KR950003924A - How to remove photoresist scum - Google Patents

How to remove photoresist scum Download PDF

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Publication number
KR950003924A
KR950003924A KR1019930014364A KR930014364A KR950003924A KR 950003924 A KR950003924 A KR 950003924A KR 1019930014364 A KR1019930014364 A KR 1019930014364A KR 930014364 A KR930014364 A KR 930014364A KR 950003924 A KR950003924 A KR 950003924A
Authority
KR
South Korea
Prior art keywords
flat plate
scum
photoresist scum
wafer
remove photoresist
Prior art date
Application number
KR1019930014364A
Other languages
Korean (ko)
Inventor
김상권
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930014364A priority Critical patent/KR950003924A/en
Publication of KR950003924A publication Critical patent/KR950003924A/en

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Abstract

본 발명은 플랫트(4) 위에 놓여있는 웨이퍼상의 현상된 감광막을 제거하는 단계와, 상기 플랫트(4)상에 놓여있는 웨이퍼를 리프터(5)로 상승시켜 상기 플랫트(4)의 온도를 차단하여 잔류되어 있는 감광막 스컴을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 감광막 스컴 제거 방법에 관한것으로, 감광막 스컴을 제거하기 위하여 플랫트의 온도를 낮출 필요가 없고 이후의 웨이퍼에 대한 공정을 계속하기 위해 플랫트의 온도를 다시 환원시킬 필요가 없어 반도체 소자의 생산성을 향상시키는 효과가 있다.The present invention removes the developed photoresist film on the wafer lying on the flat plate 4 and raises the wafer on the flat plate 4 by the lifter 5 to increase the temperature of the flat plate 4. A method for removing a photoresist scum, the method comprising: removing the remaining photoresist scum by blocking the substrate. In order to avoid the need to reduce the temperature of the platform again, there is an effect of improving the productivity of the semiconductor device.

Description

감광막 스컴 제거 방법How to remove photoresist scum

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 싱글 스트립퍼의 챔버 내부를 간단히 도시한 단면도.1 is a simplified cross-sectional view of the interior of a chamber of a single stripper.

Claims (1)

플랫트(4) 위에 놓여있는 웨이퍼상의 현상된 감광막을 제거하는 단계와, 상기 플랫트(4)상에 놓여있는 웨이퍼를 리프터(5)로 상승시켜 상기 플랫트(4)의 온도를 차단하여 잔류되어 있는 감광막 스컴을 제거하는 단계를 포함하여 이루어지는 것을 특징으로 하는 감광막 스컴 제거 방법.Removing the developed photoresist film on the wafer lying on the flat plate 4, raising the wafer on the flat plate with the lifter 5 to block the temperature of the flat plate 4, And removing the photosensitive film scum, wherein the photosensitive film scum is removed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014364A 1993-07-27 1993-07-27 How to remove photoresist scum KR950003924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930014364A KR950003924A (en) 1993-07-27 1993-07-27 How to remove photoresist scum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930014364A KR950003924A (en) 1993-07-27 1993-07-27 How to remove photoresist scum

Publications (1)

Publication Number Publication Date
KR950003924A true KR950003924A (en) 1995-02-17

Family

ID=67143059

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930014364A KR950003924A (en) 1993-07-27 1993-07-27 How to remove photoresist scum

Country Status (1)

Country Link
KR (1) KR950003924A (en)

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