KR890004547B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890004547B1
KR890004547B1 KR1019840003731A KR840003731A KR890004547B1 KR 890004547 B1 KR890004547 B1 KR 890004547B1 KR 1019840003731 A KR1019840003731 A KR 1019840003731A KR 840003731 A KR840003731 A KR 840003731A KR 890004547 B1 KR890004547 B1 KR 890004547B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
imide polymer
resin
molar ratio
hydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840003731A
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English (en)
Korean (ko)
Other versions
KR850000790A (ko
Inventor
후사지 쇼지
아기히로 겐노즈
이사오 오바라
히도시 요고네
다게시 고마루
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 히다찌세이사꾸쇼, 미쓰다 가쓰시게 filed Critical 가부시기가이샤 히다찌세이사꾸쇼
Publication of KR850000790A publication Critical patent/KR850000790A/ko
Application granted granted Critical
Publication of KR890004547B1 publication Critical patent/KR890004547B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
KR1019840003731A 1983-07-01 1984-06-29 반도체 장치 Expired KR890004547B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58-118140 1983-07-01
JP58118140A JPS6012744A (ja) 1983-07-01 1983-07-01 半導体装置

Publications (2)

Publication Number Publication Date
KR850000790A KR850000790A (ko) 1985-03-09
KR890004547B1 true KR890004547B1 (ko) 1989-11-13

Family

ID=14729052

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840003731A Expired KR890004547B1 (ko) 1983-07-01 1984-06-29 반도체 장치

Country Status (5)

Country Link
US (1) US4736012A (https=)
EP (1) EP0130571B1 (https=)
JP (1) JPS6012744A (https=)
KR (1) KR890004547B1 (https=)
DE (1) DE3474885D1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536841A (en) * 1976-07-09 1978-01-21 Matsushita Electric Industrial Co Ltd Battery
JPS60245150A (ja) * 1984-05-21 1985-12-04 Hitachi Ltd 半導体装置
JPH0680842B2 (ja) * 1986-06-27 1994-10-12 日東電工株式会社 光半導体装置
KR970007840B1 (ko) * 1987-06-26 1997-05-17 미다 가쓰시게 반도체 장치
JPH01110559A (ja) * 1987-10-23 1989-04-27 Hitachi Chem Co Ltd 半導体素子保護膜用組成物
US5260413A (en) * 1990-02-05 1993-11-09 E. I. Du Pont De Nemours And Company Coated, heat-sealable aromatic polyimide film having superior compressive strength
GB2279803B (en) * 1990-04-05 1995-05-24 Gen Electric A high density interconnect structure including a chamber
DE4115043A1 (de) * 1991-05-08 1997-07-17 Gen Electric Dichtgepackte Verbindungsstruktur, die eine Kammer enthält
US5153385A (en) * 1991-03-18 1992-10-06 Motorola, Inc. Transfer molded semiconductor package with improved adhesion
US5194930A (en) * 1991-09-16 1993-03-16 International Business Machines Dielectric composition and solder interconnection structure for its use
US5536584A (en) * 1992-01-31 1996-07-16 Hitachi, Ltd. Polyimide precursor, polyimide and metalization structure using said polyimide
US5659203A (en) * 1995-06-07 1997-08-19 International Business Machines Corporation Reworkable polymer chip encapsulant
KR100332666B1 (ko) * 1999-06-25 2002-04-17 홍영철 개별 착탈식 와이어 배선대
DE10229038B4 (de) * 2002-06-28 2013-08-14 Robert Bosch Gmbh Verkapptes Mikrostrukturbauelement mit Hochfrequenzdurchführung
US6956098B2 (en) 2002-09-20 2005-10-18 E. I. Du Pont De Nemours And Company High modulus polyimide compositions useful as dielectric substrates for electronics applications, and methods relating thereto
US7348210B2 (en) * 2005-04-27 2008-03-25 International Business Machines Corporation Post bump passivation for soft error protection
US8288177B2 (en) * 2010-08-17 2012-10-16 International Business Machines Corporation SER testing for an IC chip using hot underfill
TWM409527U (en) * 2011-02-23 2011-08-11 Azurewave Technologies Inc Forming integrated circuit module
CN115023475A (zh) * 2020-01-30 2022-09-06 富士胶片株式会社 α射线屏蔽膜形成用组合物、α射线屏蔽膜、层叠体、半导体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3632433A (en) * 1967-03-29 1972-01-04 Hitachi Ltd Method for producing a semiconductor device
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
DE2326314C2 (de) * 1973-05-23 1983-10-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Reliefstrukturen
JPS5421073B2 (https=) * 1974-04-15 1979-07-27
US4091407A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS5568659A (en) * 1978-11-20 1980-05-23 Hitachi Ltd Semiconductor device and manufacturing method thereof
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS5591145A (en) * 1978-12-28 1980-07-10 Narumi China Corp Production of ceramic package
EP0019391B1 (en) * 1979-05-12 1982-10-06 Fujitsu Limited Improvement in method of manufacturing electronic device having multilayer wiring structure
JPS6015152B2 (ja) * 1980-01-09 1985-04-17 株式会社日立製作所 樹脂封止半導体メモリ装置
JPS56118204A (en) * 1980-02-25 1981-09-17 Ube Industries Polyimide insulating member
JPS56130318A (en) * 1980-03-19 1981-10-13 Ube Ind Ltd Preparation of polyimide film
JPS5715819A (en) * 1980-07-01 1982-01-27 Ube Ind Ltd Gas separating material
JPS57181146A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
JPS57188853A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Plastic molded type semiconductor device

Also Published As

Publication number Publication date
JPH0131699B2 (https=) 1989-06-27
DE3474885D1 (en) 1988-12-01
US4736012A (en) 1988-04-05
EP0130571A3 (en) 1986-02-05
JPS6012744A (ja) 1985-01-23
EP0130571B1 (en) 1988-10-26
EP0130571A2 (en) 1985-01-09
KR850000790A (ko) 1985-03-09

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