JPS63176396A - Production of compound semiconductor single crystal and apparatus therefor - Google Patents
Production of compound semiconductor single crystal and apparatus thereforInfo
- Publication number
- JPS63176396A JPS63176396A JP329287A JP329287A JPS63176396A JP S63176396 A JPS63176396 A JP S63176396A JP 329287 A JP329287 A JP 329287A JP 329287 A JP329287 A JP 329287A JP S63176396 A JPS63176396 A JP S63176396A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- compound semiconductor
- semiconductor single
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 150000001875 compounds Chemical class 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000002994 raw material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000000155 melt Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 3
- -1 GaAs compound Chemical class 0.000 abstract description 2
- 239000008393 encapsulating agent Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000001308 synthesis method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は直接合成法による化合物半導体単結晶の製造方
法及び製造装置に関し、特に、原料の酸化物を減らし、
かつ蒸気圧の高い原料元素の飛散量を再現性よく設定範
囲に制御して、化合物半導体原料を合成し、しかも原料
融液の組成比の制御された高純度の化合物半導体単結晶
を得るのに適したものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method and apparatus for producing a compound semiconductor single crystal by a direct synthesis method, and particularly relates to a method and an apparatus for producing a compound semiconductor single crystal by a direct synthesis method, and in particular, by reducing the amount of oxides in the raw material,
In addition, the amount of scattering of raw material elements with high vapor pressure is controlled within a set range with good reproducibility to synthesize compound semiconductor raw materials, and to obtain high-purity compound semiconductor single crystals with a controlled composition ratio of raw material melt. It is suitable.
ＧａＡｌ１ ％ 工ｎＡｓなどのｍ−ｖ族化合物半導体
の製造方法として、ルツボ内に１族元素原料と■族元素
原料をチャージし、これを加熱することで直接、Ｉ−ｖ
族化合物半導体の原料融液を合成する、いわゆる直接合
成法がある。この方法は成長し九結晶が高純度であるこ
と、組成比制御が可能であること、あるいは低コストで
あることなどの理由から広〈実施されている。ここでこ
れらの■−■族化合物半導体のうちのＧａＡａ単結晶製
造を列にして述べる。As a manufacturing method for m-v group compound semiconductors such as GaAl1% E-nAs, group 1 element raw materials and group
There is a so-called direct synthesis method that synthesizes a raw material melt of a group compound semiconductor. This method is widely practiced because the nine crystals grown are of high purity, the composition ratio can be controlled, and the cost is low. Here, the production of GaAa single crystals of these ■-■ group compound semiconductors will be described in sequence.
この直接合成法においてはＧａ及びムｅがそれぞれ酸化
しやすいという性質のなめ、直接合成によりＧａＡｓ
融液とし九時に、融液表面上にそれらの酸化物などが
浮遊して融液表面に濁りが生じてしまう。このなめシー
ディングが回連となったり多結晶化しやすかったりある
いは電気特性などの結晶品質が悪くなるなど結晶成長に
悪形ｆ＃を及ぼすことが知られている。そこでこの酸化
物対策としてＧａ及びムＳの原料チャージ後にチャ／バ
ー容器内を真空状態に保ちながら、加熱して酸化物等を
除去する真空ベーキング法が実施されている。In this direct synthesis method, GaAs and Mue are easily oxidized.
When the melt is turned into a melt, these oxides and the like float on the surface of the melt, causing turbidity on the surface of the melt. It is known that this sloppy seeding causes adverse f# effects on crystal growth, such as formation of repeats, easy polycrystalization, and deterioration of crystal quality such as electrical properties. Therefore, as a countermeasure against this oxide, a vacuum baking method has been implemented in which after charging the raw materials of Ga and S, the inside of the chamber container is kept in a vacuum state and heated to remove the oxide and the like.
ところがこの真空ベーキング法においては昇温速度、到
達温度、継続時間などの条件の違いによってその酸化物
削減効果に差があり、ｔ＋酸化物を最も減少せしめる条
件を決定してもＡ３０９１篭散量が大きくばらつく現象
が生じてしまうことがあった。このため酸化物は減った
ものの、ＧａＡｓ の組成比がストイキオメトリ−から
大きくくずれてしまい、単結晶の歩留りが低下し、ま念
電気特性や熱安定性などの結晶品質も良いものができな
いという問題点があった。一方、ルツボを保持する回転
軸に重量センサーｆｔ魂付けてこの検出信号により結晶
重量を測定する機構を備えた単結晶製造装置では直接合
成後のＧａＡｓ単結晶成長の制御、特に形状制御などに
ついては重量センサーの検出信号では精度が悪く困難で
あるという問題点があった。However, in this vacuum baking method, the effect of reducing oxides varies depending on the conditions such as heating rate, temperature reached, duration, etc., and even if the conditions that reduce t+ oxides the most are determined, the amount of A3091 dispersion is still low. A phenomenon that varies greatly may occur. As a result, although the amount of oxides has been reduced, the composition ratio of GaAs deviates significantly from the stoichiometry, resulting in a decrease in the yield of single crystals and, unfortunately, making it impossible to produce crystals with good crystal quality such as electrical properties and thermal stability. There was a problem. On the other hand, in a single crystal manufacturing apparatus equipped with a mechanism for measuring the crystal weight using a detection signal from a weight sensor attached to the rotating shaft that holds the crucible, it is difficult to control the growth of GaAs single crystals after direct synthesis, especially shape control. There was a problem in that the detection signal of the weight sensor had poor accuracy and was difficult to detect.
本発明は上記の問題点を解消し、品質の良い単結晶を歩
留りよく製造することを可能とする製造方法及び製造装
置を提供しようとするものである。The present invention aims to solve the above-mentioned problems and provide a manufacturing method and manufacturing apparatus that make it possible to manufacture high-quality single crystals with a high yield.
本発明は、
（１）蒸気圧の高い元素を含んだ２種以上の元素からな
る化合物？直接会成し、まの後化合物半導体結晶を製造
する方法において、上記２１１以上の元素及び液体封止
剤をルツボに入れ、ルツボを、収容するチャンバ容器内
を真空にし、かつ、該ルツボを加熱してベーキングする
ために、ルツボを支持する下軸に付設する下部重量セン
サーにより、蒸気圧の高い元素の飛散量を検知して、ベ
ーキング条件を制御し、次いで加圧ガスをチャンバ容器
に導入し加熱して原料から化合物を直接合成した後該化
合物を溶融し、その融液より化合物半導体単結晶を引き
上げるために、引上軸に付設した上部重量センサーによ
り引上結晶の重量増加速度を検知して結晶成長条件を制
御することを特徴とする化合物半導体単結晶の製造方法
、（２）蒸気圧の高い元素を含んだ２種以上の元素から
々る化合物半導体単結晶を製造する装置において、結晶
の引上軸及びルツボを支持する下軸にそれぞれ重量セン
サーを付設し、上部重量センサーの検出信号を結晶成長
制御装置に入力し、下部重量センサーの検出信号を真空
ベーキング制御装置に入力することを特徴とする化合物
半導体単結晶を製造する装置である。The present invention is characterized by: (1) A compound consisting of two or more elements including an element with high vapor pressure? In a method for directly assembling and then manufacturing a compound semiconductor crystal, the above 211 or more elements and a liquid sealant are placed in a crucible, the chamber containing the crucible is evacuated, and the crucible is heated. In order to bake the crucible, a lower weight sensor attached to the lower shaft supporting the crucible detects the amount of scattered elements with high vapor pressure to control the baking conditions, and then pressurized gas is introduced into the chamber container. After directly synthesizing a compound from raw materials by heating, the compound is melted, and in order to pull a compound semiconductor single crystal from the melt, the weight increase rate of the pulled crystal is detected by a weight sensor attached to the upper part of the pulling shaft. (2) an apparatus for producing a compound semiconductor single crystal made from two or more elements including an element with high vapor pressure; A weight sensor is attached to each of the pulling shaft and the lower shaft supporting the crucible, and the detection signal from the upper weight sensor is input to the crystal growth control device, and the detection signal from the lower weight sensor is input to the vacuum baking control device. This is an apparatus for manufacturing compound semiconductor single crystals.
以下、本発明について図面を使用して詳細に説明する。 Hereinafter, the present invention will be explained in detail using the drawings.
ＧａＡｓ の直接合成法においては第１図に示したよう
に耐高圧チャンバ容器１内に保持され念ルツボ２に原料
Ｇａ ３及びム８４、さらに液体封止剤５（例えば、
ＥｘＯｓ）をチャージし、まず、チャンバ１内の不純物
ガス（大気）を除去するなめにチャンバ内を真空に引き
、真空状態（〜１０−” Ｔｏｒｒ ） を１〜数時
間保持する。次に前述のようにＧａ及びＡｓの酸化物等
を除去するためにチャンバ１内を真空状態に保っなまま
ヒーター６を用いてルツボ２を加熱、すなわち真空ベー
キングを行う。ここで酸化物等を十分に除去できるよう
に真空ベーキング？実施する熱環境及びベーキングを継
続する時間を設定してやらなければならない。ところが
適温状態にしたり、継続時間を長くし過ぎると、Ａｅ自
体が多量に昇華してしまうことになる。そこで本発明で
は、この真空ベーキング時にルツボ保持回転軸７（下軸
）に設けられ九下部重量センサー８によりルツボ重量を
検出し、その重量の減少分があらかじめ設定され７ｊＡ
ｓ 飛散量に達するまで真空ベーキングを行ない、重量
の減少量が設定値に達した時点で真空ベーキングを終了
し、あらかじめ設定され九圧力をチャンバ内に加える。In the direct synthesis method of GaAs, as shown in FIG.
First, the inside of the chamber is evacuated to remove impurity gas (atmosphere) in the chamber 1, and the vacuum state (~10-'' Torr) is maintained for 1 to several hours.Next, the above-mentioned In order to remove the oxides of Ga and As, etc., the crucible 2 is heated using the heater 6 while the inside of the chamber 1 is kept in a vacuum state, that is, vacuum baking is performed.At this point, the oxides, etc. can be sufficiently removed. Vacuum baking?The thermal environment to be carried out and the duration of baking must be set.However, if the temperature is set to an appropriate temperature or the duration is too long, a large amount of Ae itself will sublimate. In the present invention, during this vacuum baking, the weight of the crucible is detected by the lower weight sensor 8 provided on the crucible holding rotating shaft 7 (lower shaft), and the decrease in weight is set in advance.
s Vacuum baking is performed until the amount of scattering is reached, and when the amount of weight reduction reaches the set value, the vacuum baking is finished and a preset pressure is applied to the chamber.
従って本発明においては原料の酸化物等を最大限除去す
るとともに、最終的なムａ飛散量と予測することが可能
となる。Therefore, in the present invention, it is possible to remove the oxides and the like of the raw material to the maximum extent possible, and to predict the final amount of Mu scattering.
その後、高圧に保たれ九チャンバ容器内でＧａとＡ８の
直接合成を行い、生成し７ｊＧａＡｓ原料をヒーター６
で加熱して融液状態にし、第２図に示すようにＧａＡｓ
融液９よりＧａＡｓ化合物半導体単結晶１０を成長させ
る。その際、結晶の引上げ回転軸１１（上軸）に設は念
上部重量センサー１２により結晶１００重量を検出しこ
の検出信号を用いて結晶成長の制御、すなわち結晶形状
制御などを行う。本発明における化合物半導体単結晶製
造装置では上部重量センサー１２と下部重量センサー８
の検出信号は信号選択装置１３によって選択された信号
が結晶成長制御装置１４に送られ、ヒーター６、上１１
ｔ１１１及び下軸７の各々の駆動装置１５．１６を制御
して結晶成長の制御を行なうことができる。After that, Ga and A8 are directly synthesized in a nine-chamber container kept at high pressure, and the generated 7jGaAs raw material is transferred to a heater 6.
As shown in Figure 2, the GaAs
A GaAs compound semiconductor single crystal 10 is grown from the melt 9. At this time, the weight of the crystal 100 is detected by a top weight sensor 12 installed on the crystal pulling rotation axis 11 (upper axis), and this detection signal is used to control the crystal growth, that is, the crystal shape. In the compound semiconductor single crystal manufacturing apparatus according to the present invention, an upper weight sensor 12 and a lower weight sensor 8
The detection signal selected by the signal selection device 13 is sent to the crystal growth control device 14, and is sent to the heater 6 and the upper 11.
Crystal growth can be controlled by controlling the drive devices 15 and 16 for each of the t111 and the lower shaft 7.
第２図の装置を用いてＧａＡ３単結晶単結晶上製造内径
１５４■、深さ１４０ＩｌｌＩＩのｐＢＮ製ルツルツボ
ａ 原料２７６０ｆ％Ａｓ 原料５０００Ｆ、液体
封止剤としてＥ、Ｏ，Ａ６００ Ｆチャージして耐高圧
チャンバ容器内に設置した。まずチャンバ容器内の真空
引きを約１時間程度実施し九ところ到達真空度は１Ｘ
１０−” ＴＯｒｒ 程度であった。この真空引きを継
続しながら１０℃／！！ｌｉｎ 〜２ Ｑ Ｃ／ ＩＩ
Ｉ！ｉｎの昇温速度でヒーターの加熱（真空ベーキング
）を開始するとしばらく後に除々に真空度が悪化しＧａ
原料が融解し始めた。さらにベーキングを継続してい
くと下部重量センサーによって検出されるルツボ重量が
減少し、第３図に示すような変化を示した。あらかじめ
八〇 チャージ量の１３％、すなわち、約１０？重量
が減少し九時点で真空ベーキングが終了するように設定
し、ベーキング開始後約５０分経過したところで重量の
減少分が設定値に達した。この時点のヒーターの温度は
約５５０℃であった。その後Ａｒ、Ｎ２などの不活性ガ
スにより圧力を加えて６０〜７０ ｋｇ７ｃｍ２の高圧
下９００〜１０００℃でＧａとＡｓの直接合成反応によ
りＧａＡｓ多結晶原料を生成した。本実施例においてＧ
ａＡｓ原料を融解してＧａＡ３融液となった時には酸化
物等の浮遊物はほとんど存在せず融液の濁夛なども観察
されなかった。その後公知の方法であるＬＰ！（！法に
よりＧａＡｓ単結晶の引上げを実施した。ここで、結晶
成長においては上部電話センサーによる重量信号を用い
て直胴部の目標径を８５−として結晶形状自動制御を行
なったところ長さ約２２ｍ５重量的５７００ｉの結晶の
ＧａＡｓ単結晶が得られ、直胴部における結晶径は±１
．５ｗ以内の変動で抑えられてい念。A pBN crucible with an inner diameter of 154 cm and a depth of 140 IllII was produced using the equipment shown in Figure 2. Raw material: 2760 f%As, raw material: 5000 F, liquid sealant was charged with E, O, and A600 F to withstand high pressure. It was installed in a chamber container. First, the inside of the chamber was evacuated for about an hour, and the vacuum level reached at 9 was 1X.
It was about 10-” TOrr. While continuing this vacuuming, the temperature was 10°C/!!lin ~2 Q C/ II
I! When heating the heater (vacuum baking) is started at a temperature increase rate of in, the degree of vacuum gradually deteriorates after a while and the Ga
The raw material started to melt. As baking continued further, the weight of the crucible detected by the lower weight sensor decreased, showing changes as shown in FIG. 80 in advance 13% of the charge amount, about 10? The vacuum baking was set so that the weight decreased and the vacuum baking ended at the 9th point, and the weight reduction reached the set value about 50 minutes after the start of baking. The temperature of the heater at this point was approximately 550°C. Thereafter, pressure was applied using an inert gas such as Ar or N2, and a GaAs polycrystalline raw material was produced by a direct synthesis reaction of Ga and As at a high pressure of 60 to 70 kg7cm2 at 900 to 1000C. In this example, G
When the aAs raw material was melted to form a GaA3 melt, there were almost no floating substances such as oxides, and no turbidity was observed in the melt. After that, the known method LP! (A GaAs single crystal was pulled using the ! method. During crystal growth, the target diameter of the straight body part was set to 85 mm and the crystal shape was automatically controlled using the weight signal from the upper telephone sensor. A GaAs single crystal with a crystal size of 22 m5 and a weight of 5700 i was obtained, and the crystal diameter at the straight body was ±1.
．． Just make sure that the fluctuation is suppressed within 5W.
本実施例における最終的なＡＢ飛散量は約３４１であり
これによると初期融液組成比はＡｓ ／ （Ｇａ＋Ａｓ
） ＝ ［Ｌ５００とストイキオメトリ−を精度良く保
っていることが判明した。さらに結晶中の不純物濃度分
析によると、Ｓｉ、Ｓなど全て１０１４０−３以下であ
り、非常に高純度で高品質であることがわかつ念。The final AB scattering amount in this example is about 341, and according to this, the initial melt composition ratio is As / (Ga + As
) = [L500 and stoichiometry were found to be maintained accurately. Furthermore, an analysis of the impurity concentration in the crystal revealed that all of the crystals, including Si and S, were less than 10140-3, indicating extremely high purity and high quality.
本発明は上記構成を採用することにより、べ一キ／グ処
理を確実にし、原料の酸化物を減らし、かつ、蒸気圧の
高い原料元素の飛散量を最少限にして、化合物半導体原
料を合成することが可能となり、従って、高純度でしか
も原Ｒ＠液の組成比が精度良く制御された化合物半導体
単結晶ｔｇ造することができるという効果がある。By adopting the above configuration, the present invention ensures the consistency of the benchmarking process, reduces the amount of oxides in the raw materials, and minimizes the amount of scattering of raw material elements with high vapor pressure, thereby synthesizing compound semiconductor raw materials. Therefore, it is possible to produce a compound semiconductor single crystal tg with high purity and precisely controlled composition ratio of the raw R@ liquid.
４、面の簡単な説明
第１図は直接合成法による化合物半導体単結晶製造開始
の状態を示し次間、第２図は本発明による化合物半導体
単結晶の製造装置において化合物半導体単結晶成長中の
状態を示した図である。ここでは実施例としてＧａＡｓ
について示しである。さらに第３図は真空ベーキング
中の下部重量センサーによって検出されたルツボ重ユ変
化の１列を示したグラフである。4. Brief explanation of surfaces Figure 1 shows the state of starting compound semiconductor single crystal production by the direct synthesis method. It is a figure showing a state. Here, as an example, GaAs
This is an example of the following. Further, FIG. 3 is a graph showing a series of changes in crucible weight detected by the lower weight sensor during vacuum baking.
Claims (2)
る化合物を直接合成し、化合物半導体単結晶を製造する
方法において、上記２種以上の元素をルツボに入れ、ル
ツボを収容するチャンバ容器内を真空にした後、該ルツ
ボを加熱してベーキングするときに、ルツボを支持する
下軸に付設する下部重量センサーにより、蒸気圧の高い
元素の飛散量を検知してベーキング条件を制御し、次い
で加圧ガスをチャンバ容器に導入し、温度を上昇させて
原料から化合物を直接合成した後該化合物を溶融し、そ
の融液より化合物半導体単結晶を製造することを特徴と
する化合物半導体単結晶の製造方法。(1) In a method for directly synthesizing a compound consisting of two or more elements containing an element with high vapor pressure to produce a compound semiconductor single crystal, the two or more elements mentioned above are placed in a crucible, and a chamber containing the crucible is used. After creating a vacuum inside the container, when heating and baking the crucible, a lower weight sensor attached to the lower shaft that supports the crucible detects the amount of elements with high vapor pressure scattered and controls the baking conditions. Then, a pressurized gas is introduced into a chamber container, the temperature is raised, a compound is directly synthesized from the raw materials, the compound is melted, and a compound semiconductor single crystal is produced from the melt. Method of manufacturing crystals.
る化合物半導体単結晶の製造装置において、原料を収容
するルツボの支持軸に重量センサーを付設し、該センサ
ーの検出信号を真空ベーキング制御装置に入力すること
を特徴とする化合物半導体単結晶の製造装置。(2) In a manufacturing device for a compound semiconductor single crystal made of two or more elements including an element with high vapor pressure, a weight sensor is attached to the support shaft of the crucible that houses the raw materials, and the detection signal of the sensor is used for vacuum baking. A compound semiconductor single crystal manufacturing device characterized by inputting information to a control device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP329287A JPS63176396A (en) | 1987-01-12 | 1987-01-12 | Production of compound semiconductor single crystal and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP329287A JPS63176396A (en) | 1987-01-12 | 1987-01-12 | Production of compound semiconductor single crystal and apparatus therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63176396A true JPS63176396A (en) | 1988-07-20 |
Family
ID=11553313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP329287A Pending JPS63176396A (en) | 1987-01-12 | 1987-01-12 | Production of compound semiconductor single crystal and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63176396A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0255289A (en) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor |
| JPH0255288A (en) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor |
| JP2007001712A (en) * | 2005-06-23 | 2007-01-11 | Toshiba Elevator Co Ltd | Elevator control device and elevator operating method |
-
1987
- 1987-01-12 JP JP329287A patent/JPS63176396A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0255289A (en) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor |
| JPH0255288A (en) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | Method for growing high-dissociation pressure compound semiconductor single crystal and apparatus therefor |
| JP2007001712A (en) * | 2005-06-23 | 2007-01-11 | Toshiba Elevator Co Ltd | Elevator control device and elevator operating method |
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