JPH0332144B2 - - Google Patents
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- Publication number
- JPH0332144B2 JPH0332144B2 JP25614985A JP25614985A JPH0332144B2 JP H0332144 B2 JPH0332144 B2 JP H0332144B2 JP 25614985 A JP25614985 A JP 25614985A JP 25614985 A JP25614985 A JP 25614985A JP H0332144 B2 JPH0332144 B2 JP H0332144B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent dielectric
- dielectric film
- refractive index
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 15
- -1 rare earth transition metal Chemical class 0.000 claims description 12
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 229910052723 transition metal Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 94
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 239000010409 thin film Substances 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000005374 Kerr effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
Description
【発明の詳細な説明】
（発明の技術分野）
本発明はレーザー等の光を、照射することによ
り情報の記録・再生・消去等を行なう磁気光学記
憶素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a magneto-optical storage element that records, reproduces, erases, etc. information by irradiating it with light such as a laser.
（発明の技術的背景とその問題点）
近年、情報の書換えが可能な光デイスクとして
磁気光学記憶素子の研究が活発に行なわれてい
る。中でも記憶媒体として希土類遷移金属非晶質
合金薄膜を用いて構成したものは、記録ビツトが
粒界の影響を受けない点及び記録媒体の膜を大面
積に亙つて比較的容易に作成することが可能であ
ることから特に注目を集めている。しかし、上記
記録媒体として希土類遷移金属非晶質合金薄膜を
用いて磁気光学記憶素子を構成したものでは、一
般に光磁気効果（カー効果、フアラデー効果）が
十分に得られず、その為再生信号のＳ／Ｎが不十
分なものであつた。(Technical background of the invention and its problems) In recent years, research has been actively conducted on magneto-optical storage elements as optical disks on which information can be rewritten. Among these, storage media constructed using rare earth transition metal amorphous alloy thin films have the advantage that the recording bits are not affected by grain boundaries and that the film of the recording medium can be formed relatively easily over a large area. It is attracting particular attention because it is possible. However, with magneto-optical storage elements constructed using rare earth transition metal amorphous alloy thin films as the recording medium, it is generally not possible to obtain sufficient magneto-optical effects (Kerr effect, Faraday effect). The S/N ratio was insufficient.
これに対する対応策として既に本発明者等は例
えば特開昭57−12428号公報に示される反射膜構
造と呼ばれる素子構造の改良を提案した。この素
子構造の一例として、ガラス、ポリカーボネー
ト、アクリル、エポキシ等の透明基板上に第１の
透明誘電体膜である透明なSiO膜（膜厚120nｍ）
が形成され、該SiO膜上に希土類遷移金属膜であ
るGdTbFe合金薄膜（膜厚15nｍ）が形成され、
更に該GdTbFe合金薄膜上に第２の透明誘電体膜
である透明なSiO2膜（膜厚50nｍ）が形成され、
該SiO2膜上に反射膜であるCu膜（膜厚50nｍ）が
形成されたものが存在する。以上の構造では見か
けのカー回転角が1.75゜もの大きな値が得られた。 As a countermeasure to this problem, the inventors of the present invention have already proposed an improvement in the element structure called a reflective film structure, as disclosed in, for example, Japanese Patent Application Laid-Open No. 57-12428. As an example of this device structure, a transparent SiO film (film thickness 120 nm), which is the first transparent dielectric film, is placed on a transparent substrate made of glass, polycarbonate, acrylic, epoxy, etc.
is formed, and a GdTbFe alloy thin film (film thickness 15 nm), which is a rare earth transition metal film, is formed on the SiO film,
Furthermore, a transparent SiO 2 film (thickness: 50 nm), which is a second transparent dielectric film, is formed on the GdTbFe alloy thin film,
There is one in which a reflective Cu film (50 nm thick) is formed on the SiO 2 film. In the above structure, the apparent Kerr rotation angle was as large as 1.75°.
しかしながら、この構造の場合、希土類遷移金
属合金薄膜がSiO膜およびSiO2膜（透明誘電体
膜）中に存在する酸素により酸化され、該合金膜
の磁気記録媒体としての能力を著しく阻害され
る。 However, in the case of this structure, the rare earth transition metal alloy thin film is oxidized by oxygen present in the SiO film and the SiO 2 film (transparent dielectric film), and the ability of the alloy film as a magnetic recording medium is significantly inhibited.
この酸化の問題を解決するために、上記SiO膜
およびSiO2膜に代わる保護膜として本発明者等
は窒化アルミニウム等の酸素を含まないものが適
当である事を提案した（特開昭59−110052号公
報）。 In order to solve this oxidation problem, the present inventors proposed that a protective film that does not contain oxygen, such as aluminum nitride, would be suitable as a protective film in place of the SiO film and SiO 2 film (Japanese Patent Laid-Open No. 1983-1993-1). Publication No. 110052).
しかしながら、窒化アルミニウムは熱伝導率が
高く、記録時に高いレーザーパワーを必要とす
る。 However, aluminum nitride has high thermal conductivity and requires high laser power during recording.
（発明の目的）
本発明は以上の問題点を解消する為になされた
ものであり、磁気光学特性を充分に確保し得ると
共に希土類遷移金属合金薄膜の酸化を防止し、信
頼性を高め、且つ、記録感度を向上せしめる新規
な磁気光学記憶素子を提供することを目的とす
る。(Object of the Invention) The present invention has been made to solve the above problems, and is capable of ensuring sufficient magneto-optical properties, preventing oxidation of rare earth transition metal alloy thin films, increasing reliability, and The object of the present invention is to provide a novel magneto-optical memory element that improves recording sensitivity.
即ち、本発明は透明基板上に順次第１透明誘電
体膜、希土類遷移金属合金膜、第２透明誘電体膜
および反射膜を被覆した磁気光学記憶素子におい
て、両透明誘電体膜が窒化アルミニウムシリコン
により形成され、かつ第１透明誘電体膜の屈折率
が第２透明誘電体膜のそれより大きいことを特徴
とする磁気光学記憶素子を提供する。 That is, the present invention provides a magneto-optical memory element in which a transparent substrate is sequentially coated with a first transparent dielectric film, a rare earth transition metal alloy film, a second transparent dielectric film, and a reflective film, in which both transparent dielectric films are made of aluminum silicon nitride. Provided is a magneto-optical memory element formed by the above method, characterized in that the refractive index of the first transparent dielectric film is larger than that of the second transparent dielectric film.
（発明の実施例）
以下、図面を用いて本発明の一実施例を詳細に
説明する。(Embodiment of the Invention) Hereinafter, an embodiment of the present invention will be described in detail using the drawings.
第１図は、本発明に係る磁気光学記憶素子の一
実施例の構成を示す一部側面断面図である。同図
において、１はガラス、ポリカーボネート、アク
リル、エポキシ等からなる透明基板であり、該透
明基板１上に透明誘電体膜である透明な窒化アル
ミニウムシリコン（AlSiN）膜２（膜厚80nｍ）
を形成し、このAlSiN膜２上に希土類遷移金属合
金薄膜であるGdTbFe合金薄膜３（膜厚20nｍ）
を形成し、このGdTbFe合金薄膜３上に第２の透
明誘電体膜である透明な窒化アルミニウムシリコ
ン（AlSiN）膜４（膜厚25nｍ）を形成し、この
AlSiN膜４上に反射膜であるAl膜５（膜厚40nｍ
以上）を形成している。 FIG. 1 is a partial side cross-sectional view showing the structure of an embodiment of a magneto-optical storage element according to the present invention. In the figure, 1 is a transparent substrate made of glass, polycarbonate, acrylic, epoxy, etc., and a transparent aluminum silicon nitride (AlSiN) film 2 (film thickness 80 nm), which is a transparent dielectric film, is on the transparent substrate 1.
On this AlSiN film 2, a GdTbFe alloy thin film 3 (film thickness 20 nm), which is a rare earth transition metal alloy thin film, is formed.
A transparent aluminum silicon nitride (AlSiN) film 4 (film thickness 25 nm), which is a second transparent dielectric film, is formed on this GdTbFe alloy thin film 3.
Al film 5 (film thickness 40 nm) is a reflective film on AlSiN film 4.
above).
窒化アルミニウムシリコン（AlSiN）膜２，４
は通常スパツタリング法により形成する。スパツ
タリング法による窒化アルミニウムシリコン膜の
作製方法に於いて、ターゲツトとしては、高純度
のAlをベースとし、該Al上に高純度のSiを所望
の膜組成となる分量だけ並べた謂ゆる複合ターゲ
ツトを使用しスパツタガスはArとN2の混合ガス
あるいはN2のみを使用し、反応性スパツタによ
り窒化アルミニウムシリコン膜を作製する。 Aluminum silicon nitride (AlSiN) film 2, 4
is usually formed by a sputtering method. In the method for producing an aluminum silicon nitride film by the sputtering method, a so-called composite target is used, in which a high-purity Al is used as a base, and high-purity Si is arranged on the Al in an amount that gives the desired film composition. The sputtering gas used is a mixed gas of Ar and N2 or only N2 , and an aluminum nitride silicon film is produced by reactive sputtering.
上記作製方法の実施例においてはターゲツトと
して組成コントロールの容易な簡便タイプの複合
ターゲツトを用いたが、所望の組成が満足されれ
ば、AlとSiの合金ターゲツトを用いても良い。
又、ここでは、反応性スパツタ法を用いた実施例
を示したが、本発明はこれに限定されるものでは
ない。即ち、例えば膜作製は蒸着であつて良く、
窒化アルミニウムシリコンターゲツトからスパツ
タリングで製膜しても良い。つまり成膜時の条件
により形成された膜の屈折率を変化させることが
可能な製膜方法であれば、本発明に適用すること
が出来る。 In the embodiment of the above manufacturing method, a simple type composite target whose composition can be easily controlled is used as the target, but an alloy target of Al and Si may be used as long as the desired composition is satisfied.
Further, although an example using the reactive sputtering method has been shown here, the present invention is not limited thereto. That is, for example, film formation may be vapor deposition;
The film may be formed by sputtering from an aluminum nitride silicon target. In other words, any film forming method that can change the refractive index of the formed film depending on the conditions during film forming can be applied to the present invention.
GdTbFe合金薄膜３と反射膜であるAl膜５は
通常、スパツタリングあるいは蒸着等の方法で形
成される。 The GdTbFe alloy thin film 3 and the reflective Al film 5 are usually formed by a method such as sputtering or vapor deposition.
本発明によれば、第１の透明誘電体膜２として
高い屈折率を有する窒化アルミニウムシリコン膜
を用い、第２の透明誘電体膜４として低い屈折率
を有する窒化アルミニウムシリコン膜を用いる。 According to the present invention, an aluminum silicon nitride film having a high refractive index is used as the first transparent dielectric film 2, and an aluminum silicon nitride film having a low refractive index is used as the second transparent dielectric film 4.
屈折率はスパツタリング製造時のArとN2のガ
スの圧力を変化させることにより（ガス比率は一
定とした）、変える事ができることが解つた。第
２図にArとN2のガス比率は一定で、ガス圧力を
変化させたときの製膜された窒化アルミニウム膜
の屈折率変化を示す。この図から明らかなよう
に、屈折率ガス圧力の低い条件で製膜した場合に
は屈折率が大きく、ガス圧力が高い条件で製膜し
た場合には、屈折率が低くなる。 It was found that the refractive index can be changed by changing the pressure of Ar and N 2 gases during sputtering manufacturing (gas ratio kept constant). FIG. 2 shows the change in the refractive index of the aluminum nitride film formed when the gas pressure of Ar and N 2 is constant and the gas pressure is changed. As is clear from this figure, when the film is formed under conditions of low refractive index gas pressure, the refractive index is high, and when the film is formed under conditions of high gas pressure, the refractive index is low.
第１の透明誘電体膜２の屈折率を高くすると、
カー回転角の増大が大きくなるからである。これ
は透明基板側からレーザー光が入射した場合、入
射レーザー光は第１の透明誘電体膜内部で反射を
繰り返し、干渉した結果、見かけ上カー回転角が
増大することによる。 When the refractive index of the first transparent dielectric film 2 is increased,
This is because the Kerr rotation angle increases significantly. This is because when laser light is incident from the transparent substrate side, the incident laser light is repeatedly reflected inside the first transparent dielectric film and interferes, resulting in an apparent increase in the Kerr rotation angle.
一方、第２の透明誘電体膜４は屈折率が小さい
方がよい。これは希土類遷移金属合金薄膜３を通
過した入射光により生起されるフアラデー効果が
カー効果と合わされることにより、見かけ上のカ
ー回転角が増大することによる。 On the other hand, it is better for the second transparent dielectric film 4 to have a smaller refractive index. This is because the Faraday effect caused by the incident light passing through the rare earth transition metal alloy thin film 3 is combined with the Kerr effect, thereby increasing the apparent Kerr rotation angle.
上記構造の磁気光学記憶素子に於いては、上記
フアラデー効果を如何にしてカー効果に加えるか
が極めて重要になる。フアラデー効果のみについ
て謂えば記録媒体の膜厚を厚くすれば回転角を大
きくできるが、入射レーザー光が記録媒体に吸収
され、透過光の減少が生じる為、初期の目的を達
成し得ない。よつて上記記録媒体の適切な膜厚は
概ね10〜50nｍであり、その値は使用するレーザ
ー光の波長や上記反射層の屈折率等により決定さ
れる。上記反射層に対して求められる条件は上記
の説明から判るように反射率が高いことにある。
言い換えると入射レーザー光を反射層内に入れな
いことであり、光学的に見れば反射層（第２の透
明誘電体膜＋反射膜）の等価的な屈折率が０に近
いことが必要である。この為には第２の透明誘電
体膜の実数部の値が小さく且つ虚数部の値が０で
あり、更に反射膜の実数部の値が小さいことが必
要である。 In the magneto-optical memory element having the above structure, it is extremely important how to add the Faraday effect to the Kerr effect. Regarding the Faraday effect alone, the rotation angle can be increased by increasing the film thickness of the recording medium, but the incident laser light is absorbed by the recording medium and the amount of transmitted light decreases, so the initial objective cannot be achieved. Therefore, the appropriate film thickness of the recording medium is approximately 10 to 50 nm, and its value is determined by the wavelength of the laser beam used, the refractive index of the reflective layer, etc. As can be seen from the above description, the condition required for the reflective layer is that it has a high reflectance.
In other words, the incident laser beam is not allowed to enter the reflective layer, and from an optical perspective, the equivalent refractive index of the reflective layer (second transparent dielectric film + reflective film) must be close to 0. . For this purpose, it is necessary that the value of the real part of the second transparent dielectric film is small and the value of the imaginary part is 0, and furthermore, the value of the real part of the reflective film is small.
本発明の特徴点は以下の通りである。 The features of the present invention are as follows.
窒化アルミニウムシリコンは極めて安定であ
り、又窒化物である為、酸化物の膜に比較して
緻密な膜が形成できる。 Aluminum silicon nitride is extremely stable, and since it is a nitride, a denser film can be formed than an oxide film.
第１の透明誘電体膜２である窒化アルミニウ
ムシリコン膜を屈折率が2.0程度となるように
製膜し、一方、第２の透明誘電体膜である窒化
アルミニウムシリコン膜を屈折率が1.9〜1.8程
度となるように製膜することにより、相対的に
第１の透明誘電体膜の屈折率を第２の透明誘電
体膜の屈折率より大きくし、その結果、前述し
た如く屈折率の大きい第１の透明誘電体膜によ
つてカー回転角の増大効果が得られ、一方、屈
折率の小さい第２の透明誘電体膜４によつて反
射率を高くすることができる。即ち上記屈折率
の異なる窒化アルミニウムシリコン膜の組合わ
せは極めて都合が良いことになる。尚、上記構
造において窒化アルミニウムシリコン膜２は
80nｍをピークとして±10％程度の膜厚であれ
ば良好であり、又、窒化アルミニウムシリコン
膜４は25nｍをピークとして±10％程度の膜厚
であれば良好である。 The aluminum silicon nitride film that is the first transparent dielectric film 2 is formed to have a refractive index of about 2.0, while the aluminum silicon nitride film that is the second transparent dielectric film has a refractive index of 1.9 to 1.8. By forming the film such that the refractive index of the first transparent dielectric film is relatively higher than that of the second transparent dielectric film, as described above, the refractive index of the first transparent dielectric film is relatively larger than that of the second transparent dielectric film. The effect of increasing the Kerr rotation angle can be obtained by the first transparent dielectric film, while the reflectance can be increased by the second transparent dielectric film 4 having a small refractive index. That is, the above combination of aluminum nitride silicon films having different refractive indexes is extremely convenient. In the above structure, the aluminum nitride silicon film 2 is
It is good if the film thickness is about ±10% with a peak of 80 nm, and it is good if the aluminum nitride silicon film 4 has a film thickness of about ±10% with a peak of 25 nm.
上記窒化アルミニウムシリコンはその成分と
して酸素を含有しないので希土類遷移金属合金
薄膜が酸化される危険性を極度に減少せしめ得
る。 Since the aluminum silicon nitride does not contain oxygen as a component, the risk of oxidation of the rare earth transition metal alloy thin film can be extremely reduced.
窒化アルミニウムシリコンは耐湿耐酸性膜と
して有用な窒化アルミニウムに比べ熱伝導率が
低く記録媒体への記録感度を向上せしめる効果
をもたらす。第３図はこの効果について行なつ
た実験結果を示すもので、第１図に構成を示し
た磁気光学記憶素子に於いて、第１、第２の誘
電体膜である窒化アルミニウムシリコン膜のシ
リコン組成（wt％）を０〜８％の範囲で変化
させ、記録感度の変化を見たものである。 Aluminum silicon nitride has a lower thermal conductivity than aluminum nitride, which is useful as a moisture-resistant and acid-resistant film, and has the effect of improving the recording sensitivity of a recording medium. FIG. 3 shows the results of an experiment conducted regarding this effect. In the magneto-optical memory element whose structure is shown in FIG. The composition (wt%) was varied in the range of 0 to 8%, and changes in recording sensitivity were observed.
記録感度は一定パワーで記録した時のビツト
の大きさで判断した。 Recording sensitivity was determined by the bit size when recording at a constant power.
第３図から明らかなように誘電体として窒化
アルミニウムを用いた時（シリコン組成0wt
％）よりも窒化アルミニウムシリコン膜を用い
た方が記録感度が向上している。 As is clear from Figure 3, when aluminum nitride is used as the dielectric (silicon composition is 0 wt.
%), recording sensitivity is improved by using an aluminum nitride silicon film.
（発明の効果）
以上の如く、本発明によれば、屈折率の異なる
窒化アルミニウムシリコン膜を組合わせて用いる
ことにより記録媒体の耐蝕性及び記録感度を共に
良好に確保せしめることができる。(Effects of the Invention) As described above, according to the present invention, by using a combination of aluminum silicon nitride films having different refractive indexes, it is possible to ensure both excellent corrosion resistance and recording sensitivity of a recording medium.
第１図は、本発明に係る磁気光学記憶素子の一
実施例の構成を示す一部側面断面図、第２図は反
応性スパツタ法によつて作製される膜の屈折率と
ガス圧力の関係を示す特性図、第３図は窒化アル
ミニウムシリコン膜中のシリコン組成と記録感度
の関係を示す特性図である。
図中、番号は以下の通りである：１……透明基
板、２……第１の透明誘電体膜（AlSiN膜）、３
……希土類遷移金属合金薄膜、４……第２の透明
誘電体膜（AlSiN膜）、５……反射膜（Al膜）、
６……レーザー光。
FIG. 1 is a partial side sectional view showing the structure of an embodiment of the magneto-optical memory element according to the present invention, and FIG. 2 is the relationship between the refractive index and gas pressure of a film produced by the reactive sputtering method. FIG. 3 is a characteristic diagram showing the relationship between the silicon composition in the aluminum silicon nitride film and the recording sensitivity. In the figure, the numbers are as follows: 1...Transparent substrate, 2...First transparent dielectric film (AlSiN film), 3
... Rare earth transition metal alloy thin film, 4 ... Second transparent dielectric film (AlSiN film), 5 ... Reflective film (Al film),
6...Laser light.
Claims (1)
遷移金属合金膜、第２透明誘電体膜および反射膜
を被覆した磁気光学記憶素子において、両透明誘
電体膜が窒化アルミニウムシリコンにより形成さ
れ、かつ第１透明誘電体膜の屈折率が第２透明誘
電体膜のそれより大きいことを特徴とする磁気光
学記憶素子。 ２ 透明誘電体膜がスパツタリングにより形成さ
れる第１項記載の磁気光学記載素子。 ３ 第１透明誘電体膜の屈折率が約2.0であり、
第２透明誘電体膜の屈折率が約1.9〜約1.8である
第１項記載の磁気光学記憶素子。 ４ 屈折率の差がスパツタリング時のスパツタガ
ス圧力の差により得られる第３項記載の磁気光学
記憶素子。[Scope of Claims] 1. A magneto-optical memory element in which a transparent substrate is sequentially coated with a first transparent dielectric film, a rare earth transition metal alloy film, a second transparent dielectric film, and a reflective film, in which both transparent dielectric films are nitrided. 1. A magneto-optical memory element formed of aluminum silicon, characterized in that the refractive index of the first transparent dielectric film is larger than that of the second transparent dielectric film. 2. The magneto-optical writing element according to item 1, wherein the transparent dielectric film is formed by sputtering. 3 The refractive index of the first transparent dielectric film is approximately 2.0,
2. The magneto-optic storage element according to claim 1, wherein the second transparent dielectric film has a refractive index of about 1.9 to about 1.8. 4. The magneto-optical memory element according to item 3, wherein the difference in refractive index is obtained by a difference in sputtering gas pressure during sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25614985A JPS62114141A (en) | 1985-11-14 | 1985-11-14 | Magnetooptic memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25614985A JPS62114141A (en) | 1985-11-14 | 1985-11-14 | Magnetooptic memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62114141A JPS62114141A (en) | 1987-05-25 |
| JPH0332144B2 true JPH0332144B2 (en) | 1991-05-10 |
Family
ID=17288584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25614985A Granted JPS62114141A (en) | 1985-11-14 | 1985-11-14 | Magnetooptic memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62114141A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2826726B2 (en) * | 1986-05-28 | 1998-11-18 | セイコーエプソン株式会社 | Manufacturing method of optical recording medium |
| JPS6231052A (en) * | 1985-04-25 | 1987-02-10 | Seiko Epson Corp | Optical recording medium |
| JPS62139156A (en) * | 1985-12-11 | 1987-06-22 | Sharp Corp | Optical recording device |
| JPH0785314B2 (en) * | 1986-02-05 | 1995-09-13 | 沖電気工業株式会社 | Protective film for magneto-optical recording medium |
| JP2579465B2 (en) * | 1986-06-10 | 1997-02-05 | セイコーエプソン株式会社 | Method for manufacturing magneto-optical recording medium |
| JP2735575B2 (en) * | 1988-08-24 | 1998-04-02 | 日立マクセル株式会社 | Magneto-optical recording medium |
| JP2654689B2 (en) * | 1989-05-16 | 1997-09-17 | 富士写真フイルム株式会社 | Magneto-optical recording medium |
| JP2631024B2 (en) * | 1990-04-02 | 1997-07-16 | 富士写真フイルム株式会社 | Method for manufacturing magneto-optical recording medium |
-
1985
- 1985-11-14 JP JP25614985A patent/JPS62114141A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62114141A (en) | 1987-05-25 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |