KR870000751A - 절연페이스트 및 그 제조방법 - Google Patents

절연페이스트 및 그 제조방법 Download PDF

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Publication number
KR870000751A
KR870000751A KR1019860004728A KR860004728A KR870000751A KR 870000751 A KR870000751 A KR 870000751A KR 1019860004728 A KR1019860004728 A KR 1019860004728A KR 860004728 A KR860004728 A KR 860004728A KR 870000751 A KR870000751 A KR 870000751A
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weight
glass
ceramic
sio
range
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KR1019860004728A
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KR900002303B1 (ko
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사도루 유하꾸
세이이씨 다까다니
세이이찌 다까다니
쓰도무 니시무라
도오루 이시다
Original Assignee
마쓰시다덴가산교 가부시기가이샤
다니이 아끼오
마쯔시다 덴기산교 가부시기 가이샤
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Priority claimed from JP13110185A external-priority patent/JPH0644403B2/ja
Priority claimed from JP60140804A external-priority patent/JPS622406A/ja
Application filed by 마쓰시다덴가산교 가부시기가이샤, 다니이 아끼오, 마쯔시다 덴기산교 가부시기 가이샤 filed Critical 마쓰시다덴가산교 가부시기가이샤
Publication of KR870000751A publication Critical patent/KR870000751A/ko
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Publication of KR900002303B1 publication Critical patent/KR900002303B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Glass Compositions (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

내용 없음.

Description

절연페이스트 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (11)

  1. AlO2,3SiO2, CaO 및 MgO로 조성된 세라믹과 붕소화규산염유리로 이루어진 무기성분을 포함하고, 유리에 대한 세라믹의 중량비가 40/60내지 60/40인 것을 특징으로 하는 절연페이스트.
  2. 제1항에 있어서, 세라믹 조성은 Al2O3가 90내지 98중량%, SiO2가 1내지 5중량%, CaO가 0.2내지 2중량%, MgO가 0.5내지 4중량% 범위내에 있고, 총중량이 100%가 되는 것을 특징으로 하는 절연페이스트.
  3. 제1항에 있어서, 분소화규산염유리의 조성은 SiO2가 60내지 90중량%, B2O3가 5내지 30중량%, Al2O3가 0.1내지 10중량%, BaO가 0.1내지 10중량%, M2O(M은 알카리금속)가 0.01내지 6중량% 범위내에 있고 총중량이 100%가 되는 것을 특징으로 하는 절연페이스트.
  4. 제1항에 있어서, 세라믹조성은 Al2O3가 90내지 98중량%, SiO2가 1내지 5중량%, CaO가 0.2내지 2중량%, MgO가 0.5내지 4중량% 범위내에 있고, 그 총중량이 100%가 되고, 붕소화규산염유리의 조성은 SiO2가 60내지 90중량%, B2O3가 5내지 30중량%, Al2O3가 0.1내지 10중량%, BaO가 0.1내지 10중량%, M2O(M은 알카리금속)가 0.01내지 6중량% 범위내에 있고, 그 총중량이 100%가 되는 것을 특징으로 하는 절연 페이스트.
  5. 세라믹과 유리로 구성뫼는 무기성분은 유리의 일부를 세라믹과 혼합하고, 그 혼합물을 소성온도 이상의 고온에서 하소하고, 잔여유리를 하소생성물에 첨가 및 혼합하여서 되는 것을 특징으로 하는 절연페이스트의 제조방법.
  6. 제5항에 있어서, 상기 유리는 붕소화규산염유리인 것을 특징으로 하는 절연페이스트의 제조방법.
  7. 제5항에 있어서, 유리에 대한 세라믹의 혼합중량비는 40/60내지 60/40인 것을 특징으로 하는 절연페이스트의 제조방법.
  8. 제5항에 있어서, 세라믹과 예비혼합 및 하소시킬 유리의 중량비는 2내지 40중량% 범위내에 있는 것을 특징으로 하는 절연페이스트의 제조방법.
  9. 제5항에 있어서, 세라믹조성은 Al2O3가 90내지 98중량%, SiO2가 1내지 5중량%, CaO가 0.2내지 2중량%, MgO가 0.5내지 4중량% 범위내에 있고, 총중량이 100%가 되는 것을 특징으로 하는 절연페이스트 제조방법.
  10. 제5항에 있어서, 유리조성은 SiO2가 60내지 90중량%, B2O3가 5내지 30중량%, Al2O3가 0.1내지 10중량%, BaO가 0.1내지 10중량%, M2O(M은 알카리금속)가 0.01내지 6중량% 범위내에 있고, 총중량이 100%가 되는 것을 특징으로 하는 절연페이스트의 제조방법.
  11. 제5항에 있어서, 세라믹조성은 Al2O3가 90내지 98중량%, SiO2가 1내지 5중량%, CaO가 0.2내지 2중량%, MgO가 0.5내지 4중량% 범위내에 있고, 그 총중량이 100%가 되고, 유리조성은 SiO2가 60내지 90중량%, B2O3가 5내지 30중량%, Al2O3가 0.1내지 10중량%, M2O(M은 알카리금속)가 0.01내지 6중량% 범위내에 있고, 그 총중량이 100%가 되는 것을 특징으로 하는 절연페이스트의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004728A 1985-06-17 1986-06-14 절연페이스트 및 그 제조방법 KR900002303B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13110185A JPH0644403B2 (ja) 1985-06-17 1985-06-17 セラミツク配線基板用絶縁混練物の製造法
JP131101 1985-06-17
JP60140804A JPS622406A (ja) 1985-06-27 1985-06-27 多層基板用絶縁ペ−スト
JP140804 1985-06-27

Publications (2)

Publication Number Publication Date
KR870000751A true KR870000751A (ko) 1987-02-20
KR900002303B1 KR900002303B1 (ko) 1990-04-10

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US (1) US4812422A (ko)
KR (1) KR900002303B1 (ko)

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JPH0728128B2 (ja) * 1988-03-11 1995-03-29 松下電器産業株式会社 セラミック多層配線基板とその製造方法
JP3067580B2 (ja) * 1995-04-04 2000-07-17 株式会社村田製作所 絶縁ペースト及びそれを用いた厚膜印刷多層回路
JPH0986955A (ja) * 1995-09-29 1997-03-31 Murata Mfg Co Ltd 絶縁体用ガラス組成物、絶縁体ペースト、および厚膜印刷回路
JP3473353B2 (ja) * 1997-10-17 2003-12-02 株式会社村田製作所 絶縁体ペースト
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CN101538119B (zh) 2001-08-02 2013-07-24 3M创新有限公司 从玻璃制备制品的方法以及所制备的玻璃陶瓷制品
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US7811496B2 (en) * 2003-02-05 2010-10-12 3M Innovative Properties Company Methods of making ceramic particles
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US7258707B2 (en) * 2003-02-05 2007-08-21 3M Innovative Properties Company AI2O3-La2O3-Y2O3-MgO ceramics, and methods of making the same
US7175786B2 (en) * 2003-02-05 2007-02-13 3M Innovative Properties Co. Methods of making Al2O3-SiO2 ceramics
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US7292766B2 (en) * 2003-04-28 2007-11-06 3M Innovative Properties Company Use of glasses containing rare earth oxide, alumina, and zirconia and dopant in optical waveguides
US7197896B2 (en) * 2003-09-05 2007-04-03 3M Innovative Properties Company Methods of making Al2O3-SiO2 ceramics
US7141522B2 (en) * 2003-09-18 2006-11-28 3M Innovative Properties Company Ceramics comprising Al2O3, Y2O3, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same
US7141523B2 (en) * 2003-09-18 2006-11-28 3M Innovative Properties Company Ceramics comprising Al2O3, REO, ZrO2 and/or HfO2, and Nb2O5 and/or Ta2O5 and methods of making the same
US7297171B2 (en) * 2003-09-18 2007-11-20 3M Innovative Properties Company Methods of making ceramics comprising Al2O3, REO, ZrO2 and/or HfO2 and Nb205 and/or Ta2O5
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US4812422A (en) 1989-03-14
KR900002303B1 (ko) 1990-04-10

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