JP2528173B2 - Optical recording medium - Google Patents

Optical recording medium

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Publication number
JP2528173B2
JP2528173B2 JP63328851A JP32885188A JP2528173B2 JP 2528173 B2 JP2528173 B2 JP 2528173B2 JP 63328851 A JP63328851 A JP 63328851A JP 32885188 A JP32885188 A JP 32885188A JP 2528173 B2 JP2528173 B2 JP 2528173B2
Authority
JP
Japan
Prior art keywords
film
optical recording
layer
magneto
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63328851A
Other languages
Japanese (ja)
Other versions
JPH02177035A (en
Inventor
昌彦 関谷
潔 千葉
多嘉之 石崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP63328851A priority Critical patent/JP2528173B2/en
Priority to CA002004936A priority patent/CA2004936C/en
Priority to DE68921308T priority patent/DE68921308T2/en
Priority to EP89122732A priority patent/EP0373539B1/en
Priority to KR1019890018547A priority patent/KR900010687A/en
Publication of JPH02177035A publication Critical patent/JPH02177035A/en
Priority to US07/715,024 priority patent/US5192626A/en
Application granted granted Critical
Publication of JP2528173B2 publication Critical patent/JP2528173B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 [利用分野] 本発明はレーザー等の光により情報の記録・再生・消
去等を行う光記録媒体に関する。更に詳細には、透明基
板上に膜面に垂直な方向に磁化容易方向を有した金属薄
膜よりなる光磁気記録層を形成し、磁気光学効果により
情報を記録,再生する光磁気記録に好適な、媒体性能並
びに耐環境性の秀れた光記録媒体に関する。
TECHNICAL FIELD The present invention relates to an optical recording medium for recording / reproducing / erasing information by using light from a laser or the like. More specifically, it is suitable for magneto-optical recording in which a magneto-optical recording layer made of a metal thin film having an easy magnetization direction in a direction perpendicular to the film surface is formed on a transparent substrate and information is recorded and reproduced by the magneto-optical effect. , An optical recording medium having excellent medium performance and environmental resistance.

[従来技術] 光記録媒体中でも光磁気記録媒体は高密度・大容量で
かつ書き換え可能な情報記録媒体としてその実用化が待
望されている。
[Prior Art] Among optical recording media, magneto-optical recording media are expected to be put to practical use as rewritable information recording media with high density and large capacity.

上述の光磁気記録媒体の記録層としては、例えば、特
開昭52−31703号公報記載のTbFe,特開昭58−73746号公
報記載のTbFeCo等、既に多くの提案がある。しかし、こ
れらの材料はその磁気光学特性の1つであるがカー(Ke
rr)回転角が0.3〜0.5゜と極めて小さく、記録された信
号の再生時のCNR(Carrier to Noise Ratio)が低いと
いう問題点がある。同時にこれらの材料は大半は酸化等
の腐食を起こし易いという耐久性の面での問題点もあ
る。そこで、これらの問題点を解決するため、基板と記
録層の間に光干渉層兼用保護層として透明誘電体層を設
け、光干渉効果すなわち光の多重反射を利用してKerr回
転角の向上をはかると同時に、基板側からの酸素等のガ
スの拡散を防止することが提案されている。このような
透明誘電体層としては、Si3N4,AlN,MgF2,ZnS等の窒化
物,弗化物,硫化物等で形成されることが好ましいとさ
れている。
Many proposals have already been made for the recording layer of the above-described magneto-optical recording medium, such as TbFe described in Japanese Patent Laid-Open No. 52-31703 and TbFeCo described in Japanese Patent Laid-Open No. 58-73746. However, these materials have one of its magneto-optical properties,
rr) The rotation angle is extremely small at 0.3 to 0.5 °, and there is a problem that the CNR (Carrier to Noise Ratio) at the time of reproducing the recorded signal is low. At the same time, most of these materials also have a problem in terms of durability in that they are susceptible to corrosion such as oxidation. Therefore, in order to solve these problems, a transparent dielectric layer is provided between the substrate and the recording layer as a protective layer that also serves as an optical interference layer, and the Kerr rotation angle is improved by utilizing the optical interference effect, that is, multiple reflection of light. At the same time, it has been proposed to prevent diffusion of gas such as oxygen from the substrate side. It is said that such a transparent dielectric layer is preferably formed of a nitride such as Si 3 N 4 , AlN, MgF 2 or ZnS, a fluoride, a sulfide or the like.

ところで、これらの中で耐環境性に秀れているといわ
れるZnS,Si3N4,AlN等について検討したところ、その製
膜速度が遅いこと、また、膜中ヒズミが大きく、特にプ
ラスチック基板上に多層膜を形成した場合、環境試験に
よりグループに沿った剥離等が生じる問題があり、耐酸
化性とは別の面で耐久性での問題があることがわかっ
た。また、Kerr回転角向上についても、いずれも屈折率
が2.0程度であるために、光の多重反射を利用しても0.5
〜0.7゜程度にまで増大するのが限界であり、各種仕様
に対応し得ない問題もある。従って実用化面からかかる
諸点、特にKerr回転角の向上,耐久性の向上の両面でよ
り一掃の改善が必要であると考えられる。
By the way, when we examined ZnS, Si 3 N 4 , AlN, etc., which are said to have excellent environmental resistance, among them, the film formation rate was slow, and the film had large defects, especially on the plastic substrate. It was found that when a multilayer film was formed on the film, there was a problem such as peeling along the group due to the environmental test, and there was a problem with durability in a different aspect from the oxidation resistance. In addition, with regard to the improvement of the Kerr rotation angle, since the refractive index is about 2.0 in all cases, even if the multiple reflection of light is used, it is 0.5.
There is a problem that it is not possible to meet various specifications because there is a limit to increase to ~ 0.7 °. Therefore, in terms of practical use, it is considered necessary to further improve the cleaning in terms of various points, especially the improvement of the Kerr rotation angle and the improvement of durability.

[発明の目的] 本発明はかかる現状に鑑みなされたもので、透明誘電
体層を改良して媒体性能が高く、耐久性の良い光記録媒
体を提供することを目的とするものである。すなわち、
具体的には前記記録媒体の誘電体層をその屈折率が比較
的大きなレベルで広範囲に調整できるものとすることに
より、各種仕様に応じた媒体を可能とすると共に光磁気
記録媒体においてはKerr回転角を増大し、媒体性能をア
ップすることを第1の目的とする。また該誘電体層を内
部応力が小さく、また接着性がよいものとすることによ
り、特に媒体の反り,基板と誘電体層界面の劣化による
割れ,剥離を防止し同時にピンホール等の欠陥の発生を
おさえ、媒体全体の耐久性を向上せしめることを第2の
目的とする。
[Object of the Invention] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an optical recording medium having improved medium performance and improved durability by improving the transparent dielectric layer. That is,
Specifically, by allowing the dielectric layer of the recording medium to be adjusted in a wide range at a relatively large level, the medium according to various specifications can be realized and the Kerr rotation can be achieved in the magneto-optical recording medium. The first purpose is to increase the angle and improve the medium performance. Further, by making the dielectric layer have a low internal stress and good adhesiveness, warpage of the medium, cracking and peeling due to deterioration of the interface between the substrate and the dielectric layer are prevented, and at the same time defects such as pinholes are generated. The second purpose is to suppress the durability and improve the durability of the entire medium.

[発明の構成,作用] 上述の目的は、以下の本発明により達成される。すな
わち、本発明は、保護層又は/及び光干渉層として透明
誘電体層を有する光記録媒体において、光記録媒体は透
明高分子基板上に、前記透明誘電体層、Ti膜又はTiとR
e、Cr、Taの少なくとも一つとの合金膜からなる透明金
属薄膜層、希土類金属と遷移金属の非晶質合金膜からな
る光磁気記録層をこの順序で具備したものであって、前
記透明誘電体層がIn又はSnの少なくとも一方とBi及び窒
素を含む非晶質の複合酸化物であることを特徴とする光
記録媒体である。
[Structure and Action of Invention] The above-mentioned object is achieved by the present invention described below. That is, the present invention is an optical recording medium having a transparent dielectric layer as a protective layer and / or an optical interference layer, wherein the optical recording medium is a transparent polymer layer, the transparent dielectric layer, the Ti film or the Ti and R layers.
A transparent metal thin film layer made of an alloy film of at least one of e, Cr, and Ta, and a magneto-optical recording layer made of an amorphous alloy film of a rare earth metal and a transition metal are provided in this order, The optical recording medium is characterized in that the body layer is an amorphous composite oxide containing at least one of In and Sn, Bi and nitrogen.

上述の本発明は以下のようにしてなされたものであ
る。すなわち、例えば光磁気記録媒体において誘電体層
として、酸化インジウム,酸化錫又はこれらの混合物を
用いた場合、透明基板との密着性が高く、高温高湿耐環
境性試験における亀裂や剥離は全く生じないという長所
はあるものの屈折率が低いために、光の多重反射による
Kerr回転角向上の効果が小さく、同時に記録を行う際の
レーザー光の閉じ込め効果が小さいために、媒体の記録
感度が低いという欠点がある。そこで酸化物として屈折
率の高い元素に着目し、該元素の添加によるIn又は/及
びSnの酸化物の改良を検討したところ、Biを添加するこ
とにより得られる酸化物は、驚くべきことに非晶質膜で
あり、その内部応力もその構成金属元素の各単独酸化物
膜より小さく、その屈折率もBiの添加量により2.0以上
の高いレベルで広範囲に調整でき、その上接着性もIn又
はSnの酸化物と同程度という光記録媒体の透明誘電体層
として理想に近い特性を有することを見出し、なされた
ものである。
The present invention described above has been made as follows. That is, for example, when indium oxide, tin oxide, or a mixture thereof is used as a dielectric layer in a magneto-optical recording medium, the adhesion to a transparent substrate is high, and cracks or peeling at high temperature and high humidity environment resistance test occur at all. It has the advantage that it does not exist, but due to its low refractive index, it is
Since the effect of improving the Kerr rotation angle is small and the effect of confining the laser beam at the time of recording is small, the recording sensitivity of the medium is low. Therefore, focusing on an element having a high refractive index as an oxide, and examining the improvement of In or / and Sn oxide by the addition of the element, the oxide obtained by adding Bi is surprisingly non- It is a crystalline film, its internal stress is smaller than that of each single oxide film of its constituent metal elements, and its refractive index can also be adjusted over a wide range at a high level of 2.0 or more by the addition amount of Bi, and also the adhesiveness is In or It was made by discovering that it has characteristics close to ideal as a transparent dielectric layer of an optical recording medium, which is about the same as Sn oxide.

更に上述の従来例の酸化インジウム,酸化錫またはこ
れらの混合物は電気伝導性が高いために、電子が寄与す
る熱伝導性が高く、記録を行う際に、記録したい部分か
らの熱拡散によりビットの形状が乱れるという欠点があ
る。ところが上述のBiを添加することにより電気伝導性
は失われ、熱伝導度を大幅に低減することができ、記録
ビット形状の乱れを抑えることができることを見出し
た。
Furthermore, since the above-described conventional indium oxide, tin oxide, or a mixture thereof has a high electric conductivity, it has a high thermal conductivity to which electrons contribute, and at the time of recording, due to thermal diffusion from the portion to be recorded, the bit There is a drawback that the shape is disturbed. However, it has been found that by adding Bi described above, the electrical conductivity is lost, the thermal conductivity can be significantly reduced, and the disorder of the recording bit shape can be suppressed.

上述の点で本発明に関わる複合酸化物はIn又はSnの少
なくとも一方とBiの酸化物で、粒界等がなくノイズレベ
ル面,耐食性,ガスバリヤ性等の面で有利な非晶質のも
のであればよく、Biの含有量が1at%以下という微量で
あっても非晶質になることを確認しており単なる保護層
として用いる場合には、特にその含有量に制限はない。
しかし大きな光干渉効果、具体的には光磁気記録のカー
回転角向上効果及びレーザー光の閉じ込め効果等を得た
い場合には、屈折率が2.0以上、より好ましくは2.10以
上必要といわれており、かかる光干渉層として用いる場
合にはBi含有量は6at%以上、更には12at%以上が好ま
しい。なお、これらの含有量であれば熱伝導度も大巾に
低減され、記録ビット形状の乱れを抑えることもでき
る。
From the above point of view, the complex oxide relating to the present invention is an oxide of at least one of In and Sn and Bi, and is an amorphous one which has no grain boundary and is advantageous in terms of noise level, corrosion resistance, gas barrier property, etc. It has been confirmed that even if the Bi content is as small as 1 at% or less, it becomes amorphous, and when it is used as a simple protective layer, the content is not particularly limited.
However, in order to obtain a large optical interference effect, specifically, a Kerr rotation angle improving effect of magneto-optical recording and a laser light confining effect, it is said that a refractive index of 2.0 or more, more preferably 2.10 or more is required, When used as such a light interference layer, the Bi content is preferably 6 at% or more, more preferably 12 at% or more. It should be noted that if these contents are included, the thermal conductivity is greatly reduced, and the disorder of the recording bit shape can be suppressed.

一方、Bi含有量が増加すると、高分子基板等との接着
力が低下し、媒体全体としての耐久性が低下する。ま
た、Bi含有量が多すぎると、屈折率が高くなりすぎて媒
体反射率が低下し、記録・再生装置の検出感度以下にな
ってしまう可能性がある。かかる点よりBi含有量は50at
%以下、更には40at%以下が好ましい。
On the other hand, when the Bi content increases, the adhesive force with the polymer substrate and the like decreases, and the durability of the medium as a whole decreases. On the other hand, if the Bi content is too high, the refractive index becomes too high, and the medium reflectance decreases, possibly lowering the detection sensitivity of the recording / reproducing apparatus. From this point, the Bi content is 50 at
% Or less, more preferably 40 at% or less.

その上で、以上の複合酸化物に窒素を含有させると検
討例から明らかなように屈折率が向上する効果があり、
窒素を含有させることが好ましいが、窒素含有量が多く
なると前述の接着力が低下する傾向がある。かかる点か
ら窒素含有量は数at%〜40at%の範囲が好ましい。
On top of that, the inclusion of nitrogen in the above composite oxide has the effect of improving the refractive index as is clear from the study examples.
It is preferable to contain nitrogen, but if the nitrogen content increases, the above-mentioned adhesive strength tends to decrease. From this point, the nitrogen content is preferably in the range of several at% to 40 at%.

なお、以上の本発明の複合酸化物には、上記のBi,In,
Sn,O,N以外の元素も不純物オーダーで含まれてよいこと
は言うまでもない。
Incidentally, the above composite oxide of the present invention, the above Bi, In,
It goes without saying that elements other than Sn, O and N may be included in the impurity order.

前記本発明の複合酸化物膜の製造方法としては、公知
の真空蒸着法,スパッタリング法等のPVD法、あるいはC
VD法等種々の薄膜形成法が適用できる。しかし、光記録
媒体としては高温高湿耐環境性試験で生じるハガレを生
じさせないために特にプラスチックス基板との接着性が
大きい条件で作製することが好ましい。このためにはス
パッタリング法が好ましい。中でもArとN2の混合ガスで
とスパッタリングが異常放電等が少なく安定運転面で好
ましい。
As the method for producing the complex oxide film of the present invention, a known vacuum deposition method, PVD method such as sputtering method, or C
Various thin film forming methods such as the VD method can be applied. However, the optical recording medium is preferably manufactured under the condition that the adhesiveness to the plastics substrate is particularly large in order not to cause peeling which occurs in the high temperature and high humidity environment resistance test. For this purpose, the sputtering method is preferable. Of these, sputtering with a mixed gas of Ar and N 2 is preferable in terms of stable operation with less abnormal discharge.

ところで本発明の光記録媒体は、前述の通り前記複合
酸化物を保護層又は光干渉層としたものであり、その他
の構成は特に限定されないことは本発明の趣旨から明ら
かである。例えば、光反射記録層,相変化光記録層,光
磁気記録層等公知の各種の光記録方式の光記録媒体に適
用できる。
By the way, it is apparent from the gist of the present invention that the optical recording medium of the present invention uses the composite oxide as a protective layer or an optical interference layer as described above, and the other configurations are not particularly limited. For example, it can be applied to optical recording media of various known optical recording systems such as a light reflection recording layer, a phase change optical recording layer, and a magneto-optical recording layer.

しかし、前述の本発明の複合酸化物の特性、特に大き
な光干渉効果が得られる点から、特に光磁気記録媒体に
有利に適用できる。光磁気記録媒体としては、以下のも
のが挙げられる。
However, since the characteristics of the complex oxide of the present invention described above, particularly a large optical interference effect, can be obtained, it can be advantageously applied to a magneto-optical recording medium. Examples of the magneto-optical recording medium include the following.

すなわち、光磁気記録層としては、光磁気効果により
記録,再生できるもの、具体的には膜面に垂直な方向に
磁化容易方向を有し任意の反転磁区を作ることにより光
磁気効果に基いて情報の記録再生が可能な磁性金属薄
膜、例えばFeTb合金系のFeTbCo合金,FeTbGd合金,NdDyFe
Co合金,Fe−Nd系の合金,Fe−Pr,Fe−Ce等の希土類金属
と遷移金属との非晶質合金膜、あるいはガーネット膜等
各種公知のものが適用できる。中でも本発明は酸化し易
い希土類金属と遷移金属との非晶質合金膜に効果的であ
る。
That is, the magneto-optical recording layer is one that can be recorded and reproduced by the magneto-optical effect, and specifically, it has an easy magnetization direction in a direction perpendicular to the film surface and creates an arbitrary reversal domain so that the magneto-optical effect is generated. A magnetic metal thin film capable of recording and reproducing information, for example, FeTb alloy-based FeTbCo alloy, FeTbGd alloy, NdDyFe
Various known materials such as Co alloy, Fe-Nd alloy, amorphous alloy film of rare earth metal such as Fe-Pr, Fe-Ce and transition metal, or garnet film can be applied. Above all, the present invention is effective for an amorphous alloy film of a rare earth metal and a transition metal which are easily oxidized.

その透明基板の材料としてはポリカーボネート樹脂,
アクリル樹脂,エポキシ樹脂,4−メチル−ペンテン樹脂
などまたそれらの共重合体等の高分子樹脂もしくはガラ
スなどが適用できる。中でも機械強度,耐候性,耐熱
性,透湿量の点でポリカーボネート樹脂が好ましく用い
られる。
The material of the transparent substrate is polycarbonate resin,
Acrylic resin, epoxy resin, 4-methyl-pentene resin and the like, polymer resins such as copolymers thereof, or glass can be applied. Among them, polycarbonate resin is preferably used in terms of mechanical strength, weather resistance, heat resistance and moisture permeability.

ところで、本発明の複合酸化物は前述の通り接着性,
膜の内部応力,ガスバリヤ性等の面で優れた特性を有し
ており、かかるポリカーボネート樹脂等の透明高分子基
板を用いた光磁気記録媒体において特に効果的である。
そしてこの構成において複合酸化物膜と光磁気記録膜と
の間に、さらに金属チタンもしくは金属チタン合金から
なる透明金属薄膜層を設けることが耐酸化性,耐透湿性
の面より好ましい。チタン合金として組み合わせる元素
はCr,Ta,Reの群から選ばれる少なくとも1種の金属であ
ることが耐酸性の面で好ましい。この金属チタンもしく
は金属チタン合金の膜厚は、記録・再生の面から50Å以
下であることが必要で、更に媒体のCNRを高めるという
点から20Å以下が好ましい。
By the way, as described above, the composite oxide of the present invention has adhesiveness,
The film has excellent properties such as internal stress and gas barrier property, and is particularly effective in a magneto-optical recording medium using a transparent polymer substrate such as a polycarbonate resin.
Further, in this structure, it is preferable to further provide a transparent metal thin film layer made of metal titanium or a metal titanium alloy between the composite oxide film and the magneto-optical recording film in terms of oxidation resistance and moisture permeation resistance. The element to be combined as the titanium alloy is preferably at least one metal selected from the group consisting of Cr, Ta and Re from the viewpoint of acid resistance. The film thickness of this metal titanium or metal titanium alloy needs to be 50 Å or less from the viewpoint of recording / reproducing, and is preferably 20 Å or less from the viewpoint of further increasing the CNR of the medium.

このように本発明は、高分子樹脂基板上に、前述の複
合酸化物よりなる透明誘電体層、上述のチタン又はチタ
ン合金膜よりなる透明金属薄膜層,光磁気記録層をこの
順序で具備した構成の光磁気記録媒体においてその効果
は顕著である。
As described above, the present invention comprises, on a polymer resin substrate, a transparent dielectric layer made of the above composite oxide, a transparent metal thin film layer made of the above titanium or titanium alloy film, and a magneto-optical recording layer in this order. The effect is remarkable in the magneto-optical recording medium having the structure.

なお、以上説明した光磁気記録媒体は、公知の通り光
磁気記録層の基板と反対側に裏面保護層を設ける構成、
更にはこれら構成の媒体を貼り合わせた両面媒体等の構
成等全て適用できる。
The magneto-optical recording medium described above has a configuration in which a back surface protective layer is provided on the opposite side of the magneto-optical recording layer from the substrate, as is known.
Further, all the configurations such as a double-sided medium in which the mediums having these configurations are attached can be applied.

裏面保護層を設ける構成としては、誘電体,金属等か
らなる無機保護層,感光性樹脂等の有機樹脂からなる有
機保護層,更には透明平板の貼り合わせ、及びこれらの
組み合わせ等が知られている。
Known configurations for providing the back surface protective layer include an inorganic protective layer made of a dielectric material or metal, an organic protective layer made of an organic resin such as a photosensitive resin, and further a transparent flat plate bonded together, or a combination thereof. There is.

誘電体保護層としては、膜表面から光磁気記録層への
酸素やH2Oの侵入を防ぐために、亀裂やピンホールの少
ない物質が好ましく、AlN,MgF2,ZnS,CeF3,AlF3・3NaF,S
i3N4,SiO,SiO2,Zr2O3,In2O3,SnO2などの窒化物,弗化
物,酸化物,又はこれらの混合体などが適用できる。特
に、本発明の前述のIn又はSnの少なくとも1元素とBiと
の複合酸化物は、耐久性試験による剥離・亀裂を生じな
いという理由から、かかる保護層としても適したもので
ある。
The dielectric protective layer, in order to prevent oxygen and of H 2 O from entering from the film surface to the magneto-optical recording layer, less material is preferably a crack or a pin hole, AlN, MgF 2, ZnS, CeF 3, AlF 3 · 3NaF, S
A nitride such as i 3 N 4 , SiO, SiO 2 , Zr 2 O 3 , In 2 O 3 or SnO 2 , a fluoride, an oxide, or a mixture thereof can be applied. In particular, the above-described composite oxide of at least one element of In or Sn and Bi of the present invention is suitable as such a protective layer because it does not cause peeling or cracking in the durability test.

また、光磁気記録層と上記複合酸化物等からなる誘電
体保護層の界面に存在する酸素や、酸化物保護層自身の
持つ遊離または結合不完全な酸素が光磁気記録層に侵入
するのをさらに抑えるため、光磁気記録層と該誘電体保
護層の間に、膜厚50Å以下の金属チタン膜もしくは前述
のチタン合金膜からなるバリヤ層を設けることが好まし
い。この金属チタンもしくは金属チタン合金からなるバ
リヤ層の膜厚は、記録時の感度の面から20Å以下が好ま
しい。
In addition, oxygen existing at the interface between the magneto-optical recording layer and the dielectric protective layer made of the above-mentioned composite oxide, or free or incompletely bonded oxygen of the oxide protective layer itself may enter the magneto-optical recording layer. In order to suppress further, it is preferable to provide a barrier layer composed of a titanium metal film or a titanium alloy film having a film thickness of 50 Å or less between the magneto-optical recording layer and the dielectric protective layer. The film thickness of the barrier layer made of metallic titanium or metallic titanium alloy is preferably 20 Å or less from the viewpoint of sensitivity during recording.

裏面保護層として金属保護層を用いる場合には、Al,C
u,Au,Ag,Si,Ti,Cr,Ta,Re,Zrまたはこれらの合金などか
らなる金属膜が適用できるが、記録時レーザービームス
ポットからの熱拡散を少なくするために熱伝導度の小さ
い物質、即ちTi,Cr,Ta,Re,またはこれらの合金からなる
金属膜が特に好ましい。以上の無機物保護層は公知の真
空蒸着法,スパッタリング法等で作製できる。
When using a metal protective layer as the back surface protective layer, Al, C
A metal film made of u, Au, Ag, Si, Ti, Cr, Ta, Re, Zr or alloys of these can be applied, but the thermal conductivity is small in order to reduce heat diffusion from the laser beam spot during recording. A metal film made of a material, that is, Ti, Cr, Ta, Re, or an alloy thereof is particularly preferable. The above inorganic protective layer can be produced by a known vacuum deposition method, sputtering method, or the like.

更に裏面保護層として前述の通り有機物保護層を用い
ることができる。かかる有機物保護層としては公知の各
種感光性樹脂等が適用でき、コーティング法等により形
成できる。なお有機保護層は前述の無機保護層と組み合
わせ、無機保護層が記録層に接するように配置して用い
ることが好ましい。裏面保護層としては上記各保護層の
組み合わせでもよい。なお裏面保護層は少なくとも記録
層の側面まで被覆するように設けるのが好ましい。
Further, as the back surface protective layer, the organic material protective layer can be used as described above. As the organic protective layer, various known photosensitive resins can be applied and can be formed by a coating method or the like. The organic protective layer is preferably used in combination with the above-mentioned inorganic protective layer so that the inorganic protective layer is in contact with the recording layer. The back surface protective layer may be a combination of the above respective protective layers. The back surface protective layer is preferably provided so as to cover at least the side surface of the recording layer.

なお、上述の各種保護層は光磁気記録媒体以外の例え
ば相変化型等の光記録媒体にも適用できることはその特
性等から明らかである。
It is apparent from the characteristics and the like that the various protective layers described above can be applied to, for example, a phase change type optical recording medium other than the magneto-optical recording medium.

上述の本発明の作用効果は以下のとおりである。 The effects of the present invention described above are as follows.

透明プラスチック基板を用い、膜面反射によるカー回
転角を大きくするため基板と光磁気記録層との間に透明
誘電体層を設けた光磁気記録媒体では、前述の通り、誘
電体膜として代表的な従来例のSiO,AlN,Si3N4,ZnS等を
用いてディスクを構成した場合、これらの媒体のKerr回
転角は0.5〜0.7゜であり、誘電体層における光の多重反
射の効果によるKerr回転角の向上がまだ十分とは言えな
い。これは、上記各誘電体の屈折率Nが1.9〜2.0程度と
小さいためであると考えられる。さらに、これら従来の
誘電体を用いた光磁気ディスクを高温高湿及び/又はヒ
ートサイクルによる耐久性試験を行うと、ディスクに亀
裂がはいり、光磁気特性が急激に劣化することが観察さ
れた。これは主にプラスチック基板界面での誘電体膜の
はがれに起因する。
In a magneto-optical recording medium in which a transparent plastic substrate is used and a transparent dielectric layer is provided between the substrate and the magneto-optical recording layer in order to increase the Kerr rotation angle due to film surface reflection, as described above, a typical dielectric film is used. When a disk is constructed by using the conventional SiO, AlN, Si 3 N 4 , ZnS, etc., the Kerr rotation angle of these media is 0.5 to 0.7 °, which is due to the effect of multiple reflection of light in the dielectric layer. The improvement in the Kerr rotation angle is not yet sufficient. It is considered that this is because the refractive index N of each dielectric is as small as 1.9 to 2.0. Furthermore, when a magneto-optical disk using these conventional dielectrics was subjected to a durability test by high temperature and high humidity and / or heat cycle, it was observed that cracks were introduced into the disk and the magneto-optical characteristics were rapidly deteriorated. This is mainly due to peeling of the dielectric film at the interface of the plastic substrate.

これに対して、上述の構成で透明誘電体層に前述のI
n,Snの少なくとも一方とBiの複合酸化物膜を用いた本発
明の光磁気ディスクではKerr回転角は0.9〜1.1゜と大巾
に増大させることができると同時に、プラスチック基板
との界面での劣化による剥離や亀裂は生じない。これは
該複合酸化膜の屈折率Nが2.0〜2.4と大きなレベルで選
択でき、更にIn又は/及びSnの酸化物の特性が維持さ
れ、ポリカーボネート基板等の有機高分子樹脂基板との
親和性が大きいことによるものと思われる。これらの効
果は媒体性能向上をはかると共に、通常の環境下での長
期安定性ならびにヒートサイクル,ヒートショックに対
して特に有効となる。
On the other hand, the transparent dielectric layer having the above-mentioned configuration has the above-mentioned I
In the magneto-optical disk of the present invention using at least one of n and Sn and a Bi composite oxide film, the Kerr rotation angle can be greatly increased to 0.9 to 1.1 °, and at the same time, at the interface with the plastic substrate. No peeling or cracking due to deterioration. This can be selected at a large level such that the refractive index N of the composite oxide film is 2.0 to 2.4, the characteristics of the oxide of In and / or Sn are maintained, and the affinity with an organic polymer resin substrate such as a polycarbonate substrate is maintained. It seems that it is big. These effects not only improve the performance of the medium, but are particularly effective for long-term stability under normal environment, heat cycle, and heat shock.

更に、媒体の記録・再生・消去の際に生じるノイズの
原因として、従来の結晶構造の誘電体膜ではその結晶粒
界に起因する光の散乱,記録ビットの乱れが挙げられる
が、上述の複合誘電体膜は非晶質であり、且つ熱伝導度
が小さいために、かかる散乱,乱れは殆んどなく、前述
の従来例の光磁気ディスクに比べ、記録・再生時のノイ
ズが低減できることがわかった。
Further, as a cause of noise generated at the time of recording / reproducing / erasing of a medium, in a conventional dielectric film having a crystal structure, light scattering and disorder of a recording bit due to its crystal grain boundary are mentioned. Since the dielectric film is amorphous and has a low thermal conductivity, there is almost no such scattering and disturbance, and noise during recording / reproduction can be reduced as compared with the above-mentioned conventional magneto-optical disk. all right.

以上の本発明の作用効果は、光磁気記録媒体に限られ
ることはなく、相変化型,反射型等公知の光記録媒体に
おいても同様に奏し得るものであることは明らかであ
り、よって本発明は広く光記録媒体に適用できるもので
ある。このように本発明は光記録媒体の中でも特に光磁
気記録媒体の耐久性を含めた特性向上に大きな寄与をな
すものである。
It is apparent that the above-described effects of the present invention are not limited to the magneto-optical recording medium and can be similarly exerted in well-known optical recording media such as phase change type and reflection type. Is widely applicable to optical recording media. As described above, the present invention makes a great contribution to the improvement of the characteristics including the durability of the magneto-optical recording medium among the optical recording media.

以下本発明を、上述の複合誘電体の特性把握のための
実験例及び実施例に基いて説明する。
Hereinafter, the present invention will be described based on experimental examples and examples for grasping the characteristics of the above-mentioned composite dielectric.

[実験例] 本発明の基礎となるIn,Snの少なくとも一方とBiとの
複合酸化物,窒素含有酸化物をBiの含有量を変えて以下
のように作成し、評価した。
[Experimental Example] A composite oxide of at least one of In and Sn and Bi, which is the basis of the present invention, and a nitrogen-containing oxide were prepared and evaluated in the following manner while changing the content of Bi.

実施例1〜7 長さ76mm,幅26mm,厚さ1mmのスライドガラス,厚さ1mm
で1cm平方のSiウェハー及び薄板ガラス(直径18mm×厚
さ0.1mmの円盤)を3ターゲットの高周波マグネトロン
スパッタ装置(アネルハ(株)製SPF−430H型)の真空
槽内に固定し、4×10-7Torrになるまで排気する。
Examples 1 to 7 Length 76 mm, Width 26 mm, Thickness 1 mm Slide Glass, Thickness 1 mm
Then, a 1 cm square Si wafer and a thin glass plate (diameter 18 mm × thickness 0.1 mm disk) were fixed in the vacuum chamber of a 3-target high frequency magnetron sputtering device (SPF-430H manufactured by Anelha Co., Ltd.) and 4 × 10. Exhaust to -7 Torr.

次にAr/O2混合ガス(O2:Vol%)を真空槽内に導入
し、圧力10m TorrになるようにAr/O2ガス流量を調整し
た。ターゲットとしては直径100mm,厚さ5mmの円盤で、
組成がBixInySnzO100-(x+y+z)(x,y,zは原子%)におい
て,(x,y,z)が(34,6,0),(28,12,0)(20,20,0)
(12,28,0),(6,34,0),(22,14,4),(22,4,14)
の各組成の酸化物焼結体からなる7種類を適宜使用し
た。放電電力100W,放電周波数13.56MHzで高周波スパッ
タリングを行い、表1の膜組成の欄に示すところの組成
をもつ複合酸化物膜(BiInSnO膜)を約1000Å堆積し
た。
Next, an Ar / O 2 mixed gas (O 2 : Vol%) was introduced into the vacuum chamber, and the Ar / O 2 gas flow rate was adjusted so that the pressure was 10 m Torr. As a target, a disk with a diameter of 100 mm and a thickness of 5 mm,
When the composition is Bi x In y Sn z O 100- (x + y + z) (x, y, z is atomic%), (x, y, z) is (34,6,0), (28,12 , 0) (20,20,0)
(12,28,0), (6,34,0), (22,14,4), (22,4,14)
Seven kinds of oxide sintered bodies of each composition were used appropriately. High-frequency sputtering was performed at a discharge power of 100 W and a discharge frequency of 13.56 MHz to deposit about 1000 liters of a composite oxide film (BiInSnO film) having the composition shown in the film composition column of Table 1.

まず、Siウェハー上に堆積したサンプルを用いて波長
830nmの光に対する薄膜の屈折率を求めた。測定装置と
しては、(株)溝尻光学工業所製,自動エリプソメータ
ーDHA−OLWを用いた。その結果を表1の屈折率の欄に示
す。
First, using a sample deposited on a Si wafer,
The refractive index of the thin film for 830 nm light was determined. As the measuring device, an automatic ellipsometer DHA-OLW manufactured by Mizojiri Optical Co., Ltd. was used. The results are shown in the refractive index column of Table 1.

次に、薄板ガラス上に堆積したサンプルを用いて、薄
膜の内部応力を求めた。測定にはTENCOR INSTRUMENTS
製,触針式表面粗さ計alpha−step 200を用い触針によ
り2mmの長さ走査したときのそり量を測定し、内部応力
σを求めた。その結果を表1の内部応力の欄に示す。
Next, the internal stress of the thin film was determined using the sample deposited on the thin glass plate. TENCOR INSTRUMENTS for measurement
The internal stress σ was obtained by measuring the amount of warpage when a 2 mm length scan was performed with a stylus using a stylus type surface roughness meter alpha-step 200 manufactured by K.K. The results are shown in the column of internal stress in Table 1.

さらに、スライドガラス上に堆積したサンプルを用
い、結晶状態の測定を行った。測定には理学電機(株)
製強力X線回折装置HIGHPOWER UNIT MODEL D−3Fを用い
た。結果を表1の結晶状態の欄に示す。
Furthermore, the crystalline state was measured using the sample deposited on the slide glass. Rigaku Denki Co., Ltd. for measurement
A strong X-ray diffractometer manufactured by HIGH POWER UNIT MODEL D-3F was used. The results are shown in the crystalline state column of Table 1.

実施例8〜14 実施例1〜7と同様に、長さ76mm,幅26mm,厚さ1mmの
スライドガラス,厚さ1mmで1cm平方のSiウェハー及び薄
板ガラス(直径18mm×厚さ0.1mmの円盤)を3ターゲッ
トの高周波マグネトロンスパッタ装置(アネルバ(株)
製,SPF−430H型)の真空槽内に固定し、4×10-7Torrに
なるまで排気する。
Examples 8 to 14 Similar to Examples 1 to 7, a slide glass having a length of 76 mm, a width of 26 mm, and a thickness of 1 mm, a 1 mm-thick Si wafer of 1 cm square and a thin plate glass (diameter 18 mm × thickness 0.1 mm disk) ) Is a high-frequency magnetron sputtering device with three targets (Anelva Co., Ltd.)
(Made by SPF-430H) and evacuated to 4 × 10 -7 Torr.

スパッタリングガスとしてAr/N2混合ガス(N2:30Vol
%)を用いる以外は実験例1〜7と全く同じ条件で表1
の膜組成の欄に示すところの組成をもつ窒素含有複合酸
化膜(BiInSnON膜)を約1000Å堆積した。実験例1〜7
と全く同じようにして屈折率,内部応力σ,結晶状態の
測定を行った。結果を表1に示す。
Ar / N 2 mixed gas (N 2 : 30Vol
%) Under exactly the same conditions as in Experimental Examples 1 to 7
About 1000Å of nitrogen-containing composite oxide film (BiInSnON film) having the composition shown in the column of the film composition of was deposited. Experimental Examples 1 to 7
The refractive index, internal stress σ, and crystalline state were measured in exactly the same manner as in. The results are shown in Table 1.

実験例15 実験例1〜7と同じように、長さ76mm,幅26mm,厚さ1m
mのスライドガラス,厚さ1mmで1cm平方のSiウェハー及
び薄板ガラス(直径18mm×厚さ0.1mmの円盤)を実験例
1〜7に用いたスパッタ装置内に固定し、4×10-7Torr
になるまで排気する。
Experimental Example 15 As in Experimental Examples 1 to 7, length 76 mm, width 26 mm, thickness 1 m
A slide glass of m, a 1 mm-thick 1 cm square Si wafer and a thin glass plate (diameter 18 mm × thickness 0.1 mm disk) were fixed in the sputtering apparatus used in Experimental Examples 1 to 7, and 4 × 10 −7 Torr
Exhaust until

ターゲットとしてBi60In40(添数字は原子%)の合金
ターゲットを用い、またスパッタリングガスとしてはAr
/O2混合ガス(O2:10Vol%)を用いた。放電時の電圧400
V,電流0.5AでDC反応性スパッタリングを行い、組成がBi
24In16O60(添数字は原子%)の複合酸化物膜膜1000Å
を堆積した。
An alloy target of Bi 60 In 40 (subscript is atomic%) was used as the target, and Ar was used as the sputtering gas.
An / O 2 mixed gas (O 2 : 10 Vol%) was used. Discharge voltage 400
DC reactive sputtering was performed at V and current of 0.5 A, and the composition was Bi
24 In 16 O 60 (Supplemental figures are atomic%) complex oxide film 1000 Å
Was deposited.

実験例1〜7と全く同じようにして屈折率,内部応力
のσ及び結晶状態の測定を行った。結果を表1に示す。
The refractive index, σ of internal stress, and crystalline state were measured in exactly the same manner as in Experimental Examples 1 to 7. The results are shown in Table 1.

実験例16,17 比較のため、従来例のIn2O3膜及びBi2O3膜を以下のよ
うに作成し評価した。
Experimental Examples 16 and 17 For comparison, In 2 O 3 film and Bi 2 O 3 film of the conventional example were prepared and evaluated as follows.

実験例1〜7と全く同様にして長さ76mm,幅26mm,厚さ
1mmのスライドガラス,厚さ1mmで1cm平方のSiウェハー
及び薄板ガラス(直径18mm×厚さ0.1mmの円盤)を3タ
ーゲットの高周波マグネトロンスパッタ装置(アネルバ
(株)製,SPF−430H型)の真空槽内に固定し、4×10-7
Torrになるまで排気する。
Exactly the same as Experimental Examples 1 to 7, length 76 mm, width 26 mm, thickness
Vacuum of 1-mm slide glass, 1-mm-thick 1 cm-square Si wafer and thin glass (18 mm in diameter x 0.1 mm-thick disk) for high-frequency magnetron sputtering equipment with 3 targets (Anerva Corp., SPF-430H type) Fixed in the tank, 4 × 10 -7
Exhaust to Torr.

ターゲットとしてIn2O3焼結体,Bi2O3焼結体を夫々用
いる以外は実験例1〜7と全く同じ条件でIn2O3膜,Bi2O
3膜を夫々約1000Åの厚さに堆積した。実験例1〜7と
全く同じようにして屈折率,内部応力σ,結晶状態の測
定を行った。結果を表1に示す。
An In 2 O 3 film and a Bi 2 O 3 film were prepared under exactly the same conditions as in Experimental Examples 1 to 7 except that In 2 O 3 sintered body and Bi 2 O 3 sintered body were used as targets.
Each of the three films was deposited to a thickness of about 1000Å. The refractive index, internal stress σ, and crystalline state were measured in exactly the same manner as in Experimental Examples 1 to 7. The results are shown in Table 1.

本発明に係る実験例1〜7,15及び従来例の実験例16よ
り、複合酸化物膜はBiの含有量により、その屈折率が2.
0以上の高いレベルで広範囲に調整できると共に、内部
応力σはBiの含有量に係わらずIn2O3に比べ顕著に低減
することがわかった。更に複合酸化物の内部応力は従来
例の実験例17のBi2O3膜の内部応力よりも小さく、これ
はBiとIn又は/及びSnとの混合による相乗効果により得
られるものと思われる。これらの点により、この複合酸
化物を光磁気記録媒体の誘電体層として用いれば、レー
ザー光の閉じ込め効果が向上し、記録感度の向上,CNRの
向上が実現されると考えられる。また、剥離・亀裂等の
欠陥の発生を抑える効果が期待できる。
From Experimental Examples 1 to 7 and 15 according to the present invention and Experimental Example 16 of the conventional example, the composite oxide film has a refractive index of 2. due to the content of Bi.
It was found that the internal stress σ can be adjusted over a wide range at a high level of 0 or more, and that the internal stress σ is significantly reduced compared to In 2 O 3 regardless of the Bi content. Furthermore, the internal stress of the composite oxide is smaller than the internal stress of the Bi 2 O 3 film of Experimental Example 17 of the conventional example, which is considered to be obtained by the synergistic effect of mixing Bi with In or / and Sn. From these points, it is considered that when this composite oxide is used as the dielectric layer of the magneto-optical recording medium, the confinement effect of laser light is improved, and the recording sensitivity and CNR are improved. Further, the effect of suppressing the occurrence of defects such as peeling and cracks can be expected.

更に、実験例8〜14に示したように、この複合酸化物
に更に窒素を含有せしめることにより、屈折率の一層の
向上をはかることができた。
Further, as shown in Experimental Examples 8 to 14, by further containing nitrogen in this composite oxide, the refractive index could be further improved.

また、実験例16,17から明らかな如く、従来より公知
のBi2O3,In2O3の単独薄膜は結晶状態を有する薄膜であ
る。一方、実験例1〜15から明らかの如く、本発明に係
わる複合酸化物膜は、驚くべきことに非晶質状態となる
ことがわかった。従って、記録・再生時のレーザー光の
結晶粒界による散乱や、ビット形成時の熱伝導の不均一
性によるビット形状の乱れが小さいなどの媒体ノイズを
低減する効果をもつと考えられる。
Further, as is clear from Experimental Examples 16 and 17, the conventionally known single thin films of Bi 2 O 3 and In 2 O 3 are thin films having a crystalline state. On the other hand, as is clear from Experimental Examples 1 to 15, it was found that the composite oxide film according to the present invention is surprisingly in an amorphous state. Therefore, it is considered to have an effect of reducing medium noise such as scattering of laser light by crystal grain boundaries at the time of recording / reproducing, and small disorder of the bit shape due to non-uniformity of heat conduction during bit formation.

[実施例及び比較例] 前述の実験例の複合酸化物を光干渉層又は/及び保護
層とした光磁気ディスクを作成し、本発明の効果を確認
した。
[Examples and Comparative Examples] Magneto-optical disks having the composite oxide of the above-mentioned experimental example as an optical interference layer and / or a protective layer were prepared, and the effects of the present invention were confirmed.

比較例1〜7 以下のようにして、第1図に示す構成の光磁気記録媒
体を作成し、評価した。図において1は基板,2は誘電体
層,3は透明金属薄膜層,4は記録層,5は裏面保護層であ
る。
Comparative Examples 1 to 7 The magneto-optical recording medium having the structure shown in FIG. 1 was prepared and evaluated as follows. In the figure, 1 is a substrate, 2 is a dielectric layer, 3 is a transparent metal thin film layer, 4 is a recording layer, and 5 is a back surface protective layer.

直径130mm,厚さ1.2mmの円盤で、1.6μmピッチのグル
ープを有するポリカーボネート樹脂(PC)のディスク基
板1を3ターゲットの高周波マグネトロンスパッタ装置
(アネルバ(株)製SPF−430H型)の真空槽内に固定
し、4×10-7Torrになるまで排気する。なお、膜形成に
おいては基板1は15rpmで回転させた。
A disk with a diameter of 130 mm and a thickness of 1.2 mm, and a polycarbonate resin (PC) disk substrate 1 having a 1.6 μm pitch group in a vacuum chamber of a 3-target high frequency magnetron sputtering device (SPF-430H manufactured by Anerva Corp.). Then, evacuate to 4 × 10 -7 Torr. The substrate 1 was rotated at 15 rpm during film formation.

次に前述の実験例1〜7と同じようにして、Bi含有量
の異なる複合酸化物からなる透明誘電体層2を形成し
た。すなわちターゲットとしては直径100mm,厚さ5mmの
円盤で、組成がBixInySnzO100-(x+y+z)(x,y,zは原子
%)において,(x,y,z)が(34,6,0),(28,12,0)
(20,20,0)(12,28,0),(6,34,0),(22,14,4),
(22,4,14)の各組成の酸化物焼結体からなる7種類を
適宜用意し、これを前記スパッタ装置に順次取り付け以
下の条件で膜作成した。まずAr/O2混合ガス(O2:1Vol
%)を真空槽内に導入し、圧力10m TorrになるようにAr
/O2混合ガスの流量を調整した。次いで、放電電力100W,
放電周波数13.56MHzで高周波スパッタリングを行い、誘
電体層2として表2に示すところの組成,及び厚さをも
つ複合酸化物膜を堆積した。ここで、それぞれの膜厚
は、誘電体層2の屈折率Nから光学的に決定される性能
指数 (R:媒体反射率,θk:Kerr回転角)が最大となる値であ
り、同時に実際の媒体においても誘電体の膜厚を変化さ
せたときのCNRが最大となる値とした。
Next, in the same manner as in the above-mentioned Experimental Examples 1 to 7, the transparent dielectric layer 2 made of complex oxides having different Bi contents was formed. That is, the target is a disk with a diameter of 100 mm and a thickness of 5 mm, and the composition is Bi x In y Sn z O 100- (x + y + z) (x, y, z is atomic%), (x, y, z ) Is (34,6,0), (28,12,0)
(20,20,0) (12,28,0), (6,34,0), (22,14,4),
Seven kinds of (22,4,14) oxide sintered bodies having respective compositions were appropriately prepared, and these were sequentially attached to the sputtering apparatus to form a film under the following conditions. First, Ar / O 2 mixed gas (O 2 : 1Vol
%) Into the vacuum chamber and Ar to a pressure of 10 m Torr.
The flow rate of the / O 2 mixed gas was adjusted. Then, discharge power 100W,
High frequency sputtering was performed at a discharge frequency of 13.56 MHz to deposit a composite oxide film having the composition and thickness shown in Table 2 as the dielectric layer 2. Here, each film thickness is a figure of merit optically determined from the refractive index N of the dielectric layer 2. (R: medium reflectance, θk: Kerr rotation angle) is the maximum value, and at the same time, the CNR is also the maximum when the film thickness of the dielectric is changed in the actual medium.

続いて、透明金属薄膜層3としてターゲットをTi80Cr
20合金(添数字は組成(原子%)を示す)の円盤に加
え、スパッタリングガスをAr/O2より純Ar(5N)とする
以外は上述と同様の放電条件でTiCr合金膜を約15Å堆積
した。
Then, as the transparent metal thin film layer 3, the target was Ti 80 Cr.
Approximately 15 Å of TiCr alloy film was deposited under the same discharge conditions as above, except that a disc of 20 alloys (subscripts indicate composition (atomic%)) was added and the sputtering gas was pure Ar (5N) rather than Ar / O 2. did.

次に光磁気記録層4としてターゲットをTb23Fe69Co8
(添数字は組成(原子%)を示す)の円盤に変え、TiCr
合金膜と同様の放電条件でTbFeCo合金膜を約400Å堆積
とした。
Next, as the magneto-optical recording layer 4, the target was Tb 23 Fe 69 Co 8
(Additional numbers indicate composition (atomic%))
About 400 liters of TbFeCo alloy film was deposited under the same discharge conditions as the alloy film.

さらに、裏面保護層5としてターゲットをTi80Cr20
戻し、上述と同様の放電条件でTiCr合金膜を約500Å堆
積した。
Further, the target was returned to Ti 80 Cr 20 as the back surface protective layer 5, and a TiCr alloy film was deposited at about 500 Å under the same discharge conditions as described above.

以上の順序で各Bi含有量の複合酸化物を透明誘電体層
とし、その他は同じ構成の第1図に示すところのPC/[B
ixInySnzO100-(x+y+z)]/TiCr/TbFeCo/TiCrの積層構成
の光磁気ディスクを得た。
PC / [B as shown in Fig. 1 with the same structure except that the complex oxides of each Bi content were used as transparent dielectric layers in the above order.
A magneto-optical disk having a laminated structure of i x In y Sn z O 100- (x + y + z) ] / TiCr / TbFeCo / TiCr was obtained.

この光磁気ディスクのkerr回転角の測定結果(レーザ
ー波長λ:633nm)を表2のKerr回転角の欄に示す。次に
このディスクのCNRを測定した。測定には光磁気記録再
生装置(ナカミチOMS−1000 Type III)を用い、ディス
クを1800rpmで回転させ半径30mmRの位置で記録・再生・
消去を行った。信号の再生は0.8mWのレーザーパワーで
行った。記録時の最適レーザーパワーは、信号再生時の
1次高調波と2次高調波の差が最大となる値に決定し
た。信号の周波数は1MHzとした。各媒体の最適レーザー
パワーを表2の記録パワーの欄に示す。尚、記録・消去
の際の印加磁界は500Oe(エルステッド)である。媒体
のCNR及びノイズレベルの評価結果を表2のCNR,ノイズ
レベルの欄に示す。ノイズレベルは1mWを基準とした絶
対レベルを示すdbmの単位で表示した。
The measurement results of the kerr rotation angle (laser wavelength λ: 633 nm) of this magneto-optical disk are shown in the column of Kerr rotation angle in Table 2. Next, the CNR of this disc was measured. A magneto-optical recording / reproducing device (Nakamichi OMS-1000 Type III) was used for the measurement, and the disc was rotated at 1800 rpm to record / reproduce at a radius of 30 mmR.
It was erased. Signal reproduction was performed with a laser power of 0.8 mW. The optimum laser power at the time of recording was determined to be a value that maximizes the difference between the first harmonic and the second harmonic at the time of signal reproduction. The frequency of the signal was 1 MHz. The optimum laser power of each medium is shown in the recording power column of Table 2. The applied magnetic field during recording / erasing is 500 Oe (oersted). The CNR and noise level evaluation results of the medium are shown in the column of CNR and noise level in Table 2. The noise level is shown in units of dbm, which is an absolute level based on 1 mW.

これらのディスクの面を観察したところ、ピンホール
や剥離,亀裂等の欠陥は観察されなかった。
When the surfaces of these disks were observed, no defects such as pinholes, peeling and cracks were observed.

次にこれらのディスクを80℃,85%RHの高温高湿雰囲
気下に1000時間放置した。その後Kerr回転角及び記録時
最適レーザーパワー,CNRノイズレベルを測定したとこ
ろ、放置前の測定結果と比較して全く変化は見られなか
った。また、媒体面のピンホールや剥離・亀裂等の欠陥
の発生は全く見られなかった。
Next, these disks were left for 1000 hours in a high temperature and high humidity atmosphere of 80 ° C. and 85% RH. After that, when the Kerr rotation angle, the optimum laser power during recording, and the CNR noise level were measured, no change was observed compared with the measurement results before standing. In addition, the occurrence of defects such as pinholes, peeling and cracks on the medium surface was not observed at all.

実施例1〜7 以下のようにして前述の実験例8〜14と同じ窒素含有
複合酸化物を透明誘電体層2とした第1図に示す構成の
光磁気ディスクを作成し、評価した。
Examples 1 to 7 Magneto-optical disks having the structure shown in FIG. 1 in which the same nitrogen-containing composite oxide as in the above-described Experimental Examples 8 to 14 was used as the transparent dielectric layer 2 were prepared and evaluated as follows.

直径130mm,厚さ1.2mmの円盤で、1.6μmピッチのグル
ーブを有するポリカーボネート樹脂(PC)のディスク基
板1を、比較例1〜7で用いたものと全く同じスパッタ
装置中に、全く同じ条件で固定した。
A disk substrate 1 of a polycarbonate resin (PC) having a diameter of 130 mm and a thickness of 1.2 mm and having a groove with a pitch of 1.6 μm was placed in the same sputtering apparatus as that used in Comparative Examples 1 to 7 under exactly the same conditions. Fixed

誘電体層2を形成する際のスパッタリングガスとして
Ar/O2に変えてAr/N2混合ガス(N2:30Vol%)を用いる以
外は、比較例1〜7と全く同じ条件でスパッタリングを
行い、各層を形成し、誘電体層2が表2に示すところの
膜組成,及び膜厚をもつ窒素含有複合酸化物からなり、
その他は実施例1〜7と同じの第1図に示すところのPC
/[BixInySnz(O100-aNa100-(x+y+z)]/TiCr/TbFeCo/
TiCrの積層構成の光磁気ディスクを得た。
As a sputtering gas when forming the dielectric layer 2
Sputtering was performed under exactly the same conditions as in Comparative Examples 1 to 7 except that Ar / N 2 mixed gas (N 2 : 30 Vol%) was used instead of Ar / O 2 , and each layer was formed to form the dielectric layer 2 exposed. Consisting of a nitrogen-containing complex oxide having the film composition and film thickness shown in 2,
Others are the same as those in Examples 1 to 7 and shown in FIG.
/ [Bi x In y Sn z (O 100-a N a ) 100- (x + y + z) ] / TiCr / TbFeCo /
A magneto-optical disk having a laminated structure of TiCr was obtained.

なお、誘電体層2の膜厚は比較例1〜7と同様にして
設定した。
The film thickness of the dielectric layer 2 was set in the same manner as in Comparative Examples 1 to 7.

比較例1〜7と同様に、Kerr回転角,記録パワー,CN
R,ノイズレベルの測定を行った。結果を表2の実施例1
〜7に示す。
Similar to Comparative Examples 1 to 7, Kerr rotation angle, recording power, CN
The R and noise levels were measured. The results are shown in Example 1 of Table 2.
~ 7.

これらのディスクの面を観察したところ、ピンホール
や剥離・亀裂等の欠陥は観察されなかった。
When the surfaces of these disks were observed, no defects such as pinholes, peeling and cracks were observed.

次にこれらのディスクを80℃,85%RHの高温高湿雰囲
気下に1000時間放置した。その後のKerr回転角及び記録
時最適レーザーパワー,CNR,ノイズレベルを測定したと
ころ、比較例1〜7と同様放置前の測定結果と比較して
全く変化は見られなかった。また、媒体面のピンホール
や剥離・亀裂等の欠陥の発生は全く見られなかった。
Next, these disks were left for 1000 hours in a high temperature and high humidity atmosphere of 80 ° C. and 85% RH. After that, the Kerr rotation angle, the optimum laser power during recording, the CNR, and the noise level were measured, and as with Comparative Examples 1 to 7, no change was observed as compared with the measurement results before standing. In addition, the occurrence of defects such as pinholes, peeling and cracks on the medium surface was not observed at all.

比較例8 以下のようにして前述の実験例15と同じ複合酸化物を
透明誘電体層2とした第1図に示す構成の光磁気ディス
クを作成し評価した。
Comparative Example 8 A magneto-optical disk having the structure shown in FIG. 1 in which the same complex oxide as in Experimental Example 15 was used as the transparent dielectric layer 2 was prepared and evaluated as follows.

直径130mm,厚さ1.2mmの円盤で、1.6μmピッチのグル
ーブを有するポリカーボネート樹脂(PC)のディスク基
板を、比較例1〜7で用いたものと全く同じスパッタ装
置中に全く同じ条件で固定した。
A disk substrate of a polycarbonate resin (PC) having a diameter of 130 mm and a thickness of 1.2 mm and having a groove of 1.6 μm pitch was fixed in the same sputtering apparatus as that used in Comparative Examples 1 to 7 under exactly the same conditions. .

誘電体層2の複合酸化物膜は、前述の実験例15と同じ
ようにして形成した。すなわち、ターゲットとしてBi60
In40(添数字は原子%)の合金ターゲットを用い、また
その際のスパッタリングガスとしてはAr/O2混合ガス(O
2:10Vol%)を用いた。放電時の電圧400V,電流0.5Aで、
DC反応性スパッタリングを行い、誘電体層2として実験
例15と同じ組成がBi24In16O60(添数字は原子%)の複
合酸化物膜約720Åを形成した。なお、この膜厚は比較
例1〜7と同様にして設定した。以下、比較例1〜7と
全く同じ条件でスパッタリングを行い、誘電体層2が上
記複合酸化物で、それ以外の構成は比較例1〜7と全く
同じの、第1図に示すところのPC/Bi24In16O60/TiCr/Tb
FeCo/TiCrの積層構成の光磁気ディスクを得た。
The composite oxide film of the dielectric layer 2 was formed in the same manner as in Experimental Example 15 described above. That is, Bi 60 as a target
An alloy target of In 40 (subscript number is atomic%) was used, and the sputtering gas at that time was an Ar / O 2 mixed gas (O
2: 10Vol%) was used. At discharge voltage 400V, current 0.5A,
DC reactive sputtering was performed to form, as the dielectric layer 2, about 720 Å of a composite oxide film having the same composition as in Experimental Example 15, Bi 24 In 16 O 60 (subscripts are atomic%). The film thickness was set similarly to Comparative Examples 1-7. Hereinafter, sputtering was performed under exactly the same conditions as in Comparative Examples 1 to 7, the dielectric layer 2 was the above composite oxide, and the other configurations were exactly the same as those in Comparative Examples 1 to 7, PC shown in FIG. / Bi 24 In 16 O 60 / TiCr / Tb
A magneto-optical disk having a laminated structure of FeCo / TiCr was obtained.

比較例1〜7と同様にKerr回転角,記録パワー,CNR,
ノイズレベルの測定を行った。結果を表2の比較例8に
示す。
Similar to Comparative Examples 1 to 7, Kerr rotation angle, recording power, CNR,
The noise level was measured. The results are shown in Comparative Example 8 in Table 2.

このディスクの面を観察したところピンホールや剥離
・亀裂等の欠陥は観察されなかった。
When the surface of this disk was observed, no defects such as pinholes, peeling and cracks were observed.

次にこのディスクを80℃、85%RHの高温高湿雰囲気下
に1000時間放置した。その後のKerr回転角,及び記録時
最適レーザーパワー,CNR,ノイズレベルを測定したとこ
ろ、比較例1〜7と同様放置前の測定結果と比較して全
く変化は見られなかった。また、媒体面のピンホールや
剥離・亀裂等の欠陥の発生は全く見られなかった。
Next, this disk was left for 1000 hours in a high temperature and high humidity atmosphere of 80 ° C. and 85% RH. After that, the Kerr rotation angle, the optimum laser power during recording, the CNR, and the noise level were measured, and as with Comparative Examples 1 to 7, no change was observed compared with the measurement results before standing. In addition, the occurrence of defects such as pinholes, peeling and cracks on the medium surface was not observed at all.

比較例9〜10 以下のようにして比較のため、従来例のIn2O3を透明
誘電体層2とした第1図に示す構成の光磁気ディスクを
作成し評価した。
Comparative Examples 9 to 10 For comparison, a magneto-optical disk having the structure shown in FIG. 1 in which In 2 O 3 of the conventional example was used as the transparent dielectric layer 2 was prepared and evaluated for comparison.

直径130mm,厚さ1.2mmの円盤で、1.6μmピッチのグル
ーブを有するポリカーボネート樹脂(PC)のディスク基
板を、比較例1〜7で用いたものと全く同じスパッタ装
置中に全く同じ条件で固定した。
A disk substrate of a polycarbonate resin (PC) having a diameter of 130 mm and a thickness of 1.2 mm and having a groove of 1.6 μm pitch was fixed in the same sputtering apparatus as that used in Comparative Examples 1 to 7 under exactly the same conditions. .

誘電体層2のIn2O3膜は、前述の実験例16と全く同様
にしてターゲットとしてIn2O3焼結体を用いて800Å厚さ
に形成し、それ以外の各層は比較例1〜7と全く同じ条
件でスパッタリングを行い、誘電体層がIn2O3で、その
他の構成は比較例1〜7と同じの、第1図に示すところ
のPC/In2O3/TiCr/TbFeCo/TiCrの積層構成の光磁気ディ
スクを得た。なお、In2O3膜の膜厚は比較例1〜7と同
様にして設定した。
The In 2 O 3 film of the dielectric layer 2 was formed to a thickness of 800 Å using the In 2 O 3 sintered body as a target in exactly the same manner as in the above-described Experimental Example 16, and the other layers were formed in Comparative Examples 1 to 1. Sputtering was carried out under exactly the same conditions as in No. 7, the dielectric layer was In 2 O 3 , and the other constitutions were the same as in Comparative Examples 1 to 7, PC / In 2 O 3 / TiCr / TbFeCo shown in FIG. A magneto-optical disk having a laminated structure of / TiCr was obtained. The film thickness of the In 2 O 3 film was set in the same manner as in Comparative Examples 1 to 7.

比較例1〜7と同様に、Kerr回転角,記録パワー,CN
R,ノイズレベルの測定を行った。結果を表2の比較例9
の欄に示す。
Similar to Comparative Examples 1 to 7, Kerr rotation angle, recording power, CN
The R and noise levels were measured. The results are shown in Comparative Example 9 in Table 2.
Column.

この媒体面を観察したところピンホールや剥離・亀裂
等の欠陥は観察されなかった。
Observation of this medium surface revealed no defects such as pinholes, peeling and cracks.

次にこの媒体を80℃,85%RH高温高湿雰囲気下に1000
時間放置した。その後のKerr回転角及び記録時最適レー
ザーパワー,CNR,ノイズレベルを測定した。結果を表2
の比較例10の欄に示す。放置前に比べKerr回転角,記録
感度,CNR,ノイズレベルともに劣化していることがわか
る。また、媒体面にはピンホールの発生が見られた。
Next, this medium is heated to 80 ° C, 85% RH in a high temperature and high humidity atmosphere at 1000
Left for hours. After that, the Kerr rotation angle and the optimum laser power during recording, CNR, and noise level were measured. Table 2 shows the results
The column of Comparative Example 10 is shown. It can be seen that the Kerr rotation angle, recording sensitivity, CNR, and noise level have all deteriorated compared to before leaving. In addition, pinholes were found on the medium surface.

実施例8 以下のようにして、ファラデー効果も利用する金属反
射層を備えた第2図に示す構成の光磁気記録媒体を作成
し評価した。第2図において、1,2,3,4は第1図と同じ
で、5a,5bは裏面保護層,6は金属反射層である。
Example 8 A magneto-optical recording medium having a structure shown in FIG. 2 provided with a metal reflective layer that also utilizes the Faraday effect was prepared and evaluated as follows. In FIG. 2, 1, 2, 3, and 4 are the same as in FIG. 1, 5a and 5b are backside protective layers, and 6 is a metal reflective layer.

直径130mm,厚さ1.2mmの円盤で、1.6μmピッチのグル
ーブを有するポリカーボネート樹脂(PC)のディスク基
板を、比較例1〜7で用いたものと全く同じスパッタ装
置中に全く同じ条件で固定した。
A disk substrate of a polycarbonate resin (PC) having a diameter of 130 mm and a thickness of 1.2 mm and having a groove of 1.6 μm pitch was fixed in the same sputtering apparatus as that used in Comparative Examples 1 to 7 under exactly the same conditions. .

先ず誘電体層2として窒素含有複合酸化物膜を以下の
ようにして形成した。Ar/N2混合ガス(N2:30Vol%)を
真空槽内に導入し、圧力10m TorrになるようにAr/N2
合ガスの流量を調整した。ターゲットとしては直径100m
m,厚さ5mmの円盤で組成がBi20In18Sn2O60(添数字は原
子%)の焼結体ターゲットを用いた。放電電力100W,放
電周波数13.56MHzで高周波スパッタリングを行い、誘電
体層2として、Bi20In18Sn2O50N10なる組成成の窒素含
有酸化物膜を約500Å堆積した。この膜厚は比較例1〜
7と同様にして設定した。
First, a nitrogen-containing composite oxide film was formed as the dielectric layer 2 as follows. Ar / N 2 mixed gas (N 2 : 30Vol%) was introduced into the vacuum chamber, and the flow rate of the Ar / N 2 mixed gas was adjusted so that the pressure was 10 m Torr. 100m diameter as target
A sintered body target having a disc size of 5 mm and a thickness of 5 mm and a composition of Bi 20 In 18 Sn 2 O 60 (subscripts are atomic%) was used. High-frequency sputtering was performed at a discharge power of 100 W and a discharge frequency of 13.56 MHz to deposit about 500 liters of a nitrogen-containing oxide film having a composition of Bi 20 In 18 Sn 2 O 50 N 10 as the dielectric layer 2. This film thickness is from Comparative Example 1
It was set in the same manner as 7.

次に、スパッタリングガスをAr/N2から純Ar(5N)に
変え、ターゲットとしてTi60Cr30Re10,及びNd5Dy15Tb8F
e60Co12(添数字は原子%)の組成をもつ2種の合金タ
ーゲットを用い、上述と同様の放電条件で、ターゲット
を交換してスパッタリングを行い、第2図に示すところ
の金属薄膜層3,光磁気記録層4,裏面金属保護層5aとし
て、TiCrRe,NdDyTbFeCo,TiCrReの順にそれぞれ15Å,200
Å,15Åの膜厚で堆積させた。
Next, the sputtering gas was changed from Ar / N 2 to pure Ar (5N), and Ti 60 Cr 30 Re 10 and Nd 5 Dy 15 Tb 8 F were used as targets.
Using two kinds of alloy targets with a composition of e 60 Co 12 (subscripts are atomic%), under the same discharge conditions as above, the targets were exchanged for sputtering, and the metal thin film layer shown in FIG. 3, magneto-optical recording layer 4, as the backside metal protective layer 5a, TiCrRe, NdDyTbFeCo, TiCrRe in the order of 15Å, 200
It was deposited with a film thickness of Å, 15Å.

再びターゲットを誘電体層2の複合酸化物膜を形成し
たBi20In18Sn2O60の焼結体ターゲットに戻し、誘電体層
2と全く同じ放電条件で、BiInSnONからなる裏面誘電体
保護層5bを約200Å堆積した。
The target was returned to the sintered body target of Bi 20 In 18 Sn 2 O 60 on which the complex oxide film of the dielectric layer 2 was formed, and the back surface dielectric protective layer made of BiInSnON under the same discharge conditions as the dielectric layer 2. About 200Å of 5b was deposited.

最後に、ターゲットを金属薄膜層3及び裏面金属薄膜
層5aの形成に用いたTi60Cr30Re10合金ターゲットに戻
し、金属薄膜層3と全く同じ放電条件で、金属反射層6
としてTiCrRe膜を約500Å堆積した。
Finally, the target was returned to the Ti 60 Cr 30 Re 10 alloy target used for forming the metal thin film layer 3 and the back surface metal thin film layer 5a, and the metal reflection layer 6 was formed under the same discharge conditions as the metal thin film layer 3.
As a TiCrRe film, about 500 Å was deposited.

この媒体の830nmのレーザー光に対する反射率を調べ
たところ、13%であった。また、ノイズレベルを測定し
たところ、−59dBmという低ノイズレベルであることが
確認された。
When the reflectance of this medium with respect to a laser beam of 830 nm was examined, it was 13%. Also, when the noise level was measured, it was confirmed to be a low noise level of −59 dBm.

本実施例1〜8,及び比較例1〜10より、本発明に係わ
るIn,Snの少なくとも一方とBiの複合酸化物薄膜を誘電
体層として用いることにより、その特性から期待される
通りKerr回転角,記録感度,CNRの向上,ならびにノイズ
レベルの低減された光磁気記録媒体を実現できることが
わかった。これは、実験例1〜15で示したごとく、上記
複合酸化物により誘電体層の屈折率が増大し、これによ
って光干渉効果、具体的にはレーザー光の閉じ込め効果
が向上し、kerr回転角,記録感度,CNRの向上を実現でき
ることが確認された。また、本実施例1〜7及び比較例
1〜8の透明誘電体層の複合酸化物薄膜は実験例1〜15
に示すごとく非晶質状態である。このため結晶状態のIn
2O3やBi2O3単独の膜に比べ、記録・再生時におけるレー
ザー光の結晶粒界による散乱やビット形成時の熱伝導の
不均一性によるビット形状の乱れが少なく、ノイズレベ
ルの低減が期待されるが、実施例1〜8と比較例1〜10
により期待通りノイズレベルが大きく、具体的には2dBm
以上低減できることが確認された。
From Examples 1 to 8 and Comparative Examples 1 to 10, by using at least one of In and Sn according to the present invention and a complex oxide thin film of Bi as a dielectric layer, the Kerr rotation as expected from the characteristics is obtained. It was found that it is possible to realize a magneto-optical recording medium with improved corners, recording sensitivity, CNR, and reduced noise level. This is because, as shown in Experimental Examples 1 to 15, the composite oxide increases the refractive index of the dielectric layer, which improves the optical interference effect, specifically the laser light confinement effect, and the kerr rotation angle. It was confirmed that the recording sensitivity and CNR could be improved. In addition, the composite oxide thin films of the transparent dielectric layers of Examples 1 to 7 and Comparative Examples 1 to 8 are Experimental Examples 1 to 15
It is in an amorphous state as shown in. Therefore, In
Compared to a film of 2 O 3 or Bi 2 O 3 alone, there is less scattering of the laser light due to crystal grain boundaries during recording / reproduction and less disorder of the bit shape due to non-uniform heat conduction during bit formation, reducing the noise level. Are expected, but Examples 1-8 and Comparative Examples 1-10
As expected, the noise level is high, specifically 2 dBm
It has been confirmed that the above can be reduced.

その上で、実施例1〜7に示したように、さらに窒素
を含有せしめた複合酸化物にすることにより、上述の効
果はより向上することがわかった。
Further, as shown in Examples 1 to 7, it was found that the above-mentioned effects were further improved by using a composite oxide further containing nitrogen.

また、実施例1〜7及び比較例1〜8の複合酸化物膜
は、実験例1〜15に示したごとく、比較例のIn2O3
(実施例16)に比べ、内部応力が顕著に低下している。
このため、高温高湿下での加速劣化試験を行っても、膜
の内部応力による剥離・亀裂が全く発生せず、耐久性向
上に大きな効果を奏することがわかった。
Moreover, as shown in Experimental Examples 1 to 15, the complex oxide films of Examples 1 to 7 and Comparative Examples 1 to 8 had a remarkable internal stress as compared with the In 2 O 3 film of the comparative example (Example 16). Has fallen to.
Therefore, it was found that even when an accelerated deterioration test under high temperature and high humidity was performed, peeling and cracking due to internal stress of the film did not occur at all, and the durability was greatly improved.

以上、本発明の有意性が示された。 As described above, the significance of the present invention has been shown.

【図面の簡単な説明】[Brief description of drawings]

第1図は、実施例1〜7及び比較例1〜10、第2図は実
施例8の構成を示す断面図である。 1:基板,2:誘電体層,3:金属薄膜層,4:記録層,5,5a,5b:裏
面保護層,6:金属反射層
FIG. 1 is a sectional view showing the structure of Examples 1 to 7 and Comparative Examples 1 to 10, and FIG. 2 is a structure of Example 8. 1: Substrate, 2: Dielectric layer, 3: Metal thin film layer, 4: Recording layer, 5, 5a, 5b: Backside protective layer, 6: Metal reflective layer

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】保護層又は/及び光干渉層として透明誘電
体層を有する光記録媒体において、光記録媒体は透明高
分子基板上に、前記透明誘電体層、Ti膜又はTiとRe、C
r、Taの少なくとも一つとの合金膜からなる透明金属薄
膜層、希土類金属と遷移金属の非晶質合金膜からなる光
磁気記録層をこの順序で具備したものであって、前記透
明誘電体層がIn又はSnの少なくとも一方とBi及び窒素を
含む非晶質の複合酸化物であることを特徴とする光記録
媒体。
1. An optical recording medium having a transparent dielectric layer as a protective layer and / or a light interference layer, the optical recording medium comprising a transparent polymer layer, a Ti film or Ti and Re, C on a transparent polymer substrate.
A transparent metal thin film layer formed of an alloy film of at least one of r and Ta, and a magneto-optical recording layer formed of an amorphous alloy film of a rare earth metal and a transition metal in this order, wherein the transparent dielectric layer Is an amorphous composite oxide containing at least one of In and Sn, Bi and nitrogen, and an optical recording medium.
【請求項2】前記窒素含有酸化物の窒素含有量が40at%
以下である請求項第1項記載の光記録媒体。
2. The nitrogen content of the nitrogen-containing oxide is 40 at%
The optical recording medium according to claim 1, wherein:
JP63328851A 1988-12-14 1988-12-28 Optical recording medium Expired - Lifetime JP2528173B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP63328851A JP2528173B2 (en) 1988-12-28 1988-12-28 Optical recording medium
CA002004936A CA2004936C (en) 1988-12-14 1989-12-08 Optical recording medium
DE68921308T DE68921308T2 (en) 1988-12-14 1989-12-09 Optical recording medium.
EP89122732A EP0373539B1 (en) 1988-12-14 1989-12-09 Optical recording medium
KR1019890018547A KR900010687A (en) 1988-12-14 1989-12-14 Optical recording media
US07/715,024 US5192626A (en) 1988-12-14 1991-06-13 Optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63328851A JP2528173B2 (en) 1988-12-28 1988-12-28 Optical recording medium

Publications (2)

Publication Number Publication Date
JPH02177035A JPH02177035A (en) 1990-07-10
JP2528173B2 true JP2528173B2 (en) 1996-08-28

Family

ID=18214799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63328851A Expired - Lifetime JP2528173B2 (en) 1988-12-14 1988-12-28 Optical recording medium

Country Status (1)

Country Link
JP (1) JP2528173B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450258A (en) * 1987-08-21 1989-02-27 Sumitomo Metal Mining Co Production of thin film of high-refractive index dielectric material

Also Published As

Publication number Publication date
JPH02177035A (en) 1990-07-10

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