KR900003992A - Single Crystal Growth Method of Compound Semiconductor - Google Patents

Single Crystal Growth Method of Compound Semiconductor Download PDF

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Publication number
KR900003992A
KR900003992A KR1019880011229A KR880011229A KR900003992A KR 900003992 A KR900003992 A KR 900003992A KR 1019880011229 A KR1019880011229 A KR 1019880011229A KR 880011229 A KR880011229 A KR 880011229A KR 900003992 A KR900003992 A KR 900003992A
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KR
South Korea
Prior art keywords
single crystal
impurities
compound semiconductor
high concentration
amount
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KR1019880011229A
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Korean (ko)
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KR930007186B1 (en
Inventor
유학도
김한생
박주성
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한형수
삼성코닝 주식회사
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Priority to KR1019880011229A priority Critical patent/KR930007186B1/en
Publication of KR900003992A publication Critical patent/KR900003992A/en
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Publication of KR930007186B1 publication Critical patent/KR930007186B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음.No content.

Description

화합물 반도체의 단결성 성장방법Unity growth method of compound semiconductor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 방법에 의해 고농도의 불순물과, Ga, As가 함유된 초기 용액으로 부터 고농도의 불순물이 함유된 어깨부와 잉고트가 연속적으로 성장되는 것을 나타내는 도면.3 is a diagram showing that a high concentration of impurities and a shoulder and an ingot containing a high concentration of impurities are continuously grown from an initial solution containing Ga and As by the method according to the present invention.

Claims (2)

액체봉지 인상법(LEC)으로 화합물 반도체의 단결정을 성장시키는 방법에 있어서, 종자단결정(4)을 고농도의 불순물과 Ga, As가 함유된 초기융액(9)에 담근후 서서히 인상하여 고농도로 불순물이 함유된 어깨부(15)를 형성시킨 다음, GaAs 원료막대(14)를 초기융액의 잔존용액으로 내려 이를 용융시키므로써 불순물의 농도를 잉고트 도핑에 필요한 정도로 희석시켜서 결정을 성장시키는 것을 특징으로하는 저전위 밀도의 화합물 단결정을 성장시키는 방법.In the method of growing a single crystal of a compound semiconductor by the liquid encapsulation pulling method (LEC), the seed single crystal (4) is immersed in an initial melt (9) containing a high concentration of impurities and Ga, As, and then gradually raised to obtain impurities at a high concentration. After forming the shoulder portion 15, the GaAs raw material rod 14 is lowered into the remaining solution of the initial melt and melted, thereby diluting the concentration of impurities to the extent necessary for ingot doping to grow crystals. A method of growing a compound single crystal of dislocation density. 제1항에 있어서, 초기융액(9)에 함유된 불순물의 양은 잉고트를 원하는 수준으로 도핑하는데 필요한 불순물양과 종자단결정(4)부분부터 어깨부(15)까지 고농도로 도핑하는데 필요한 양의 합임을 특징으로 하는 방법.The method of claim 1, wherein the amount of impurities contained in the initial melt (9) is the sum of the amount of impurities necessary to dope the ingot to the desired level and the amount necessary to dope at a high concentration from the seed single crystal (4) to the shoulder portion (15). How to. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880011229A 1988-08-31 1988-08-31 Single crystal growning method of compound semiconductor meterial KR930007186B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880011229A KR930007186B1 (en) 1988-08-31 1988-08-31 Single crystal growning method of compound semiconductor meterial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880011229A KR930007186B1 (en) 1988-08-31 1988-08-31 Single crystal growning method of compound semiconductor meterial

Publications (2)

Publication Number Publication Date
KR900003992A true KR900003992A (en) 1990-03-27
KR930007186B1 KR930007186B1 (en) 1993-07-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011229A KR930007186B1 (en) 1988-08-31 1988-08-31 Single crystal growning method of compound semiconductor meterial

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KR (1) KR930007186B1 (en)

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Publication number Publication date
KR930007186B1 (en) 1993-07-31

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