KR870005410A - 후막 도체 조성물 - Google Patents

후막 도체 조성물 Download PDF

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Publication number
KR870005410A
KR870005410A KR860009172A KR860009172A KR870005410A KR 870005410 A KR870005410 A KR 870005410A KR 860009172 A KR860009172 A KR 860009172A KR 860009172 A KR860009172 A KR 860009172A KR 870005410 A KR870005410 A KR 870005410A
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South Korea
Prior art keywords
composition
mixtures
glass
resinate
pbo
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KR860009172A
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English (en)
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KR900006014B1 (ko
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에이 크레이그 윌리암
에드워드 테일러 배리
Original Assignee
도늘드 에이 호우즈
이 아이 듀우판 디 네모아 앤드 캄파니
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Application filed by 도늘드 에이 호우즈, 이 아이 듀우판 디 네모아 앤드 캄파니 filed Critical 도늘드 에이 호우즈
Publication of KR870005410A publication Critical patent/KR870005410A/ko
Application granted granted Critical
Publication of KR900006014B1 publication Critical patent/KR900006014B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/253—Silica-free oxide glass compositions containing germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Conductive Materials (AREA)
  • Glass Compositions (AREA)
  • Powder Metallurgy (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

내용 없음

Description

후막 도체 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. A. 귀금속, 귀금속 합금 또는 이들 혼합물 60-99wt%
    B. (1) 그안에 용해된 PbO, 기본 유리 0-20pph를 갖는 일반식 Bi4Si3-xGexO12(이식에서 x=0-3이다)의 유리 100의 (2) 0-100pph의 Bi2O3, 기본 유리 및 PbO (3) 4-100pph의 ZnO, 기본 유리 및 PbO의 세분된 입자로 필수적으로 구성된 무기 결합제 40-1wt.%
    C. (1) 일반식 (MxM2-x')M"2O7-x'(이식에서 M은 M'와 다르고, Pb, Bi, Cd, Cu, Ir, Ag, Y·원자수 57-71의 회토류 금속 및 이들 혼합물중 적어도 하나로 선택되고, M'는 Pb, Bi 및 이들 혼합물로부터 선택되고, M"은 Ru, Ir, Rh 및 이들 혼합물로부터 선택되고 x-0-0.5이고, z=0-1이다)의 피로클로로-관련 산화물의 세분된 입자의 기본 고형물 0.2-10wt.% (2) (a) 귀금속 Ru, Rh, Re, Ir, Pt 및 이들 혼합물 (b) 비귀금속 Mg, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Ba, Ce, Ta, W 및 이들 혼합물로부터 선택된 금속의 수지산염의 기본 고형물 2-10wt.% 및 (1) 및 (2)의 혼합물로부터 선택된 유리 유출 저해제.
    D. 유기 매체(A-C의 모든 성분은 여기에 분산되어 있다)의 세분된 입자의 혼합물로 구성된 후막 도체 조성물.
  2. 제1항에 있ㅆ어서, NiO, CO3O4, SnO2로 부터 선택된 금속 산화물 및 그 혼합물 및 그 전구체의 기본 총고형분 0.1-0.2wt.%를 포함하는 조성물.
  3. 제1항에 있어서, 유출 저해제가 피로클로르-관련 산화물인 조성물.
  4. 제3항에 있어서, 피로클로르-관련 산화물이 Cu0-5Bi1·5Ru2O6-75인 조성물.
  5. 제3항에 있어서, 0.2-5wt.%의 피로클로르-관련 산화물을 포함하는 조성물.
  6. 제1항에 있어서, 유출 저해제가 금속 수지산염인 조성물.
  7. 제6항에 있어서, 1-5wt.%의 금속 수지산염을 포함하는 조성물.
  8. 제7항에 있어서, 그 전구체 및 NiO, CO3O4, SnO2및 혼합물로부터 선택된 금속 산화물의 기본 총고형분 0.1-2wt.%를 포함하는 조성물.
  9. 제5항에 있어서, 금속 수지산염이 귀금속 수지산염인 조성물.
  10. 제6항에 있어서, 귀금속 수지산염이 로듐 수지산염인 조성물.
  11. 제1항에 있어서, x=0인 조성물.
  12. 제1항에 있어서, x=0.1-2.9인 조성물.
  13. 제1항에 있어서, 유리의 x값이 0.2-2이고 유리가 그 안에 용해된 PbO 1-20 pph를 갖는 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009172A 1985-11-01 1986-10-31 후막 도체 조성물 KR900006014B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/794,946 US4636332A (en) 1985-11-01 1985-11-01 Thick film conductor composition
US794,946 1985-11-01
US794946 1985-11-01

Publications (2)

Publication Number Publication Date
KR870005410A true KR870005410A (ko) 1987-06-08
KR900006014B1 KR900006014B1 (ko) 1990-08-20

Family

ID=25164165

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009172A KR900006014B1 (ko) 1985-11-01 1986-10-31 후막 도체 조성물

Country Status (8)

Country Link
US (1) US4636332A (ko)
EP (1) EP0222259B1 (ko)
JP (1) JPS62108406A (ko)
KR (1) KR900006014B1 (ko)
CA (1) CA1288238C (ko)
DE (1) DE3650210T2 (ko)
DK (1) DK521886A (ko)
IE (1) IE862875L (ko)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8717920D0 (en) * 1987-07-29 1987-09-03 Era Patents Ltd Thick film ink
US5001598A (en) * 1989-04-20 1991-03-19 Engelhard Corporation Sinter control additive
US5075262A (en) * 1990-02-21 1991-12-24 Johnson Matthey, Inc. Silver-glass pastes
US5162062A (en) * 1991-06-17 1992-11-10 E. I. Du Pont De Nemours And Company Method for making multilayer electronic circuits
US5422190A (en) * 1993-01-22 1995-06-06 Ferro Corporation Via fill paste and method of using the same containing specific amounts of silver, gold and refractory oxides
DE4414270C2 (de) * 1994-04-23 1998-12-03 Manfred Neuberger Verfahren zur Herstellung von Transferdruckpapieren
US5518663A (en) * 1994-12-06 1996-05-21 E. I. Du Pont De Nemours And Company Thick film conductor compositions with improved adhesion
JP3019139B2 (ja) * 1995-03-30 2000-03-13 株式会社住友金属エレクトロデバイス 導電性ペースト及びそれを用いたセラミック回路基板
TW312045B (en) 1995-04-25 1997-08-01 Texas Instruments Inc Radiant chamber and method for lid seal in ceramic packaging
US6146743A (en) * 1997-02-21 2000-11-14 Medtronic, Inc. Barrier metallization in ceramic substrate for implantable medical devices
US5855995A (en) * 1997-02-21 1999-01-05 Medtronic, Inc. Ceramic substrate for implantable medical devices
US6226452B1 (en) 1997-05-19 2001-05-01 Texas Instruments Incorporated Radiant chamber for simultaneous rapid die attach and lead frame embed for ceramic packaging
JP2001135138A (ja) * 1999-10-29 2001-05-18 Matsushita Electric Ind Co Ltd 導体ペースト
IL140990A0 (en) * 2001-01-18 2002-02-10 Univ Ben Gurion Thick film compositions containing pyrochlore-related compounds
JP2002362987A (ja) * 2001-06-08 2002-12-18 Hitachi Ltd 電子部品およびその製造方法
US7261841B2 (en) * 2003-11-19 2007-08-28 E. I. Du Pont De Nemours And Company Thick film conductor case compositions for LTCC tape
US7731812B2 (en) * 2004-10-19 2010-06-08 E.I. Du Pont De Nemours And Company Thick film conductor case compositions for LTCC tape
US7054137B1 (en) 2004-11-29 2006-05-30 Kemet Electronic Corporation Refractory metal nickel electrodes for capacitors
US7277269B2 (en) * 2004-11-29 2007-10-02 Kemet Electronics Corporation Refractory metal nickel electrodes for capacitors
US20080176103A1 (en) * 2005-03-28 2008-07-24 Ngk Insulators, Ltd. Conductive Paste and Electronic Parts
JP2006324637A (ja) * 2005-04-21 2006-11-30 Tdk Corp 共材粒子、その製造方法、電極ペースト、電子部品の製造方法
JP2007194580A (ja) 2005-12-21 2007-08-02 E I Du Pont De Nemours & Co 太陽電池電極用ペースト
US20070253140A1 (en) * 2006-04-28 2007-11-01 Randall Michael S Base metal electrode multilayer capacitor with localized oxidizing source
CN102011187B (zh) * 2010-12-28 2012-11-21 上海应用技术学院 硅锗酸铋混晶及其制备方法
US20130186463A1 (en) * 2011-12-06 2013-07-25 E I Du Pont De Nemours And Company Conductive silver paste for a metal-wrap-through silicon solar cell
US9892816B2 (en) * 2013-06-27 2018-02-13 Heraeus Precious Metals North America Conshohocken Llc Platinum containing conductive paste

Family Cites Families (13)

* Cited by examiner, † Cited by third party
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US4090009A (en) * 1977-03-11 1978-05-16 E. I. Du Pont De Nemours And Company Novel silver compositions
US4160227A (en) * 1977-03-18 1979-07-03 Hitachi, Ltd. Thermistor composition and thick film thermistor
JPS5837963B2 (ja) * 1977-07-09 1983-08-19 住友金属鉱山株式会社 抵抗体用ペ−ストの製造方法
US4124539A (en) * 1977-12-02 1978-11-07 Exxon Research & Engineering Co. Pb2 [M2-x Pbx ]O7-y compounds wherein M is Ru, Ir or mixtures thereof, and method of preparation
US4302362A (en) * 1979-01-23 1981-11-24 E. I. Du Pont De Nemours And Company Stable pyrochlore resistor compositions
US4414143A (en) * 1981-05-06 1983-11-08 E. I. Du Pont De Nemours & Co. Conductor compositions
US4362656A (en) * 1981-07-24 1982-12-07 E. I. Du Pont De Nemours And Company Thick film resistor compositions
US4394171A (en) * 1981-08-03 1983-07-19 E. I. Du Pont De Nemours And Company Thick film conductor compositions
US4381945A (en) * 1981-08-03 1983-05-03 E. I. Du Pont De Nemours And Company Thick film conductor compositions
US4536329A (en) * 1983-12-19 1985-08-20 E. I. Du Pont De Nemours And Company Borosilicate glass compositions
JPS60145949A (ja) * 1984-01-06 1985-08-01 昭栄化学工業株式会社 抵抗組成物
US4536328A (en) * 1984-05-30 1985-08-20 Heraeus Cermalloy, Inc. Electrical resistance compositions and methods of making the same
US4532075A (en) * 1984-08-10 1985-07-30 E. I. Du Pont De Nemours And Company Thick film conductor composition

Also Published As

Publication number Publication date
DK521886D0 (da) 1986-10-31
US4636332A (en) 1987-01-13
EP0222259A2 (en) 1987-05-20
JPH0411961B2 (ko) 1992-03-03
DK521886A (da) 1987-05-02
CA1288238C (en) 1991-09-03
IE862875L (en) 1987-05-01
EP0222259A3 (en) 1988-08-24
EP0222259B1 (en) 1995-01-18
DE3650210D1 (de) 1995-03-02
KR900006014B1 (ko) 1990-08-20
JPS62108406A (ja) 1987-05-19
DE3650210T2 (de) 1995-06-29

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