KR850003104A - 표면상에 금속을 침착시키는 방법 - Google Patents

표면상에 금속을 침착시키는 방법 Download PDF

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KR850003104A
KR850003104A KR1019840004844A KR840004844A KR850003104A KR 850003104 A KR850003104 A KR 850003104A KR 1019840004844 A KR1019840004844 A KR 1019840004844A KR 840004844 A KR840004844 A KR 840004844A KR 850003104 A KR850003104 A KR 850003104A
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fixer
concentration
reducing compound
sensitive
light
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KR1019840004844A
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KR890003347B1 (ko
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텡(외 1) 유-링
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원본 미기재
콜모겐 테크놀러지스 코오포레이션
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
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    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/22—Roughening, e.g. by etching
    • C23C18/24—Roughening, e.g. by etching using acid aqueous solutions

Abstract

내용 없음

Description

표면상에 금속을 침착시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (19)

  1. 퀴논, 벤조퀴논, 안트라퀴논 및 그의 유도체, 안트라퀴논 디설폰산 및 그의 염으로 부터 선택된 광복사에 민감한 환원성 화합물 및 비귀금속의 환원가능한 염으로 구성되는 용액으로 기판을 처리하고, 처리된 기판을 광복사 에너지에 노출시켜 상기 금속염을 환원시킴으로써 실상(real image)을 형성시키고, 이 기판을 무전해 금속침착욕내에 침지시킴으로써 상기 실상의 상부에 전도성 금속패턴을 침착시키는 것으로 거성되는 전도성 금속패턴을 제조하기 위한 방법에 있어서, 금속을 무전해 침착시키기 전에 상기 비귀금속에 대한 착화제로 이루어진 정착액으로 상기 노출된 기판을 처리하고, 이 정착액내의 상기 광에 민감한 환원성 화합물의 농도가 0.4밀리몰/리터를 초과하지 않도록 정착액을 유지시키는 것으로 구성됨을 특징으로 하는, 전도성 금속패턴을 제조하는 방법.
  2. 제1항에 있어서, 상기 광에 민감한 환원성 화합물의 농도가 0,4밀리몰/리터에 접근할 때에 상기 정착액을 탄소처리함으로써 이 환원성화합물의 농도를 유지시키는 방법.
  3. 제2항에 있어서, 상기 광에 민감한 환원성 화합물의 농도가 0.15밀리몰/리터에 접근할 때에 상기 정착액을 탄소처리함으로써 이 환원성 화합물의 농도를 유지시키는 방법.
  4. 제1항에 있어서, 분광광도 분석에 의해 측정된 상기 광에 민감한 환원성 화합물의 농도가 0.4밀리몰/리터에 접근할 때에 상기 정착액을 탄소처리함으로써 이 환원성 화합물의 농도를 유지시키는 방법.
  5. 제4항에 있어서, 상기 광에 민감한 환원성 화합물의 농도가 0.15밀리몰/리터에 접근할 때에 상기 정착액을 탄소처리함으로써 이 환원성 화합물의 농도를 유지시키는 방법.
  6. 제1항에 있어서, 상기 정착액을 연속적으로 탄소처리함으로써 상기 광에 민감한 환원성 화합물의 농도를 유지시키는 방법.
  7. 제6항에 있어서, 상기 정착액내의 상기 광에 민감한 환원성 화합물의 농도를 0.05밀리몰/리터 혹은 그 이하로 유지시키는 방법.
  8. 제1항에 있어서, 상기 비귀금속의 한원가능한 염이 구리, 철, 니켈코발트의 환원가능한 염으로 구성되는 군으로 부터 선택되는 방법.
  9. 제1항에 있어서, 상기 광복사에 민감한 환원성 화합물이 안트라퀴 논디-2,6-설폰산의 2나트륨염 및 안트라퀴논-2,7-디설폰산의 2나트륨염으로 부터 선택된 안트라퀴논 디설폰산염인 방법.
  10. 제1항에 있어서, 상기 착화제가 에틸렌디아민테트라아세트산(EDTA), 에틸렌디니트릴로테트라-2-프로판올(EDTP), 능금산, 말레산, 구연산, 타르타르산 및 트리에탄올아민으로 부터 선택되는 방법.
  11. 제4항에 있어서, 상기 탄소처리는 처리된 정착액을 공정도중에 재순환시키는 연속적인 방식으로 행하여지는 방법.
  12. 제4항에 있어서, 상기 탄소가 황산과의 처리에 의해 재생되는 방법.
  13. 제4항에 있어서, 상기 탄소가 과황산나트륨과의 처리에 의해 재생되는 방법.
  14. 퀴논, 벤조퀴논, 안트라퀴논 및 그의 유도체, 안트라퀴논 디설폰산 및 그의 염으로 부터 선택된 광복사에 민감한 환원제 및 비귀금속의 환원가능한 염으로 구성되는 용액으로 지판을 처리하고, 처리된 기판을 광복사에너지에 노출시켜 상기 금속염을 환원시킴으로써 신상을 형성시키고, 이 기판을 무전해 금속 침착염내에 침지시킴으로써 상기 실상의 상부에 전도성 금속패턴을 침착시키는 것으로 구성되는 전도성 금속패턴을 제조하기 위한 방법에 있어서, 금속을 무전해 침착시키기 저에 상기 비귀금속에 대한 착화제 및 환원제로 이루어진 정착액으로 상기 노출된 기판을 처리하고, 이 정착액내의 상기 광에 민감한 환원성 화합물의 농도가 0.4밀리몰/리터를 초과하지 않도록 정착액을 유지시키는 것으로 구성됨을 특징으로 하는, 전도성 금속패턴을 제조하는 방법.
  15. 제14항에 있어서, 상기 정착액내의 상기 광에 민감한 환원성 화합물의 농도가 0.15밀리몰/리터를 초과하지 않는 방법.
  16. 제15항에 있어서, 상기 정착액내에 상기 광에 민감한 환원성 화합물의 농도가 0.05밀리몰/리터를 초과하지 않는 방법.
  17. 제14항에 있어서, 상기 환원제가 포름알데히드 및 아스코르브산으로 부터 선택되는 방법.
  18. 제17항에 있어서, 상기 환원제가 포름알데히드로 이루어지는 방법.
  19. 제17항에 있어서, 상기 환원제가 아스코르브산으로 이루어지는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840004844A 1983-10-12 1984-08-13 표면상에 금속을 침착시키는 방법 KR890003347B1 (ko)

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US06/541,048 US4511597A (en) 1983-10-12 1983-10-12 Method for depositing a metal on a surface

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EP0142025A3 (en) 1987-04-22
ZA845750B (en) 1985-03-27
CA1224957A (en) 1987-08-04
JPS6082672A (ja) 1985-05-10
IN160742B (ko) 1987-08-01
EP0142025A2 (en) 1985-05-22
JPH0142351B2 (ko) 1989-09-12
EP0142025B1 (en) 1990-01-03

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