KR930003185B1 - Optical recording material - Google Patents
Optical recording material Download PDFInfo
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- KR930003185B1 KR930003185B1 KR1019900022599A KR900022599A KR930003185B1 KR 930003185 B1 KR930003185 B1 KR 930003185B1 KR 1019900022599 A KR1019900022599 A KR 1019900022599A KR 900022599 A KR900022599 A KR 900022599A KR 930003185 B1 KR930003185 B1 KR 930003185B1
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- film
- dielectric film
- recording
- sicn
- dielectric
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
Abstract
Description
제 1 도는 종래의 광자기 디스크 구조도.1 is a conventional magneto-optical disk structure diagram.
제 2 도는 본 발명의 광자기 디스크 구조도.2 is a magneto-optical disk structure diagram of the present invention.
제 3 도는 시효(Aging)에 따른 CNR의 변화도.3 is a diagram showing the change in CNR according to aging.
제 4 도는 시효(Aging)에 따른 BER의 변화도.4 is a change in BER according to aging (Aging).
제 5 도는 기록 Power에 따른 CNR의 변화도.5 is a change of CNR according to recording power.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 제 1 유전체막 2 : 기록막1: first dielectric film 2: recording film
3 : 제 2 유전체막 4 : 반사막3: second dielectric film 4: reflective film
5 : 기판 6 : 제 1 유전체막5 substrate 6 first dielectric film
7 : 제 2 유전체막7: second dielectric film
본 발명은 광자기 기록매체의 보호막에 관한 것으로, 특히 산 소 또는 수분에 의한 기록막의 산화를 방지하여 일정한 자기 및 광학적 특성을 유지함으로서 기록매체의 보존수명을 향상시키는 광자기 기록매체에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protective film of a magneto-optical recording medium, and more particularly to an magneto-optical recording medium which improves the shelf life of a recording medium by preventing oxidation of the recording film by oxygen or moisture to maintain constant magnetic and optical properties.
고밀도 정보기록 매체로 사용되는 종래의 광자기 디스크 구조는 제 1 도와 같다. 제 1 도에서는 특과성이 우수한 PC(Polycarbonate) 기판(5)위에 산화물계(SiO2,SiO,ErO) 또는 질화물계(SiNx,AlN,TiN)등을 된 제 1 유전체막(6)을 형성하고, 유전체막(6)위에 RE-TM계(회토류-천이금속)인 Tb-Fe-Co, Gd-Fe-Co, Gd-Tb-Fe-Co등으로 된 기록막(2)을 형성한다.The conventional magneto-optical disk structure used as a high density information recording medium is the same as that of the first degree. In FIG. 1, a first dielectric film 6 made of oxide (SiO 2 , SiO, ErO) or nitride (SiN x, AlN, TiN) or the like is formed on a PC (Polycarbonate) substrate 5 having excellent specificity. On the dielectric film 6, a recording film 2 of Tb-Fe-Co, Gd-Fe-Co, Gd-Tb-Fe-Co, or the like, which is RE-TM (rare earth-transition metal), is formed. .
그리고 기록막(2)위에 상기 제 1 유전체막(6)과 동일한 재질로 된 제 2 유전체막(7)을 형성하고 그위에 Al로 된 반사막(4)을 형성한 구조로 되어있다.The second dielectric film 7 made of the same material as the first dielectric film 6 is formed on the recording film 2, and the reflective film 4 made of Al is formed thereon.
이와같은 구조에서 광자기 기록은 접속된 레이저빔이 제 1 유전체막(6)을 투과하여 기록막(2)의 표면에서 일부는 반사하여 Kerr효과를 발생시키고 나머지 빔은 기록막(2)과 제 2 유전체막(7)을 투과하면서 paraday 효과를 일으킨후 반사막(4)에서 반사되므로서 판독 및 기록을 하게 된다.In such a structure, the magneto-optical recording causes the connected laser beam to penetrate the first dielectric film 6, reflects a part of the surface of the recording film 2 to generate a Kerr effect, and the remaining beams are generated from the recording film 2 and the first film. 2 A paraday effect is generated while passing through the dielectric film 7 and then reflected by the reflective film 4 to read and write.
그러나 유전체막(6)(7)을 이루고 있는 종래의 SiNx의 세라믹계 보호막들은 제작조건에 따라 Void(동공)나 crack등이 유전체막 내부에 존재하게 되는데 산소 또는 수분등은 이들 Void나 crack등을 확산경로(diffusion path)로 삼아 기록막에 침투하여 희토류 금속을 산화함으로서 기록된 정보들을 소멸 또는 BER(Byte Error Rate)가 커지는 등, 기록막의 특성을 변화시키므로써 광자기 디스크의 신뢰성을 저하시키는 문제점이 있어 왔다.However, in the conventional SiNx ceramic protective films constituting the dielectric films 6 and 7, voids or cracks are present in the dielectric film depending on fabrication conditions. The problem of deteriorating the reliability of the magneto-optical disk by changing the characteristics of the recording film, such as disappearing the recorded information or increasing the BER (Byte Error Rate) by penetrating the recording film as a diffusion path and oxidizing the rare earth metal. This has been.
본 발명은 유전체막(6)(7)을 이루고 있는 SiNx조성물에 Carbon과 hydrogen(이하 "H"라 함)을 첨가한 SiCN : H 박막을 유전체막으로 함으로서 종전에서의 문제점을 해결함과 동시에 높은 투과율과 높은 굴절지수 값을 얻을 수 있고 열전도가 낮아 기록감도를 향상시킬 수 있는 광자기 기록매체를 제공하는데 목적이 있다.The present invention solves the problem of the past by using a SiCN: H thin film containing carbon and hydrogen (hereinafter referred to as "H") as a dielectric film to the SiNx composition forming the dielectric films 6 and 7 as a dielectric film. It is an object of the present invention to provide a magneto-optical recording medium capable of obtaining a transmittance and a high refractive index value and having low thermal conductivity to improve recording sensitivity.
이하 본 발명에 대하여 설명한다.Hereinafter, the present invention will be described.
본 발명은 제 2 도에 나타난 바와같이, PC기판(5)위에 제 1 유전체막(1), 기록막(2), 제 2 유전체막(3), 반사막(4)을 순차적으로 형성한 것에 있어서, 기록막(2) 양쪽의 제 1 유전체막(1)과 제 2 유전체막(3)을 SiCN : H의 조성물로 함을 특징으로 한다.As shown in FIG. 2, the first dielectric film 1, the recording film 2, the second dielectric film 3, and the reflective film 4 are sequentially formed on the PC substrate 5. As shown in FIG. The first dielectric film 1 and the second dielectric film 3 on both sides of the recording film 2 are characterized by the composition of SiCN: H.
상기한 SiCN : H로 된 유전체막(1)(3)중에서 Si, C, N의 조성이 바람직하게는 (Si55-XC10Nx) : H중에서 X가 35~45원자%범위인 막을 사용함이 좋다.In the above SiCN: H dielectric film (1) (3), the composition of Si, C, N is preferably (Si 55-X C 10 Nx): A film having X in the range of 35 to 45 atomic% in H is used. This is good.
이와같이 구성된 본 발명의 제조공정은 다음과 같다.The manufacturing process of this invention comprised in this way is as follows.
투과성이 우수한 PC기판(5)위에 스퍼터링 방법을 이용하여 SiCN : H의 조성물로 된 제 1 유전체막(1)을 약 900Å정도 피복하고 그위에 Tb-Fe-Co로 된 기록막(2)을 약 300Å 정도로 피복하여 Kerr효과를 얻도록 하며 다시 그위에 상기와 같은 SiCN : H의 제 2 유전체막(3)을 약 350Å정도 피복하고 그위에 Al을 약 600Å정도 피복하여 paraday효과를 얻을 수 있도록 한다.The sputtering method was applied on the PC substrate 5 having excellent permeability to cover about 900 조성물 of the first dielectric film 1 of the composition of SiCN: H, and on the recording film 2 made of Tb-Fe-Co thereon. The 300 Å coating is performed to obtain the Kerr effect. The second dielectric film 3 of SiCN: H is coated on the surface of about 350 Å and Al is coated on the surface of about 600 Å to obtain the paraday effect.
이때 본 발명의 핵심인 SiCN : H막은 Si target과 Ar, NH3, CH4가스를 혼합하여 Reactive Sputtering으로 제작한다.At this time, the SiCN: H film, which is the core of the present invention, is manufactured by reacting a Si target with Ar, NH 3 , and CH 4 gas by reactive sputtering.
다음은 이렇게 제조된 본 발명의 작용효과를 설명한다.The following describes the effects of the present invention prepared.
기판(5)을 통과한 레이저빔은 SiCN : H로 된 제 1 유전체막(1)을 통과하여 기록막(2)에 도달된다. 기록막(2)의 표면에 도달한 빔중의 일부는 표면에서 반사되어 Kerr효과를 일으키고 나머지 부분은 통과하여 paraday효과를 일으킨 후 제 2 유전체막(3)막을 통과하여 Al반사막(4)에 도달하게 되어 반사된다.The laser beam passing through the substrate 5 passes through the first dielectric film 1 of SiCN: H and reaches the recording film 2. Some of the beams reaching the surface of the recording film 2 are reflected at the surface to cause the Kerr effect, and the rest of the beam passes through the paraday effect to pass through the second dielectric film 3 to reach the Al reflective film 4. And reflected.
이와같은 작동에서 SiCN : H로 된 유전체막(1)(3)은 굴절지수가 높고(n : 2.0~2.3) 투과도가 90%이상이며, 기존의 세라믹계 유전체막 보다 열전도가 낮아 기록감도를 향상시킬 수 있을 뿐 아니라 carbon과 hydorgen는 무기물(inorganic) 성질을 갖는 film을 유기물(organic) 성질을 갖는 film으로 변화시킴으로써 PC기판과의 열팽창 계수 차이로 인한 crack발생등을 억제시키는 효과를 얻을 수 있다.In this operation, the SiCN: H dielectric films (1) and (3) have a high refractive index (n: 2.0 to 2.3), transmittance of 90% or more, and have lower thermal conductivity than conventional ceramic dielectric films, thereby improving recording sensitivity. In addition to carbon and hydorgen, carbon and hydorgen can reduce the occurrence of cracks due to the difference in thermal expansion coefficient with PC substrate by changing the film with the organic property into the film with the organic property.
제 3 도 및 제 4 도는 SiCN : H의 유전체막을 사용한 광자기 디스크의 시효에 따른 CNR(carrier-to-noise-retio)(반송파대 잡음비) 및 BER변화를 나타낸 것으로서 시효에 따라 큰 변화 없음을 알 수 있다.3 and 4 show the carrier-to-noise-retio (CNR) and BER change according to the aging of a magneto-optical disk using a SiCN: H dielectric film. Can be.
또한 제 5 도는 기존의 유전체막과 본 발명의 유전체막에 의한 기록 Power에 따른 CNR변화를 나타낸 것으로써 본 발명이 약간 우수함을 알 수 있다.5 shows the CNR change according to the recording power of the existing dielectric film and the dielectric film of the present invention, which shows that the present invention is slightly superior.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900022599A KR930003185B1 (en) | 1990-12-31 | 1990-12-31 | Optical recording material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900022599A KR930003185B1 (en) | 1990-12-31 | 1990-12-31 | Optical recording material |
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| Publication Number | Publication Date |
|---|---|
| KR920013310A KR920013310A (en) | 1992-07-28 |
| KR930003185B1 true KR930003185B1 (en) | 1993-04-23 |
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| KR1019900022599A KR930003185B1 (en) | 1990-12-31 | 1990-12-31 | Optical recording material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102797130A (en) * | 2011-05-26 | 2012-11-28 | 株式会社东芝 | Washing machine |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102797130A (en) * | 2011-05-26 | 2012-11-28 | 株式会社东芝 | Washing machine |
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| KR920013310A (en) | 1992-07-28 |
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