KR900011019A - 전송게이트 - Google Patents
전송게이트Info
- Publication number
- KR900011019A KR900011019A KR1019890018368A KR890018368A KR900011019A KR 900011019 A KR900011019 A KR 900011019A KR 1019890018368 A KR1019890018368 A KR 1019890018368A KR 890018368 A KR890018368 A KR 890018368A KR 900011019 A KR900011019 A KR 900011019A
- Authority
- KR
- South Korea
- Prior art keywords
- transmission gate
- gate
- transmission
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-317105 | 1988-12-15 | ||
| JP63317105A JPH07105447B2 (ja) | 1988-12-15 | 1988-12-15 | 伝送ゲート |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900011019A true KR900011019A (ko) | 1990-07-11 |
| KR930003557B1 KR930003557B1 (ko) | 1993-05-06 |
Family
ID=18084497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890018368A KR930003557B1 (ko) | 1988-12-15 | 1989-12-12 | 전송게이트 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5023688A (ko) |
| JP (1) | JPH07105447B2 (ko) |
| KR (1) | KR930003557B1 (ko) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0357410B1 (en) * | 1988-09-01 | 1993-11-03 | Fujitsu Limited | Semiconductor integrated circuit device |
| JP3017809B2 (ja) * | 1991-01-09 | 2000-03-13 | 株式会社東芝 | アナログ・デジタル混載半導体集積回路装置 |
| US5150186A (en) * | 1991-03-06 | 1992-09-22 | Micron Technology, Inc. | CMOS output pull-up driver |
| JP3242149B2 (ja) * | 1992-05-29 | 2001-12-25 | 富士通株式会社 | ダイナミック型分周回路 |
| EP0698966B1 (en) * | 1994-07-29 | 1998-10-07 | STMicroelectronics S.r.l. | MOS transistor switch without body effect |
| US5635745A (en) * | 1994-09-08 | 1997-06-03 | National Semiconductor Corporation | Analog multiplexer cell for mixed digital and analog signal inputs |
| JP3441236B2 (ja) * | 1995-04-24 | 2003-08-25 | ソニー株式会社 | 半導体集積回路装置 |
| US6448615B1 (en) | 1998-02-26 | 2002-09-10 | Micron Technology, Inc. | Methods, structures, and circuits for transistors with gate-to-body capacitive coupling |
| US6229342B1 (en) | 1998-03-30 | 2001-05-08 | Micron Technology, Inc. | Circuits and method for body contacted and backgated transistors |
| US6097065A (en) | 1998-03-30 | 2000-08-01 | Micron Technology, Inc. | Circuits and methods for dual-gated transistors |
| US6049496A (en) * | 1998-03-30 | 2000-04-11 | Micron Technology, Inc. | Circuit and method for low voltage, current sense amplifier |
| US6307235B1 (en) | 1998-03-30 | 2001-10-23 | Micron Technology, Inc. | Another technique for gated lateral bipolar transistors |
| US6075272A (en) * | 1998-03-30 | 2000-06-13 | Micron Technology, Inc. | Structure for gated lateral bipolar transistors |
| US6104066A (en) * | 1998-03-30 | 2000-08-15 | Micron Technology, Inc. | Circuit and method for low voltage, voltage sense amplifier |
| US6107663A (en) * | 1998-03-30 | 2000-08-22 | Micron Technology, Inc. | Circuit and method for gate-body structures in CMOS technology |
| US6163199A (en) * | 1999-01-29 | 2000-12-19 | Fairchild Semiconductor Corp. | Overvoltage/undervoltage tolerant transfer gate |
| JP3857462B2 (ja) * | 1999-03-19 | 2006-12-13 | 株式会社東芝 | 交流スイッチ回路 |
| US6492860B1 (en) * | 2000-07-26 | 2002-12-10 | Maxim Integrated Products, Inc. | Low voltage CMOS analog switch |
| EP1199801A1 (en) * | 2000-10-19 | 2002-04-24 | STMicroelectronics S.r.l. | Circuit for current injection control in analog switches |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US7796969B2 (en) | 2001-10-10 | 2010-09-14 | Peregrine Semiconductor Corporation | Symmetrically and asymmetrically stacked transistor group RF switch |
| CA2502467C (en) * | 2002-11-07 | 2012-07-03 | Xenics N.V. | Read-out circuit for infrared detectors |
| EP1774620B1 (en) | 2004-06-23 | 2014-10-01 | Peregrine Semiconductor Corporation | Integrated rf front end |
| US7619462B2 (en) | 2005-02-09 | 2009-11-17 | Peregrine Semiconductor Corporation | Unpowered switch and bleeder circuit |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20070063758A1 (en) * | 2005-09-22 | 2007-03-22 | Honeywell International Inc. | Voltage divider and method for minimizing higher than rated voltages |
| KR100817058B1 (ko) * | 2006-09-05 | 2008-03-27 | 삼성전자주식회사 | 룩업 테이블을 이용한 바디 바이어싱 제어회로 및 이의바디 바이어싱 제어방법 |
| JP2008123642A (ja) * | 2006-11-15 | 2008-05-29 | Samsung Electronics Co Ltd | 負電位モニターパッド制御回路及びそれを備えた不揮発性メモリ |
| TWI330922B (en) * | 2006-12-06 | 2010-09-21 | Princeton Technology Corp | Boost circuit and level shifter |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| US9143172B2 (en) | 2009-06-03 | 2015-09-22 | Qualcomm Incorporated | Tunable matching circuits for power amplifiers |
| US8963611B2 (en) | 2009-06-19 | 2015-02-24 | Qualcomm Incorporated | Power and impedance measurement circuits for a wireless communication device |
| US8750810B2 (en) | 2009-07-24 | 2014-06-10 | Qualcomm Incorporated | Power amplifier with switched output matching for multi-mode operation |
| US9559639B2 (en) | 2009-08-19 | 2017-01-31 | Qualcomm Incorporated | Protection circuit for power amplifier |
| US8072272B2 (en) * | 2009-08-19 | 2011-12-06 | Qualcomm, Incorporated | Digital tunable inter-stage matching circuit |
| WO2012143347A1 (de) | 2011-04-19 | 2012-10-26 | Elmos Semiconductor Ag | Schalteranordnung |
| US8829967B2 (en) | 2012-06-27 | 2014-09-09 | Triquint Semiconductor, Inc. | Body-contacted partially depleted silicon on insulator transistor |
| US8729952B2 (en) | 2012-08-16 | 2014-05-20 | Triquint Semiconductor, Inc. | Switching device with non-negative biasing |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US8847672B2 (en) | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| US8977217B1 (en) | 2013-02-20 | 2015-03-10 | Triquint Semiconductor, Inc. | Switching device with negative bias circuit |
| US8923782B1 (en) | 2013-02-20 | 2014-12-30 | Triquint Semiconductor, Inc. | Switching device with diode-biased field-effect transistor (FET) |
| US9203396B1 (en) | 2013-02-22 | 2015-12-01 | Triquint Semiconductor, Inc. | Radio frequency switch device with source-follower |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| US9379698B2 (en) | 2014-02-04 | 2016-06-28 | Triquint Semiconductor, Inc. | Field effect transistor switching circuit |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9659933B2 (en) * | 2015-04-27 | 2017-05-23 | Stmicroelectronics International N.V. | Body bias multiplexer for stress-free transmission of positive and negative supplies |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5894232A (ja) * | 1981-11-30 | 1983-06-04 | Toshiba Corp | 半導体アナログスイッチ回路 |
| JPS59186411A (ja) * | 1983-04-08 | 1984-10-23 | Hitachi Ltd | 可変利得増幅回路 |
| JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
-
1988
- 1988-12-15 JP JP63317105A patent/JPH07105447B2/ja not_active Expired - Fee Related
-
1989
- 1989-12-07 US US07/447,063 patent/US5023688A/en not_active Expired - Lifetime
- 1989-12-12 KR KR1019890018368A patent/KR930003557B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5023688A (en) | 1991-06-11 |
| JPH02161769A (ja) | 1990-06-21 |
| JPH07105447B2 (ja) | 1995-11-13 |
| KR930003557B1 (ko) | 1993-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030430 Year of fee payment: 11 |
|
| LAPS | Lapse due to unpaid annual fee |