KR920015640A - High Voltage Semiconductor Device - Google Patents

High Voltage Semiconductor Device Download PDF

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Publication number
KR920015640A
KR920015640A KR1019910001131A KR910001131A KR920015640A KR 920015640 A KR920015640 A KR 920015640A KR 1019910001131 A KR1019910001131 A KR 1019910001131A KR 910001131 A KR910001131 A KR 910001131A KR 920015640 A KR920015640 A KR 920015640A
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KR
South Korea
Prior art keywords
semiconductor device
concentration source
ion
drain region
source
Prior art date
Application number
KR1019910001131A
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Korean (ko)
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KR940004268B1 (en
Inventor
오창봉
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910001131A priority Critical patent/KR940004268B1/en
Publication of KR920015640A publication Critical patent/KR920015640A/en
Application granted granted Critical
Publication of KR940004268B1 publication Critical patent/KR940004268B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음No content

Description

고압용 반도체 장치High Voltage Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 고압용 반도체 장치의 단면도, 제4도는 본 발명의 고압용 반도체 장치의 제조공정도.2 is a cross-sectional view of the semiconductor device for high pressure of the present invention, Figure 4 is a manufacturing process diagram of the semiconductor device for high pressure of the present invention.

Claims (3)

제1도전형의 반도체 기판(21)에 제2도전형의 고농도의 소오스, 드레인 영역(29)을 제2도전형의 저농도의 소오스, 드레인 영역(26)이 감싸도록 형성되고, 기판상에 게이트 산화막(23) 및 게이트(27)가 형성되는 고압용 반도체 장치에 있어서, 상기 저농도의 소오스, 드레인 영역(26)이 상기 고농도 소오스, 드레인 영역(29) 보다 불순물 농도가 낮고 저농도 소오스, 드레인 영역(26)보다는 불순물 농도가 낮은 제2도전형의 중간농도의 소오스, 드레인 영역(26)을 감싸도록 형성되어 전체적으로 3중 소오스, 드레인 구조를 갖는 것을 특징으로 하는 고압용 반도체 장치.A high concentration source and drain region 29 of the second conductivity type is formed on the first conductive semiconductor substrate 21 so as to surround the low concentration source and drain region 26 of the second conductivity type. In the high-pressure semiconductor device in which the oxide film 23 and the gate 27 are formed, the low concentration source and drain regions 26 have lower impurity concentrations than the high concentration source and drain regions 29 and the low concentration source and drain regions ( A semiconductor device for high voltage, characterized in that it is formed so as to surround the source and drain region 26 of the second conductivity type having a lower impurity concentration than that of 26) and has a triple source and drain structure as a whole. 제1항에 있어서, 저농도의 소오스, 드레인 영역(26)과 중간농도의 소오스, 드레인 영역(25)은 확산도가 다른 2가지 불순물을 2중으로 이온주입한 다음 드라이브인시켜 형성되는 것을 특징으로 하는 고압용 반도체 장치.2. The high pressure of claim 1, wherein the low concentration source, drain region 26 and the medium concentration source and drain region 25 are formed by ion implantation of two impurities having different degrees of diffusion into a double ion and then drive-in. Semiconductor device. 제2항에 있어서, 반도체 기판(21)이 P형인 경우는 이온주입되는 불순물은 인이온과 비소이온이고, 반도체 기판(21)이 N형인 경우는 이온주입되는 이온이 붕소이온과 이불화붕소인 것을 특징으로 하는 고압용 반도체장치.The ion implantation impurity is phosphorus ion and arsenic ion when the semiconductor substrate 21 is P type, and the ion implanted ions are boron ion and boron difluoride when the semiconductor substrate 21 is N type. A high voltage semiconductor device, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910001131A 1991-01-23 1991-01-23 Semiconductor device for high-voltage KR940004268B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910001131A KR940004268B1 (en) 1991-01-23 1991-01-23 Semiconductor device for high-voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910001131A KR940004268B1 (en) 1991-01-23 1991-01-23 Semiconductor device for high-voltage

Publications (2)

Publication Number Publication Date
KR920015640A true KR920015640A (en) 1992-08-27
KR940004268B1 KR940004268B1 (en) 1994-05-19

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ID=19310212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910001131A KR940004268B1 (en) 1991-01-23 1991-01-23 Semiconductor device for high-voltage

Country Status (1)

Country Link
KR (1) KR940004268B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7056797B2 (en) 2001-01-16 2006-06-06 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7056797B2 (en) 2001-01-16 2006-06-06 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
KR940004268B1 (en) 1994-05-19

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