KR900008151B1 - 다이리스터 - Google Patents

다이리스터 Download PDF

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Publication number
KR900008151B1
KR900008151B1 KR1019870012690A KR870012690A KR900008151B1 KR 900008151 B1 KR900008151 B1 KR 900008151B1 KR 1019870012690 A KR1019870012690 A KR 1019870012690A KR 870012690 A KR870012690 A KR 870012690A KR 900008151 B1 KR900008151 B1 KR 900008151B1
Authority
KR
South Korea
Prior art keywords
gto
thyristor
electrode
type semiconductor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870012690A
Other languages
English (en)
Korean (ko)
Other versions
KR880006784A (ko
Inventor
구니아키 고토
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR880006784A publication Critical patent/KR880006784A/ko
Application granted granted Critical
Publication of KR900008151B1 publication Critical patent/KR900008151B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/1302—GTO - Gate Turn-Off thyristor

Landscapes

  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
KR1019870012690A 1986-11-14 1987-11-11 다이리스터 Expired KR900008151B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61271211A JPS63124566A (ja) 1986-11-14 1986-11-14 サイリスタ
JP61-271211 1986-11-14
JP86-271211 1986-11-14

Publications (2)

Publication Number Publication Date
KR880006784A KR880006784A (ko) 1988-07-25
KR900008151B1 true KR900008151B1 (ko) 1990-11-03

Family

ID=17496894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012690A Expired KR900008151B1 (ko) 1986-11-14 1987-11-11 다이리스터

Country Status (2)

Country Link
JP (1) JPS63124566A (enExample)
KR (1) KR900008151B1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100452312B1 (ko) * 1997-05-13 2005-07-05 삼성전자주식회사 지티오(gto)를이용한메모리소자및그의제조방법

Also Published As

Publication number Publication date
JPH0478187B2 (enExample) 1992-12-10
KR880006784A (ko) 1988-07-25
JPS63124566A (ja) 1988-05-28

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