KR880003430A - 방사선용 영상탐지 장치 제조방법 - Google Patents

방사선용 영상탐지 장치 제조방법 Download PDF

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Publication number
KR880003430A
KR880003430A KR1019870008600A KR870008600A KR880003430A KR 880003430 A KR880003430 A KR 880003430A KR 1019870008600 A KR1019870008600 A KR 1019870008600A KR 870008600 A KR870008600 A KR 870008600A KR 880003430 A KR880003430 A KR 880003430A
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KR
South Korea
Prior art keywords
protective layer
detection device
radiation image
image recording
image detection
Prior art date
Application number
KR1019870008600A
Other languages
English (en)
Inventor
요하네스 마리아 비이라지 마인더트
Original Assignee
로이스 반 더 부르그
비.브이.옵티쉬 인더스트리 “드 오우드 델프트”
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=19848383&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR880003430(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 로이스 반 더 부르그, 비.브이.옵티쉬 인더스트리 “드 오우드 델프트” filed Critical 로이스 반 더 부르그
Publication of KR880003430A publication Critical patent/KR880003430A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

방사선용 영상탐지 장치 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 영상기록원소의 행렬로 구성된 적어도 하나의 매트릭스가 반도체내의 기질내에 형성되는 영상기록장치의 제조방법에 있어서,한 보호층이 영상기록원소의 표면에 적용되고, 최고로 보호층의 두께와 같은 깊이를 갖는 홈이 상기 보호층내에 만들어지며, 그 홈이 영상기록원소의 행과 열사이에서 연장되고, 그리고 그 후에 CsI 층이 증기 용착에 의해 보호층의 상측면위에 적용됨을 특징으로 하는 방법.
  2. 제1항에 있어서, 보호층을 위한 재료가 Si3N4임을 특징으로 하는 방법.
  3. 제2항에 있어서, 홈의 너비 및 깊이가 10-20마이크로미터임을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870008600A 1986-08-07 1987-08-05 방사선용 영상탐지 장치 제조방법 KR880003430A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8602021 1986-08-07
NL8602021A NL8602021A (nl) 1986-08-07 1986-08-07 Werkwijze voor het vervaardigen van een beeldopneeminrichting voor radiografische toepassingen.

Publications (1)

Publication Number Publication Date
KR880003430A true KR880003430A (ko) 1988-05-17

Family

ID=19848383

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008600A KR880003430A (ko) 1986-08-07 1987-08-05 방사선용 영상탐지 장치 제조방법

Country Status (8)

Country Link
US (2) US4746619A (ko)
EP (1) EP0257678B1 (ko)
JP (1) JPS6347689A (ko)
KR (1) KR880003430A (ko)
DE (1) DE3762176D1 (ko)
IL (1) IL83428A (ko)
IN (1) IN165686B (ko)
NL (1) NL8602021A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031892A (en) * 1989-12-05 2000-02-29 University Of Massachusetts Medical Center System for quantitative radiographic imaging
US5187369A (en) * 1990-10-01 1993-02-16 General Electric Company High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
US5153438A (en) * 1990-10-01 1992-10-06 General Electric Company Method of forming an x-ray imaging array and the array
US5059800A (en) * 1991-04-19 1991-10-22 General Electric Company Two dimensional mosaic scintillation detector
US5208460A (en) * 1991-09-23 1993-05-04 General Electric Company Photodetector scintillator radiation imager having high efficiency light collection
US5463225A (en) * 1992-06-01 1995-10-31 General Electric Company Solid state radiation imager with high integrity barrier layer and method of fabricating
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
US5401668A (en) * 1993-09-02 1995-03-28 General Electric Company Method for fabrication solid state radiation imager having improved scintillator adhesion
US5596198A (en) * 1994-04-22 1997-01-21 The Regents, University Of California Gamma ray camera
US7019301B2 (en) * 1997-02-14 2006-03-28 Hamamatsu Photonics K.K. Radiation detection device and method of making the same
AU2001284525A1 (en) 2000-09-11 2002-03-26 Hamamatsu Photonics K.K. Scintillator panel, radiation image sensor and methods of producing them
CN1304853C (zh) * 2000-09-11 2007-03-14 浜松光子学株式会社 闪烁器面板、放射线图象传感器和它们的制造方法
US6483115B1 (en) * 2000-11-08 2002-11-19 General Electric Company Method for enhancing scintillator adhesion to digital x-ray detectors
US6324249B1 (en) 2001-03-21 2001-11-27 Agilent Technologies, Inc. Electronic planar laminography system and method
US6707046B2 (en) * 2002-01-03 2004-03-16 General Electric Company Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination
DE102010004890A1 (de) * 2010-01-18 2011-07-21 Siemens Aktiengesellschaft, 80333 Photodiodenarray, Strahlendetektor und Verfahren zur Herstellung eines solchen Photodiodenarrays und eines solchen Strahlendetektors

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3936645A (en) * 1974-03-25 1976-02-03 Radiologic Sciences, Inc. Cellularized Luminescent structures
US4197633A (en) * 1977-09-01 1980-04-15 Honeywell, Inc. Hybrid mosaic IR/CCD focal plane
US4234792A (en) * 1977-09-29 1980-11-18 Raytheon Company Scintillator crystal radiation detector
US4290844A (en) * 1979-02-26 1981-09-22 Carson Alexiou Corporation Focal plane photo-detector mosaic array fabrication
JPS55129782A (en) * 1979-03-30 1980-10-07 Hitachi Medical Corp Radiant ray detector
US4411059A (en) * 1979-10-18 1983-10-25 Picker Corporation Method for manufacturing a charge splitting resistive layer for a semiconductor gamma camera
FR2575602B1 (fr) * 1984-12-27 1987-01-30 Thomson Csf Dispositif photosensible de grand format, et procede d'utilisation
US4686761A (en) * 1985-03-21 1987-08-18 The United States Of America As Represented By The Secretary Of The Army Method of fabrication of low crosstalk photodiode array
US4618380A (en) * 1985-06-18 1986-10-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of fabricating an imaging X-ray spectrometer
JPS6243585A (ja) * 1985-08-21 1987-02-25 Toshiba Corp Ｘ線ｃｔ用検出器
US4672207A (en) * 1985-08-21 1987-06-09 The United States Of America As Represented By The United States Department Of Energy Readout system for multi-crystal gamma cameras

Also Published As

Publication number Publication date
NL8602021A (nl) 1988-03-01
EP0257678B1 (en) 1990-04-04
JPS6347689A (ja) 1988-02-29
US4746619A (en) 1988-05-24
DE3762176D1 (de) 1990-05-10
IL83428A (en) 1990-12-23
IN165686B (ko) 1989-12-09
IL83428A0 (en) 1988-01-31
US4906850A (en) 1990-03-06
EP0257678A1 (en) 1988-03-02

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E601 Decision to refuse application