KR930007029B1 - Optical disk - Google Patents
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- KR930007029B1 KR930007029B1 KR1019910010077A KR910010077A KR930007029B1 KR 930007029 B1 KR930007029 B1 KR 930007029B1 KR 1019910010077 A KR1019910010077 A KR 1019910010077A KR 910010077 A KR910010077 A KR 910010077A KR 930007029 B1 KR930007029 B1 KR 930007029B1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
제1도는 종래 SiN보호막과 본 발명에 TbN보호막의 Kerr각(θk)의 변화를 비교 도시한 그래프.1 is a graph comparing changes in Kerr angle (θk) of a conventional SiN protective film and a TbN protective film according to the present invention.
제2도느 종래의 SiN보호막을 갖는 광디스크와 본 발명에 의한 TbN보호막을 갖는 광디스크의 SNR과 수명을 비교 도시하는 그래프.Fig. 2 is a graph showing a comparison between the SNR and the lifetime of an optical disk having a conventional SiN protective film and an optical disk having a TbN protective film according to the present invention.
본 발명은 광 디스크에 관한 것으로, 특히 내산화성이 강화되고, 굴절율이 높으며, θk가 증가되고 SNR(Singal to Noise Ratio, 잡음 대 신호비율)이 좋은 TbN 보호막을 갖는 광 디스크와 그의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disk, and more particularly, to an optical disk having a TbN protective film having enhanced oxidation resistance, a high refractive index, an increased θk, and a good SNR (Singal to Noise Ratio). will be.
종래의 광 디스크는 디스크기록면의 보호역할을 하는 보호층재료로 다음과 같은 것을 사용하고 있으며, 또한 사용재료에 따라서 광 디스크의 구조가 많이 달라진다. 일반적인 광 디스크의 보호막재료로는 유전체물질을 많이 사용한다. 예로서, 카바이드계의 유전체물질로는 SiC, 질화물계 유전체물질로는 Si3N4, 산화물계로는 SiO2등이 대표적이다.Conventional optical discs use the following as the protective layer material which serves as a protective role for the disc recording surface, and the structure of the optical disc varies greatly depending on the material used. As a protective film material of a general optical disk, a dielectric material is used a lot. For example, SiC is a nitride dielectric material, Si3N4 is a nitride dielectric material, and SiO2 is an oxide type.
이와같은 유전체 물질은 전자빔 방식이나 스퍼터링(Sputtering)방법에 의해 제조되고, 일반적으로는 두께가 약간의 차이가 있으나, 이러한 두께는 N4n의 두께로하여 조사하는 레이저빔의 에너지를 거의 모두 흡수할 수 있게 조절한다. 두번째 방법은 유전체 이외에 폴리머 물질등을 광 디스크 기판재료상에 도포하여 기록체를 보호하게 된다.Such a dielectric material is manufactured by electron beam method or sputtering method and generally has a slight difference in thickness, but this thickness is N4n so that almost all energy of the laser beam to be irradiated can be absorbed. Adjust In the second method, a recording material is protected by applying a polymer material or the like on the optical disk substrate material in addition to the dielectric.
상기와 같은 종래의 고아 디스크의 제조는 디스크기판을 PC(Poly-Carbonate), PMMA(Ploy-Methyl-Metacrylate)를 사용하고, 유전체 보호막재료로는 SiO2, SuO, SiN, Si2N3, AlN, ZnS중에서 선택하여 도포함으로서 제조하였다.In the manufacture of the conventional orphan disk as described above, the disk substrate is made of PC (Poly-Carbonate) or PMMA (Ploy-Methyl-Metacrylate). It was prepared as a coating.
그러나, 이러한 보호층을 갖는 종래의 광 디스크가 갖는 가장 큰 단점은 주위환경변화 및 시간경과에 따른 산화/부식이 쉽게 유발되고, 그중 안정성이 좋은 SiN의 경우에 있어서는 굴절율이 작아 출력신호의 SNR이 낮다는 점이다. 이처럼 종래 기술에 의한 광 디스크의 출력신호의 SNR이 낮은 것은 다음의 여러요인에 의해 발생된다. 즉, 첫째, 웜(WORM) 또는 이레이저블(Erasable) 광디스크의 경우에 기록층재료가 산화 및 부식환경에 몹시 약하여 정보기록 bit의 재료가 변화되어 SNR을 저하시키고, 둘째, 기록시 또는 재생시에 기판과 보호막사이에서, 또는 기판과 기록층사이에서의 열팽창 및 습도팽창계수의 차이로 정보가 손실되며, 셋째, 광자기 디스크의 경우에 SNR을 이루는 Kerr회전각(Kerr Rotation Angle : θk)이 작아지기 때문이다.However, the biggest disadvantage of the conventional optical disk having such a protective layer is that oxidation / corrosion is easily caused by changes in the environmental environment and time, and in the case of SiN having good stability, the refractive index is small and the SNR of the output signal is small. It is low. The low SNR of the output signal of the optical disk according to the prior art is caused by the following factors. That is, firstly, in the case of a worm or erasable optical disc, the recording layer material is very weak to the oxidizing and corrosive environment so that the information recording bit material is changed to lower the SNR. Information is lost due to the difference in thermal expansion and humidity expansion coefficients between the substrate and the protective film or between the substrate and the recording layer. Third, Kerr Rotation Angle (θk), which forms SNR in the case of magneto-optical disk, is small. For losing.
따라서 본 발명의 상기와 같은 종래의 보호피복층을 갖는 광 디스크의 단점을 해결하기 위한 것으로, 이하에서 본 발명에 대해 좀더 상세히 설명한다.Therefore, to solve the disadvantages of the optical disk having a conventional protective coating layer of the present invention, the present invention will be described in more detail below.
본 발명의 광 디스크에 사용되는 보호막재료는 TbN의 합성물질로써 Tb(Terbium)이 산소에 대하여 친화력이 강하므로 외부로부터 통과된 수증기/산호입자들이 트랩(trap)되어 기록층에 들어가지 못하므로 기록층의 산화 및 부식을 방지할 수 있다. 또한, TbN의 굴절율이 2.5로 SiN의 굴절율인 2.0에 비해 상당히 높으므로 SiN보호막에 비해 2배의 θk향상 효과가 나타난다. 따라서, SNR(=R.OK2)은 상당히 증가되는 효과가 나타난다(제1도 참조). 이처럼 굴절율이 크면 θk가 증가되는 이유는 θk가 X성분의 반사계수(Rx)와 Y성분의 반사계수(Rx)의 비로 나타나고, 또한 보호막의 굴절율이 3가지는 Rx성분의 반사계수를 줄여주게 되므로, 따라서 Rx성분의 크기가 줄어 들어 θk=(Ry/Rx)가 상대적으로 큰 값을 나타내기 때문이다.The protective film material used in the optical disk of the present invention is a synthetic material of TbN, and since Tb (Terbium) has a strong affinity for oxygen, water vapor / coral particles passed from the outside are trapped and cannot enter the recording layer. Oxidation and corrosion of the layers can be prevented. In addition, since the refractive index of TbN is 2.5, which is considerably higher than that of SiN, 2.0, the effect of improving the θk is doubled compared to that of the SiN protective film. Thus, the SNR (= R.OK2) has a significant increase effect (see also FIG. 1). The reason why θk increases when the refractive index is large is that θk is represented by the ratio of the reflection coefficient Rx of the X component and the reflection coefficient Rx of the Y component, and the three refractive indexes of the protective film reduce the reflection coefficient of the Rx component. Therefore, the size of the Rx component is reduced, so θk = (Ry / Rx) represents a relatively large value.
또한, 본 발명에 의한 TbN의 유전체층을 갖는 광 디스크는 다음의 방법으로 제조한다. 즉, 5.25inch의 poly-Carbonate(PC)기판에 TbN의 유전체막 재료를 사용하여 RF(Radio Frequency)스퍼터링방법에 의해 제조하였다. 이때의 타겟(Target)은 Tb타겟을 사용하였고, N2가스를 취입하는 리액티브 스퍼터링방식으로 실시하였다. 실시중 N2가스의 총 압력은 5mTorr, Ar : N2의 분말은 4 : 1로 하여 총 두께가 1000A(A=옹스트롬)되게 증착하였다. 그후, TbFeCo의 조성으로 이루어지는 기록층을 DC스퍼터링방식으로 피복하였는데 Ar의 총압력을 3mTorr의 등압상태로 유지하고 총 두께가 700A(A=옹스트롬)이 되도록 증착하였다. 또한, 최상층의 유전체 보호막은 상기 TbN유전체막 제조과정과 동이한 과정으로 실시하여 피복하였다.In addition, an optical disk having a TbN dielectric layer according to the present invention is produced by the following method. That is, a TbN dielectric film material was used on a 5.25 inch poly-Carbonate (PC) substrate and manufactured by RF (Radio Frequency) sputtering method. At this time, the target (Target) was used Tb target, it was carried out by the reactive sputtering method blowing the N2 gas. During the implementation, the total pressure of the N 2 gas was 5 mTorr, and the powder of Ar: N 2 was 4: 1, so that the total thickness was deposited to 1000A (A = angstrom). Thereafter, a recording layer made of TbFeCo was coated by DC sputtering, and the total pressure of Ar was maintained at an isostatic pressure of 3 mTorr and deposited so as to have a total thickness of 700 A (A = Angstrom). In addition, the uppermost dielectric protective film was coated by carrying out the same procedure as the TbN dielectric film manufacturing process.
상기와 같은 본 발명에 의해 제조된 TbN 보호층(유전체층)을 갖는 광 디스크의 성능 평가는 다음과 같다. 이 평가는 세가지, 즉 내식성실험, 내구성실험, kerr회전각(θk)에 의한 SNR강화 실험으로서 온도 섭씨 70도, 97%RH에서 200시간 유지후 SNR을 측정하였고 기록/재생을 반복하여 실시한 후 SNR측정을 실시하였다. 이상의 실험결과에 대한 데이타를 제2도에 도시한다. 제2도에서 SNR의 강화 및 부식등에 의한 SNR저하가 없음을 알 수 있다.The performance evaluation of the optical disk having the TbN protective layer (dielectric layer) produced by the present invention as described above is as follows. This evaluation is an SNR strengthening test based on three kinds: corrosion resistance test, durability test, and kerr rotation angle (θk). SNR was measured after 200 hours at 70 degrees Celsius and 97% RH. The measurement was performed. Data for the above experimental results are shown in FIG. In Figure 2 it can be seen that there is no SNR degradation due to the strengthening and corrosion of the SNR.
이상 설명한 바와같은 본 발명에 의한 TbN보호막(유전체층)을 갖는 광 디스크는 종래 광 디스크에 비해 다음과 같은 효과를 갖는다.The optical disk having the TbN protective film (dielectric layer) according to the present invention as described above has the following effects as compared to the conventional optical disk.
첫째, TbN보호막 내부에 포함된 Tb성분에 의해 수증기/산소입자가 기록층으로 들어가지 못하므로 시간 경과 및 환경변화에 의한 기록층의 열화가 발생하지 않으므로 출력신호의 SNR이 저하하지 않으며, 둘째, 본 발명에 의한 TbN보호막재료는 합성수지기판(예, PC,PNMA)과의 접착성이 좋아서 기록시 열팽창/습도팽창등에 의한 디스크의 변형을 방지할 수 있으며, 셋째, 굴절율이 크므로 광출력신호의 SNR을 높일 수 있는 Kerr회전각(θk)의 증대를 달성할 수 잇는 장점을 제공한다.First, since the water vapor / oxygen particles cannot enter the recording layer by the Tb component contained in the TbN protective film, the degradation of the recording layer does not occur due to the lapse of time and environmental changes, so the SNR of the output signal does not decrease. The TbN protective film material according to the present invention has good adhesiveness with synthetic resin substrates (e.g. PC, PNMA) to prevent deformation of the disk due to thermal expansion / humidity expansion during recording, and third, because the refractive index is large, It provides the advantage of achieving an increase in the Kerr rotational angle (θk) which can increase the SNR.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019910010077A KR930007029B1 (en) | 1991-06-18 | 1991-06-18 | Optical disk |
Applications Claiming Priority (1)
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KR1019910010077A KR930007029B1 (en) | 1991-06-18 | 1991-06-18 | Optical disk |
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KR930001155A KR930001155A (en) | 1993-01-16 |
KR930007029B1 true KR930007029B1 (en) | 1993-07-26 |
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KR1019910010077A KR930007029B1 (en) | 1991-06-18 | 1991-06-18 | Optical disk |
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1991
- 1991-06-18 KR KR1019910010077A patent/KR930007029B1/en not_active IP Right Cessation
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