KR950009929A - Method of forming contact window of semiconductor device - Google Patents

Method of forming contact window of semiconductor device Download PDF

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Publication number
KR950009929A
KR950009929A KR1019930019532A KR930019532A KR950009929A KR 950009929 A KR950009929 A KR 950009929A KR 1019930019532 A KR1019930019532 A KR 1019930019532A KR 930019532 A KR930019532 A KR 930019532A KR 950009929 A KR950009929 A KR 950009929A
Authority
KR
South Korea
Prior art keywords
contact window
forming
semiconductor device
sog
mask
Prior art date
Application number
KR1019930019532A
Other languages
Korean (ko)
Inventor
황준
이현곤
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930019532A priority Critical patent/KR950009929A/en
Publication of KR950009929A publication Critical patent/KR950009929A/en

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Abstract

본 발명은 반도체 소자의 접촉창 형성방법에 있어서, 웨이퍼(1)상에 중착된 중착물(2) 상부에 접촉창 마스크(3)를 형성하는 단계, 상기 접촉창 마스크(3)가 형성된 웨이퍼 전체구조 상부에 SOG막(4)을 형성하는 단계, 상기 SOG막(4)을 전면 식각하여 상기 접촉창 마스크(3)의 측벽에 SOG 스페이서(4')를 형성하는 단계, 상기 증착물(2)을 식각하여 접촉창을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 접촉창 형성 방법에 관한 것으로, 접촉창 마스크의 측벽에 SOG 스페이서를 형성하므로써 식각되는 하부 중착물의 식각폭 즉, 접촉창의 폭을 줄여주어 미세한 접촉창을 형성하며, 해상력의 향상 및 설계상 요구되는 작은 크기의 접촉창을 형성할 수 있는 효과가 있다.The present invention provides a method for forming a contact window of a semiconductor device, the method comprising: forming a contact window mask 3 on an intermediate material 2 deposited on a wafer 1, and a whole wafer on which the contact window mask 3 is formed. Forming an SOG film 4 on the structure, etching the entire SOG film 4 to form SOG spacers 4 'on sidewalls of the contact window mask 3, and depositing the deposit 2 A method of forming a contact window of a semiconductor device, the method comprising: forming a contact window by etching, wherein the contact width of the lower intermediate material etched by forming the SOG spacer on the sidewall of the contact window mask, that is, the contact window It reduces the width to form a fine contact window, and has the effect of improving the resolution and forming a small contact window required by the design.

Description

반도체 소자의 접촉창 형성방법Method of forming contact window of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2a도 내지 제2e도는 본 발명에 따른 접촉창 형성 공정도.2a to 2e is a contact window forming process according to the present invention.

Claims (1)

반도체 소자의 접촉창 형성 방법에 있어서, 웨이퍼(1)상에 중착된 중착물(2) 상부에 접촉창 마스크(3)를 형성하는 단계, 상기 접촉창 마스크(3)가 형성된 웨이퍼 전체구조 상부에 SOG(spin on glass)막(4)을 형성하는 단계, 상기 SOG막(4)을 전면 식각하여 상기 접촉창 마스크(3)의 측벽에 SOG 스페이서(4')를 형성하는 단계, 상기 증착물(2)을 식각하여 접촉창을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 접촉창 형성 방법.A method of forming a contact window of a semiconductor device, the method comprising: forming a contact window mask 3 on an intermediate material 2 deposited on a wafer 1, and forming a contact window mask 3 on an entire wafer structure in which the contact window mask 3 is formed. Forming a spin on glass (SOG) film 4, etching the entire SOG film 4 to form a SOG spacer 4 'on the sidewall of the contact window mask 3, and depositing the deposit 2 Forming a contact window by etching). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930019532A 1993-09-23 1993-09-23 Method of forming contact window of semiconductor device KR950009929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930019532A KR950009929A (en) 1993-09-23 1993-09-23 Method of forming contact window of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930019532A KR950009929A (en) 1993-09-23 1993-09-23 Method of forming contact window of semiconductor device

Publications (1)

Publication Number Publication Date
KR950009929A true KR950009929A (en) 1995-04-26

Family

ID=66824004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930019532A KR950009929A (en) 1993-09-23 1993-09-23 Method of forming contact window of semiconductor device

Country Status (1)

Country Link
KR (1) KR950009929A (en)

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