KR100398019B1 - Method for manufacturing the film of a high capacity and high property metal oxide film resistor which insulation substrate is substituted with low content alumina - Google Patents

Abstract

The present invention can manufacture a resistor having a high capacity and high characteristics even if using a ceramic substrate having a low alumina content compared to the existing expensive product, and a high characteristic metal oxide film resistor having improved various characteristics related to reliability and its It relates to a film production method.

The film production method according to the present invention is a film preparation step (S10) for maintaining an insulating substrate (3) made of alumina-containing ceramic rod in the heating furnace 19 in which the film forming machine 17 is installed (S10); A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution (S20); 10 g of vanadium and 10 g of antimony trichloride by mixing and dissolving 50 ml of methanol and 8 g of hydrochloric acid to form a coating solution 2 (S30); A coating solution 1 coating step (S40) of applying the coating solution 1 to the surface of the base material (3); A first drying step (S50) of forming a metal oxide film (5) on the surface of the substrate (3) by drying the coating solution 1; A coating solution 2 coating step of applying the coating solution 2 onto the metal oxide film 5 (S60); A second drying step (S70) of forming a protective film (7) on the metal oxide film (5) by drying the coating solution 2; Cooling step (S80) for cooling the film forming machine 17 is completed to room temperature; Tertiary drying step (S90) of forming a buffer film (9) on the protective film (7); And a heat treatment step (S100).

Therefore, according to the present invention, even when using a ceramic substrate having a low alumina content, the temperature coefficient of resistance (TCR), short time overload (STOL), change rate (LLT), It is possible to obtain a low-cost, high-performance metal oxide film resistor that satisfies characteristics related to resistor reliability, such as moisture resistance life test (PCT).

Description

Method for manufacturing the film of a high capacity and high property metal oxide film resistor which insulation substrate is substituted with low content alumina}

The present invention relates to a method for manufacturing a film of a metal oxide film resistor having a high characteristic, and more particularly, even if a low-cost ceramic substrate having a low alumina content is used, the temperature coefficient of resistance (TCR) is higher than that of existing products (85% or more of alumina content). The present invention relates to a method for manufacturing a film of a high capacity and high characteristic metal oxide film resistor which is capable of satisfying characteristics related to the reliability of a resistor such as a short time overload (STOL), a rate of change (LLT), and a moisture resistance life test (PCT).

In general, resistors are resistors and are classified into fixed resistors and variable resistors, and are classified into carbon and metal based on materials used. Here, the fixed resistor is a fixed resistance value, widely used in electronic circuits, which are divided into carbon film resistors and metal film resistors. In addition, the variable resistor can easily change the resistance value, and is used in a volume control device and the like. Other types of resistors include high power winding resistors, hollow resistors and cement resistors.

Among these resistors, metal oxide film resistors, which are widely used in industrial fields, in particular, provide electrical conductivity through various methods of coating coating on the surface of insulating substrates. Inevitably be satisfied.

Accordingly, each resistor classifies products by capacity, application, and coating method, and determines their acceptance as a product based on the values obtained from experiments specified in the national standard allowable ranges such as JIS and KS.

In order to obtain the characteristic values within the prescribed ranges, various kinds of insulating substrates and various methods of film production are applied in the manufacturing process, and whether or not the characteristic values of the resistor are acquired depending on the type or method.

The metal oxide film resistor is manufactured by a manufacturing method using a vacuum deposition method such as a liquid spray method or sputtering, etc. The process is briefly described through the resistor shown by reference numeral 101 in FIG. 1.

First, the SnO ₂ -based metal oxide film 103 is coated on a rod-shaped ceramic substrate 105 having a length of 5 to 14 mm and a diameter of 1.3 to 4.5 mm. Then, the metal terminal cap 107 is fixed to both ends of the coated article 103 and 105, and then the lead wire 109 is attached to the terminal cap 107 and the electrical insulation and moisture-proof cover 111 is attached. ) And antimony oxide is added to tin oxide to lower the temperature coefficient. At this time, the spray method is applied to the coating of the metal oxide (103), for this purpose SnCl ₄ and a small amount of SbCl ₃ is dissolved in a mixed solution of water, HCl, alcohol to prepare a starting solution and rod-shaped mullite (mullite) The starting solution is spray-coated on the corundum ceramic substrate 105 at a high temperature. The coating process using the spray apparatus is as follows.

The solution is charged into a feed container, the rod-like material 105 is charged into a rotating drum, and the temperature of the furnace is raised to 500 to 800 ° C. The solution is then sprayed with the compressed air through a nozzle and applied to the surface of the ceramic rod 105. After the heating and coating process, the product is taken out of the furnace and heat treated for several tens to several hundred minutes at 200 to 300 ° C. for thermal and electrical stability of the metal oxide film. In this manner, when the coating of the coating 103 is completed, the metal cap 107 is fixed to both ends of the substrate 105, and the spiral 113 is formed on the coating 103 of the substrate to have a desired resistance value. The post-treatment process is completed by welding to the cap 107 and finally applying the protective film 111.

At this time, as the insulating substrate used as the substrate 105, a material having various components such as alumina, cordierite, mullite, forsterite, steatite, and other semiconductor substrates is used. A resistor having a desired characteristic value is obtained by varying the content of the component.

By the way, the alumina-based insulating material which is widely used to date as the insulating material of the resistor 101 is manufactured from 75% to 98% by adjusting the content of alumina, and satisfies the characteristic value and the required resistance capacity. In order to obtain, a certain amount of insulating base material is selected and used.

At this time, according to the alumina content (%) used alternatively, the insulation base material has a large unit price gap, which greatly affects the manufacturing cost, and the resistor itself has a small body size due to the development of high characteristics, miniaturization, and high capacity. Since a large capacity must be given as a standard, it is gradually miniaturizing by using the insulating base material with a high component content.

Such miniaturized resistors are referred to as mini-type or small-type resistors. For example, as shown in Table 1 below, they have a good characteristic value while maintaining a capacity of 2W with a 1W elementary specification. The content is increasing from the alumina content of 75% to alumina content of 85%, 87%, 93%, 98%.

Previous Original (MINI-TYPE) Alumina Content 75% (Large) 85% or more of alumina (small) 1 / 2W (2.5 X 8) 1W (3 X 10) 1W (2.5 X 8) 2W (4.5 X 14) 2W (3 X 10) 5W (7 X 25) 3W (4.5 X 14)

As the resistors have been smaller in size, the cost of manufacturing is inevitably increased, and since the components of the insulating substrate and the characteristic values of the range which cannot be obtained by the film production method must be satisfied, high alumina content and high alumina content are required. Since the use of ceramic substrates, there was a problem that seriously lowers the profitability in the electronic and electrical industries.

Therefore, the present invention focuses on the fact that the selection of an insulating substrate is important for the resistor to obtain a predetermined characteristic value, but the coating method and its component elements of the coating that determine the electrical conductivity and various characteristic values on the substrate are more important. It maintains a predetermined resistance value even after the voltage corresponding to the magnetic capacity is directly applied, and keeps the rate of change within the specified range, thereby causing electrical and thermal deformation against impacts such as electric shock, temperature change, and moisture infiltration during voltage application. The purpose of the present invention is to provide a high reliability even when using the same size ceramic substrate with a significantly low alumina content as the insulating substrate as shown in Table 2 below.

Previous Original (MINI-TYPE) Invention Alumina Content 75% (Large) 85% or more of alumina (small) Alumina content 75% (small) 1 / 2W (2.5 X 8) 1W (3 X 10) 1W (2.5 X 8) 1W (2.5 X 8) 2W (4.5 X 14) 2W (3 X 10) 2W (3 X 10) 5W (7 X 25) 3W (4.5 X 14) 3W (4.5 X 14)

1 is a cross-sectional view of a conventional resistor.

2 is a cross-sectional view of a resistor made in accordance with the present invention.

3 is a block diagram schematically illustrating a resistor manufacturing system.

4 is a schematic cross-sectional view of a resistor in which a film is cut three times.

* Explanation of Signs of Major Parts of Drawings *

1: Resistor 3, 3 ': Base

5: primary metal oxide film 7: secondary protective film

9: 3rd buffer film 11: Metal terminal

13: lead wire 15: silicone paint

16: cutting helix 17: clogging

19: heater 21: liquid supply

23: injector 25: air dryer

27: drive shaft

In order to achieve the above object, the present invention is applied to alumina, cordierite, mullite, forsterite, steatite, other substrates of the semiconductor as a primary coating to determine the resistance value or characteristic value; A protective film for protecting the resistance value or the characteristic value formed in the primary film without affecting the resistance value as a secondary film; And the alumina content is maintained at 75% or less while alleviating the change in resistance value or characteristic value of the primary film due to the increase of surface temperature, irregular flow of current, electrical stress, and penetration of moisture for high characterization. It provides a high-performance metal oxide film resistor having a triple film structure consisting of a buffer film.

In addition, the film preparation step of maintaining an insulating substrate made of a ceramic rod containing alumina at 500 ~ 800 ℃ in a heating furnace equipped with a film deposition machine; A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution; A coating solution 2 preparing step of forming a coating solution 2 by dissolving 10 g of vanadium and 10 g of antimony trichloride in 50 ml of methanol and 8 g of hydrochloric acid; Coating 1 liquid coating step of applying the coating 1 liquid to the surface of the substrate; A first drying step of forming a metal oxide film on the surface of the substrate by drying the coating solution 1; Coating 2 liquid coating step of coating the coating 2 liquid on a metal oxide film; A second drying step of forming a protective film on the metal oxide film by drying the coating solution 2; Cooling step of cooling the film-coating finisher to room temperature; Tertiary drying step of forming a buffer film on the protective film; And it provides a high characteristic metal oxide film manufacturing method of the resistor consisting of a heat treatment step.

Hereinafter, a method of manufacturing a film of a metal oxide film resistor of high characteristics according to the present invention will be described in detail with reference to the accompanying drawings.

The high-performance metal oxide film resistor of the present invention is, as indicated by reference numeral 1 in FIG. 2, the primary film 5, the secondary film 7, and the tertiary film 9 which are sequentially coated on the insulating base 3. ) Or more coatings, and other than that, similar to the general metal oxide coating, the metal terminal 11 capped at both ends of the base material 3 and the lead wires welded to both ends of the metal terminal 11, respectively. 13) and the silicone coating material 15 which is apply | coated to the whole surface of the base material 3 to which the welding was completed until the lead wire 13 finally has a structure comprised.

As the insulating substrate 3 according to the present invention, alumina-containing ceramic rods may be used, and in addition to alumina, ceramic rods containing cordierite, mullite, forsterite, steatite, and other semiconductor materials may be used. It may be.

The metal oxide film 5 applied primarily on the insulating substrate 3 serves to determine the resistance value of the resistor 1 or the characteristic value related to the resistor reliability, and is crystalline as an auxiliary component in the main material tin oxide. Substances such as iron, indium, nickel, phosphorus, zinc, cadmium or antimony are included that can effectively increase the resistivity without dropping. At this time, the addition amount of the auxiliary component is an amount that tin and cation can be mixed in a ratio of 1: 0.003 ~ 1: 0.15, the thickness of the film is 0.05 ~ 2㎛, maintains crystallinity, large particle size, high specific resistance It is required to have a value.

As described above, the protective film 7 applied secondly on the primary metal oxide film 5 applied on the base material 3 does not affect the resistance value of the resistor 1, but only on the metal oxide film 5. It serves to protect the formed resistance value or characteristic value. Tin oxide is used as the main material, and fluorine, phosphorus, arsenic, iron, magnesium, barium, bismuth, zinc, copper, boron, and cadmium can easily adjust the resistivity without affecting the crystal phase as an auxiliary component. , Vanadium and the like are added, and the amount of the vanadium is 1: 0.005 to 1: 0.1 by the ratio of tin and cation. At this time, the protective film 7 has a thickness of 0.005 to 0.5 µm and should have a specific resistance smaller than the specific resistance of the metal oxide film 5 without degrading crystallinity.

As shown in Fig. 2, the buffer coating 9, which is a tertiary coating applied on the protective film 7, has a low alumina content in order to overcome the shortage of the alumina content of the ceramic substrate, and thus to high characterize the resistor. The surface temperature of the coating film 5 rises, the current flow in the coating film 5 becomes irregular, the electrical stress is generated, or moisture penetrates into the coating film 5. In addition, it plays a role to alleviate the phenomenon that the characteristic value changes.

The metal oxide film resistor 1 of the present invention configured as described above is coated with coatings in a system as shown in FIG. 3, which system is a film forming apparatus 17 and a film forming apparatus 17 used for film deposition as shown. It consists of a heating furnace (19) for heating the liquid, a liquid supplier (21) for supplying the coating liquid, an injector (23) for injecting the coating liquid, and an air dryer (25) for blowing dry air.

Here, the film-forming machine 17 is a wire mesh tube made of cylindrical stainless steel, and can put in and remove the base material 3 to be filmed, and is rotatably provided in the heating furnace 19. The heating furnace 19 is a heat-insulated steel case with a drive shaft 27 for rotational driving of the membrane 17 inside, a heater for heating inside, and an exhaust pipe for discharging waste. And other facilities to keep the atmosphere in the furnace stable. In addition, the liquid supplier 21 contains a predetermined amount of the coating liquid and supplies it to the injector 23, and the injector 23 blows the coating liquid supplied from the liquid supplier 21 in the air dryer 25. It is made to atomize and inject by the induction pressure of the air, the air dryer 25 serves to remove the moisture and foreign matter in the air supplied to the injector 23 in advance, and the induction pressure applied to the injector 23 Built-in adjustable pressure regulator. In addition, the system is equipped with a temperature controller, an exhaust system, an electric motor, and other controllers.

Now, look at the film production method of the metal oxide film resistor according to the present invention by the above system with reference to FIGS. 2 and 3 as follows.

Example 1

First, as the film preparation step (S10), an appropriate amount of the insulating base material 3 made of alumina-containing ceramic rod is loaded into the film forming machine 17 in accordance with the working amount, and the film forming machine 17 is rotated in the heating furnace 19. After fixing so as to operate various control devices to maintain the atmosphere in the furnace 19 to the working temperature of 500 ~ 800 ℃.

Into a 500 ml Erlenmeyer flask, 25 g of stannic chloride and 8 mol% of antimony trichloride were weighed in, and 50 ml of methanol and 5 ml of concentrated hydrochloric acid were weighed and dissolved to prepare and prepare a membrane 1 solution. S20).

Subsequently, 10 g of vanadium and 10 g of antimony trichloride are mixed and dissolved in 50 ml of methanol and 8 g of hydrochloric acid in a 300 ml Erlenmeyer flask to prepare a coating solution 2 (S30).

When the preparation of the coating solution is completed, the coating solution 1 of the coating solution of the step (S20) is put into the liquid supply 21 to prepare a predetermined amount suitable for the resistance value to be obtained (P41), and the air is received from the air dryer 25 to receive the liquid. Guide film 1 is applied to the surface of the substrate 3 which is rotated by the film 17 through the injector 23 and guided to the feeder 21 (S40). At this time, the coating speed and coating amount of the coating solution 1 should be used according to the fine adjustment of the induction pressure induced by the injector 23 and the various types of injectors prepared.

After coating the coating solution 1 (S40), the coating film 17 is rotated in the heater 19 at a temperature of about 500 to 800 ° C. while the coating film 17 is dried, and the coating film 1 solution is dried to dry the surface of the substrate 3. A metal oxide film 5 is formed in step S50.

Subsequently, the coating solution 2 prepared in step S30 is applied on the metal oxide film 5 according to the above steps S40 to S50 (S60).

After the coating of the coating solution 2, the temperature of the heating furnace 19 is lowered to 200 to 300 ° C. and maintained for 5 to 20 minutes to dry the coating solution 2 to form a protective film 7 on the metal oxide film 5 ( S70).

Separating the coating film 17 of the coating film 1 solution and the coating film 2 solution from the heater 19 and put it in the prepared container for 2 to 3 hours while keeping in a clean place to cool the temperature to room temperature (S80), This is to minimize the damage that may occur due to a sudden temperature change on the surface of the deposited substrate 3.

Subsequently, the substrate 3 on which the primary and secondary coatings 5 and 7 are formed is dipped into an appropriate amount of solution for several minutes, followed by primary drying with hot air at 70 ° C., followed by drying at 200 ° C. for 2 hours. By forming the buffer film 9 on the film 7 (S90), damage to the film 5, thermal deformation and the like are suppressed.

Finally, the heat treatment for 10 to 30 hours at 200 ~ 350 ℃ to solve the internal stress of the film (5) produced during the production and to stabilize the crystallinity (S100).

At this time, the substrate 3 is removed to improve adhesion and density between the substrate 3 and the coating 5 by removing foreign substances on the surface generated in the substrate production process and adjusting the roughness of the substrate surface before coating the coating liquid. Rotate the aqueous solution of% hydrofluoric acid (HF) and pure water in a composition ratio of 70: 1 with dipping at room temperature for 5 to 15 minutes, and then wash with pure water again for 60 to 90 minutes and then at 200 ° C for at least 2 hours. It goes through a pretreatment process of drying and cooling (P00).

(Example 2)

According to Example 2, steps similar to those of Example 1 are followed, and the preparation of the deposition is performed in the same manner as in the deposition preparation step (S10) of Example 1.

Next, 20 g of stannic chloride and 10 mol% of antimony trichloride were dissolved in 50 ml of methanol in a 500 ml Erlenmeyer flask in the preparation of membrane 1 solution of Preparation Example 1 (S20), followed by 7 ml of concentrated hydrochloric acid. Mixing to form a coating solution 1 (S120).

Then, in the membrane preparation 2 solution preparation step (S30) of Example 1, 15 g of tungsten soda and 15 g of antimony trichloride were mixed in 100 ml of methanol and 10 g of hydrochloric acid in a 300 ml Erlenmeyer flask to prepare a membrane 2 solution (S130).

Subsequently, according to the steps (S40 to S100) of Example 1, the coating film 1 solution and the coating film 2 solution are applied to the substrate 3 to form the coatings 5, 7, and 9 in order.

Finally, in order to solve the internal stress of the coating film 5 and to stabilize the crystallinity by heat treatment as in Example 1, the treatment is performed at a temperature of 200 to 350 ° C. for 26 hours (S200).

(Example 3)

Example 3 is also prepared in accordance with the first film preparation step (S10) of Example 1 as in Example 1, and then prepare a film 1 solution according to the film 1 solution preparation step (S20).

Then, in the membrane preparation 2 solution preparation step (S30) of Example 1 to prepare a membrane 2 solution by mixing 10 g phosphorus chloride and 3 g of antimony trichloride in 300 ml Erlenmeyer flask in 50 ml of methanol and 3 g of hydrochloric acid (S230). ).

Subsequently, the coating film 1 solution is applied on the substrate 3 while the steps S40 to S50 of Example 1 are formed to form a metal oxide film 5, and the coating film 2 solution is applied according to the steps S60 to S100. The coating is applied on the film 5 to form a protective film 7 and a buffer film 9 in sequence.

(Example 4)

Similarly, in Example 4, first, the film preparation preparation through the film preparation step (S10) as in Example 1. Next, according to the step (S20) of Example 1 to prepare a coating 1 solution the same as the coating 1 solution.

Next, in step S30 of Example 1, 12 g of chromium chloride and 5 g of antimony trichloride were mixed and dissolved in 50 ml of methanol and 5 g of hydrochloric acid in a 300 ml Erlenmeyer flask to form a coating solution 2 (S330).

Then, the coating solution 1 is applied on the substrate 3 while the steps S40 to S50 of Example 1 are formed to form a metal oxide film 5, and again according to the steps S60 to S100 of Example 1 The coating solution 2 prepared in step S330 is applied on the coating 5 to form the protective coating 7 and the buffer coating 9 in sequence.

(Example 5)

Example 5 is a case of coating the coating in four layers, first, the film preparation as in step S10 of Example 1.

Then, 20 g of stannic chloride and 10 mol% of antimony trichloride were dissolved in 50 ml of methanol in a 500 ml Erlenmeyer flask in the preparation of membrane 1 solution of Preparation Example 1 (S20), followed by 7 ml of concentrated hydrochloric acid. By mixing, the same coating solution 1 as that of the coating solution 1 of Example 2 was prepared (S420).

Subsequently, 5 g of tin oxide and 7 g of antimony trichloride are mixed with 50 ml of methanol and 8 g of hydrochloric acid in the preparation of the coating solution 2 of Example 1 (S30) to form the same coating solution 2 as the coating solution 2 of Example 2 ( S430).

Next, 45 g of stannic chloride and 21 g of phosphorus pentachloride were mixed with 200 ml of methanol aqueous solution, and dissolved in pure water at an appropriate ratio to prepare a coating solution 3 (S431). Instead of 21 g of phosphorus pentachloride, 6 g of antimony trichloride was mixed and dissolved to prepare and prepare a coating solution 4 (S433).

In this way, when the coating solution 1 to the coating solution 4 is ready, repeat the steps (S40 to S50) of Example 1 while coating the coating solution 1 to coating solution 4 in order to form a four-layer coating on the substrate (3) In accordance with the steps (S60 to S100) of Example 1, a multi-layered film is obtained. The coating of the coating films 3 and 4 formed in the steps S431 and S433 is performed by using a material having a low specific resistance. To improve the quality.

(Example 6)

In Example 6, the coating film was applied in four layers, and the coating film 4 solution of the coating film used in Example 5 was replaced with the coating film 2 solution of Example 3.

That is, in the membrane preparation 4 solution preparation step (S433) of Example 5, 8 ml phosphorus chloride and 5 g antimony trichloride were mixed in a 300 ml Erlenmeyer flask to 50 ml methanol and 7 g hydrochloric acid to form a membrane 4 solution (S533). .

(Example 7)

Example 7 is a case in which the cutting ratio is different based on the same coating amount in the coating film 1 solution and the coating film 2 solution coating step (S40, S60) of Example 1, and in Example 1 has a suitable cutting ratio based on the finished resistance value The comparison was made.

Therefore, the resistor 1 coated with multiple coatings through the above process is as shown in FIG. 4, and is alternatively used within a certain range for each application to obtain a satisfactory characteristic value and necessary resistance capacity among various insulating materials. The alumina content of the coating can also vary from 75%, 85%, 87% and 93%, respectively.

The values for various properties according to the alumina content of the coated coated resistors obtained according to the manufacturing methods of each of the above-described examples are shown in Table 3 below, in particular, in the case of the coated coated resistor according to Example 1 The result at the time of applying and obtaining a completed resistance value was shown together in Example 7.

division Initial resistance IRV (Ω) Finished Resistance FRV (Ω) Existing product (Al 85% or more) The present invention (Al 75% or less) STOL TCR PCT LLT STOL TCR PCT LLT Example 1 10 to 20 3K3 -0.562 118 0.752 -1.07 -0.698 33 0.770 -1.21 30 to 40 10K -0.580 166 -1.125 -1.47 -0.415 -125 -1.300 -1.38 60 to 80 36K -0.558 -66 -0.331 -2.92 -0.576 -84 -0.650 -2.01 150 to 200 82 K -0.249 60 -1.435 -2.78 0.189 -156 -1.765 -1.96 Example 2 10 to 20 5K6 -0.336 93 0.285 -1.23 -0.475 -204 0.360 -0.98 30 to 40 10K -0.151 156 -0.614 -0.93 -0.376 -216 -0.600 -1.09 60 to 80 36K -0.101 98 -0.326 -1.71 -0.132 -127 -0.330 -1.99 150 to 200 68 K -0.025 -25 -2.501 -2.11 0.042 -143 -2.375 -2.08 Example 3 10 to 20 5K6 -0.523 85 2.179 -1.67 -0.665 -190 1.894 -1.13 150 to 200 68 K -0.192 90 -1.426 -2.81 0.150 -145 -1.363 -1.96 Example 4 10 to 20 5K6 -0.788 110 2.351 -1.29 -0.886 -170 2.179 -1.45 150 to 200 68 K -0.105 80 -1.795 -1.79 0.305 -130 -1.653 -2.17

division Initial resistance IRV (Ω) Finished Resistance FRV (Ω) Existing product (Al 85% or more) The present invention (Al 75% or less) STOL TCR PCT LLT STOL TCR PCT LLT Example 5 10 to 20 3K3 -1.043 10 0.465 -2.23 30 to 40 10K -1.982 -148 -1.178 -2.96 60 to 80 36K 1.267 -62 -0.478 -3.03 150 to 200 68 K -1.250 -156 -1.397 -3.96 Example 6 60 to 80 36K 1.485 -96 -0.376 -3.47 150 to 200 68 K -1.321 -169 -1.278 -3.56 Example 7 10 to 20 1K5 -1.476 -150 0.748 -1.95 30 to 40 6K8 -1.352 -120 -1.368 -3.98 60 to 80 15K 1.379 -62 -0.851 -4.78 150 to 200 47K -0.936 -127 -1.963 -2.95

Here, Al 75%: Alumina content 75%

Al 85%: Alumina content 85%

In Table 3, Example 5 and Example 6 shows a state in which the existing film form does not achieve high characteristics by reducing the content of alumina, and Example 7 shows the proper magnification even when the component of the film is reinforced. If you make a low-magnification completion resistance, you do not get high characteristics.

The change rate (LLT) is a change rate for the result after 1.5 hours on at a temperature of 70 ° C. and a rated voltage {√ (P · R)}, a test for 1000 hours while being 0.5 hours off, and then left at room temperature for 1 hour.

The specifications of the part reliability test applied at this time are as follows.

The short-time overload (STOL) test is performed by 2.5 times the rated voltage for 5 seconds, 45 seconds off, 5 times, and then left at room temperature for 1 hour. However, the maximum overload voltage is applied when the test maximum voltage exceeds the specified maximum load. (R MAX ± 1%).

When the temperature coefficient (TCR) is the resistance measured after leaving R1 at room temperature (T1) for 30 minutes, the resistance measured after leaving R2 at room temperature of 100 ° C (T2) for 30 minutes,

TCR = (R2-R1) / R2 x 10,000 (ppm / ° C)

It is the value calculated by the formula (MAX TCR ± 350 ppm / ℃).

The normal load life (LLT) test is performed after 1.5 hours on and 0.5 hours off and 1000 hours after the rated voltage is applied under the condition of 70 ± 2 ℃ and left at room temperature for 1 hour (R MAX ± 5%).

PCT (Pressure Cooker Test) is measured after leaving for 1 hour at the conditions of Ta = 127 ± 2 ℃, RH = 100%, 1.5G and left for 1 hour at room temperature (R MAX ± 7%).

As described above, according to the present invention, as shown in Table 2, the test results of products using a ceramic substrate having a high alumina content of 85% (Al 85%) or more, and a low alumina content of 75% (Al 75) according to the present invention. %) When comparing the results of the products using the ceramic substrates below, it can be seen that the characteristic values of the resistor according to the present invention have high reliability without any deterioration.

Therefore, it is possible to create a low manufacturing cost by replacing the expensive ceramic substrate with a low-cost insulating substrate of 40% or more, and to reduce the alumina content of the ceramic substrate used to reduce the cost while manufacturing a high quality resistor, By using, you can secure high profits and competitiveness. In addition, the economic burden on users can be reduced due to fluctuations in the purchase price of required materials, and the stabilization of manufacturing costs can lead to increased competitiveness and maximize profitability, and economic and time advantages as a substitute for raw material imports. In addition, multi-standard raw material purchasing management, inventory management and manufacturing process management can be simplified, and immediate replacement with existing products can be achieved.

Claims (8)

delete A film preparation step of maintaining the insulating substrate 3 made of a ceramic rod having an alumina content of 75% or less at 500 to 800 ° C. in the heating furnace 19 in which the film depositor 17 is installed (S10); A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution (S20); 10 g of vanadium and 10 g of antimony trichloride by mixing and dissolving 50 ml of methanol and 8 g of hydrochloric acid to form a coating solution 2 (S30); A coating solution 1 coating step (S40) of applying the coating solution 1 to the surface of the base material (3); A first drying step (S50) of forming a metal oxide film (5) on the surface of the substrate (3) by drying the coating solution 1; A coating solution 2 coating step of applying the coating solution 2 onto the metal oxide film 5 (S60); A second drying step (S70) of forming a protective film (7) on the metal oxide film (5) by drying the coating solution 2; Cooling step (S80) for cooling the film forming machine 17 is completed to room temperature; Tertiary drying step (S90) of forming a buffer film (9) on the protective film (7); And a heat treatment step (S100). 3. The substrate 3 according to claim 2, wherein the base material 3 is an aqueous solution having a ratio of 55% hydrofluoric acid and pure water in a composition ratio of 70: 1 in order to improve adhesion and density with the metal oxide film 5 at room temperature. Rotating while dipping for 15 minutes, washed with pure water again for 60 to 90 minutes, and then subjected to a pretreatment step (P00) of drying and cooling at a temperature of 200 ° C. for 2 hours or more. Film manufacturing method. The method of claim 2, wherein 20 g of stannic chloride and 10 mol% of antimony trichloride are dissolved in 50 ml of methanol, and then mixed with 7 ml of concentrated hydrochloric acid to prepare a coating 1 solution. Creating (S120); In the coating 2 solution preparation step (S30), 5g of tin oxide and 10g of antimony trichloride are mixed with 75ml of methanol and 6g of hydrochloric acid to form a coating 2 solution (S130). Film manufacturing method. The method according to claim 2, wherein in the coating solution 2 preparing step (S30), 8g of phosphorus chloride and 5g of antimony trichloride are mixed with 50ml of methanol and 7g of hydrochloric acid to form a coating solution 2 (S230). A method for producing a high characteristic metal oxide film of a resistor. The method of claim 2, wherein in the coating solution 2 preparing step (S30), 6g of chromium chloride and 5g of antimony trichloride are mixed with 50ml of methanol and 4g of hydrochloric acid to form a coating solution 2 (S330). Method for producing a high characteristic metal oxide film of a resistor. The method of claim 2, wherein 20 g of stannic chloride and 10 mol% of antimony trichloride are dissolved in 50 ml of methanol, and then mixed with 7 ml of concentrated hydrochloric acid to prepare a coating 1 solution. Composition (S420); In the coating 2 solution preparation step (S30) by mixing 5g of tin oxide and 10g of antimony trichloride in 75ml of methanol and 6g of hydrochloric acid to form a coating 2 solution (S430); 45 g of ditin solution and 21 g of phosphorus pentachloride were mixed with 200 ml of aqueous methanol solution to dissolve with an appropriate ratio of pure water to prepare a three-coating solution (S431); and the three-coating solution (S431). Method for preparing a high-resistance metal oxide film of a resistor, characterized in that it further comprises a; coating film 4 liquid preparation step (S433) by mixing and dissolving 6 g of antimony trichloride instead of 21 g of phosphorus pentachloride. [8] The method of claim 7, wherein the coating solution 4 is prepared by mixing 8 g of phosphorus chloride and 5 g of antimony trichloride in 50 ml of methanol and 7 g of hydrochloric acid (S533). A method for producing a high characteristic metal oxide film of a resistor.