DE3850686D1 - Ätzlösung zur Bewertung der Kristallfehler. - Google Patents

Ätzlösung zur Bewertung der Kristallfehler.

Info

Publication number
DE3850686D1
DE3850686D1 DE3850686T DE3850686T DE3850686D1 DE 3850686 D1 DE3850686 D1 DE 3850686D1 DE 3850686 T DE3850686 T DE 3850686T DE 3850686 T DE3850686 T DE 3850686T DE 3850686 D1 DE3850686 D1 DE 3850686D1
Authority
DE
Germany
Prior art keywords
evaluate
etching solution
crystal defects
defects
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3850686T
Other languages
English (en)
Other versions
DE3850686T2 (de
Inventor
Yoshihiko C O Patent Div Saito
Yoshiaki C O Patent Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3850686D1 publication Critical patent/DE3850686D1/de
Publication of DE3850686T2 publication Critical patent/DE3850686T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
DE3850686T 1987-03-04 1988-03-02 Ätzlösung zur Bewertung der Kristallfehler. Expired - Fee Related DE3850686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62049042A JPS63215041A (ja) 1987-03-04 1987-03-04 結晶欠陥評価用エツチング液

Publications (2)

Publication Number Publication Date
DE3850686D1 true DE3850686D1 (de) 1994-08-25
DE3850686T2 DE3850686T2 (de) 1994-12-15

Family

ID=12820025

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850686T Expired - Fee Related DE3850686T2 (de) 1987-03-04 1988-03-02 Ätzlösung zur Bewertung der Kristallfehler.

Country Status (5)

Country Link
US (1) US4787997A (de)
EP (1) EP0281115B1 (de)
JP (1) JPS63215041A (de)
KR (1) KR910005738B1 (de)
DE (1) DE3850686T2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
JPH06103714B2 (ja) * 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP2716923B2 (ja) * 1993-03-26 1998-02-18 株式会社東芝 半導体基板表面吸着有機物の測定方法
JP3417515B2 (ja) * 1996-03-22 2003-06-16 信越半導体株式会社 シリコン単結晶基板の結晶欠陥評価方法
US5843322A (en) * 1996-12-23 1998-12-01 Memc Electronic Materials, Inc. Process for etching N, P, N+ and P+ type slugs and wafers
CN1253610C (zh) 1997-04-09 2006-04-26 Memc电子材料有限公司 低缺陷密度、自间隙原子受控制的硅
US6600557B1 (en) 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
GB2395059B (en) 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
GB0313402D0 (en) * 2003-06-11 2003-07-16 Shin Etsu Handotai Europ Ltd Semiconductor defect etch
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
TWI232236B (en) * 2003-10-13 2005-05-11 Nanya Technology Corp Etchant composition for SEM image enhancement of P-N junction contrast
GB0515480D0 (en) * 2005-07-28 2005-08-31 Shin Etsu Handotai Europ Ltd Product
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
GB0601318D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd Method of etching a silicon-based material
GB0601319D0 (en) 2006-01-23 2006-03-01 Imp Innovations Ltd A method of fabricating pillars composed of silicon-based material
GB0709165D0 (en) 2007-05-11 2007-06-20 Nexeon Ltd A silicon anode for a rechargeable battery
GB0713895D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Production
GB0713898D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries
GB0713896D0 (en) 2007-07-17 2007-08-29 Nexeon Ltd Method
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
TWI450052B (zh) 2008-06-24 2014-08-21 Dynaloy Llc 用於後段製程操作有效之剝離溶液
GB2464157B (en) 2008-10-10 2010-09-01 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material
GB2464158B (en) * 2008-10-10 2011-04-20 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB2470056B (en) 2009-05-07 2013-09-11 Nexeon Ltd A method of making silicon anode material for rechargeable cells
GB2470190B (en) 2009-05-11 2011-07-13 Nexeon Ltd A binder for lithium ion rechargeable battery cells
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
GB201005979D0 (en) 2010-04-09 2010-05-26 Nexeon Ltd A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
GB201009519D0 (en) 2010-06-07 2010-07-21 Nexeon Ltd An additive for lithium ion rechargeable battery cells
GB201014707D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Electroactive material
GB201014706D0 (en) 2010-09-03 2010-10-20 Nexeon Ltd Porous electroactive material
GB2492167C (en) 2011-06-24 2018-12-05 Nexeon Ltd Structured particles
WO2013114094A1 (en) 2012-01-30 2013-08-08 Nexeon Limited Composition of si/c electro active material
GB2499984B (en) 2012-02-28 2014-08-06 Nexeon Ltd Composite particles comprising a removable filler
GB2502625B (en) 2012-06-06 2015-07-29 Nexeon Ltd Method of forming silicon
KR101567203B1 (ko) 2014-04-09 2015-11-09 (주)오렌지파워 이차 전지용 음극 활물질 및 이의 방법
KR101604352B1 (ko) 2014-04-22 2016-03-18 (주)오렌지파워 음극 활물질 및 이를 포함하는 리튬 이차 전지
GB2533161C (en) 2014-12-12 2019-07-24 Nexeon Ltd Electrodes for metal-ion batteries
JP6545607B2 (ja) 2015-11-27 2019-07-17 東芝メモリ株式会社 エッチング方法
CN105651582B (zh) * 2015-12-30 2018-09-14 芜湖东旭光电装备技术有限公司 一种玻璃针状缺陷反射电镜样品的制作方法
CN110187061B (zh) * 2019-06-03 2022-03-25 西安奕斯伟材料科技有限公司 一种硅片的处理方法、检测方法及处理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3066053A (en) * 1960-02-01 1962-11-27 Sylvania Electric Prod Method for producing semiconductor devices
US3272748A (en) * 1964-06-29 1966-09-13 Western Electric Co Etching of silicon and germanium
SU471402A1 (ru) * 1973-03-02 1975-05-25 Предприятие П/Я Г-4671 Травильный раствор
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon

Also Published As

Publication number Publication date
DE3850686T2 (de) 1994-12-15
KR880011884A (ko) 1988-10-31
EP0281115A2 (de) 1988-09-07
EP0281115B1 (de) 1994-07-20
EP0281115A3 (en) 1989-10-11
US4787997A (en) 1988-11-29
JPS63215041A (ja) 1988-09-07
KR910005738B1 (ko) 1991-08-02
JPH0416013B2 (de) 1992-03-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee