KR920005396A - 이온센서용 기준전계효과 트랜지스터(refet) - Google Patents

이온센서용 기준전계효과 트랜지스터(refet) Download PDF

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Publication number
KR920005396A
KR920005396A KR1019900012886A KR900012886A KR920005396A KR 920005396 A KR920005396 A KR 920005396A KR 1019900012886 A KR1019900012886 A KR 1019900012886A KR 900012886 A KR900012886 A KR 900012886A KR 920005396 A KR920005396 A KR 920005396A
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KR
South Korea
Prior art keywords
refet
field effect
effect transistor
ion sensor
ion
Prior art date
Application number
KR1019900012886A
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English (en)
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KR930002578B1 (ko
Inventor
손병기
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손병기
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Publication date
Application filed by 손병기 filed Critical 손병기
Priority to KR1019900012886A priority Critical patent/KR930002578B1/ko
Publication of KR920005396A publication Critical patent/KR920005396A/ko
Application granted granted Critical
Publication of KR930002578B1 publication Critical patent/KR930002578B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

내용 없음

Description

이온센서용 기준전계효과 트랜지스터(REFET)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 PVC막 REFET의 단면도,
제2도는 본 발명의 REFET를 이용한 측정 시스템의 개략도.

Claims (2)

  1. 이온교환체를 포함하지 않는 PVC막을 ISFET의 게이트에 형성시킨 것을 특징으로 하는 이온 센서용 REFET.
  2. 제1항에 있어서, 상기 REFET에 형성된 PVC막이 지지체 역할을 하는 PVC와 가소제 및 전기저항 감소제로 된 것을 특징으로 하는 이온 센서용 REFET.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900012886A 1990-08-21 1990-08-21 이온센서용 기준전계효과 트랜지스터(refet) KR930002578B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900012886A KR930002578B1 (ko) 1990-08-21 1990-08-21 이온센서용 기준전계효과 트랜지스터(refet)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012886A KR930002578B1 (ko) 1990-08-21 1990-08-21 이온센서용 기준전계효과 트랜지스터(refet)

Publications (2)

Publication Number Publication Date
KR920005396A true KR920005396A (ko) 1992-03-28
KR930002578B1 KR930002578B1 (ko) 1993-04-03

Family

ID=19302571

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012886A KR930002578B1 (ko) 1990-08-21 1990-08-21 이온센서용 기준전계효과 트랜지스터(refet)

Country Status (1)

Country Link
KR (1) KR930002578B1 (ko)

Also Published As

Publication number Publication date
KR930002578B1 (ko) 1993-04-03

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