KR920018855A - GaAs 웨이퍼(wafer)의 에칭(etching)방법 - Google Patents

GaAs 웨이퍼(wafer)의 에칭(etching)방법 Download PDF

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Publication number
KR920018855A
KR920018855A KR1019910004761A KR910004761A KR920018855A KR 920018855 A KR920018855 A KR 920018855A KR 1019910004761 A KR1019910004761 A KR 1019910004761A KR 910004761 A KR910004761 A KR 910004761A KR 920018855 A KR920018855 A KR 920018855A
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KR
South Korea
Prior art keywords
gaas wafer
etching method
predetermined time
etching
wafer
Prior art date
Application number
KR1019910004761A
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English (en)
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KR930007970B1 (ko
Inventor
최민호
윤현재
윤정수
이만우
Original Assignee
박원근
금성전선 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 박원근, 금성전선 주식회사 filed Critical 박원근
Priority to KR1019910004761A priority Critical patent/KR930007970B1/ko
Publication of KR920018855A publication Critical patent/KR920018855A/ko
Application granted granted Critical
Publication of KR930007970B1 publication Critical patent/KR930007970B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

GaAs 웨이퍼(wafer)의 에칭(etching)방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. H2SO4: H2O2: H2O＝5 : 1 :1 의 조성비율을 갖으며 초음파를 통해 골고루 혼합한 에칭(etching) 용액에, 웨이퍼(wafer) 담체(carrier)를 소정시간동안 액침(immersion)시키며 대기중에 들어올리는 과정을 소정의 시간동안에 반복해서 실시하는 한편, 최종 단계에서는 증류수로 린스(rinse) 시킴을 특징으로 하는 GaAs 웨이퍼(wafer)의 에칭(etching)방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910004761A 1991-03-27 1991-03-27 GaAs 웨이퍼(wafer)의 에칭(etching)방법 KR930007970B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910004761A KR930007970B1 (ko) 1991-03-27 1991-03-27 GaAs 웨이퍼(wafer)의 에칭(etching)방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910004761A KR930007970B1 (ko) 1991-03-27 1991-03-27 GaAs 웨이퍼(wafer)의 에칭(etching)방법

Publications (2)

Publication Number Publication Date
KR920018855A true KR920018855A (ko) 1992-10-22
KR930007970B1 KR930007970B1 (ko) 1993-08-25

Family

ID=19312519

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004761A KR930007970B1 (ko) 1991-03-27 1991-03-27 GaAs 웨이퍼(wafer)의 에칭(etching)방법

Country Status (1)

Country Link
KR (1) KR930007970B1 (ko)

Also Published As

Publication number Publication date
KR930007970B1 (ko) 1993-08-25

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