KR880700452A - 실리콘에의 보론 도우핑 방법 - Google Patents

실리콘에의 보론 도우핑 방법

Info

Publication number
KR880700452A
KR880700452A KR1019860700659A KR860700659A KR880700452A KR 880700452 A KR880700452 A KR 880700452A KR 1019860700659 A KR1019860700659 A KR 1019860700659A KR 860700659 A KR860700659 A KR 860700659A KR 880700452 A KR880700452 A KR 880700452A
Authority
KR
South Korea
Prior art keywords
silicon
doping method
boron doping
boron
doping
Prior art date
Application number
KR1019860700659A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR880700452A publication Critical patent/KR880700452A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H01L21/2256—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides through the applied layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1019860700659A 1985-01-25 1986-09-24 실리콘에의 보론 도우핑 방법 KR880700452A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/694,806 US4604150A (en) 1985-01-25 1985-01-25 Controlled boron doping of silicon
PCT/US1985/002501 WO1986004454A1 (en) 1985-01-25 1985-12-16 Controlled boron doping of silicon

Publications (1)

Publication Number Publication Date
KR880700452A true KR880700452A (ko) 1988-03-15

Family

ID=24790354

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019860700659A KR940008018B1 (ko) 1985-01-25 1985-12-16 직접 회로 제조 방법
KR1019860700659A KR880700452A (ko) 1985-01-25 1986-09-24 실리콘에의 보론 도우핑 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019860700659A KR940008018B1 (ko) 1985-01-25 1985-12-16 직접 회로 제조 방법

Country Status (8)

Country Link
US (1) US4604150A (ko)
EP (1) EP0210190B1 (ko)
JP (1) JPS62501530A (ko)
KR (2) KR940008018B1 (ko)
CA (1) CA1286573C (ko)
DE (1) DE3583612D1 (ko)
ES (1) ES8704553A1 (ko)
WO (1) WO1986004454A1 (ko)

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JPS61202426A (ja) * 1985-03-05 1986-09-08 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4653177A (en) * 1985-07-25 1987-03-31 At&T Bell Laboratories Method of making and selectively doping isolation trenches utilized in CMOS devices
EP0220108A3 (en) * 1985-10-07 1990-04-11 Thomson Components-Mostek Corporation Side-wall doping for trench isolation
US4679300A (en) * 1985-10-07 1987-07-14 Thomson Components-Mostek Corp. Method of making a trench capacitor and dram memory cell
USRE35036E (en) * 1986-06-13 1995-09-12 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPH01287956A (ja) * 1987-07-10 1989-11-20 Toshiba Corp 半導体記憶装置およびその製造方法
US5851871A (en) * 1987-12-23 1998-12-22 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing integrated capacitors in MOS technology
JP2706469B2 (ja) * 1988-06-01 1998-01-28 松下電器産業株式会社 半導体装置の製造方法
US4963502A (en) * 1988-08-25 1990-10-16 Texas Instruments, Incorporated Method of making oxide-isolated source/drain transistor
IT1225625B (it) * 1988-11-03 1990-11-22 Sgs Thomson Microelectronics Procedimento per la realizzazione di strutture di isolamento incassate nel substrato di silicio per dispositivi cmos ed nmos.
US5084418A (en) * 1988-12-27 1992-01-28 Texas Instruments Incorporated Method of making an array device with buried interconnects
US5143859A (en) * 1989-01-18 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5264381A (en) * 1989-01-18 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
WO1990011616A1 (en) * 1989-03-21 1990-10-04 Grumman Aerospace Corporation Trench gate complimentary metal oxide semiconductor transistor
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor
EP0445471A3 (en) * 1990-03-06 1994-10-26 Digital Equipment Corp Method of forming isolation trenches in a semiconductor substrate
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
US5273934A (en) * 1991-06-19 1993-12-28 Siemens Aktiengesellschaft Method for producing a doped region in a substrate
EP0631306B1 (de) * 1993-06-23 2000-04-26 Siemens Aktiengesellschaft Verfahren zur Herstellung von einem Isolationsgraben in einem Substrat für Smart-Power-Technologien
EP0631305B1 (de) * 1993-06-23 1998-04-15 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
JPH0766424A (ja) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3396553B2 (ja) * 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
US5451809A (en) * 1994-09-07 1995-09-19 Kabushiki Kaisha Toshiba Smooth surface doped silicon film formation
JP3306258B2 (ja) * 1995-03-27 2002-07-24 三洋電機株式会社 半導体装置の製造方法
US5888876A (en) * 1996-04-09 1999-03-30 Kabushiki Kaisha Toshiba Deep trench filling method using silicon film deposition and silicon migration
TW304293B (en) * 1996-11-18 1997-05-01 United Microelectronics Corp Manufacturing method for shallow trench isolation
US6326293B1 (en) * 1997-12-19 2001-12-04 Texas Instruments Incorporated Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation
US6107153A (en) * 1998-01-26 2000-08-22 Texas Instruments -Acer Incorporated Method of forming a trench capacitor for a DRAM cell
TW379417B (en) * 1998-06-04 2000-01-11 United Semiconductor Corp Buried bitline structure and the manufacture method
DE19939589B4 (de) * 1999-08-20 2004-08-12 Infineon Technologies Ag Verfahren zur Herstellung eines Grabens mit vergrabener Platte
WO2003017336A2 (en) * 2001-08-13 2003-02-27 Amberwave Systems Corporation Dram trench capacitor and method of making the same
EP1868239B1 (en) * 2006-06-12 2020-04-22 ams AG Method of manufacturing trenches in a semiconductor body
US8507337B2 (en) 2008-07-06 2013-08-13 Imec Method for doping semiconductor structures and the semiconductor device thereof
KR101095802B1 (ko) * 2010-01-07 2011-12-21 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US8940388B2 (en) 2011-03-02 2015-01-27 Micron Technology, Inc. Insulative elements
CN102254801B (zh) * 2011-08-06 2013-06-19 深圳市稳先微电子有限公司 一种精确控制半导体器件掺杂区掺杂浓度的方法
CN115172518A (zh) * 2022-07-08 2022-10-11 酒泉正泰新能源科技有限公司 一种太阳能电池的多次氧化扩散方法、制备方法

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US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same
JPS501986A (ko) * 1973-05-09 1975-01-10
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
NL7710635A (nl) * 1977-09-29 1979-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4397075A (en) * 1980-07-03 1983-08-09 International Business Machines Corporation FET Memory cell structure and process
DE3129558A1 (de) * 1980-07-28 1982-03-18 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur herstellung einer integrierten halbleiterschaltung
US4356211A (en) * 1980-12-19 1982-10-26 International Business Machines Corporation Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon
US4407058A (en) * 1981-05-22 1983-10-04 International Business Machines Corporation Method of making dense vertical FET's
US4502202A (en) * 1983-06-17 1985-03-05 Texas Instruments Incorporated Method for fabricating overlaid device in stacked CMOS
US4502894A (en) * 1983-08-12 1985-03-05 Fairchild Camera & Instrument Corporation Method of fabricating polycrystalline silicon resistors in integrated circuit structures using outdiffusion
US4569850A (en) * 1983-11-23 1986-02-11 Auburn Research Foundation Method for thermally blasting outer coverings from food products
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
US4549914A (en) * 1984-04-09 1985-10-29 At&T Bell Laboratories Integrated circuit contact technique
US4534824A (en) * 1984-04-16 1985-08-13 Advanced Micro Devices, Inc. Process for forming isolation slots having immunity to surface inversion

Also Published As

Publication number Publication date
DE3583612D1 (de) 1991-08-29
ES551229A0 (es) 1987-04-16
US4604150A (en) 1986-08-05
EP0210190A1 (en) 1987-02-04
ES8704553A1 (es) 1987-04-16
JPS62501530A (ja) 1987-06-18
CA1286573C (en) 1991-07-23
EP0210190B1 (en) 1991-07-24
WO1986004454A1 (en) 1986-07-31
KR940008018B1 (ko) 1994-08-31

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