KR900017113A - 균일 박막의 제조방법 - Google Patents

균일 박막의 제조방법 Download PDF

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Publication number
KR900017113A
KR900017113A KR1019900005336A KR900005336A KR900017113A KR 900017113 A KR900017113 A KR 900017113A KR 1019900005336 A KR1019900005336 A KR 1019900005336A KR 900005336 A KR900005336 A KR 900005336A KR 900017113 A KR900017113 A KR 900017113A
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KR
South Korea
Prior art keywords
different
silicon
thin film
containing compound
same
Prior art date
Application number
KR1019900005336A
Other languages
English (en)
Inventor
푹스 하랄트
푼호프 디르크
리히트 울리케
쉬레프 볼프강
Original Assignee
방에르트, 바르츠
바스프 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 방에르트, 바르츠, 바스프 악티엔게젤샤프트 filed Critical 방에르트, 바르츠
Publication of KR900017113A publication Critical patent/KR900017113A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/20—Processes for applying liquids or other fluent materials performed by dipping substances to be applied floating on a fluid
    • B05D1/202—Langmuir Blodgett films (LB films)
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C08J7/0427—Coating with only one layer of a composition containing a polymer binder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers

Abstract

내용 없음

Description

균일 박막의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 플리실록산(1)의 압력에 대한 면적(mN/m대 A/분자율)을 나타낸 도표,
제2도는 시간에 따른 막두께의 변화(막두께(㎚)/분)을 나타낸 그래프.

Claims (5)

  1. 산소 플라즈마 에칭에 안정한 실리콘-함유 화할물을 랑그뮈어-불로젯트 기술 또는 자동-어셈블리 기술에 의해 기판위에 도포함으로 이루어짐을 특징으로 하는 기판위에 40A 내지 1㎛ 두께의 균일박막을 형성시키는 방법.
  2. 제1항에 있어서, 사용되는 실리콘-함유화합물이 4중량% 이상의 실리콘 함량을 갖는 플리실란 또는 플리실록산임을 특징으로 하는 방법.
  3. 제1 내지 2항중 어느 한 항에 있어서, 사용되는 실리콘-함유 화합물이 하기일반식(Ⅰ)의 그룹으로 이루어짐을 특징으로 하는 방법.
    상기 식에서, R', R'' 및 R'''는 동일 또는 상이하며, 각각은 1내지 4개의 탄소 원자로 이루어진 알킬 또는 6내지 10개의 탄소 원자로 이루어진 아릴이고, R1및 R4는 동일 또는 상이하며, 각각은 할로겐화된 또는 할로겐이 없는 알킬, 옥사알킬, 티아알킬, 아릴, 헤타릴 또는 알카릴이고, R2및 R5는 동일 또는 상이하며, 각각은 2가의 할로겐화된 또는 할로겐이 없는 알킬렌, 옥사알킬렌, 티아알킬렌, 아릴렌, 헤타릴렌 또는 알카릴렌이고, R3및 R6는 동일 또는 상이하며, 각각은 OH, COOH, CN, NH2, SH, COSH, CSOH, CSSH, SO3H, SO3 COOCONH2, CSNH2또는 NO2, 그렇지 않고 만약 R3및 R6가 상이하면 R3및 R6중 하나는 또한 H일 수 있고, x 및 y는 동일 또는 상이하며, 만약 R6≠H라면 x는 0 내지 1000이고, 만약R6=H 및 R3≠H 라면x는 5 내지 1000이며, 만약R3≠H라면 y는 0내지 1000이고, 만약R3=H 및 R6≠H라면 y는 5내지 1000이다.
  4. 제4항에 따라 제조된 40A 내지 1㎛ 두계인 실리콘-함유 화합물의 박막을 이용함으로 이루어지는 조사(ir-radiation)에 의해 박막을 구성함으로써 전자성분을 형성하는 방법.
  5. 제1항에 따른 제조방법에 의해 수득된 실리콘-함유 화합물로 이루어진 40A 내지 1㎛ 두께 박막을 미세석판 인쇄에 사용하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900005336A 1989-04-17 1990-04-17 균일 박막의 제조방법 KR900017113A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE39125335 1989-04-17
DE3912533A DE3912533A1 (de) 1989-04-17 1989-04-17 Verfahren zur herstellung von gleichmaessigen duennen schichten

Publications (1)

Publication Number Publication Date
KR900017113A true KR900017113A (ko) 1990-11-15

Family

ID=6378824

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005336A KR900017113A (ko) 1989-04-17 1990-04-17 균일 박막의 제조방법

Country Status (7)

Country Link
EP (1) EP0393551A3 (ko)
JP (1) JPH02307572A (ko)
KR (1) KR900017113A (ko)
AU (1) AU5326090A (ko)
CA (1) CA2012086A1 (ko)
DE (1) DE3912533A1 (ko)
FI (1) FI901923A0 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0506425A3 (en) * 1991-03-26 1992-12-02 Kabushiki Kaisha Toshiba Polysilane monomolecular film and polysilane built-up film
DE69220717T2 (de) * 1991-04-30 1997-11-06 Matsushita Electric Ind Co Ltd Chemisch adsorbierte Schicht und Verfahren zu deren Herstellung
EP0799688B1 (en) * 1991-04-30 2002-10-02 Matsushita Electric Industrial Co., Ltd Hydrophilic chemically adsorbed film & method of manufacturing the same
WO1994021386A2 (en) * 1993-03-25 1994-09-29 Research Corporation Technologies, Inc. Polymers useful in forming self-assembled bonded anisotropic ultrathin layers and their use
DE4333107A1 (de) * 1993-09-29 1995-03-30 Bayer Ag Auf Trägern angebrachte ein- oder mehrlagige Schichtelemente und ihre Herstellung
US6632872B1 (en) 2000-09-19 2003-10-14 3M Innovative Properties Company Adhesive compositions including self-assembling molecules, adhesives, articles, and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4493714A (en) * 1982-05-06 1985-01-15 Teijin Limited Ultrathin film, process for production thereof, and use thereof for concentrating a specified gas in a gaseous mixture
EP0204963B1 (en) * 1985-05-10 1993-01-13 Hitachi, Ltd. Use of Alkali-Soluble Polyorganosilsesquioxane Polymers in a resist for preparing electronics parts.
US4822716A (en) * 1985-12-27 1989-04-18 Kabushiki Kaisha Toshiba Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
EP0244835B1 (en) * 1986-05-09 1992-08-26 Nippon Oil And Fats Company, Limited Langmuir-blodgett ultrathin membrane of polyfumurate

Also Published As

Publication number Publication date
EP0393551A2 (de) 1990-10-24
DE3912533A1 (de) 1990-10-18
CA2012086A1 (en) 1990-10-17
EP0393551A3 (de) 1991-11-27
AU5326090A (en) 1990-10-18
FI901923A0 (fi) 1990-04-17
JPH02307572A (ja) 1990-12-20

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