KR910013468A - Etching Method of Contact Site Using PSG Contact Mask - Google Patents

Etching Method of Contact Site Using PSG Contact Mask Download PDF

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Publication number
KR910013468A
KR910013468A KR1019890018822A KR890018822A KR910013468A KR 910013468 A KR910013468 A KR 910013468A KR 1019890018822 A KR1019890018822 A KR 1019890018822A KR 890018822 A KR890018822 A KR 890018822A KR 910013468 A KR910013468 A KR 910013468A
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KR
South Korea
Prior art keywords
psg
contact
contact mask
mask
etching method
Prior art date
Application number
KR1019890018822A
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Korean (ko)
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KR0156101B1 (en
Inventor
김석진
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019890018822A priority Critical patent/KR0156101B1/en
Publication of KR910013468A publication Critical patent/KR910013468A/en
Application granted granted Critical
Publication of KR0156101B1 publication Critical patent/KR0156101B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음.No content.

Description

PSG콘택트 마스크를 이용한 콘택트부위 식각방법Etching Method of Contact Site Using PSG Contact Mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명의 콘택트 식각을 위해 1차로 PSG콘택트 마스크를 이용한 감광제 제거후의 구성도,5 is a block diagram after removing a photoresist using a PSG contact mask primarily for etching the contacts of the present invention;

제6도는 본 발명의 PSG 콘택트 마스크를 이용한 PSG 부위의 식각 및 감광제 제거후의 구성도,6 is a block diagram of the PSG site using the PSG contact mask of the present invention after etching and photoresist removal;

제7도는 본 발명의 PSG부위 식각후 2차로 기존콘택트 마스크를 이용한 감광제 제거후의 구성도.7 is a configuration diagram after removing the photoresist using an existing contact mask as a secondary after etching the PSG region of the present invention.

Claims (1)

전면에 강장제(8)가 도포된 웨이퍼에 있어서, 기존 콘택트 마스크보다 측면으로 3μ 넓은 PSG 콘택트 마스크(11)를 이용하여 1차로 감광제(8)를 선택적으로 제거한 후 7 : 1 HF를 이용하여 PSG영역(7)만 0.2분동안 식각하고 감광제(8)를 제거하며 감광제 재 도포전 800℃에서 10분간 굽기공정을 실시한 후 2차로 기존 콘택트 마스크를 사용하여 콘택트 부위의 감광제(8)를 선택적으로 제거한 다음 베이스 옥사이드(9)를 식각함을 특징으로 하는 PSG 콘택트 마스크를 이용한 콘택트 부위 식각방법.In the wafer coated with the tonic agent 8 on the front side, the PSG region is first removed by selectively removing the photoresist 8 by using the PSG contact mask 11 that is 3 μ wider than the conventional contact mask. (7) after only 0.2 minutes of etching, removing the photosensitive agent (8) and baking for 10 minutes at 800 ℃ before the photoresist is re-coated secondly using a conventional contact mask to selectively remove the photoresist (8) of the contact area A method of etching a contact site using a PSG contact mask characterized by etching the base oxide (9). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890018822A 1989-12-18 1989-12-18 Patterning method of contact hole using psg contact mask KR0156101B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890018822A KR0156101B1 (en) 1989-12-18 1989-12-18 Patterning method of contact hole using psg contact mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890018822A KR0156101B1 (en) 1989-12-18 1989-12-18 Patterning method of contact hole using psg contact mask

Publications (2)

Publication Number Publication Date
KR910013468A true KR910013468A (en) 1991-08-08
KR0156101B1 KR0156101B1 (en) 1998-12-01

Family

ID=19293088

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018822A KR0156101B1 (en) 1989-12-18 1989-12-18 Patterning method of contact hole using psg contact mask

Country Status (1)

Country Link
KR (1) KR0156101B1 (en)

Also Published As

Publication number Publication date
KR0156101B1 (en) 1998-12-01

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