KR890016276A - 마그네트론 원리에 의한 분무 음극 - Google Patents

마그네트론 원리에 의한 분무 음극 Download PDF

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Publication number
KR890016276A
KR890016276A KR1019890000531A KR890000531A KR890016276A KR 890016276 A KR890016276 A KR 890016276A KR 1019890000531 A KR1019890000531 A KR 1019890000531A KR 890000531 A KR890000531 A KR 890000531A KR 890016276 A KR890016276 A KR 890016276A
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KR
South Korea
Prior art keywords
target
spray
magnetic
plasma
cathode
Prior art date
Application number
KR1019890000531A
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English (en)
Inventor
마아쓰 볼프람
콜드 베른할드
페렌밧후 다그말
말텐스 토마스
뷜쯔 페텔
Original Assignee
베-데. 밧텐슈라그·에.에푸.투테
레이볼드 앗크티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 베-데. 밧텐슈라그·에.에푸.투테, 레이볼드 앗크티엔게젤샤프트 filed Critical 베-데. 밧텐슈라그·에.에푸.투테
Publication of KR890016276A publication Critical patent/KR890016276A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
    • F02B—INTERNAL-COMBUSTION PISTON ENGINES; COMBUSTION ENGINES IN GENERAL
    • F02B33/00—Engines characterised by provision of pumps for charging or scavenging
    • F02B33/02—Engines with reciprocating-piston pumps; Engines with crankcase pumps
    • F02B33/24—Engines with reciprocating-piston pumps; Engines with crankcase pumps with crankcase pumps other than with reciprocating pistons only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

내용 없음

Description

마그네트론 원리에 의한 분무 음극
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 위치가 변경될 수 있는 자석단위가 설치된 본 발명의 분무음 극의 횡단면도. 제 2 도는 원반형의 기본 동체를 위에서 본 평면도. 제 3 도는 제 1 도에의 의한 본 발명의 분무음극의 위치가 바뀌어서 배치한 확대 횡단면도.

Claims (4)

  1. 최소한 하나의 부분으로 구성되는 타깃(11)과, 타깃(11)위에 설치된 자석시스템(13), 서로 얽혀 있으면서 패쇄되고, 서로 다른 극의 자석단위(14)(15)(16)를 가지고 있는 분무음극(1)으로서, 마찬가지로 패쇄되고 서로 얽혀 있는 자성을 띤 두개의 터널이 극을 통하여, 활모양으로 휘어진 자력선으로 형성되며, 이때 타깃(11)과 다른 방향으로 향한 자석단위(14)(15)(16)의 극들은 자석계철부재(17)(17a)(17b)에 서로 연결되고, 최소한 한 자장의 강도는 타깃(11)쪽에 있는 하나의 계철부재(17b)를 이동장치(21)위로 이동시킴으로써 다른 자장의 강도에 상대적으로 변하게 되며, 코오팅 과정에서 나타나는 플라즈마권(29) 가운데 최소한 하나에 설치되고 이 플라즈마권(29)의 광도를 요구하는 최소한 하나의 광학감지기(28)와 함께 작동하는 대전 접속회로로써 증폭기(32)와 계산기(37) 및 키이돌리기(34)위로 이동장치(21)가 접근할 수 있다는 것을 특징으로 하는, 마그네트론 원리에 의한 분무음극.
  2. 제 1 항에 있어서, 방사선상의외측 플라즈마권(29)이 광학감지기(28)위로 포착되고, 음극의 출력에 있어서 광학감지기(28)로부터 발생한 신호에 의하여 다른 플라즈마권(29)(30)중에 하나의 출력상태가 대전 접속회로인 증폭기(32)와 계산기(33) 및 키이돌리기(34)에 의하여 결정되며, 적당한 신호가, 서어보모우터(10)와 함께 작동하는 키이돌리기(34)로 이끌린다는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.
  3. 제 1 항과 제 2 항에 있어서, 서어보 모우터(10)의 회전자가 굴대(12)와 같이 작동하고, 국대(12)의 한쪽단부가, 자석단위(14)와 견고하게 연결된 내부의 계칠부재(17b)와 연결된다는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.
  4. 제 1 항과 제 2 항 및 제 3 항에 있어서, 굴대(12)에 의하여 연결된 내부의 계철부재(17b)가 자석단위(14)에 의하여 압력스프링(25)의 탄발력으로 이동될 수 있고 압력스프링(25)은 한편으로는 스테핑모우터(10)를 지니고 지면에 고정된 받침부(26)에 받쳐지고, 다른 편으로는 내부의 계철부재(17b)에 연결되어 받침부(26)의 공간부(27)속으로 들어간 정향장치(24)에 받쳐지는 것을 특징으로 하는 마그네트론 원리에 의한 분무음극.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890000531A 1988-04-14 1989-01-19 마그네트론 원리에 의한 분무 음극 KR890016276A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3812379.7 1988-04-14
DE3812379A DE3812379A1 (de) 1988-04-14 1988-04-14 Zerstaeubungskathode nach dem magnetron-prinzip

Publications (1)

Publication Number Publication Date
KR890016276A true KR890016276A (ko) 1989-11-28

Family

ID=6351946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890000531A KR890016276A (ko) 1988-04-14 1989-01-19 마그네트론 원리에 의한 분무 음극

Country Status (4)

Country Link
EP (1) EP0337012B1 (ko)
JP (1) JPH0212747A (ko)
KR (1) KR890016276A (ko)
DE (2) DE3812379A1 (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4017111C2 (de) * 1990-05-28 1998-01-29 Hauzer Holding Lichtbogen-Magnetron-Vorrichtung
DE4022461A1 (de) * 1990-07-14 1992-01-23 Leybold Ag Zerstaeubungskathode
DE4100291C1 (ko) * 1991-01-08 1991-10-02 Leybold Ag, 6450 Hanau, De
DE4107711C2 (de) * 1991-03-09 1999-11-11 Leybold Ag Verfahren und Vorrichtung zur Abscheidung dotierter Schichten oder chemischer Verbindungen oder Legierungen mittels einer Magnetronkathode
DE4125110C2 (de) * 1991-07-30 1999-09-09 Leybold Ag Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
DE4137483A1 (de) * 1991-11-14 1993-05-19 Leybold Ag Kathode zum beschichten eines substrats
US5482610A (en) * 1991-11-14 1996-01-09 Leybold Aktiengesellschaft Cathode for coating a substrate
DE4138029A1 (de) * 1991-11-19 1993-05-27 Thyssen Guss Ag Targetkuehlung
ES2084886T3 (es) * 1991-12-28 1996-05-16 Leybold Ag Catodo para recubrir un substrato.
US5314597A (en) * 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
DE19543375A1 (de) * 1995-11-21 1997-05-22 Leybold Ag Vorrichtung zum Beschichten von Substraten mittels Magnetronzerstäuben
US5985115A (en) 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
DE19813075A1 (de) * 1998-03-25 1999-09-30 Leybold Ag Vorrichtung zum Beschichten eines Substrates
DE19836125C2 (de) * 1998-08-10 2001-12-06 Leybold Systems Gmbh Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
DE102011115145A1 (de) * 2011-09-27 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Magnetronsputtern mit Ausgleich der Targeterosion
CN105035760B (zh) * 2015-08-31 2017-03-01 广州超音速自动化科技股份有限公司 磁控管校正机
CN112739848B (zh) * 2018-09-27 2023-03-24 株式会社爱发科 磁控管溅射装置用磁铁单元
CN113276531B (zh) * 2021-07-21 2021-09-21 南通德泰隆钢结构工程有限公司 一种彩钢瓦楞板正压覆膜装置及其使用方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122351A (en) * 1977-08-30 1978-10-24 The United States Of America As Represented By The United States Department Of Energy Automatic targeting of plasma spray gun
DE2750421C2 (de) * 1977-11-11 1986-09-25 Leybold-Heraeus GmbH, 5000 Köln Meßverfahren und Meßvorrichtungen für die Herstellung von Vielfach-Schichtsystemen
DE3047113A1 (de) * 1980-12-13 1982-07-29 Leybold-Heraeus GmbH, 5000 Köln Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate
JPS5979528A (ja) * 1982-10-29 1984-05-08 Hitachi Ltd ドライエツチング装置
DE3624150C2 (de) * 1986-07-17 1994-02-24 Leybold Ag Zerstäubungskatode nach dem Magnetronprinzip

Also Published As

Publication number Publication date
DE3886923D1 (de) 1994-02-17
EP0337012B1 (de) 1994-01-05
EP0337012A3 (de) 1991-01-16
JPH0212747A (ja) 1990-01-17
DE3812379A1 (de) 1989-10-26
EP0337012A2 (de) 1989-10-18

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