ko)
JP (1) JPH0715897B2 (ko)
KR (1) KR0121548B1 (ko)
DE (1) DE69217843T2 (ko)
TW (1) TW209307B (ko)

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Also Published As

Publication number Publication date
US6063232A (en) 2000-05-16
JPH0715897B2 (ja) 1995-02-22
EP0544131A1 (en) 1993-06-02
JPH05206102A (ja) 1993-08-13
DE69217843T2 (de) 1997-06-12
KR0121548B1 (ko) 1997-11-11
EP0544131B1 (en) 1997-03-05
DE69217843D1 (de) 1997-04-10
TW209307B (ko) 1993-07-11

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