KR890007395A - 방 진 막 - Google Patents
방 진 막 Download PDFInfo
- Publication number
- KR890007395A KR890007395A KR1019880013854A KR880013854A KR890007395A KR 890007395 A KR890007395 A KR 890007395A KR 1019880013854 A KR1019880013854 A KR 1019880013854A KR 880013854 A KR880013854 A KR 880013854A KR 890007395 A KR890007395 A KR 890007395A
- Authority
- KR
- South Korea
- Prior art keywords
- dustproof membrane
- film
- cellulose
- average molecular
- propionic acid
- Prior art date
Links
- 239000012528 membrane Substances 0.000 title claims 3
- 229920002678 cellulose Polymers 0.000 claims description 5
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims 4
- 239000004793 Polystyrene Substances 0.000 claims 2
- 239000001913 cellulose Substances 0.000 claims 2
- 229920002223 polystyrene Polymers 0.000 claims 2
- 235000019260 propionic acid Nutrition 0.000 claims 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
- Fluid-Damping Devices (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 셀루로오즈 에스텔 박막의 제조방법에 사용하는 장치의 사시도.
Claims (5)
- 폴리스틸렌 표준에 의한 중량 평균 분자량이 60,000-400,000의 프로피온산 셀루로오즈로 된 방진막.
- 막두께가 2.85μm인 청구의 범위 제1항 기재의 방진막.
- 셀루로오즈 에스텔류로 되고, 파장 365nm 및 436nm의 광의 투과율이 다 같이 98% 이상인 것을 특징으로 하고 있는 방진막.
- 상기 셀루로오즈 에스텔이 폴리스틸렌 표준에 의한 중량 평균 분자량이 60,000-400,000의 프로피온산 셀루로오즈인 것을 특징으로 하는 청구의 범위 제3항 기재의 방진막.
- 막두께가 1.45-1.48μm, 2.18-2.21μm, 2.92-2.95μm, 3.65-3.68μm, 4.39-4.41μm중 어느 범위에 속하는 것이 특징인 청구의 범위 제3항 기재의 방진막.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-269888 | 1987-10-26 | ||
JP?62-269888 | 1987-10-26 | ||
JP26988887A JPH0798869B2 (ja) | 1987-10-26 | 1987-10-26 | フォトマスク保護用防塵膜 |
JP62290882A JPH01133052A (ja) | 1987-11-18 | 1987-11-18 | 防塵膜 |
JP?62-290882 | 1987-11-18 | ||
JP62-290882 | 1987-11-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890007395A true KR890007395A (ko) | 1989-06-19 |
KR910009610B1 KR910009610B1 (ko) | 1991-11-23 |
Family
ID=26548963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880013854A KR910009610B1 (ko) | 1987-10-26 | 1988-10-24 | 방진막 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5028702A (ko) |
EP (1) | EP0314418B1 (ko) |
KR (1) | KR910009610B1 (ko) |
AT (1) | ATE171550T1 (ko) |
CA (1) | CA1330860C (ko) |
DE (1) | DE3856253T2 (ko) |
ES (1) | ES2124686T3 (ko) |
HK (1) | HK1003950A1 (ko) |
MY (1) | MY103629A (ko) |
SG (1) | SG47433A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5339197A (en) * | 1989-03-31 | 1994-08-16 | Yen Yung Tsai | Optical pellicle with controlled transmission peaking |
DE69327286T2 (de) * | 1992-09-24 | 2000-05-11 | Daicel Chem | Verfahren zur Herstellung eines Fettsäureesters von Cellulose |
US5741576A (en) * | 1995-09-06 | 1998-04-21 | Inko Industrial Corporation | Optical pellicle with controlled transmission peaks and anti-reflective coatings |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1119873A (en) * | 1976-10-22 | 1982-03-16 | Scott Paper Company | Diazo composition containing an azo coupling component precursor, a light sensitive acid progenitor and a carboxylic anhydride |
US4756007A (en) * | 1984-03-08 | 1988-07-05 | Codex Corporation | Adaptive communication rate modem |
GB2165545B (en) * | 1984-10-16 | 1988-03-30 | Du Pont | Pellicle structure for transmission of mid ultraviolet light |
JPS61130346A (ja) * | 1984-11-28 | 1986-06-18 | Daicel Chem Ind Ltd | 樹脂薄膜 |
JPS6235359A (ja) * | 1985-08-09 | 1987-02-16 | Daicel Chem Ind Ltd | コ−テツド薄膜の製造法 |
DE3750353T2 (de) * | 1986-06-12 | 1994-12-08 | Mitsui Petrochemical Ind | Verfahren zur Herstellung von Celluloseesterfolien. |
-
1988
- 1988-10-20 CA CA000580730A patent/CA1330860C/en not_active Expired - Fee Related
- 1988-10-22 MY MYPI88001207A patent/MY103629A/en unknown
- 1988-10-24 EP EP88309983A patent/EP0314418B1/en not_active Expired - Lifetime
- 1988-10-24 KR KR1019880013854A patent/KR910009610B1/ko not_active IP Right Cessation
- 1988-10-24 DE DE3856253T patent/DE3856253T2/de not_active Expired - Fee Related
- 1988-10-24 AT AT88309983T patent/ATE171550T1/de not_active IP Right Cessation
- 1988-10-24 SG SG1996001337A patent/SG47433A1/en unknown
- 1988-10-24 ES ES88309983T patent/ES2124686T3/es not_active Expired - Lifetime
- 1988-10-26 US US07/262,809 patent/US5028702A/en not_active Expired - Fee Related
-
1998
- 1998-04-17 HK HK98103210A patent/HK1003950A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3856253T2 (de) | 1999-04-08 |
ATE171550T1 (de) | 1998-10-15 |
US5028702A (en) | 1991-07-02 |
DE3856253D1 (de) | 1998-10-29 |
CA1330860C (en) | 1994-07-26 |
HK1003950A1 (en) | 1998-11-13 |
MY103629A (en) | 1993-08-28 |
ES2124686T3 (es) | 1999-02-16 |
KR910009610B1 (ko) | 1991-11-23 |
EP0314418B1 (en) | 1998-09-23 |
EP0314418A3 (en) | 1991-01-30 |
SG47433A1 (en) | 1998-04-17 |
EP0314418A2 (en) | 1989-05-03 |
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