KR880011884A - 결정결함 평가용 부식액 - Google Patents

결정결함 평가용 부식액 Download PDF

Info

Publication number
KR880011884A
KR880011884A KR1019880002089A KR880002089A KR880011884A KR 880011884 A KR880011884 A KR 880011884A KR 1019880002089 A KR1019880002089 A KR 1019880002089A KR 880002089 A KR880002089 A KR 880002089A KR 880011884 A KR880011884 A KR 880011884A
Authority
KR
South Korea
Prior art keywords
corrosion solution
defect evaluation
crystal defect
solution
corrosion
Prior art date
Application number
KR1019880002089A
Other languages
English (en)
Other versions
KR910005738B1 (ko
Inventor
요시히코 사이토
요시아키 마츠시타
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880011884A publication Critical patent/KR880011884A/ko
Application granted granted Critical
Publication of KR910005738B1 publication Critical patent/KR910005738B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

결정결함 평가용 부식액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 부식액에 의한 부식후의 OSF 밀도와, Wright 부식에 의한 OSF 밀도의 대응관계를 나타낸 특성도,
제3도는 본 발명의 부식액에 의한 부식후의 BMD밀도와, Wright 부식에 의한 BMD 밀도와의 대응관계를 나타낸 특성도.

Claims (2)

  1. 실리콘 웨이퍼 결정결함을 평가하는 부식액에 있어서, 아세트산, 플루오르화수소, 질산, 질산구리 및 질산은이 함유되어 있는 것을 특징으로 하는 결함평가용 부식액.
  2. 제1항에 있어서, 부식액은 아세트산 250 내지 300ml, 플루오르화수소 20 내지 30ml, 질산 60 내지 120ml, 질산구리 0.1내지1.2g, 질산은 수용액 1 내지 5ml의 범위내에서 각 물질의 양이 임의로 함유되어진 것을 특징으로 하는 부식액.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880002089A 1987-03-04 1988-02-29 결정결함 평가용 부식액 KR910005738B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP49042 1987-03-04
JP62049042A JPS63215041A (ja) 1987-03-04 1987-03-04 結晶欠陥評価用エツチング液
JP62-49042 1987-03-04

Publications (2)

Publication Number Publication Date
KR880011884A true KR880011884A (ko) 1988-10-31
KR910005738B1 KR910005738B1 (ko) 1991-08-02

Family

ID=12820025

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002089A KR910005738B1 (ko) 1987-03-04 1988-02-29 결정결함 평가용 부식액

Country Status (5)

Country Link
US (1) US4787997A (ko)
EP (1) EP0281115B1 (ko)
JP (1) JPS63215041A (ko)
KR (1) KR910005738B1 (ko)
DE (1) DE3850686T2 (ko)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2716923B2 (ja) * 1993-03-26 1998-02-18 株式会社東芝 半導体基板表面吸着有機物の測定方法
JP3417515B2 (ja) * 1996-03-22 2003-06-16 信越半導体株式会社 シリコン単結晶基板の結晶欠陥評価方法
US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
MY127594A (en) 1997-04-09 2006-12-29 Memc Electronic Materials Low defect density, vacancy dominated silicon
US6600557B1 (en) * 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
GB2395059B (en) 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
GB0313402D0 (en) * 2003-06-11 2003-07-16 Shin Etsu Handotai Europ Ltd Semiconductor defect etch
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
TWI232236B (en) * 2003-10-13 2005-05-11 Nanya Technology Corp Etchant composition for SEM image enhancement of P-N junction contrast
GB0515480D0 (en) * 2005-07-28 2005-08-31 Shin Etsu Handotai Europ Ltd Product
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
GB0601318D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material
GB0601319D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd A method of fabricating pillars composed of silicon-based material
GB0709165D0 (en) 2007-05-11 2007-06-20 Nexeon Ltd A silicon anode for a rechargeable battery
GB0713896D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Method
GB0713895D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Production
GB0713898D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
TWI450052B (zh) 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
GB2464157B (en) 2008-10-10 2010-09-01 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material
GB2464158B (en) 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2470056B (en) 2009-05-07 2013-09-11 Nexeon Ltd A method of making silicon anode material for rechargeable cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
GB2470190B (en) 2009-05-11 2011-07-13 Nexeon Ltd A binder for lithium ion rechargeable battery cells
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
GB201005979D0 (en) 2010-04-09 2010-05-26 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB201009519D0 (en) 2010-06-07 2010-07-21 Nexeon Ltd An additive for lithium ion rechargeable battery cells
GB201014706D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Porous electroactive material
GB201014707D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Electroactive material
GB2492167C (en) 2011-06-24 2018-12-05 Nexeon Ltd Structured particles
JP2015510666A (ja) 2012-01-30 2015-04-09 ネクソン リミテッドＮｅｘｅｏｎ Ｌｉｍｉｔｅｄ Ｓｉ／Ｃ電気活性材料組成物
GB2499984B (en) 2012-02-28 2014-08-06 Nexeon Ltd Composite particles comprising a removable filler
GB2502625B (en) 2012-06-06 2015-07-29 Nexeon Ltd Method of forming silicon
KR101567203B1 (ko) 2014-04-09 2015-11-09 (주)오렌지파워 이차 전지용 음극 활물질 및 이의 방법
KR101604352B1 (ko) 2014-04-22 2016-03-18 (주)오렌지파워 음극 활물질 및 이를 포함하는 리튬 이차 전지
GB2533161C (en) 2014-12-12 2019-07-24 Nexeon Ltd Electrodes for metal-ion batteries
JP6545607B2 (ja) 2015-11-27 2019-07-17 東芝メモリ株式会社 エッチング方法
CN105651582B (zh) * 2015-12-30 2018-09-14 芜湖东旭光电装备技术有限公司 一种玻璃针状缺陷反射电镜样品的制作方法
CN110187061B (zh) * 2019-06-03 2022-03-25 西安奕斯伟材料科技有限公司 一种硅片的处理方法、检测方法及处理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3066053A (en) * 1960-02-01 1962-11-27 Sylvania Electric Prod Method for producing semiconductor devices
US3272748A (en) * 1964-06-29 1966-09-13 Western Electric Co Etching of silicon and germanium
SU471402A1 (ru) * 1973-03-02 1975-05-25 Предприятие П/Я Г-4671 Травильный раствор
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon

Also Published As

Publication number Publication date
EP0281115A3 (en) 1989-10-11
DE3850686T2 (de) 1994-12-15
JPS63215041A (ja) 1988-09-07
EP0281115B1 (en) 1994-07-20
KR910005738B1 (ko) 1991-08-02
JPH0416013B2 (ko) 1992-03-19
EP0281115A2 (en) 1988-09-07
US4787997A (en) 1988-11-29
DE3850686D1 (de) 1994-08-25

Similar Documents

Publication Publication Date Title
KR880011884A (ko) 결정결함 평가용 부식액
Gaylor et al. Polarographic oxidation of phenolic compounds
KR830010384A (ko) 항원 항체 반응의 측정 방법 및 그 시약
KR890015023A (ko) 암 진단용 수은-니켈 혼합시약(2)
Mancy et al. Effects of surface active agents on bubble aeration
Ramkumar et al. Mixture properties of the water+. gamma.-butyrolactone+ tetrahydrofuran system. Part 2. Viscosities and surface tensions of. gamma.-butyrolactone+ water at 303.15-343.15 K and. gamma.-butyrolactone+ tetrahydrofuran at 278.15-298.15 K
Rollie et al. Deoxygenation of solutions and its analytical applications
ATE29591T1 (de) Salzbrueckenfluessigkeit fuer die potentiometrische blutanalyse.
Kolthoff et al. A critical study of amperometric titration methods for sulfhydryl determination in native and denatured bovine serum albumin
Ashraf-Khorassani et al. A Tungsten Reference Electrode for Use in Corrosive Media—A Comparative Study with Other Reference Electrodes
KR840002258A (ko) 액체 크로마토 그래피용 겔의 재생방법
Swenson Effects of protein denaturants of the urea-guanidinium class on bulk water structure: An infrared study
Cardwell et al. Buffer systems for use with the fluoride electrode in flow-injection analysis
SU1538101A1 (ru) Раствор дл коррозионных испытаний медных сплавов на склонность к избирательной коррозии
Kolthoff et al. The ratio of the first to the second diffusion current of oxygen at the dropping mercury electrode. diffusion coefficient of oxygen
Venkatesulu et al. Excess volumes of 2-alkoxyethanols with trichloroethylene and tetrachloroethylene
US4724216A (en) Method for measuring calcium
US3375079A (en) Colorimetric reagent for analysis of nitrogen dioxide in air and method of use
Somer et al. Photoreduction of thionine by water
Daues et al. Determination of small amounts of acrylonitrile in aqueous industrial streams
KR840008329A (ko) 2-에틸-4-메틸이미다졸의 결정화 방지방법
TAKAHASHI et al. On Polarographic Behaviour of Indium Ion in Potassium Thiocyanate
Bernier A method for the rapid estimation of serum haptoglobin levels
SU924345A1 (ru) Состав для ликвидации карбонатных прихватов бурильного инструмента1
Foley et al. INTERDIFFUSION IN THALLIUM AMALGAMS

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030801

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee