KR890016276A - 마그네트론 원리에 의한 분무 음극 - Google Patents
마그네트론 원리에 의한 분무 음극 Download PDFInfo
- Publication number
- KR890016276A KR890016276A KR1019890000531A KR890000531A KR890016276A KR 890016276 A KR890016276 A KR 890016276A KR 1019890000531 A KR1019890000531 A KR 1019890000531A KR 890000531 A KR890000531 A KR 890000531A KR 890016276 A KR890016276 A KR 890016276A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- spray
- magnetic
- plasma
- cathode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02B—INTERNAL-COMBUSTION PISTON ENGINES; COMBUSTION ENGINES IN GENERAL
- F02B33/00—Engines characterised by provision of pumps for charging or scavenging
- F02B33/02—Engines with reciprocating-piston pumps; Engines with crankcase pumps
- F02B33/24—Engines with reciprocating-piston pumps; Engines with crankcase pumps with crankcase pumps other than with reciprocating pistons only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- General Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 위치가 변경될 수 있는 자석단위가 설치된 본 발명의 분무음 극의 횡단면도. 제 2 도는 원반형의 기본 동체를 위에서 본 평면도. 제 3 도는 제 1 도에의 의한 본 발명의 분무음극의 위치가 바뀌어서 배치한 확대 횡단면도.
Claims (4)
- 최소한 하나의 부분으로 구성되는 타깃(11)과, 타깃(11)위에 설치된 자석시스템(13), 서로 얽혀 있으면서 패쇄되고, 서로 다른 극의 자석단위(14)(15)(16)를 가지고 있는 분무음극(1)으로서, 마찬가지로 패쇄되고 서로 얽혀 있는 자성을 띤 두개의 터널이 극을 통하여, 활모양으로 휘어진 자력선으로 형성되며, 이때 타깃(11)과 다른 방향으로 향한 자석단위(14)(15)(16)의 극들은 자석계철부재(17)(17a)(17b)에 서로 연결되고, 최소한 한 자장의 강도는 타깃(11)쪽에 있는 하나의 계철부재(17b)를 이동장치(21)위로 이동시킴으로써 다른 자장의 강도에 상대적으로 변하게 되며, 코오팅 과정에서 나타나는 플라즈마권(29) 가운데 최소한 하나에 설치되고 이 플라즈마권(29)의 광도를 요구하는 최소한 하나의 광학감지기(28)와 함께 작동하는 대전 접속회로로써 증폭기(32)와 계산기(37) 및 키이돌리기(34)위로 이동장치(21)가 접근할 수 있다는 것을 특징으로 하는, 마그네트론 원리에 의한 분무음극.
- 제 1 항에 있어서, 방사선상의외측 플라즈마권(29)이 광학감지기(28)위로 포착되고, 음극의 출력에 있어서 광학감지기(28)로부터 발생한 신호에 의하여 다른 플라즈마권(29)(30)중에 하나의 출력상태가 대전 접속회로인 증폭기(32)와 계산기(33) 및 키이돌리기(34)에 의하여 결정되며, 적당한 신호가, 서어보모우터(10)와 함께 작동하는 키이돌리기(34)로 이끌린다는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.
- 제 1 항과 제 2 항에 있어서, 서어보 모우터(10)의 회전자가 굴대(12)와 같이 작동하고, 국대(12)의 한쪽단부가, 자석단위(14)와 견고하게 연결된 내부의 계칠부재(17b)와 연결된다는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.
- 제 1 항과 제 2 항 및 제 3 항에 있어서, 굴대(12)에 의하여 연결된 내부의 계철부재(17b)가 자석단위(14)에 의하여 압력스프링(25)의 탄발력으로 이동될 수 있고 압력스프링(25)은 한편으로는 스테핑모우터(10)를 지니고 지면에 고정된 받침부(26)에 받쳐지고, 다른 편으로는 내부의 계철부재(17b)에 연결되어 받침부(26)의 공간부(27)속으로 들어간 정향장치(24)에 받쳐지는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3812379A DE3812379A1 (de) | 1988-04-14 | 1988-04-14 | Zerstaeubungskathode nach dem magnetron-prinzip |
DEP3812379.7 | 1988-04-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890016276A true KR890016276A (ko) | 1989-11-28 |
Family
ID=6351946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890000531A KR890016276A (ko) | 1988-04-14 | 1989-01-19 | 마그네트론 원리에 의한 분무 음극 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0337012B1 (ko) |
JP (1) | JPH0212747A (ko) |
KR (1) | KR890016276A (ko) |
DE (2) | DE3812379A1 (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4017111C2 (de) * | 1990-05-28 | 1998-01-29 | Hauzer Holding | Lichtbogen-Magnetron-Vorrichtung |
DE4022461A1 (de) * | 1990-07-14 | 1992-01-23 | Leybold Ag | Zerstaeubungskathode |
DE4100291C1 (ko) * | 1991-01-08 | 1991-10-02 | Leybold Ag, 6450 Hanau, De | |
DE4107711C2 (de) * | 1991-03-09 | 1999-11-11 | Leybold Ag | Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode |
DE4125110C2 (de) * | 1991-07-30 | 1999-09-09 | Leybold Ag | Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen |
DE4137483A1 (de) * | 1991-11-14 | 1993-05-19 | Leybold Ag | Kathode zum beschichten eines substrats |
US5482610A (en) * | 1991-11-14 | 1996-01-09 | Leybold Aktiengesellschaft | Cathode for coating a substrate |
DE4138029A1 (de) * | 1991-11-19 | 1993-05-27 | Thyssen Guss Ag | Targetkuehlung |
EP0549854B1 (de) * | 1991-12-28 | 1996-03-20 | Leybold Aktiengesellschaft | Kathode zum Beschichten eines Substrats |
US5314597A (en) * | 1992-03-20 | 1994-05-24 | Varian Associates, Inc. | Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile |
US5487822A (en) * | 1993-11-24 | 1996-01-30 | Applied Materials, Inc. | Integrated sputtering target assembly |
DE19543375A1 (de) * | 1995-11-21 | 1997-05-22 | Leybold Ag | Vorrichtung zum Beschichten von Substraten mittels Magnetronzerstäuben |
US5985115A (en) | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
DE19813075A1 (de) * | 1998-03-25 | 1999-09-30 | Leybold Ag | Vorrichtung zum Beschichten eines Substrates |
DE19836125C2 (de) * | 1998-08-10 | 2001-12-06 | Leybold Systems Gmbh | Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung |
US6264804B1 (en) | 2000-04-12 | 2001-07-24 | Ske Technology Corp. | System and method for handling and masking a substrate in a sputter deposition system |
DE102011115145A1 (de) * | 2011-09-27 | 2013-03-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Magnetronsputtern mit Ausgleich der Targeterosion |
CN105035760B (zh) * | 2015-08-31 | 2017-03-01 | 广州超音速自动化科技股份有限公司 | 磁控管校正机 |
KR102672094B1 (ko) * | 2018-09-27 | 2024-06-05 | 가부시키가이샤 알박 | 마그네트론 스퍼터링 장치용 자석 유닛 |
CN113276531B (zh) * | 2021-07-21 | 2021-09-21 | 南通德泰隆钢结构工程有限公司 | 一种彩钢瓦楞板正压覆膜装置及其使用方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4122351A (en) * | 1977-08-30 | 1978-10-24 | The United States Of America As Represented By The United States Department Of Energy | Automatic targeting of plasma spray gun |
DE2750421C2 (de) * | 1977-11-11 | 1986-09-25 | Leybold-Heraeus GmbH, 5000 Köln | Meßverfahren und Meßvorrichtungen für die Herstellung von Vielfach-Schichtsystemen |
DE3047113A1 (de) * | 1980-12-13 | 1982-07-29 | Leybold-Heraeus GmbH, 5000 Köln | Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate |
JPS5979528A (ja) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | ドライエツチング装置 |
DE3624150C2 (de) * | 1986-07-17 | 1994-02-24 | Leybold Ag | Zerstäubungskatode nach dem Magnetronprinzip |
-
1988
- 1988-04-14 DE DE3812379A patent/DE3812379A1/de not_active Withdrawn
- 1988-11-12 DE DE88118894T patent/DE3886923D1/de not_active Expired - Fee Related
- 1988-11-12 EP EP88118894A patent/EP0337012B1/de not_active Expired - Lifetime
-
1989
- 1989-01-19 KR KR1019890000531A patent/KR890016276A/ko not_active Application Discontinuation
- 1989-04-14 JP JP1093284A patent/JPH0212747A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0337012A3 (de) | 1991-01-16 |
EP0337012B1 (de) | 1994-01-05 |
JPH0212747A (ja) | 1990-01-17 |
EP0337012A2 (de) | 1989-10-18 |
DE3812379A1 (de) | 1989-10-26 |
DE3886923D1 (de) | 1994-02-17 |
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Legal Events
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E902 | Notification of reason for refusal | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |