KR900008626A - 반도체구조의 금속선 형성방법 - Google Patents

반도체구조의 금속선 형성방법

Info

Publication number
KR900008626A
KR900008626A KR1019890015420A KR890015420A KR900008626A KR 900008626 A KR900008626 A KR 900008626A KR 1019890015420 A KR1019890015420 A KR 1019890015420A KR 890015420 A KR890015420 A KR 890015420A KR 900008626 A KR900008626 A KR 900008626A
Authority
KR
South Korea
Prior art keywords
metal wire
semiconductor structure
forming metal
forming
semiconductor
Prior art date
Application number
KR1019890015420A
Other languages
English (en)
Other versions
KR0165664B1 (ko
Inventor
첸 푸센
이셩 린
리우 후타이
Original Assignee
에스지에스-톰슨 마이크로 일렉트로닉스 인코퍼레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스지에스-톰슨 마이크로 일렉트로닉스 인코퍼레이티드 filed Critical 에스지에스-톰슨 마이크로 일렉트로닉스 인코퍼레이티드
Publication of KR900008626A publication Critical patent/KR900008626A/ko
Application granted granted Critical
Publication of KR0165664B1 publication Critical patent/KR0165664B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/138—Roughened surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1019890015420A 1988-11-03 1989-10-26 반도체구조의 금속선 형성방법 KR0165664B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/266,796 US4933304A (en) 1988-11-03 1988-11-03 Method for reducing the surface reflectance of a metal layer during semiconductor processing
US266,796 1988-11-03

Publications (2)

Publication Number Publication Date
KR900008626A true KR900008626A (ko) 1990-06-03
KR0165664B1 KR0165664B1 (ko) 1999-02-01

Family

ID=23016030

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015420A KR0165664B1 (ko) 1988-11-03 1989-10-26 반도체구조의 금속선 형성방법

Country Status (5)

Country Link
US (1) US4933304A (ko)
EP (1) EP0367511B1 (ko)
JP (1) JP2753637B2 (ko)
KR (1) KR0165664B1 (ko)
DE (1) DE68927628T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196918A (en) * 1989-08-28 1993-03-23 Sumitomo Electric Industries, Ltd. Integrated circuit device and method for manufacturing the same
US5139974A (en) * 1991-01-25 1992-08-18 Micron Technology, Inc. Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer
US5166093A (en) * 1991-07-31 1992-11-24 Micron Technology, Inc. Method to reduce the reflectivity of a semi-conductor metallic surface
US5888908A (en) * 1992-04-30 1999-03-30 Stmicroelectronics, Inc. Method for reducing reflectivity of a metal layer
KR950007478B1 (ko) * 1992-06-17 1995-07-11 금성일렉트론주식회사 메탈 마스크 공정시 광반사 감소방법
US5480748A (en) * 1992-10-21 1996-01-02 International Business Machines Corporation Protection of aluminum metallization against chemical attack during photoresist development
US5312780A (en) * 1992-12-16 1994-05-17 At&T Bell Laboratories Integrated circuit fabrication method
US5604157A (en) * 1995-05-25 1997-02-18 Industrial Technology Research Institute Reduced notching of polycide gates using silicon anti reflection layer
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
US5841179A (en) * 1996-08-28 1998-11-24 Advanced Micro Devices, Inc. Conductive layer with anti-reflective surface portion
TW313701B (en) * 1996-10-23 1997-08-21 United Microelectronics Corp Manufacturing method of polysilicon conductive line
KR100436131B1 (ko) * 1996-12-20 2004-08-25 주식회사 하이닉스반도체 반도체소자의미세패턴형성방법
SG80582A1 (en) * 1997-03-20 2001-05-22 Chartered Semiconductor Mfg Use of an insulator spacer on the sidewalls of a via hole
US6187667B1 (en) * 1998-06-17 2001-02-13 Cypress Semiconductor Corp. Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit
US6476623B1 (en) * 2000-09-21 2002-11-05 Motorola, Inc. Percent backsputtering as a control parameter for metallization

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769735A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Forming method for contact
JPS596540A (ja) * 1982-07-05 1984-01-13 Toshiba Corp 半導体装置の製造方法
JPS59103794A (ja) * 1982-12-06 1984-06-15 Nippon Seihaku Kk 平版印刷版用複合体材料の製造法
JPS6042200A (ja) * 1983-08-15 1985-03-06 日本電気株式会社 周回衛星による地上観測方式
JPS6115330A (ja) * 1984-07-02 1986-01-23 Oki Electric Ind Co Ltd 半導体素子の製造方法
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
US4681795A (en) * 1985-06-24 1987-07-21 The United States Of America As Represented By The Department Of Energy Planarization of metal films for multilevel interconnects
US4839010A (en) * 1985-08-30 1989-06-13 Texas Instruments Incorporated Forming an antireflective coating for VLSI metallization
US4820611A (en) * 1987-04-24 1989-04-11 Advanced Micro Devices, Inc. Titanium nitride as an antireflection coating on highly reflective layers for photolithography

Also Published As

Publication number Publication date
DE68927628D1 (de) 1997-02-20
US4933304A (en) 1990-06-12
EP0367511B1 (en) 1997-01-08
JPH02178932A (ja) 1990-07-11
DE68927628T2 (de) 1997-05-28
EP0367511A3 (en) 1991-07-24
JP2753637B2 (ja) 1998-05-20
KR0165664B1 (ko) 1999-02-01
EP0367511A2 (en) 1990-05-09

Similar Documents

Publication Publication Date Title
SG46368A1 (en) Method of fabricating semiconductor structures
GB8813303D0 (en) Method of manufacturing semiconductor device
FI101314B1 (fi) Jatkuvan langan valmistusmenetelmä mekaanisen vetämisen avulla
GB8813738D0 (en) Semiconductor device & method of manufacturing same
KR930005944B1 (en) Manufacturing method of semiconductor device
KR850006258A (ko) 반도체장치 제조방법
KR860001495A (ko) 반도체장치 및 그 제조방법
KR860002862A (ko) 반도체장치의 제조방법
KR900008626A (ko) 반도체구조의 금속선 형성방법
EP0370775A3 (en) Method of manufacturing semiconductor device
EP0322889A3 (en) Manufacturing method of extra fine wire
KR860000710A (ko) 반도체장치 제조방법
KR860005437A (ko) 반도체장치의 제조방법
GB8801171D0 (en) Method of manufacturing semiconductor device
KR900009790A (ko) 모노-n-알킬화된 폴리아자마크로사이클의 제조방법
IT1233842B (it) Metodo di fabbricazione di profilati metallici alleggeriti
KR890004428A (ko) 수지밀폐형소자 및 그 제조방법
KR900007050A (ko) 반도체장치의 패턴형성방법
KR900015298A (ko) 와이어 본딩방법
GB2205684B (en) Improved method of fabricating semiconductor devices
NO169396C (no) Kobberbasert metallegering og fremstilling av denne
KR900013596A (ko) 화합물 반도체의 에칭 방법
EP0347470A4 (en) Method of forming superconducting wires
KR850006260A (ko) 상보형 반도체장치의 제조방법
KR890014199A (ko) 와이어 방전 가공 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010912

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee