KR100398018B1 - Method for manufacturing high property metal oxide film of resistor - Google Patents

Abstract

The present invention relates to a resistor having a high characteristic metal oxide film and a method for producing the film, by which a high completion resistance value can be obtained by enabling the production of a resistor having a high initial resistance value, and the various characteristic values related to reliability are improved.

The film production method according to the present invention is the film preparation step (S10) for maintaining an insulating substrate (3) made of alumina-containing ceramic rod at a suitable temperature in the heating furnace (19) in which the film deposition machine (17) is installed; A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution (S20); A coating solution 2 preparing step of forming a coating solution 2 by dissolving 5 g of tin oxide and 7 g of antimony trichloride in 50 ml of methanol and 8 g of hydrochloric acid (S30); A coating solution 1 coating step (S40) of applying the coating solution 1 to the surface of the base material (3); A first drying step (S50) of forming a metal oxide film (5) on the surface of the substrate (3) by drying the coating solution 1; A coating solution 2 coating step of applying the coating solution 2 onto the metal oxide film 5 (S60); A second drying step (S70) of forming a protective film (7) on the metal oxide film (5) by drying the coating solution 2; Cooling step (S80) for cooling the film forming machine 17 is completed to room temperature; Tertiary drying step (S90) of forming a buffer film (9) on the protective film (7); And a heat treatment step (S100).

Therefore, according to the present invention, since the thickness of the film can be made thin while preventing the reduction of the resistance value or the characteristic value, the initial resistance value of the film can be increased. Therefore, the resistor having a high completion resistance value without increasing the number of cutting of high spirals. Will be obtained.

Description

Method for manufacturing high property metal oxide film of resistor

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal oxide film resistor having a high characteristic and a method for manufacturing the film, and more particularly, it is possible to produce a resistor having a high initial resistance, thereby obtaining a high completion resistance and having a temperature coefficient of resistance (TCR). B) It relates to a resistor having a high characteristic metal oxide film having improved characteristic values related to resistor reliability such as a short time overload (STOL) and a method of manufacturing the film.

In general, resistors are resistors and are classified into fixed resistors and variable resistors, and are classified into carbon and metal based on materials used. Here, the fixed resistor is a fixed resistance value, widely used in electronic circuits, which are divided into carbon film resistors and metal film resistors. In addition, the variable resistor can easily change the resistance value, and is used in a volume control device and the like. Other types of resistors include high power winding resistors, hollow resistors and cement resistors.

Among these various resistors, metal oxide film resistors, which are widely used in industrial fields, include a number of transition elements as the element selected as a component element to be selected in forming a metal oxide film, many of which are lost first. Since they have electron pairs, the +2 oxidation state is common, such as Sc (+3), Ti (+4), V (+4), Cr (+3), Mn (+2), Fe (+3), Selecting the most stable state of each element, such as Co (+2), Ni (+2), Cu (+2), Zn (+2), and forming an appropriate mixture, form a metal oxide film with high characteristics. It's the most important part of that.

In addition, the resistivity has a negative temperature coefficient with respect to temperature, and since every atom is composed of an atomic nucleus having positive characteristics at its center and an electron having negative characteristics orbiting around the nucleus. In the case of a metal element or a semiconductor in which many free electrons exist, when a sufficient energy is supplied, positive (+) electrons move to the outside in the form of hot electron emission, photoelectron emission, secondary electron emission, and high field emission according to the supplied energy. It is characterized in that it is stabilized in the thermal equilibrium state and thus has high reliability.

Such a metal oxide film resistor is manufactured by a manufacturing method using a liquid deposition method or a vacuum deposition method such as sputtering, etc. The process will be briefly described through the resistor shown in FIG.

First, the SnO ₂ -based metal oxide film 103 is coated on a rod-shaped ceramic substrate 105 having a length of 5 to 6 mm and a diameter of 1.5 to 2 mm. Then, the metal terminal cap 107 is fixed to both ends of the coated article 103 and 105, and then the lead wire 109 is attached to the terminal cap 107 and the electrical insulation and moisture-proof cover 111 is attached. ) And antimony oxide is added to tin oxide to lower the temperature coefficient. At this time, the spray method is applied to the coating of the metal oxide (103), for this purpose SnCl ₄ and a small amount of SbCl ₃ is dissolved in a mixed solution of water, HCl, alcohol to prepare a starting solution and rod-shaped mullite (mullite) The starting solution is spray-coated on the corundum ceramic substrate 105 at a high temperature. The coating process using the spray apparatus is as follows.

The solution is charged to a supply container, and the rod-shaped material 105 is charged to a rotating drum, and the temperature of the furnace is raised to 500 to 800 ° C. The solution is then sprayed with the compressed air through a nozzle and applied to the surface of the ceramic rod 105. After the heating and coating process, the product is taken out of the furnace and heat treated for several tens to several hundred minutes at 200-300 ° C. for thermal and electrical stability of the metal oxide film. In this manner, when the coating of the coating 103 is completed, the metal cap 107 is fixed to both ends of the substrate 105, and the spiral 113 is formed on the coating 103 of the substrate to have a desired resistance value. The post-treatment process is completed by welding to the cap 107 and finally applying the protective film 111.

However, according to the manufacturing process of the conventional metal oxide film resistor 101 as described above, there is a problem that the initial resistance value that can be obtained before the spiral is maintained at about 200 kV because of the low stability and reliability of the coated film.

Accordingly, if the thickness of the film is thinned to increase the resistance in the absence of spirals, another problem arises in that the temperature coefficient of the resistance increases, and thus the thermal stability is reduced, resulting in a large resistance change due to lead wire soldering or high temperature exposure. It became.

On the contrary, in the case of reducing the cutting interval of the spiral in order to increase the completion resistance while maintaining the thickness of the film having a low initial resistance value, the number of windings of the spiral is increased, resulting in poor electrical shock resistance and moisture resistance of the film. In addition, there is a problem that the work efficiency is lowered because the work time becomes longer.

The present invention has been proposed to solve the problems of the conventional metal oxide film resistor and the method of manufacturing the film, and even if the thickness of the film is thinned to increase the initial resistance value of the film, The purpose is to increase the production efficiency compared to the performance of the resistor by avoiding the deterioration of the relevant characteristic value and thus eliminating the need to narrow the cutting interval of the spiral in order to increase the finished resistance value depending on the initial resistance value. have.

1 is a cross-sectional view of a conventional resistor.

2 is a cross-sectional view of a resistor with a film made according to the method according to the invention.

3 is a block diagram schematically illustrating a resistor manufacturing system.

4-7 is a schematic sectional drawing of a resistor for demonstrating the correlation of the winding frequency of the spiral processed to a resistor film, and a completed resistance value.

* Explanation of Signs of Major Parts of Drawings *

1: Resistor 3, 3 ': Base

5: primary metal oxide film 7: secondary protective film

9: 3rd buffer film 11: Metal terminal

13: lead wire 15: silicone paint

16: cutting helix 17: clogging

19: heater 21: liquid supply

23: injector 25: air dryer

29: drive shaft

In order to achieve the above object, the present invention is applied to alumina, cordierite, mullite, forsterite, steatite, other substrates of the semiconductor as a primary coating to determine the resistance value or characteristic value; A protective film for protecting the resistance value or the characteristic value formed in the primary film without affecting the resistance value as a secondary film; And the change of resistance value or characteristic value of the primary film due to the increase of surface temperature, irregular current flow, electrical stress, moisture penetration, etc., even though the primary film becomes thin for higher resistance (higher characteristic). It provides a high-performance metal oxide film resistor having a triple film structure consisting of a buffer film that can be relaxed.

In addition, the film preparation step of maintaining the insulating base (3) made of a ceramic rod containing alumina at an appropriate temperature in the heating furnace in which the film deposition machine is installed; A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution; A coating solution 2 preparing step of forming a coating solution 2 by dissolving 5 g of tin oxide and 7 g of antimony trichloride in 50 ml of methanol and 8 g of hydrochloric acid; Coating 1 liquid coating step of applying the coating 1 liquid to the surface of the substrate; A first drying step of forming a metal oxide film on the surface of the substrate by drying the coating solution 1; Coating 2 liquid coating step of coating the coating 2 liquid on a metal oxide film; A second drying step of forming a protective film on the metal oxide film by drying the coating solution 2; Cooling step of cooling the film-coating finisher to room temperature; Tertiary drying step of forming a buffer film on the protective film; And it provides a high characteristic metal oxide film manufacturing method of the resistor consisting of a heat treatment step.

Hereinafter, a method of manufacturing a high-performance metal oxide film of a resistor according to the present invention will be described in detail with reference to the accompanying drawings.

The high-performance metal oxide film resistor provided with the film manufactured according to the method according to the present invention includes a primary film 5 and a secondary film sequentially applied to the insulating base 3, as indicated by reference numeral 1 in FIG. (7), the tertiary coating (9) or more of the coating, characterized in the configuration, and other than the metal terminal 11, which is capped at both ends of the base material 3, similar to the general metal oxide film, this metal terminal 11 The lead wire 13 welded to the both ends of (), and the silicone paint 15 apply | coated to the whole surface of the base material 3 to which the welding was completed until the lead wire 13 finally is comprised.

Here, as the insulating substrate 3, alumina-containing ceramic rods may be used, and in addition to alumina, ceramic rods containing cordierite, mullite, forsterite, steatite, and other semiconductor materials may be used.

The metal oxide film 5 applied primarily on the insulating substrate 3 serves to determine the resistance value of the resistor 1 or the characteristic value related to the resistor reliability. Materials such as iron, indium, nickel, phosphorus, zinc, cadmium or antimony are included that can effectively increase resistivity without dropping. At this time, the addition amount of the auxiliary component is an amount in which tin and cation can be mixed in a ratio of 1: 0.003 to 1: 0.15, the thickness of the film is 0.05 ~ 2㎛, maintains crystallinity, large particle size, high specific resistance It is required to have a value.

As described above, the protective film 7 applied secondly on the primary metal oxide film 5 applied on the base material 3 does not affect the resistance value of the resistor 1, but only on the metal oxide film 5. It serves to protect the formed resistance value or characteristic value. Tin oxide is used as the main material, and fluorine, phosphorus, arsenic, iron, magnesium, barium, bismuth, zinc, copper, boron, and cadmium can easily adjust the resistivity without affecting the crystal phase as an auxiliary component. , Vanadium and the like are added, and the amount of the vanadium is 1: 0.005 to 1: 0.1 by the ratio of tin and cation. At this time, the protective film 7 has a thickness of 0.005 to 0.5 µm, and should have a specific resistance smaller than the specific resistance of the metal oxide film 5 without degrading crystallinity.

As shown in Fig. 2, the buffer coating 9, which is a tertiary coating applied on the protective film 7, is used to increase the initial resistance value of the resistor 1, and thus to increase the characteristics of the resistor. ), The surface temperature of the coating film 5 rises, the current flow in the coating film 5 becomes irregular, and electrical stress is generated or moisture penetrates into the coating film 5. ), That is, to mitigate the phenomenon that the characteristic value changes.

The metal oxide film resistor 1 thus constructed is coated with coatings on the system 51 as shown in FIG. 3, which system 51 is a film forming apparatus 17 and a film forming apparatus used for film deposition as shown. A heating furnace 19 for heating 17, a liquid supplier 21 for supplying a coating liquid, an injector 23 for injecting a coating liquid, and an air dryer 25 for blowing dry air.

Here, the film-forming machine 17 is a wire mesh tube made of cylindrical stainless steel, and can put in and remove the base material 3 to be filmed, and is rotatably provided in the heating furnace 19. The heating furnace 19 is a heat-insulated steel case with a drive shaft 27 for rotational driving of the membrane 17 inside, a heater for heating inside, and an exhaust pipe for discharging waste. And other facilities to keep the atmosphere in the furnace stable. In addition, the liquid supplier 21 contains a predetermined amount of the coating liquid and supplies it to the injector 23, and the injector 23 blows the coating liquid supplied from the liquid supplier 21 in the air dryer 25. It is made to atomize and inject by the induction pressure of the air, the air dryer 25 serves to remove the moisture and foreign matter in the air supplied to the injector 23 in advance, and the induction pressure applied to the injector 23 Built-in adjustable pressure regulator. In addition, the system 51 is provided with a temperature control device, an exhaust device, an electric motor, and other controllers.

Now, referring to FIGS. 2 and 3, the method for manufacturing a film of the metal oxide film resistor according to the present invention by the system 51 as described above is as follows.

Example 1

First, as the film preparation step (S10), an appropriate amount of the insulating base material 3 made of alumina-containing ceramic rod is loaded into the film forming machine 17 in accordance with the working amount, and the film forming machine 17 is rotated in the heating furnace 19. After fixing so as to operate the various control devices to maintain the atmosphere in the furnace 19 to the working temperature of 500 ~ 800 ℃.

Into a 500 ml Erlenmeyer flask, 25 g of stannic chloride and 8 mol% of antimony trichloride were weighed in, and 50 ml of methanol and 5 ml of concentrated hydrochloric acid were weighed and dissolved to prepare and prepare a membrane 1 solution. S20).

Subsequently, 5 g of tin oxide and 7 g of antimony trichloride are mixed and dissolved in 50 ml of methanol and 8 g of hydrochloric acid in a 300 ml Erlenmeyer flask to prepare a coating solution 2 (S30).

When the preparation of the coating solution is completed, the coating solution 1 of the coating solution of the step (S20) is put into the liquid supply 21 to prepare a predetermined amount suitable for the resistance value to be obtained (P41), and the air is received from the air dryer 25 to receive the liquid. Guide film 1 is applied to the surface of the substrate 3 which is rotated by the film 17 through the injector 23 and guided to the feeder 21 (S40). At this time, the coating speed and coating amount of the coating solution 1 should be used according to the fine adjustment of the induction pressure induced by the injector 23 and the various types of injectors prepared.

After coating the coating solution 1 (S40), the coating film 17 is rotated in the heater 19 and maintained at a temperature of about 500 to 800 ° C. while the coating film 17 is dried. A metal oxide film 5 is formed in step S50.

Subsequently, the coating solution 2 prepared in step S30 is applied onto the metal oxide film 5 according to the above steps S40 to S50 (S60).

After the coating of the coating solution 2, the protective film 7 is formed on the metal oxide film 5 by drying the coating solution 2 by lowering the temperature of the heating furnace 19 to 200 to 300 ° C. for 5 to 20 minutes. S70).

Separating the coating film 17 of the coating film 1 solution and the coating film 2 solution from the heater 19 and put it in the prepared container for 2 to 3 hours while keeping in a clean place to cool the temperature to room temperature (S80), This is to minimize the damage that may occur due to a sudden temperature change on the surface of the deposited substrate 3.

Subsequently, the substrate 3 on which the primary and secondary coatings 5 and 7 are formed is dipped into an appropriate amount of solution for several minutes, followed by primary drying with hot air at 70 ° C., followed by drying at 200 ° C. for 2 hours. By forming the buffer film 9 on the film 7 (S90), damage to the film 5, thermal deformation and the like are suppressed.

Finally, the heat treatment for 10 to 30 hours at 200 ~ 350 ℃ to solve the internal stress of the film (5) produced at the time of manufacture and stabilize the crystallinity (S100).

At this time, the substrate 3 is removed to improve adhesion and density between the substrate 3 and the coating 5 by removing foreign substances on the surface generated in the substrate production process and adjusting the roughness of the substrate surface before coating the coating liquid. Rotate the aqueous solution of% hydrofluoric acid (HF) and pure water in a composition ratio of 70: 1 with dipping at room temperature for 5 to 15 minutes, and then wash with pure water again for 60 to 90 minutes and then at 200 ° C for at least 2 hours. It goes through a pretreatment process of drying and cooling (P00).

(Example 2)

According to Example 2, steps similar to those of Example 1 are followed, and the preparation of the deposition is performed in the same manner as in the deposition preparation step (S10) of Example 1.

Next, 20 g of stannic chloride and 10 mol% of antimony trichloride were dissolved in 50 ml of methanol in a 500 ml Erlenmeyer flask in the preparation of membrane 1 solution of Preparation Example 1 (S20), followed by 7 ml of concentrated hydrochloric acid. Mixing to form a coating solution 1 (S120).

Then, in the coating 2 solution preparation step (S30) of Example 1, 5 ml of tin oxide and 10 g of antimony trichloride were mixed in a 300 ml Erlenmeyer flask to 75 ml of methanol and 6 g of hydrochloric acid to form a coating 2 solution (S130).

Subsequently, according to the steps (S40 to S100) of Example 1, the coating film 1 solution and the coating film 2 solution are applied to the substrate 3 to form the coatings 5, 7, and 9 in order.

Finally, in order to solve the internal stress of the coating film 5 and stabilize the crystallinity by heat treatment as in Example 1, the treatment is performed at a temperature of 200 to 350 ° C. for 26 hours (S200).

(Example 3)

Example 3 is also prepared in accordance with the first film preparation step (S10) of Example 1 as in Example 1, and then prepare a film 1 solution according to the film 1 solution preparation step (S20).

Then, in the coating solution 2 preparation step (S30) of Example 1, a coating solution 2 was formed by mixing 8 g phosphorus chloride and 5 g antimony trichloride in 300 ml Erlenmeyer flask in 50 ml methanol and 7 g hydrochloric acid (S230). ).

Subsequently, the coating film 1 solution is applied on the base material 3 while the steps S40 to S50 of Example 1 are formed to form a metal oxide film 5, and the coating film 2 solution according to the steps S60 to S100 is applied. The coating is applied on the film 5 to form a protective film 7 and a buffer film 9 in sequence.

(Example 4)

Similarly, in Example 4, first, the film preparation preparation through the film preparation step (S10) as in Example 1. Next, according to the step (S20) of Example 1 to prepare a coating 1 solution the same as the coating 1 solution.

Next, in step S30 of Example 1, 6 g of chromium chloride and 5 g of antimony trichloride are mixed and dissolved in 50 ml of methanol and 4 g of hydrochloric acid in a 300 ml Erlenmeyer flask to form a coating solution 2 (S330).

Then, by applying the coating solution 1 on the substrate 3 while going through the steps (S40 ~ S50) of Example 1 to form a metal oxide film (5), and again according to the steps (S60 ~ S100) of Example 1 The coating solution 2 prepared in step S330 is applied on the coating 5 to form the protective coating 7 and the buffer coating 9 in sequence.

(Example 5)

Example 5 is a case of coating the coating in four layers, first, the film preparation as in step S10 of Example 1.

Then, 20 g of stannic chloride and 10 mol% of antimony trichloride were dissolved in 50 ml of methanol in a 500 ml Erlenmeyer flask in the preparation of membrane 1 solution of Preparation Example 1 (S20), followed by 7 ml of concentrated hydrochloric acid. By mixing, the same coating 1 solution as the coating 1 solution of Example 2 is formed (S420).

Subsequently, 5 g of tin oxide and 10 g of antimony trichloride were mixed with 75 ml of methanol and 6 g of hydrochloric acid in the preparation of the coating solution 2 of Example 1 (S30) to form the same coating solution 2 as the coating solution 2 of Example 2 ( S430).

Next, 45 g of stannic chloride and 21 g of phosphorus pentachloride were mixed and dissolved in 200 ml of pure water and an aqueous methanol solution at an appropriate ratio to prepare a coating solution 3 (S431). Instead of 21 g of phosphorus chloride, 6 g of antimony trichloride was mixed and dissolved to prepare a coating solution 4 (S433).

In this way, when the film 1 solution-film 4 solution is ready, repeat the steps (S40 ~ S50) of Example 1 while coating the film 1 solution-film 4 solution in order to form a four-layer coating on the substrate (3) In accordance with the steps (S60 to S100) of Example 1, a multi-layered film is obtained, and the coating of the coating films 3 and 4 formed in the steps S431 and S433 is characterized by the characteristic value of the film by using a material having a low specific resistance. To improve the quality.

(Example 6)

In Example 6, the coating film was applied in four layers, and the coating film 4 solution of the coating film used in Example 5 was replaced with the coating film 2 solution of Example 3.

That is, in the membrane preparation 4 solution preparation step (S433) of Example 5, 8 ml phosphorus chloride and 5 g antimony trichloride were mixed in a 300 ml Erlenmeyer flask to 50 ml methanol and 7 g hydrochloric acid to form a membrane 4 solution (S533). .

(Example 7)

Example 7 is a case in which the application rate, that is, the application time of the coating film 1 solution and the coating film 2 solution coating step (S40, S60) of Example 2 were changed on the basis of the same coating amount, and the same amount of each coating solution in Example 2 While the injection time is 20 minutes, in Example 7, the injection time is set to 40 minutes and applied (S640, S660).

(Example 8)

In Example 8, when the coating solution of Example 2 was formed to form the coatings (5, 7, and 9) and then the heat treatment time (S100) according to Example 1 was carried out when the heat treatment time was 12 hours (S700) In order to solve this problem, the internal stress generated in the coating film 5 is solved and the crystallinity is stabilized.

Therefore, the multi-coated resistor 1 is subjected to the above process, as shown in FIGS. 4 to 7, by cutting the spiral 16 on the coated substrate 3 'to adjust the completed resistance value. In addition, since the initial resistance value can be improved from 200 mW in FIG. 4 to 1.5 mW in FIG. 7 based on the 100 mW completed resistance value, the number of cuts of the spiral 16 can be significantly reduced in obtaining the same completed resistance value. 5 shows a case where the initial resistance value is set to 500 mA and FIG. 6 is set to an initial resistance value.

When the values such as the completed resistance values for the various initial resistance values of the coated film resistors obtained by the manufacturing methods of the above-described embodiments are shown in Table 1 below, in particular, in the case of the coated film resistors according to Example 2, Example 2-1 and Example 2-2 show the result of having obtained the completed resistance value by applying various cutting magnifications of the spiral 16 to initial stage resistance value.

type Initial resistance value Completion resistance TCR (ppm / ° C) STOL (%) LLT (%) Example 1 34056010001500 51120300510 27-56-186-293 -0.597-0.0660.0200.028 1.662.02 Example 2 6207501500 150200430 -55-91-147 0.020-0.0200.020 0.160.200.28 Example 2-1 5606801000150017002000 116016003000270029003000 -42-45-145-189-217-240 0.025-0.013-0.030-0.010-0.020-0.025 0.160.090.38 Example 2-2 10001000550550 1001600100530 -97-71-52-51 -0.2170.032-0.1360.007 0.620.081.730.86 Example 3 6208201000 120200270 -153-182-224 -0.008-0.024-0.019 3.6 Example 4 5608201000 120200270 -215-270-350 -0.100-0.038-0.031 3.4 Example 5 42010001200 36017001650 -55-275-350 -0.010-0.0100.025 3.8 Example 6 7501000 100100 -311-373 -0.270-0.438 Example 7 5007501000 100100100 -222-361-421 -0.517-0.782-0.732 Example 8 9001000 260100 -576-606

In Table 1 above, the characteristics of Example 2-1 to which approximately 300 magnification is applied and Example 2-1 to which approximately 2000 magnification is applied can be compared, and the change in the characteristic value according to the magnification ratio can be compared. The characteristic value which changes when the completion resistance value of another magnification is made is shown by Example 2-2. The change rate (LLT) is a change rate for the result after 1.5 hours on at a temperature of 70 ° C. and a rated voltage {√ (P · R)}, a test for 1000 hours while being 0.5 hours off, and then left at room temperature for 1 hour.

As described above, according to the film production method of the present invention, first, it is possible to widen the manufacturing range of the metal trioxide film resistor, and thus it is possible to manufacture an initial resistance value of 300 kW to 2 kW, which is much higher than the initial resistance value of 300 kW. In addition, it is possible to manufacture a resistor of high completion resistance up to 3 kΩ.

In addition, the cutting interval of the spirals processed on the coating becomes wider, and accordingly, the number of windings of the spiral is reduced, thereby obtaining a metal oxide film resistor exhibiting high characteristics in the electrical impact test (STOL, LLT) or the moisture resistance life test (PCT). In addition, since the work time can be drastically reduced, the work efficiency is also increased, and thus the production per hour is greatly increased, and the defective rate is reduced, resulting in a reduction in manufacturing cost.

In addition, in the examples of FIGS. 4 to 7, as a result of various characteristic tests, excellent reliability values are shown in Table 2 below, and thus, expensive metal film or metal grade products that are currently used because they do not satisfy the temperature coefficient (TCR) characteristic values are used. It can be used as a substitute for, thereby lowering the cost of all electrical and electronic products using resistors.

Initial resistance value Completion resistance STOL TCR 200 100 -0.123 -143 500 100 -0.136 -52 1000 100 -0.217 -97 1500 100 -0.430 -147

The specifications of the part reliability test applied at this time are as follows.

Short-time load (STOL) test is performed 5 times with 2.5 times of rated voltage on, 5 seconds with 45 seconds off, and then left at room temperature for 1 hour or more. However, when the test voltage exceeds the maximum overload, the maximum overload voltage is applied. (R MAX ± 2%).

When the temperature coefficient (TCR) is the resistance measured after leaving R1 at room temperature (T1) for 30 minutes, the resistance measured after leaving R2 at room temperature of 100 ° C (T2) for 30 minutes,

TCR = (R2-R1) / R2 x 10,000 (ppm / ° C)

It is the value calculated by the formula (MAX TCR ± 500 ppm / ℃).

The normal load life (LLT) test is performed after 1.5 hours on and 0.5 hours off and 1000 hours after application of rated voltage under the temperature of 70 ± 2 ℃, and it is measured after 1 hour at room temperature (R MAX ± 7%).

PCT (Pressure Cooker Test) is measured after leaving for 1 hour at the conditions of Ta = 127 ± 2 ℃, RH = 100%, 1.5G and left for 1 hour at room temperature (R MAX ± 7%).

In addition, in the current resistance resistance (ohm grade) of the super resistance value (1-2, 2-4… 150-200, 200-300 Ω), it is possible to integrate the super resistance band LOT of 100 Ω or more in accordance with the present invention. It is possible to make a complete resistance band, and thus to reduce the inventory stock, thus facilitating inventory management and efficiently managing the production process.

Claims (10)

delete An appropriate amount of the insulating base material (3) made of alumina-containing ceramic rod is charged into the film depositor 17 according to the amount of work, and the atmosphere in the heating furnace 19 in which the film depositor 17 is installed is maintained at around 500 to 800 ° C. Film preparation step (S10); A coating 1 solution preparation step of dissolving 25 g of tin chloride and 8 mol% of antimony trichloride in 50 ml of methanol and 5 ml of concentrated hydrochloric acid solution to form a coating 1 solution (S20); A coating solution 2 preparing step of forming a coating solution 2 by dissolving 5 g of tin oxide and 7 g of antimony trichloride in 50 ml of methanol and 8 g of hydrochloric acid (S30); A coating film 1 liquid applying step of charging a predetermined amount of the coating film 1 liquid appropriate to a desired resistance value into a liquid supply 21 to apply to the surface of the substrate 3 rotating in the film 17 through an injector 23. (S40); A primary drying step (S50) of forming a metal oxide film (5) on the surface of the substrate (3) by maintaining the rotation of the membrane (17) for 5 to 20 minutes to dry the membrane 1 solution; Coating film 2 solution coating step (S60) of applying the coating film 2 liquid on the metal oxide film (5) in the same manner as the coating film 1 solution coating step (S40); The second drying step of forming a protective film 7 on the metal oxide film 5 by drying the coating solution 2 by lowering the temperature of the heating furnace 19 to 200 to 300 ° C. for 5 to 20 minutes. ); Cooling step (S80) to remove the coating film 17 is completed from the heater (19) in the storage box and kept for 2 to 3 hours while the coating is completed; After dipping the base material 3 into a solution of a titration solution for several minutes, first drying with hot air at 70 ° C., and then drying again at 200 ° C. for 2 hours to form a buffer film 9 on the protective film 7. Drying step (S90); And a heat treatment step of performing a heat treatment for 10 to 30 hours at 200 to 350 ° C. (S100). The base material (3) according to claim 2, wherein the base material (3) is contained in an aqueous solution having a ratio of 55% hydrofluoric acid and pure water at a composition ratio of 70: 1 to improve adhesion and density with the metal oxide film 5 at room temperature. Rotating while dipping for 15 minutes, washing with pure water again for 60 to 90 minutes, and then going through a pretreatment step (P00) of drying for 2 hours or more at a temperature of 200 ° C. to cool the metal oxide of the resistor. Film manufacturing method. The method of claim 2, wherein 20 g of stannic chloride and 10 mol% of antimony trichloride are dissolved in 50 ml of methanol, and then mixed with 7 ml of concentrated hydrochloric acid to prepare a coating 1 solution. Creating (S120); In the coating 2 solution preparation step (S30), 5g of tin oxide and 10g of antimony trichloride are mixed with 75ml of methanol and 6g of hydrochloric acid to form a coating 2 solution (S130). Film manufacturing method. The method according to claim 2, wherein in the coating solution 2 preparing step (S30), 8g of phosphorus chloride and 5g of antimony trichloride are mixed with 50ml of methanol and 7g of hydrochloric acid to form a coating solution 2 (S230). A method for producing a high characteristic metal oxide film of a resistor. The method of claim 2, wherein in the coating solution 2 preparing step (S30), 6g of chromium chloride and 5g of antimony trichloride are mixed with 50ml of methanol and 4g of hydrochloric acid to form a coating solution 2 (S330). Method for producing a high characteristic metal oxide film of a resistor. The method of claim 2, wherein 20 g of stannic chloride and 10 mol% of antimony trichloride are dissolved in 50 ml of methanol, and then mixed with 7 ml of concentrated hydrochloric acid to prepare a coating 1 solution. Composition (S420); In the coating 2 solution preparation step (S30) by mixing 5g of tin oxide and 10g of antimony trichloride in 75ml of methanol and 6g of hydrochloric acid to form a coating 2 solution (S430); A coating solution 3 preparing step (S431) to form a coating 3 solution by mixing and dissolving 45 g of tin chlorine and 21 g of phosphorus pentachloride in an appropriate ratio of pure water and 200 ml of methanol aqueous solution (S431); and in the coating solution 3 preparing step (S431) A method for preparing a high-responsive metal oxide film for a resistor, characterized in that it further comprises a; coating film 4 liquid preparation step (S433) by mixing and dissolving 6 g of antimony trichloride instead of 21 g of phosphorus pentachloride (S433). [8] The method of claim 7, wherein the coating solution 4 is prepared by mixing 8 g of phosphorus chloride and 5 g of antimony trichloride in 50 ml of methanol and 7 g of hydrochloric acid (S533). A method for producing a high characteristic metal oxide film of a resistor. The method according to claim 4, wherein the injection time of the coating solution 1 and the coating solution 2 is doubled based on the same injection amount in the coating film 1 solution applying step (S40) and the coating film 2 solution applying step (S60) (S640). S660) A method for producing a high-performance metal oxide film of a resistor, characterized in that. The method of claim 4, wherein the heat treatment time is 12 hours in the heat treatment step (S100) (S700).