KR900000562B1 - 반도체집적회로의 신호전송회로 - Google Patents
반도체집적회로의 신호전송회로 Download PDFInfo
- Publication number
- KR900000562B1 KR900000562B1 KR1019850008244A KR850008244A KR900000562B1 KR 900000562 B1 KR900000562 B1 KR 900000562B1 KR 1019850008244 A KR1019850008244 A KR 1019850008244A KR 850008244 A KR850008244 A KR 850008244A KR 900000562 B1 KR900000562 B1 KR 900000562B1
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- transmission line
- line
- input
- circuit
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-240208 | 1984-11-14 | ||
JP59240208A JPS61119060A (ja) | 1984-11-14 | 1984-11-14 | 半導体集積回路の信号伝送路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860004463A KR860004463A (ko) | 1986-06-23 |
KR900000562B1 true KR900000562B1 (ko) | 1990-01-31 |
Family
ID=17056058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008244A KR900000562B1 (ko) | 1984-11-14 | 1985-11-05 | 반도체집적회로의 신호전송회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4687949A (de) |
EP (1) | EP0181600B1 (de) |
JP (1) | JPS61119060A (de) |
KR (1) | KR900000562B1 (de) |
DE (1) | DE3581784D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63238713A (ja) * | 1987-03-26 | 1988-10-04 | Oki Electric Ind Co Ltd | 遅延回路 |
KR920005863B1 (ko) * | 1988-08-12 | 1992-07-23 | 산요덴끼 가부시끼가이샤 | 반도체 집적회로 |
DE3938459A1 (de) * | 1989-11-20 | 1991-05-23 | Philips Patentverwaltung | Schaltungsanordnung zur kompensation von impulslaengenveraenderungen |
DE4313053C1 (de) * | 1993-04-21 | 1994-10-06 | Siemens Ag | Integrierte Halbleiteranordnung mit Verbindungsleitungen, die durch Dotierungsgebiete gegenüber parasitären Effekten unempfindlich sind |
JP3283984B2 (ja) * | 1993-12-28 | 2002-05-20 | 株式会社東芝 | 半導体集積回路装置 |
US5994946A (en) * | 1996-10-31 | 1999-11-30 | Metaflow Technologies, Inc. | Alternating inverters for capacitive coupling reduction in transmission lines |
JP3164066B2 (ja) * | 1998-07-09 | 2001-05-08 | 日本電気株式会社 | 半導体装置 |
EP0977263A3 (de) | 1998-07-31 | 2002-07-10 | STMicroelectronics, Inc. | Anordnung und Verfahren zur Reduzierung der Laufzeit in einem Leiter |
US7109765B1 (en) * | 1998-11-03 | 2006-09-19 | Altera Corporation | Programmable phase shift circuitry |
DE102005038100A1 (de) * | 2005-08-10 | 2007-02-15 | Micronas Gmbh | Monolithische Anordnung, insbesondere integrierte Schaltung, mit einer floatenden Elektrode |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56161668A (en) * | 1980-05-16 | 1981-12-12 | Hitachi Ltd | Semiconductor device |
US4389429A (en) * | 1980-06-16 | 1983-06-21 | Rockwell International Corporation | Method of forming integrated circuit chip transmission line |
JPS57194552A (en) * | 1981-05-25 | 1982-11-30 | Matsushita Electric Ind Co Ltd | Signal transmission line |
-
1984
- 1984-11-14 JP JP59240208A patent/JPS61119060A/ja active Pending
-
1985
- 1985-11-05 US US06/795,256 patent/US4687949A/en not_active Expired - Lifetime
- 1985-11-05 KR KR1019850008244A patent/KR900000562B1/ko not_active IP Right Cessation
- 1985-11-06 EP EP85114100A patent/EP0181600B1/de not_active Expired - Lifetime
- 1985-11-06 DE DE8585114100T patent/DE3581784D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0181600A3 (en) | 1987-03-11 |
EP0181600B1 (de) | 1991-02-20 |
EP0181600A2 (de) | 1986-05-21 |
JPS61119060A (ja) | 1986-06-06 |
US4687949A (en) | 1987-08-18 |
DE3581784D1 (de) | 1991-03-28 |
KR860004463A (ko) | 1986-06-23 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 14 |
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LAPS | Lapse due to unpaid annual fee |