KR910008180A - 실리콘 단결정의 제조장치 - Google Patents

실리콘 단결정의 제조장치 Download PDF

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Publication number
KR910008180A
KR910008180A KR1019900004177A KR900004177A KR910008180A KR 910008180 A KR910008180 A KR 910008180A KR 1019900004177 A KR1019900004177 A KR 1019900004177A KR 900004177 A KR900004177 A KR 900004177A KR 910008180 A KR910008180 A KR 910008180A
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KR
South Korea
Prior art keywords
single crystal
silicon single
silicon
raw material
crystal manufacturing
Prior art date
Application number
KR1019900004177A
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English (en)
Other versions
KR930005408B1 (ko
Inventor
야스미쓰 나까하마
겐지 아라끼
히로시 가미오
Original Assignee
야마시로 요시나리
닛뽕 고오깡 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1277094A external-priority patent/JPH0316989A/ja
Application filed by 야마시로 요시나리, 닛뽕 고오깡 가부시기가이샤 filed Critical 야마시로 요시나리
Publication of KR910008180A publication Critical patent/KR910008180A/ko
Application granted granted Critical
Publication of KR930005408B1 publication Critical patent/KR930005408B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음.

Description

실리콘 단결정의 제조장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예를 모식적으로 나타낸 종 단면도.
제2도는 그 I-I 단면도.
제3도는 분할부재의 실시예의 측면도.

Claims (3)

  1. 실리콘용액을 내장하는 자동회전형 석영도가니와 이 석영도가니를 측면으로부터 가열하는 전기저항 가열체와 동석용도가니 안에서 용융실리콘을 단결정육성부와 원료용해부로 분할하고 또한 용융액을 연통시키는 구멍을 지닌 석영제 분할부재와 상기한 원료용해부에 원료실리콘을 연속공급하는 원료공급수단등을 지닌 실리콘 단결정 제조장치에 있어서, 분할부재 및 분할부재의 바깥쪽의 원료용해부를 덮고, 또한 두께가 3mm 이하인 금속제 보온판을 설치한 것을 특징으로 하는 실리콘 단결정의 제조장치.
  2. 제1항에 있어서, 금속제 보온판에는 탄탈 또는 몰리브덴이 사용되고 있음을 특징으로 하는 실리콘 단결정의 제조장치.
  3. 제2항에 있어서, 금속제 보온판의 몸통부에 개구부를 지닌 것을 특징으로 하는 실리콘 단결정이 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900004177A 1989-10-26 1990-03-28 실리콘 단결정의 제조장치 KR930005408B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-277094 1989-10-26
JP277094 1989-10-26
JP1277094A JPH0316989A (ja) 1989-03-30 1989-10-26 シリコン単結晶の製造装置

Publications (2)

Publication Number Publication Date
KR910008180A true KR910008180A (ko) 1991-05-30
KR930005408B1 KR930005408B1 (ko) 1993-06-19

Family

ID=17578691

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900004177A KR930005408B1 (ko) 1989-10-26 1990-03-28 실리콘 단결정의 제조장치

Country Status (5)

Country Link
US (1) US5143704A (ko)
EP (1) EP0425065A1 (ko)
KR (1) KR930005408B1 (ko)
CN (1) CN1051207A (ko)
FI (1) FI901415A0 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312600A (en) * 1990-03-20 1994-05-17 Toshiba Ceramics Co. Silicon single crystal manufacturing apparatus
EP0494307A4 (en) * 1990-03-20 1992-10-14 Nkk Corporation Apparatus for making silicon single crystal
US5363795A (en) * 1991-09-04 1994-11-15 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
EP0530397A1 (en) * 1991-09-04 1993-03-10 Kawasaki Steel Corporation Czochralski crystal pulling process and an apparatus for carrying out the same
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
US6984263B2 (en) * 2001-11-01 2006-01-10 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
AU2003251288A1 (en) * 2002-03-21 2003-11-03 Berkshire Laboratories, Inc. Methods for controlling crystal growth, crystallization, structures and phases in materials and systems
US8652257B2 (en) 2010-02-22 2014-02-18 Lev George Eidelman Controlled gravity feeding czochralski apparatus with on the way melting raw material
US9376762B2 (en) * 2012-11-29 2016-06-28 Solaicx Weir for improved crystal growth in a continuous Czochralski process
US20140144371A1 (en) * 2012-11-29 2014-05-29 Solaicx, Inc. Heat Shield For Improved Continuous Czochralski Process
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
US10407797B2 (en) 2017-05-04 2019-09-10 Corner Start Limited Crystal pulling system and method including crucible and barrier
CN112210820A (zh) * 2020-09-10 2021-01-12 徐州鑫晶半导体科技有限公司 晶体生产工艺
CN112853477B (zh) * 2020-12-31 2022-06-10 宁夏申和新材料科技有限公司 降低单晶晶棒气孔率的直拉拉晶方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2245250A1 (de) * 1972-09-15 1974-03-21 Philips Patentverwaltung Vorrichtung zum ziehen von kristallen, vorzugsweise einkristallen aus der schmelze
DE2821481C2 (de) * 1978-05-17 1985-12-05 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6389488A (ja) * 1986-09-30 1988-04-20 Toshiba Corp 単結晶の製造方法
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置

Also Published As

Publication number Publication date
CN1051207A (zh) 1991-05-08
KR930005408B1 (ko) 1993-06-19
EP0425065A1 (en) 1991-05-02
FI901415A0 (fi) 1990-03-21
US5143704A (en) 1992-09-01

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