KR860006140A - 바라스형 반도체 발광소자 - Google Patents
바라스형 반도체 발광소자Info
- Publication number
- KR860006140A KR860006140A KR1019850004258A KR850004258A KR860006140A KR 860006140 A KR860006140 A KR 860006140A KR 1019850004258 A KR1019850004258 A KR 1019850004258A KR 850004258 A KR850004258 A KR 850004258A KR 860006140 A KR860006140 A KR 860006140A
- Authority
- KR
- South Korea
- Prior art keywords
- baras
- light emitting
- emitting device
- type semiconductor
- semiconductor light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60-16789 | 1985-01-31 | ||
| JP1678985A JPH0738458B2 (ja) | 1985-01-31 | 1985-01-31 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860006140A true KR860006140A (ko) | 1986-08-18 |
| KR890004478B1 KR890004478B1 (ko) | 1989-11-04 |
Family
ID=11925942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850004258A KR890004478B1 (ko) | 1985-01-31 | 1985-06-15 | 바라스형 반도체 발광소자 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0738458B2 (ko) |
| KR (1) | KR890004478B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6435968A (en) * | 1987-07-30 | 1989-02-07 | Mitsubishi Monsanto Chem | Gallium arsenide/aluminum mixed crystal epitaxial wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS557714A (en) * | 1978-06-30 | 1980-01-19 | Fujitsu Ltd | Luminous flux corrector |
-
1985
- 1985-01-31 JP JP1678985A patent/JPH0738458B2/ja not_active Expired - Fee Related
- 1985-06-15 KR KR1019850004258A patent/KR890004478B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61176172A (ja) | 1986-08-07 |
| JPH0738458B2 (ja) | 1995-04-26 |
| KR890004478B1 (ko) | 1989-11-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20041101 Year of fee payment: 16 |
|
| EXPY | Expiration of term |