KR920015637A - Manufacturing method of high voltage semiconductor - Google Patents

Manufacturing method of high voltage semiconductor Download PDF

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Publication number
KR920015637A
KR920015637A KR1019910000635A KR910000635A KR920015637A KR 920015637 A KR920015637 A KR 920015637A KR 1019910000635 A KR1019910000635 A KR 1019910000635A KR 910000635 A KR910000635 A KR 910000635A KR 920015637 A KR920015637 A KR 920015637A
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KR
South Korea
Prior art keywords
silicon substrate
retrograde well
opposite
high voltage
manufacturing
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Application number
KR1019910000635A
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Korean (ko)
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KR940002779B1 (en
Inventor
손해윤
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019910000635A priority Critical patent/KR940002779B1/en
Publication of KR920015637A publication Critical patent/KR920015637A/en
Application granted granted Critical
Publication of KR940002779B1 publication Critical patent/KR940002779B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

고압 반도체의 제조방법Manufacturing method of high voltage semiconductor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 실시예에 따른 고압 반도체의 제조 공정도.1 is a manufacturing process diagram of a high voltage semiconductor according to an embodiment of the present invention.

Claims (1)

실리콘 기판(11)위에 LOCOS 공정을 이용하여 필드 산화막(15)을 형성하고, 리트로 그레이드 웰을 형성하기 위하여 포토 공정을 거친 후 상기 실리콘 기판(11)과 반대형의 이온으로 이온주입하며, 소오스/드레인 영역에 얕게 도핑된 영역을 형성하기 위해 리트로 그레이드 웰과 실리콘 기판과 반대형의 이온을 각각 이온주입한 후 열처리 공정을 동시에 진행하여 리트로 그레이드 웰(16)을 형성하고, 상기 리트로 그레이드 웰(16)내의 소오드/드레인 영역에 리트로 그레이드 웰(16)과 반대형의 얕게 도핑된 영역(17)을 형성하며, 실리콘 기판(11)내에 소오스/드레인 영역에 실리콘 기판(11)과 반대형의 얕게 도핑된 영역(18)을 형성하는 것을 특징으로 하는 고압 반도체의 제조방법.A field oxide film 15 is formed on the silicon substrate 11 using a LOCOS process, a photo process is performed to form a retrograde well, and ion implantation is performed with ions opposite to the silicon substrate 11. In order to form a doped region in the drain region, the retrograde well and the silicon substrate and the opposite type of ions are implanted, respectively, and the heat treatment process is performed at the same time to form the retrograde well 16 and the retrograde well 16 A shallow doped region 17 opposite to the retrograde well 16 is formed in the source / drain regions within the silicon substrate 11 and shallowly opposite the silicon substrate 11 to the source / drain regions within the silicon substrate 11. Method of manufacturing a high voltage semiconductor, characterized in that to form a doped region (18). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910000635A 1991-01-16 1991-01-16 Manufacturing method of high-voltage transistor KR940002779B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910000635A KR940002779B1 (en) 1991-01-16 1991-01-16 Manufacturing method of high-voltage transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000635A KR940002779B1 (en) 1991-01-16 1991-01-16 Manufacturing method of high-voltage transistor

Publications (2)

Publication Number Publication Date
KR920015637A true KR920015637A (en) 1992-08-27
KR940002779B1 KR940002779B1 (en) 1994-04-02

Family

ID=19309890

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000635A KR940002779B1 (en) 1991-01-16 1991-01-16 Manufacturing method of high-voltage transistor

Country Status (1)

Country Link
KR (1) KR940002779B1 (en)

Also Published As

Publication number Publication date
KR940002779B1 (en) 1994-04-02

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