KR930009084A - Method of manufacturing stack capacitor of dirmcell - Google Patents

Method of manufacturing stack capacitor of dirmcell Download PDF

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Publication number
KR930009084A
KR930009084A KR1019910018223A KR910018223A KR930009084A KR 930009084 A KR930009084 A KR 930009084A KR 1019910018223 A KR1019910018223 A KR 1019910018223A KR 910018223 A KR910018223 A KR 910018223A KR 930009084 A KR930009084 A KR 930009084A
Authority
KR
South Korea
Prior art keywords
film
capacitor
forming
hld
manufacturing
Prior art date
Application number
KR1019910018223A
Other languages
Korean (ko)
Inventor
안병우
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910018223A priority Critical patent/KR930009084A/en
Publication of KR930009084A publication Critical patent/KR930009084A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 간단한 공정으로 캐패시터 증대효과를 크게 낼 수 있는 스택 캐패시터를 제조하는 방법으로서, 반도체 기판상에 소오스 드레인 및 게이트전극등 필요한 소자요소들을 통상의 방법으로 형성한 후, HLD막과 BPSG막을 번갈아가며 수회 증착하고 사진식각공정으로 콘택홀영역을 패터닝하고 HLD막과 BPSG막을 서로 다른 식각비율로 식각하여 HLD막과 BPSG막에 서로 단차가 생기게 하면서 콘택홀을 형성하고, 폴리실리콘을 증착하여 캐패시터의 저장전극을 형성하고, 유전체막을 입하며, 캐패시터의 플레이트 전극을 형성하는 공정을 구비하는 디렘 셀의 스택 캐패시터 제조방법이다.The present invention is a method of manufacturing a stack capacitor that can greatly increase the capacitor increase effect in a simple process, after forming the necessary element elements such as source drain and gate electrode on a semiconductor substrate in a conventional manner, alternately HLD film and BPSG film Deposition several times, patterning the contact hole area by photolithography process, etching the HLD film and BPSG film at different etch rates to form stepped holes in the HLD film and BPSG film, forming contact holes, and depositing polysilicon A method of manufacturing a stack capacitor of a DRAM cell comprising the steps of forming a storage electrode, applying a dielectric film, and forming a plate electrode of the capacitor.

Description

디렘셀의 스택 캐패시터 제조방법Method of manufacturing stack capacitor of dirmcell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 본 발명의 제조방법을 설명하기 위한 도면.2 is a view for explaining the manufacturing method of the present invention.

Claims (1)

디렘 셀의 스택 캐패시터 제조방법에 있어서, 반도체 기판상에 소오스 드레인 및 게이트전극등 필요한 소자요소들을 통상의 방법으로 형성한 후, HLD막과 BPSG막을 번갈아가며 수회 증착하고, 사진식각공정으로 콘택홀영역을 패터닝하고 HLD막과 BPSG막을 서로 다른 식각비율로 식각하여 HLD막과 BPSG막에 서로 단차가 생기게 하면서 콘택홀을 형성하고, 폴리실리콘을 증착하여 캐패시터의 저장전극을 형성하고, 유전체막을 입하며, 캐패시터의 플레이트 전극을 형성하는 공정을 구비하는 디렘 셀의 스택 캐패시터 제조방법.In the method of manufacturing a stack capacitor of a DRAM cell, a required device element such as a source drain and a gate electrode is formed on a semiconductor substrate in a conventional manner, and then alternately deposited several times over an HLD film and a BPSG film, and a contact hole region is formed by a photolithography process. Patterning and etching the HLD film and BPSG film at different etching rates to form a stepped hole in the HLD film and the BPSG film, forming contact holes, depositing polysilicon to form a storage electrode of the capacitor, and depositing a dielectric film, A method for manufacturing a stack capacitor of a DRAM cell comprising the step of forming a plate electrode of a capacitor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910018223A 1991-10-16 1991-10-16 Method of manufacturing stack capacitor of dirmcell KR930009084A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910018223A KR930009084A (en) 1991-10-16 1991-10-16 Method of manufacturing stack capacitor of dirmcell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910018223A KR930009084A (en) 1991-10-16 1991-10-16 Method of manufacturing stack capacitor of dirmcell

Publications (1)

Publication Number Publication Date
KR930009084A true KR930009084A (en) 1993-05-22

Family

ID=67348458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910018223A KR930009084A (en) 1991-10-16 1991-10-16 Method of manufacturing stack capacitor of dirmcell

Country Status (1)

Country Link
KR (1) KR930009084A (en)

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