KR900010468A - 방사 인쇄 매스크용 SiC 매스크지지체 제조방법 - Google Patents

방사 인쇄 매스크용 SiC 매스크지지체 제조방법 Download PDF

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Publication number
KR900010468A
KR900010468A KR1019890018148A KR890018148A KR900010468A KR 900010468 A KR900010468 A KR 900010468A KR 1019890018148 A KR1019890018148 A KR 1019890018148A KR 890018148 A KR890018148 A KR 890018148A KR 900010468 A KR900010468 A KR 900010468A
Authority
KR
South Korea
Prior art keywords
sic
sic layer
single crystal
silicon single
mask support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019890018148A
Other languages
English (en)
Korean (ko)
Inventor
하름스 마그렛
뤼쓰예 홀거
마티에센 베른트
Original Assignee
에브. 제이. 스미트
엔. 브이. 필립스 글로아이람 펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에브. 제이. 스미트, 엔. 브이. 필립스 글로아이람 펜파브리켄 filed Critical 에브. 제이. 스미트
Publication of KR900010468A publication Critical patent/KR900010468A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019890018148A 1988-12-08 1989-12-08 방사 인쇄 매스크용 SiC 매스크지지체 제조방법 Ceased KR900010468A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3841352A DE3841352A1 (de) 1988-12-08 1988-12-08 Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken
DE3841352.3 1988-12-08

Publications (1)

Publication Number Publication Date
KR900010468A true KR900010468A (ko) 1990-07-07

Family

ID=6368725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018148A Ceased KR900010468A (ko) 1988-12-08 1989-12-08 방사 인쇄 매스크용 SiC 매스크지지체 제조방법

Country Status (5)

Country Link
US (1) US4994141A (cg-RX-API-DMAC10.html)
EP (1) EP0372645B1 (cg-RX-API-DMAC10.html)
JP (1) JPH02213118A (cg-RX-API-DMAC10.html)
KR (1) KR900010468A (cg-RX-API-DMAC10.html)
DE (2) DE3841352A1 (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715880B2 (ja) * 1989-12-26 1995-02-22 信越化学工業株式会社 Ｘ線リソグラフィー用ＳｉＣ膜、その製造方法およびＸ線リソグラフィー用マスク
JPH0712017B2 (ja) * 1989-12-26 1995-02-08 信越化学工業株式会社 Ｘ線リソグラフィー用ＳｉＣ／Ｓｉ▲下３▼Ｎ▲下４▼膜の成膜方法
US5156784A (en) * 1991-10-09 1992-10-20 International Business Machines Corporation Method for fabricating a silicon carbide film to provide improved radiation hardness
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
US5888412A (en) * 1996-03-04 1999-03-30 Motorola, Inc. Method for making a sculptured diaphragm
US5824204A (en) * 1996-06-27 1998-10-20 Ic Sensors, Inc. Micromachined capillary electrophoresis device
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
JP2000206675A (ja) * 1999-01-12 2000-07-28 Nikon Corp 転写マスク用ブランクスおよび転写マスク
US6593209B2 (en) * 2001-11-15 2003-07-15 Kulite Semiconductor Products, Inc. Closing of micropipes in silicon carbide (SiC) using oxidized polysilicon techniques
KR100534485B1 (ko) * 2002-12-02 2005-12-26 주식회사 유니테스트 실란계 화합물을 이용한 표면 또는 몸체 미세가공 기술의점착 방지 방법
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
US20070298586A1 (en) * 2006-06-21 2007-12-27 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device
US8163632B2 (en) 2006-12-04 2012-04-24 Carl Zeiss Smt Gmbh Irradiation with high energy ions for surface structuring and treatment of surface proximal sections of optical elements
JP6248532B2 (ja) * 2013-10-17 2017-12-20 セイコーエプソン株式会社 ３Ｃ−ＳｉＣエピタキシャル層の製造方法、３Ｃ−ＳｉＣエピタキシャル基板および半導体装置
JP6753705B2 (ja) * 2016-06-10 2020-09-09 エア・ウォーター株式会社 基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100713B (en) * 1981-06-23 1985-04-24 Atomic Energy Authority Uk Modifying the mechanical properties of silicon carbide
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
DE3733311A1 (de) * 1987-10-02 1989-04-13 Philips Patentverwaltung Verfahren zur herstellung eines maskentraegers aus sic fuer roentgenstrahllithographie-masken

Also Published As

Publication number Publication date
EP0372645A3 (de) 1991-03-20
DE3841352A1 (de) 1990-06-21
DE58909366D1 (de) 1995-08-31
EP0372645B1 (de) 1995-07-26
JPH0557729B2 (cg-RX-API-DMAC10.html) 1993-08-24
EP0372645A2 (de) 1990-06-13
JPH02213118A (ja) 1990-08-24
US4994141A (en) 1991-02-19

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