KR910009585U - 내부 전압 발생회로 - Google Patents

내부 전압 발생회로

Info

Publication number
KR910009585U
KR910009585U KR2019890017104U KR890017104U KR910009585U KR 910009585 U KR910009585 U KR 910009585U KR 2019890017104 U KR2019890017104 U KR 2019890017104U KR 890017104 U KR890017104 U KR 890017104U KR 910009585 U KR910009585 U KR 910009585U
Authority
KR
South Korea
Prior art keywords
generation circuit
voltage generation
internal voltage
internal
circuit
Prior art date
Application number
KR2019890017104U
Other languages
English (en)
Other versions
KR950005462Y1 (ko
Inventor
안승한
Original Assignee
엘지일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지일렉트론 주식회사 filed Critical 엘지일렉트론 주식회사
Priority to KR2019890017104U priority Critical patent/KR950005462Y1/ko
Publication of KR910009585U publication Critical patent/KR910009585U/ko
Application granted granted Critical
Publication of KR950005462Y1 publication Critical patent/KR950005462Y1/ko

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
KR2019890017104U 1989-11-18 1989-11-18 내부 전압 발생회로 KR950005462Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019890017104U KR950005462Y1 (ko) 1989-11-18 1989-11-18 내부 전압 발생회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019890017104U KR950005462Y1 (ko) 1989-11-18 1989-11-18 내부 전압 발생회로

Publications (2)

Publication Number Publication Date
KR910009585U true KR910009585U (ko) 1991-06-29
KR950005462Y1 KR950005462Y1 (ko) 1995-07-10

Family

ID=19291999

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019890017104U KR950005462Y1 (ko) 1989-11-18 1989-11-18 내부 전압 발생회로

Country Status (1)

Country Link
KR (1) KR950005462Y1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471143B1 (ko) * 1997-12-31 2005-06-07 삼성전자주식회사 반도체 장치의 기준 전압 발생 회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471143B1 (ko) * 1997-12-31 2005-06-07 삼성전자주식회사 반도체 장치의 기준 전압 발생 회로

Also Published As

Publication number Publication date
KR950005462Y1 (ko) 1995-07-10

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Legal Events

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Payment date: 20040618

Year of fee payment: 10

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