KR880011830A - 초전도 세라믹 물질 제조방법 - Google Patents
초전도 세라믹 물질 제조방법 Download PDFInfo
- Publication number
- KR880011830A KR880011830A KR1019880003087A KR880003087A KR880011830A KR 880011830 A KR880011830 A KR 880011830A KR 1019880003087 A KR1019880003087 A KR 1019880003087A KR 880003087 A KR880003087 A KR 880003087A KR 880011830 A KR880011830 A KR 880011830A
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- Prior art keywords
- mixture
- magnetic field
- ceramic material
- superconducting
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/727—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device using magnetic field
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/739—Molding, coating, shaping, or casting of superconducting material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/822—Shaping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
내용없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (19)
- 초전도 세라믹 물질 제조방법에 있어서, 자장을 인가하여 초전도 물질을 형성하는 단계를 구비하는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 형성단계가 요구된 초전도 세라믹물질로 된 분말 화학성분을 함께 혼합시키며 초전도 물질내에서 상기 혼합물을 강화시키는 단계를 구비하는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 혼합물이, 자장하에서 상기 형성단계중에 가열되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제3항에 있어서, 상기 혼합물이 100 내지 900℃에서 가열되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제3항에 있어서, 상기 혼합물은 자장하에서 가열될 때 압축되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 자장의 강도는 500 내지 10000가우스 보다 작지 않는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 자장은, 초전도 물질이 전기 전류 통과를 위해 요구될때와 동일한 방향으로 상기 혼합물에 인가되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 형성 단계는 상기 혼합물을 소형화시키며 상기 소형화된 혼합물을 가열시키는 단계를 구비하는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제3항에 있어서, 상기 형성 단계는 용제로 상기 혼합물을 용액으로 만들며, 상기 용액 혼합물을 표면에 인가하며 상기 표면상에서 상기 혼합물을 가열하는 단계를 구비하는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제8항에 있어서, 상기 혼합물을 최종 소형화 및 가열시키기 전에, 상기 혼합물을 예열시키며 예열된 혼합물을 미세한 분말로 가는 단계를 구비하는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제8항에 있어서, 상기 혼합물이, 상기 예열단계전에 타블렛형태로 압축되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제10항에 있어서, 상기 예열이 산화기체에 수행되는 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제10항에 있어서, 상기 연마된 혼합물의 평균 입자 직경은 200 내지 3미크론인 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제13항에 있어서, 상기 연마된 혼합물의 평균 입자 직경에 10미트론 또는 그보다 작은 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제7항에 있어서, 상기 자장이 일정한 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제7항에 있어서, 상기 자장 교류인 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제16항에 있어서, 상기 교류 자장의 주파수가 상응 주파수인 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 혼합물은 화학양론 식(A1-XBX)y CuzOw 에 따라 구비되며, 여기서 A는 주기율표 Ⅲa족중에서 선택된 하나 이상의 원소이며, B는 주기율표 Ⅱa족의 하나 이상의 원소이며, x=0-1, y=2-4, z=1-4 그리고 w=4-10인 것을 특징으로 하는 초전도 세라믹 물질 제조방법.
- 제1항에 있어서, 상기 혼합물은 화학양론 식(A1-XBX)y CuzOw에 따라 구비되며, 여기서 A는 Bi, Sb 및 As와 같은 주기율표 Vb족으로부터 하나 이상의 원소이며, B는 주기율표 Ⅱa족의 하나이상의 원소이며, x=0.3-1 ; y=2.0-4.0, z=1.0-4.0, w=4.0-10.0인 것을 특징으로 하는 초전도 세라믹 물질 제조방법.※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62-69447 | 1987-03-23 | ||
JP62069447A JPS63233069A (ja) | 1987-03-23 | 1987-03-23 | 超電導セラミツクスの作製方法 |
JP62075205A JPS63239112A (ja) | 1987-03-27 | 1987-03-27 | 超電導材料の作製方法 |
JP62-75205 | 1987-03-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880011830A true KR880011830A (ko) | 1988-10-31 |
KR910004991B1 KR910004991B1 (ko) | 1991-07-20 |
Family
ID=26410647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880003087A KR910004991B1 (ko) | 1987-03-23 | 1988-03-23 | 초전도 세라믹 물질 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6291403B1 (ko) |
EP (1) | EP0284354B1 (ko) |
KR (1) | KR910004991B1 (ko) |
CN (1) | CN1025088C (ko) |
AU (1) | AU600345B2 (ko) |
DE (1) | DE3855357T2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3889371T2 (de) * | 1987-03-23 | 1994-09-08 | Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa | Verfahren zur Herstellung von supraleitenden Keramiken. |
EP0306286B1 (en) * | 1987-08-31 | 1996-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for manufacturing superconducting ceramics materials |
CA2010611A1 (en) * | 1989-02-24 | 1990-08-24 | Charles N. Wilson | Method for orienting anisotropic superconducting crystals in a metal matrix composite |
US6773513B2 (en) * | 2002-08-13 | 2004-08-10 | Ut-Battelle Llc | Method for residual stress relief and retained austenite destabilization |
US7161124B2 (en) * | 2005-04-19 | 2007-01-09 | Ut-Battelle, Llc | Thermal and high magnetic field treatment of materials and associated apparatus |
CN100497256C (zh) * | 2006-11-30 | 2009-06-10 | 华南理工大学 | 一种致密的高定向排列陶瓷制备方法 |
FR2948688B1 (fr) | 2009-07-31 | 2012-02-03 | Centre Nat Rech Scient | Procede et dispositif de traitement d'un materiau sous l'effet d'un champ magnetique |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5841795A (ja) * | 1981-09-02 | 1983-03-11 | Hitachi Metals Ltd | 単結晶製造方法 |
JPS58217493A (ja) * | 1982-06-11 | 1983-12-17 | Nippon Telegr & Teleph Corp <Ntt> | 単結晶の引上方法 |
JPS60221392A (ja) | 1984-04-16 | 1985-11-06 | Toshiba Corp | 単結晶生成方法 |
DE3889371T2 (de) * | 1987-03-23 | 1994-09-08 | Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa | Verfahren zur Herstellung von supraleitenden Keramiken. |
HUT47761A (en) * | 1987-04-27 | 1989-03-28 | Mta Koezponti Fiz Kutato Intez | Method and apparatus for improving the quality of superconducting substances with the method of variable temperature magnetic separation |
US4975411A (en) | 1987-05-19 | 1990-12-04 | Fonar Corporation | Superconductors and methods of making same |
AU8102187A (en) * | 1987-07-29 | 1989-03-01 | Alan W. Hare | Superconductor structures and method of forming same |
US4963524A (en) | 1987-09-24 | 1990-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering device for manufacturing superconducting oxide material and method therefor |
US5096880A (en) * | 1988-10-20 | 1992-03-17 | General Dynamics Corp./Electronics Division | Method and apparatus for inducing grain orientation by magnetic and electric field ordering during bulk superconductor synthesis |
-
1988
- 1988-03-18 AU AU13296/88A patent/AU600345B2/en not_active Ceased
- 1988-03-22 EP EP88302512A patent/EP0284354B1/en not_active Expired - Lifetime
- 1988-03-22 DE DE3855357T patent/DE3855357T2/de not_active Expired - Fee Related
- 1988-03-23 US US07/172,222 patent/US6291403B1/en not_active Expired - Fee Related
- 1988-03-23 CN CN88101380A patent/CN1025088C/zh not_active Expired - Fee Related
- 1988-03-23 KR KR1019880003087A patent/KR910004991B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910004991B1 (ko) | 1991-07-20 |
DE3855357D1 (de) | 1996-07-18 |
US6291403B1 (en) | 2001-09-18 |
AU1329688A (en) | 1988-09-22 |
EP0284354A3 (en) | 1990-04-25 |
CN88101380A (zh) | 1988-10-05 |
CN1025088C (zh) | 1994-06-15 |
EP0284354A2 (en) | 1988-09-28 |
EP0284354B1 (en) | 1996-06-12 |
DE3855357T2 (de) | 1997-01-23 |
AU600345B2 (en) | 1990-08-09 |
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