KR920022388A - 감압 cvd 장치 - Google Patents

감압 cvd 장치 Download PDF

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Publication number
KR920022388A
KR920022388A KR1019920007913A KR920007913A KR920022388A KR 920022388 A KR920022388 A KR 920022388A KR 1019920007913 A KR1019920007913 A KR 1019920007913A KR 920007913 A KR920007913 A KR 920007913A KR 920022388 A KR920022388 A KR 920022388A
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KR
South Korea
Prior art keywords
cvd
source gas
processed
substrate
passages
Prior art date
Application number
KR1019920007913A
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English (en)
Other versions
KR100266840B1 (ko
Inventor
도시아끼 하세가와
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14464191&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR920022388(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920022388A publication Critical patent/KR920022388A/ko
Application granted granted Critical
Publication of KR100266840B1 publication Critical patent/KR100266840B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering

Abstract

내용 없음.

Description

감압 CVD 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 관한 감압 CVD 장치의 일실시예를 도시한 개략도,
제2도는 본원 발명에 관한 콜리메이터 부착 샤워헤드를 도시한 개략도,
제3도는 본원 발명에 관한 장치를 사용하여, 블랭킷텅스텐층을 형성한 단면도.

Claims (2)

  1. CVD 원료가스 도입구를 갖는 CVD 반응실과, 피처리기판을 재치하는 지지대와, 상기 CVD 원료가스 도입구와 상기 피처리기판간에 배치되는 이 원료가스를 균일하게 분배하기 위한 가스분배수단을 구비하는 감압 CVD 장치에 있어서, 상기 가스분배수단에 상기 피처리기판면에 대해 대략 수직방향에 따른 복수의 통로를 배설한 것을 특징으로 하는 감압 CVD 장치.
  2. 제1항에 있어서, 상기 복수의 통로의 길이가 각각 상기 CVD 원료가스의 평균자유행정이상인 것을 특징으로 하는 감압 CVD 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920007913A 1991-05-13 1992-05-11 감압 cvd 장치 KR100266840B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-107635 1991-05-13
JP10763591A JP3175189B2 (ja) 1991-05-13 1991-05-13 減圧ｃｖｄ装置

Publications (2)

Publication Number Publication Date
KR920022388A true KR920022388A (ko) 1992-12-19
KR100266840B1 KR100266840B1 (ko) 2000-11-01

Family

ID=14464191

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920007913A KR100266840B1 (ko) 1991-05-13 1992-05-11 감압 cvd 장치

Country Status (2)

Country Link
JP (1) JP3175189B2 (ko)
KR (1) KR100266840B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
JPWO2004111297A1 (ja) * 2003-06-10 2006-07-20 東京エレクトロン株式会社 処理ガス供給機構、成膜装置および成膜方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602298B2 (ja) * 1988-01-30 1997-04-23 日本電気株式会社 気相成長装置
JPH0266174A (ja) * 1988-08-30 1990-03-06 Matsushita Electric Ind Co Ltd 光ｃｖｄ装置

Also Published As

Publication number Publication date
JPH06220639A (ja) 1994-08-09
JP3175189B2 (ja) 2001-06-11
KR100266840B1 (ko) 2000-11-01

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