KR870011635A - Metallized Resistors and Compositionally Controlled Multilayer Thin Film Systems - Google Patents

Metallized Resistors and Compositionally Controlled Multilayer Thin Film Systems Download PDF

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Publication number
KR870011635A
KR870011635A KR870005200A KR870005200A KR870011635A KR 870011635 A KR870011635 A KR 870011635A KR 870005200 A KR870005200 A KR 870005200A KR 870005200 A KR870005200 A KR 870005200A KR 870011635 A KR870011635 A KR 870011635A
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South Korea
Prior art keywords
tcr
layer
metal composition
thin film
coating
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KR870005200A
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Korean (ko)
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라몬 프리에토 아르제니스
페이톤 클라크 다비드
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잭 오이셔
노스 아메리칸 필립스 코포레이션
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Publication of KR870011635A publication Critical patent/KR870011635A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/16—Adjustable resistors including plural resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/232—Adjusting the temperature coefficient; Adjusting value of resistance by adjusting temperature coefficient of resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음No content

Description

금속 피막 저항기 및 조성적으로 조절된 다층 박막 시스템Metallized Resistors and Compositionally Controlled Multilayer Thin Film Systems

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 세개의 저항 피막 시스템(이중 두개는 본 발명의 조성적으로 조절된 다층 저항 피막 시스템)의 열처리 온도 T에 대한 저항온도 계수(TCR)를 도시한 그래프.1 is a graph showing the resistance temperature coefficient (TCR) versus the heat treatment temperature T of three resistive coating systems, two of which are the compositionally controlled multilayer resistive coating systems of the present invention.

제2도는 종래 기술 저항기 및 본 발명의 조성적으 조절된 다층 저항 피막 시스템을 사용하는 저항기의 열처리 온도 T에 대한 TCR 기울기를 도시한 그래프.2 is a graph showing the TCR slope over the heat treatment temperature T of a resistor using a prior art resistor and a compositionally controlled multilayer resistive coating system of the present invention.

Claims (10)

개선되고 제어된 TCR 기울기를 갖는 금속 피막 저항기에 있어서,In a metal film resistor with improved and controlled TCR slope, 저항 피막용에 적합한 절연 기판과 상기 기판에 피복된 제 1 금속 조성물의 제 1 층과,An insulating substrate suitable for a resist coating and a first layer of a first metal composition coated on the substrate, 상기 제 1 층 위에 그것과 같은 범위로 피복된 제 2 금속 조성물의 제 2 층을 구비하고, 각 층의 두께는 저항 피막을 위해서 선택된 저항률과 TCR 및 TCR 기울기의 함수이며, 제 1 금속 조성물과 제 2 금속 조성물은 다른 조성물인 것을 특징으로 하는 금속 피막 저항기.And a second layer of a second metal composition coated over the first layer in the same range, the thickness of each layer being a function of the resistivity selected for the resist coating and the TCR and TCR slopes, 2 A metal film resistor, wherein the metal composition is another composition. 제 1 항에 있어서,The method of claim 1, 상기 제 1 금속 조성물은 정의 TCR 및 부의 TCR 기울기를 갖고, 상기 제 2 금속 조성물은 부의 TCR 및 정의 TCR 기울기를 갖는 것을 특징으로 하는 금속 피막 저항기.And the first metal composition has a positive TCR and a negative TCR slope, and the second metal composition has a negative TCR and a positive TCR slope. 제 1 항에 있어서,The method of claim 1, 상기 저항기는 다수의 부가 층을 포함하고 저항 피막의 두개의 인접한 층들은 같은 재료 조성을 갖지 않는 것을 특징으로 하는 금속 피막 저항기.The resistor includes a plurality of additional layers and two adjacent layers of the resistive coating do not have the same material composition. 제 1 항, 제 2 항 또는 제 3 항에 있어서,The method according to claim 1, 2 or 3, 저항 피막의 각 층은 상기 기판상에 진공 피복되는 것을 특징으로 하는 금속 피막 저항기.Each layer of the resistive coating is vacuum coated on the substrate. 제 1 항, 제 2 항 또는 제 3 항에 있어서,The method according to claim 1, 2 or 3, 상기 저항기는 두개의 재료적으로 다른 저항 재료들을 교대로 진공 피복함으로써 얻어진 다수의 층들을 구비하는 것을 특징으로 하는 금속 피막 저항기.And the resistor has a plurality of layers obtained by alternately vacuum coating two materially different resistive materials. 저항 피막으로서 사용하기 위한 조성적으로 조절된 다층 박막 시스템에 있어서,In a compositionally controlled multilayer thin film system for use as a resist coating, 저항 피막용에 적합한 질연 기판과, 상기 기판에 피복된 제 1 금속 조성물의 제 1 박막층과,A flexible substrate suitable for resistance coating, a first thin film layer of a first metal composition coated on the substrate, 상기 제 1 박막층 위에 그것과 같은 범위로 피복된 제 2 금속 조성물의 제 2 박막층을 구비하고, 각 층의 두께는 저항 피막을 위해 선택된 저항률,A second thin film layer of a second metal composition coated on the first thin film layer in the same range as that, wherein each layer has a resistivity selected for the resist film, TCR 및 TCR 기울기의 함수이며, 제 1 금속 조성물과 제 2 금속 조성물은 다른 조성물인 것을 특징으로 하는 조성적으로 변조된 다층 박막 시스템.A compositionally modulated multilayer thin film system, wherein the first metal composition and the second metal composition are functions of TCR and TCR slopes and are different compositions. 제 6 항에 있어서,The method of claim 6, 상기 제 1 금속 조성물은 정의 TCR 및 부의 TCR 기울기를 갖는 반면, 상기 제 2 금속 조성물은 부의 TCR 및 정의 TCR 기울기를 갖는 것을 특징으로 하는 조성적으로 변조된 다층 박막 시스템.Wherein said first metal composition has a positive TCR and a negative TCR slope, while said second metal composition has a negative TCR and a positive TCR slope. 제 6 항에 있어서,The method of claim 6, 상기 시스템은 또한 다수의 부가층을 포함하고 두개의 인접한 층들은 같은 재료 조성을 갖지 않는 것을 특징으로 하는 조성적으로 조절된 다층 박막 시스템.The system also includes a plurality of additional layers and two adjacent layers do not have the same material composition. 제 6 항, 제 7 항 또는 제 8 항에 있어서,The method according to claim 6, 7, or 8, 저항 피막의 각 층은 상기 기판상에 진공 피복되는 것을 특징으로 하는 조성적으로 조절된 다층 박막시스템.Wherein each layer of the resistive coating is vacuum coated on the substrate. 제 6 항, 제 7항 또는 제 8항에 있어서,The method according to claim 6, 7, or 8, 상기 시스템은 두개의 재료적으로 다른 저항 재료들을 교대로 진공 피복함으로써 얻어진 다수의 층들을 구비하는 것을 특징으로 하는 조성적으로 조절된 다층 박막 시스템.And the system comprises a plurality of layers obtained by alternately vacuum coating two materially different resistive materials. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR870005200A 1986-05-29 1987-05-26 Metallized Resistors and Compositionally Controlled Multilayer Thin Film Systems KR870011635A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/868,843 US4766411A (en) 1986-05-29 1986-05-29 Use of compositionally modulated multilayer thin films as resistive material
US868843 1986-05-29

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KR870011635A true KR870011635A (en) 1987-12-24

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US (1) US4766411A (en)
EP (1) EP0247685B1 (en)
JP (1) JPS6325901A (en)
KR (1) KR870011635A (en)
DE (1) DE3775466D1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920329A (en) * 1989-09-13 1990-04-24 Motorola, Inc. Impedance-compensated thick-film resistor
DE4026061C1 (en) * 1990-08-17 1992-02-13 Heraeus Sensor Gmbh, 6450 Hanau, De
US5494845A (en) * 1993-08-17 1996-02-27 Raytheon Company Method of fabrication of bilayer thin film resistor
US5585776A (en) * 1993-11-09 1996-12-17 Research Foundation Of The State University Of Ny Thin film resistors comprising ruthenium oxide
EP0720216B1 (en) * 1994-12-29 2001-10-17 AT&T Corp. Linewidth metrology of integrated circuit structures
TW307015B (en) * 1995-03-28 1997-06-01 Matsushita Electric Ind Co Ltd
KR100398019B1 (en) * 2001-08-30 2003-09-19 정영찬 Method for manufacturing the film of a high capacity and high property metal oxide film resistor which insulation substrate is substituted with low content alumina
KR100407520B1 (en) * 2001-09-04 2003-11-28 필코전자주식회사 A high voltage surge resistors and a method for manufacturing thereof
US6873028B2 (en) * 2001-11-15 2005-03-29 Vishay Intertechnology, Inc. Surge current chip resistor
US7217981B2 (en) * 2005-01-06 2007-05-15 International Business Machines Corporation Tunable temperature coefficient of resistance resistors and method of fabricating same
US7898365B2 (en) * 2006-09-06 2011-03-01 Raytheon Company Integrated saw device heater
JP5210559B2 (en) * 2007-07-13 2013-06-12 株式会社日立製作所 Semiconductor device and manufacturing method thereof
US8242876B2 (en) 2008-09-17 2012-08-14 Stmicroelectronics, Inc. Dual thin film precision resistance trimming
US8659085B2 (en) 2010-08-24 2014-02-25 Stmicroelectronics Pte Ltd. Lateral connection for a via-less thin film resistor
US8436426B2 (en) * 2010-08-24 2013-05-07 Stmicroelectronics Pte Ltd. Multi-layer via-less thin film resistor
US8400257B2 (en) 2010-08-24 2013-03-19 Stmicroelectronics Pte Ltd Via-less thin film resistor with a dielectric cap
US8927909B2 (en) 2010-10-11 2015-01-06 Stmicroelectronics, Inc. Closed loop temperature controlled circuit to improve device stability
US8809861B2 (en) 2010-12-29 2014-08-19 Stmicroelectronics Pte Ltd. Thin film metal-dielectric-metal transistor
US9159413B2 (en) 2010-12-29 2015-10-13 Stmicroelectronics Pte Ltd. Thermo programmable resistor based ROM
US9232315B2 (en) 2011-03-16 2016-01-05 Phonon Corporation Monolithically applied heating elements on saw substrate
US8981527B2 (en) * 2011-08-23 2015-03-17 United Microelectronics Corp. Resistor and manufacturing method thereof
US8526214B2 (en) 2011-11-15 2013-09-03 Stmicroelectronics Pte Ltd. Resistor thin film MTP memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515692B2 (en) * 1973-07-06 1980-04-25
JPS5112656A (en) * 1974-07-22 1976-01-31 Iwatsu Electric Co Ltd HAKUMAKUTEIKOTAI
GB1586857A (en) * 1977-08-30 1981-03-25 Emi Ltd Resistive films
US4454495A (en) * 1982-08-31 1984-06-12 The United States Of America As Represented By The United States Department Of Energy Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity
DD223002A1 (en) * 1983-12-14 1985-05-29 Adw Ddr METHOD FOR PRODUCING DENSITY COAT RESISTIVES OF HIGH PRECISION
US4746896A (en) * 1986-05-08 1988-05-24 North American Philips Corp. Layered film resistor with high resistance and high stability

Also Published As

Publication number Publication date
EP0247685B1 (en) 1991-12-27
EP0247685A3 (en) 1989-05-17
JPS6325901A (en) 1988-02-03
US4766411A (en) 1988-08-23
DE3775466D1 (en) 1992-02-06
EP0247685A2 (en) 1987-12-02

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