KR900003424A - High dissociation pressure compound semiconductor single crystal growth method and device - Google Patents

High dissociation pressure compound semiconductor single crystal growth method and device Download PDF

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Publication number
KR900003424A
KR900003424A KR1019890010032A KR890010032A KR900003424A KR 900003424 A KR900003424 A KR 900003424A KR 1019890010032 A KR1019890010032 A KR 1019890010032A KR 890010032 A KR890010032 A KR 890010032A KR 900003424 A KR900003424 A KR 900003424A
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KR
South Korea
Prior art keywords
force bar
compound semiconductor
container
semiconductor single
single crystal
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KR1019890010032A
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Korean (ko)
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KR940009940B1 (en
Inventor
케이지 시로다
고오이찌 사사
켄지 도미자와
Original Assignee
나가노 다께시
미쓰비시 긴소꾸 가부시기가이샤
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Publication of KR900003424A publication Critical patent/KR900003424A/en
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Publication of KR940009940B1 publication Critical patent/KR940009940B1/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Abstract

내용 없음.No content.

Description

고해리압화합물반도체 단결정성장방법 및 그의 장치High dissociation pressure compound semiconductor single crystal growth method and device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 제 1 의 발명을 실시하기 위한 장치의 한 예를 표시하는 개략적인 단면도.1 is a schematic cross-sectional view showing an example of an apparatus for practicing the first invention.

제 2 도는 종래의 고해리압화합물반도체 단결정성장방법을 실시하기 위한 장치의 한예를 표시하는 개략적인 단면도이다.2 is a schematic cross-sectional view showing an example of an apparatus for performing a conventional high dissociation-pressure compound semiconductor single crystal growth method.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 외(外) 용기 2 : 밀봉용기1: outer container 2: sealed container

4 : 상축포오스바아 5 : 하축포오스바아4: upper shaft force bar 5: lower shaft force bar

6 : 서셉터(susceptor) 7 : 원료용액용기(도가니)6: susceptor 7: raw material solution container (crucible)

8,8' : 가열기구(히이터) 9 : 고해리압성분가스압제어로8,8 ': Heating mechanism (heater) 9: High dissociation pressure component gas pressure control furnace

11 : 상축아우터풀 튜우브 12 : 제 1 로우드셀11: upper shaft outer tube 12: first low-cell

16 : 원료용액 23 : 하축아우터풀 튜우브16 raw material solution 23 lower shaft outer tube

24 : 제 2 로우드셀24: second low cell

Claims (2)

가열밀봉용기(2)내에 밀봉된 고해리압성분가스의 압력을 제어하면서, 전기한 밀봉용기(2)내에서 화합물 반도체 단결정을 인상하는 쵸크랄스키법에 의한 화합물 반도체 단결정성장방법으로서, 전기한 단결정을 인상하는 상축포오스바아(4)에 부착된 제 1 로우드셀(12) 및 전기한 상축포오스바아(4)와 직경이 상이한 전기한 밀봉용기(2)내의 원료융액용기(7)을 지지하는 하축포오스바아(5)에 부착된 제 2 로우드셀(24)에 의하여, 육성된 고해리압화합물반도체 단결정의 중량을 측정하고, 이 측정중량으로부터 육성된 고해리압화합물반도체 단결정의 중량을 정확하게 산출하고, 육성된 화합물반도체 단결정의 형상을 제어하는 것을 특징으로 하는 고해리압화합물반도체 단결정성장방법.A compound semiconductor single crystal growth method by the Czochralski method which raises a compound semiconductor single crystal in the sealed container 2 while controlling the pressure of the high dissociation-pressure component gas sealed in the heat sealing container 2, The raw material melt container 7 in the first lower cell 12 attached to the upper shaft force bar 4 which pulls up the single crystal and the electrically sealed container 2 which is different in diameter from the upper upper axis force bar 4, which is electrically connected, The weight of the grown high dissociation compound semiconductor single crystal was measured by the second low cell 24 attached to the supporting lower shaft force bar 5, and the weight of the grown high dissociation compound semiconductor single crystal was A method of growing high dissociation-compound semiconductor single crystals, characterized in that it accurately calculates and controls the shape of the grown compound semiconductor single crystals. 외용기(1)와 이 외용기(1)내에 설치된 밀봉용기(2)와, 전기한 외용기(1) 및 밀봉용기의 윗쪽벽, 아랫쪽벽을 각각 상하동 또한, 회전가능하게 기밀하게 관통하여 밀봉용기 내부로 연장되어 설치된 상축포오스바아(4) 및 그 상축포오스바아(4)와 직경이 상이한 하축포오스바아(5)와, 전기한 밀봉용기(2)내에서 하축포오스바아(5)에 의하여 지지된 원료융액용기(7)와, 전기한 밀봉용기(2)를 가열가능하게 이 밀봉용기 바깥에 설치된 가열기구(8)(8')와, 전기한 밀봉용기(2)에 설치된 고해리압성분가스압 제어로(9)와, 전기한 상축포오스바아(4)에 접속된 제 1 로우드셀(12)와, 전기한 하축포오스바아(5)에 접속된 제 2 로우드셀(24)로서 이루어진 것을 특징으로 하는 고해리압화합물반도체 단결정성장장치.The outer container 1, the sealed container 2 installed in the outer container 1, and the upper and lower walls of the outer container 1 and the sealed container, respectively, which vertically and rotatably penetrate through the seal, are sealed. An upper shaft force bar 4 extending into the container, a lower shaft force bar 5 having a diameter different from that of the upper shaft force bar 4, and a lower shaft force bar 5 in the sealed container 2 described above. And a heating mechanism (8) (8 ') provided outside the sealing container so as to heat the raw material melt container (7) supported by the < Desc / Clms Page number 5 > The second dissociation cell connected to the high dissociation pressure component gas pressure control path 9, the first low cell force bar 12 connected to the upper shaft force bar 4, and the second lower cell force bar 5, which is connected to the lower axis force bar 5. A high dissociation-pressure compound semiconductor single crystal growth apparatus, characterized in that consisting of 24). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890010032A 1988-08-19 1989-07-14 Method for mono crystalline growth of dissociative compound semiconductors KR940009940B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP???63-?205861 1988-08-19
JP88-?205861? 1988-08-19
JP63205861A JPH0255289A (en) 1988-08-19 1988-08-19 Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor

Publications (2)

Publication Number Publication Date
KR900003424A true KR900003424A (en) 1990-03-26
KR940009940B1 KR940009940B1 (en) 1994-10-19

Family

ID=16513934

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Application Number Title Priority Date Filing Date
KR1019890010032A KR940009940B1 (en) 1988-08-19 1989-07-14 Method for mono crystalline growth of dissociative compound semiconductors

Country Status (2)

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JP (1) JPH0255289A (en)
KR (1) KR940009940B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004005409A1 (en) * 2002-07-03 2004-01-15 Ad-Tech Co., Ltd. Anti-corrosion paint for steel with polyaniline

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0255288A (en) * 1988-08-19 1990-02-23 Mitsubishi Metal Corp Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61205697A (en) * 1985-03-07 1986-09-11 Nec Corp Single crystal growth system for group iii-v compound semiconductor
JPH0639355B2 (en) * 1985-07-04 1994-05-25 日本電気株式会社 Method for producing compound semiconductor single crystal
JPS63176396A (en) * 1987-01-12 1988-07-20 Sumitomo Electric Ind Ltd Production of compound semiconductor single crystal and apparatus therefor
JPH0255288A (en) * 1988-08-19 1990-02-23 Mitsubishi Metal Corp Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004005409A1 (en) * 2002-07-03 2004-01-15 Ad-Tech Co., Ltd. Anti-corrosion paint for steel with polyaniline

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KR940009940B1 (en) 1994-10-19
JPH0255289A (en) 1990-02-23

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