KR920018819A - 집속이온빔 장치 - Google Patents

집속이온빔 장치 Download PDF

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Publication number
KR920018819A
KR920018819A KR1019920004599A KR920004599A KR920018819A KR 920018819 A KR920018819 A KR 920018819A KR 1019920004599 A KR1019920004599 A KR 1019920004599A KR 920004599 A KR920004599 A KR 920004599A KR 920018819 A KR920018819 A KR 920018819A
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KR
South Korea
Prior art keywords
ion beam
stage
focused ion
sample
measuring element
Prior art date
Application number
KR1019920004599A
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English (en)
Other versions
KR100274265B1 (ko
Inventor
시게루 노구찌
야스시 가와이
Original Assignee
기다지마 요시도시
다이닛뽕 인사쓰 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 기다지마 요시도시, 다이닛뽕 인사쓰 가부시기가이샤 filed Critical 기다지마 요시도시
Publication of KR920018819A publication Critical patent/KR920018819A/ko
Application granted granted Critical
Publication of KR100274265B1 publication Critical patent/KR100274265B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/0013—Positioning or observing workpieces, e.g. with respect to the impact; Aligning, aiming or focusing electronbeams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/02—Control circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Measurement Of Radiation (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

내용 없음

Description

집속이온빔 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 일실시예에 관한 집속이온빔장치의 빔조사 부분의 구성을 도시한 사시도.
제2도는 본원 발명의 일실시예에 관한 집속이온빔장치의 전자샤워측정부분의 구성을 도시한 블록도.
제3도는 제2도에 도시한 장치에 있어서의 디스플레이장치의 화면상에 표시된 전자밀도분포의 일예를 나타낸 도면.

Claims (5)

  1. 시료를 XY평면상에 재치하기 위한 XY스테이지와, 이 XY스테이지를 XY평면에 따라 이동시키기 위한 구동계와, 상기 XY스테이지상의 시료에 이온빔을 조사(照射)하기 위한 이온총과, 이온빔의 조사에 의한 대전(帶電)을 중화하기 위해 상기 시료에 전자샤워를 조사하는 전자총과, 상기 XY스테이지상의 일부에 배설되어 전자조사에 의해 발생한 전류를 측정하기 위한 미소전류측정소자와, 상기 구동계에 대해 소정의 제어신호를 부여함으로써 상기 전자샤워조사영역에 있어서 상기 미소전류측정소자를 X방향 및 Y방향으로 이동시켜서, 각 위치에 있어서의 상기 미소전류측정소자에 의한 측정전류치를 검출하는 제어장치를 구비한 것을 특징으로 하는 집속이온빔장치.
  2. 제1항에 있어서, 제어장치에 의해 검출된 측정전류치의 분포를 화면에 표시하기 위한 디스플레이장치를 더 배설한 것을 특징으로 하는 집속이온빔장치.
  3. 제1항에 있어서, 미소전류측정소자로서 파라데이컵을 사용한 것을 특징으로 하는 집속이온빔장치.
  4. 제3항에 있어서, 미소전류를 측정할 때에, 파라데이컵의 직경에 대응한 피치로 XY스테이지를 구동하도록 한 것을 특징으로 하는 집속이온빔장치.
  5. 제3항에 있어서, 파라데이컵의 측정면을 XY스테이지상에 재치된 시료의 상면과 같은 높이로 조절할 수 있도록 구성한 것을 특징으로 하는 집속이온빔장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004599A 1991-03-28 1992-03-20 집속이온빔장치 KR100274265B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3089569A JP2965739B2 (ja) 1991-03-28 1991-03-28 集束イオンビーム装置
JP91-089569 1991-03-28

Publications (2)

Publication Number Publication Date
KR920018819A true KR920018819A (ko) 1992-10-22
KR100274265B1 KR100274265B1 (ko) 2000-12-15

Family

ID=13974442

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920004599A KR100274265B1 (ko) 1991-03-28 1992-03-20 집속이온빔장치

Country Status (3)

Country Link
US (1) US5164596A (ko)
JP (1) JP2965739B2 (ko)
KR (1) KR100274265B1 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52130357A (en) * 1976-04-26 1977-11-01 Shinku Riko Kk Highhpressure thermobalance
JP2774878B2 (ja) * 1991-04-25 1998-07-09 株式会社日立製作所 多層膜絶縁物試料の二次イオン質量分析方法
JP3117836B2 (ja) * 1993-03-02 2000-12-18 セイコーインスツルメンツ株式会社 集束イオンビーム装置
US5852298A (en) * 1995-03-30 1998-12-22 Ebara Corporation Micro-processing apparatus and method therefor
AU2677295A (en) * 1995-06-07 1996-12-30 Applied Materials, Inc. Beam stop apparatus for an ion implanter
GB9515090D0 (en) * 1995-07-21 1995-09-20 Applied Materials Inc An ion beam apparatus
US6613240B2 (en) * 1999-12-06 2003-09-02 Epion Corporation Method and apparatus for smoothing thin conductive films by gas cluster ion beam
KR100640567B1 (ko) * 2000-03-06 2006-10-31 삼성전자주식회사 집속 이온 빔 장치
US6465795B1 (en) * 2000-03-28 2002-10-15 Applied Materials, Inc. Charge neutralization of electron beam systems
JP4168381B2 (ja) * 2000-12-26 2008-10-22 ティーイーエル エピオン インク． ガスクラスターイオンビームのための充電制御および線量測定システム
US20060192144A1 (en) * 2005-02-11 2006-08-31 Ptr-Precision Technologies, Inc. Electron beam welding method and apparatus
US8851442B2 (en) * 2008-01-22 2014-10-07 Honeywell International Inc. Aerogel-bases mold for MEMS fabrication and formation thereof
US8049168B2 (en) * 2008-12-18 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Time-of-flight segmented Faraday

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US4675530A (en) * 1985-07-11 1987-06-23 Eaton Corporation Charge density detector for beam implantation
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
US4976843A (en) * 1990-02-02 1990-12-11 Micrion Corporation Particle beam shielding
KR930007369A (ko) * 1991-10-16 1993-05-20 심명수 건 두부

Also Published As

Publication number Publication date
JP2965739B2 (ja) 1999-10-18
KR100274265B1 (ko) 2000-12-15
JPH04299821A (ja) 1992-10-23
US5164596A (en) 1992-11-17

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