KR840001602B1 - 양성-작용성 감광 조성물 - Google Patents

양성-작용성 감광 조성물 Download PDF

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Publication number
KR840001602B1
KR840001602B1 KR1019810002253A KR810002253A KR840001602B1 KR 840001602 B1 KR840001602 B1 KR 840001602B1 KR 1019810002253 A KR1019810002253 A KR 1019810002253A KR 810002253 A KR810002253 A KR 810002253A KR 840001602 B1 KR840001602 B1 KR 840001602B1
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KR
South Korea
Prior art keywords
weight
layer
parts
resins
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
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KR1019810002253A
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English (en)
Korean (ko)
Inventor
루커트 한스
부르 게르하르트
스테판 하르트무트
Original Assignee
홱스트 아크티엔게젤샤프트
빌리 베를라우퍼
빈프리트 게르만
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Application filed by 홱스트 아크티엔게젤샤프트, 빌리 베를라우퍼, 빈프리트 게르만 filed Critical 홱스트 아크티엔게젤샤프트
Application granted granted Critical
Publication of KR840001602B1 publication Critical patent/KR840001602B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S522/00—Synthetic resins or natural rubbers -- part of the class 520 series
    • Y10S522/904—Monomer or polymer contains initiating group

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1019810002253A 1980-06-21 1981-06-20 양성-작용성 감광 조성물 Expired KR840001602B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19803023201 DE3023201A1 (de) 1980-06-21 1980-06-21 Positiv arbeitendes strahlungsempfindliches gemisch
DE3023201.0 1980-06-21

Publications (1)

Publication Number Publication Date
KR840001602B1 true KR840001602B1 (ko) 1984-10-11

Family

ID=6105078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810002253A Expired KR840001602B1 (ko) 1980-06-21 1981-06-20 양성-작용성 감광 조성물

Country Status (10)

Country Link
US (1) US4506003A (enExample)
EP (1) EP0042562B1 (enExample)
JP (1) JPS5737349A (enExample)
KR (1) KR840001602B1 (enExample)
AT (1) ATE13729T1 (enExample)
CA (1) CA1235831A (enExample)
DE (2) DE3023201A1 (enExample)
HK (1) HK76585A (enExample)
MY (1) MY8600248A (enExample)
ZA (1) ZA814176B (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608100A (ja) * 1983-06-28 1985-01-16 旭化成株式会社 吹き付け食刻方法
DE3337024A1 (de) * 1983-10-12 1985-04-25 Hoechst Ag, 6230 Frankfurt Lichtempfindliche, trichlormethylgruppen aufweisende verbindungen, verfahren zu ihrer herstellung und diese verbindungen enthaltendes lichtempfindliches gemisch
US4544466A (en) * 1983-12-06 1985-10-01 Phillips Petroleum Company Process of making U.V. cured polyurethanes using diazonium salt promoters
DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
DE3421160A1 (de) * 1984-06-07 1985-12-12 Hoechst Ag, 6230 Frankfurt Positiv arbeitende strahlungsempfindliche beschichtungsloesung
EP0164083B1 (de) * 1984-06-07 1991-05-02 Hoechst Aktiengesellschaft Positiv arbeitende strahlungsempfindliche Beschichtungslösung
US4571373A (en) * 1984-06-11 1986-02-18 Minnesota Mining And Manufacturing Company Exposure latitude improvement in printing positive-acting color pre-press proofs
JPH0650392B2 (ja) * 1985-07-12 1994-06-29 富士写真フイルム株式会社 感光性平版印刷版の製造方法
DE3528929A1 (de) * 1985-08-13 1987-02-26 Hoechst Ag Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern
DE3662341D1 (en) * 1985-10-07 1989-04-20 Interatom Casting head for a liquid metal metering apparatus, and method for using it
DE3537441A1 (de) * 1985-10-22 1987-04-23 Hoechst Ag Loesemittel zum entfernen von photoresists
DE3541534A1 (de) * 1985-11-25 1987-05-27 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
EP0249139B2 (en) * 1986-06-13 1998-03-11 MicroSi, Inc. (a Delaware corporation) Resist compositions and use
DE3621376A1 (de) * 1986-06-26 1988-01-07 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
MY103006A (en) * 1987-03-30 1993-03-31 Microsi Inc Photoresist compositions
DE3716848A1 (de) * 1987-05-20 1988-12-01 Hoechst Ag Verfahren zur bebilderung lichtempfindlichen materials
DE3725741A1 (de) * 1987-08-04 1989-02-16 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
DE3729035A1 (de) * 1987-08-31 1989-03-09 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes photolithographisches aufzeichnungsmaterial
DE3737734A1 (de) * 1987-11-06 1989-05-18 Hoechst Ag Strahlungsempfindliches gemisch
DE3827901A1 (de) * 1988-08-17 1990-02-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
JPH0480758A (ja) * 1990-07-23 1992-03-13 Fuji Photo Film Co Ltd 感光性組成物
DE4125723A1 (de) * 1991-08-02 1993-02-04 Hoechst Ag Verfahren zur herstellung eines mehrfarbenbilds und lichtempfindliches material zur durchfuehrung dieses verfahrens
US5364738A (en) * 1991-10-07 1994-11-15 Fuji Photo Film Co., Ltd. Light-sensitive composition
DE4243253A1 (de) * 1992-12-19 1994-06-23 Hoechst Ag Lichtempfindliches Material und Verfahren zur Herstellung von Farbprüffolien
DE4432294A1 (de) * 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
US5858605A (en) * 1997-03-08 1999-01-12 Shipley Company, L.L.C. Acid labile photoactive composition
US6451505B1 (en) 2000-08-04 2002-09-17 Kodak Polychrome Graphics Llc Imageable element and method of preparation thereof
DE10105278A1 (de) * 2001-02-02 2002-08-08 Basf Ag Klebstoffe, enthaltend Polyvinylalkylether
TW548518B (en) * 2001-06-15 2003-08-21 Shinetsu Chemical Co Resist material and patterning process
CN100535749C (zh) 2002-10-23 2009-09-02 Az电子材料（日本）株式会社 化学增强正性光敏树脂组合物
JP4440600B2 (ja) * 2003-10-31 2010-03-24 Ａｚエレクトロニックマテリアルズ株式会社 厚膜および超厚膜対応化学増幅型感光性樹脂組成物
US8846195B2 (en) * 2005-07-22 2014-09-30 Canon Nanotechnologies, Inc. Ultra-thin polymeric adhesion layer
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8808808B2 (en) * 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
JP2007029152A (ja) * 2005-07-22 2007-02-08 Takano Co Ltd 張り材の取付構造
US8361546B2 (en) * 2008-10-30 2013-01-29 Molecular Imprints, Inc. Facilitating adhesion between substrate and patterned layer
DE102009019745A1 (de) * 2009-05-02 2010-11-11 Karlsruher Institut für Technologie Verfahren zur Strukturierung einer Schicht aus Silikon und Verwendung einer hierfür entwickelten Mischung
US20110165412A1 (en) * 2009-11-24 2011-07-07 Molecular Imprints, Inc. Adhesion layers in nanoimprint lithograhy

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3634082A (en) * 1967-07-07 1972-01-11 Shipley Co Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
DE2236941C3 (de) * 1972-07-27 1982-03-25 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Aufzeichnungsmaterial
US3917483A (en) * 1973-11-01 1975-11-04 Xerox Corp Photoinduced acid catalyzed depolymerization of degradable polymers
CH621416A5 (enExample) * 1975-03-27 1981-01-30 Hoechst Ag
DE2617088A1 (de) * 1975-04-29 1976-11-11 Hoechst Co American Lichtempfindliche kopiermasse
US4189320A (en) * 1975-04-29 1980-02-19 American Hoechst Corporation Light-sensitive o-quinone diazide compositions and photographic reproduction processes and structures
US4148654A (en) * 1976-07-22 1979-04-10 Oddi Michael J Positive acting photoresist comprising diazide ester, novolak resin and rosin
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
US4189323A (en) * 1977-04-25 1980-02-19 Hoechst Aktiengesellschaft Radiation-sensitive copying composition

Also Published As

Publication number Publication date
EP0042562A3 (en) 1982-11-17
DE3023201A1 (de) 1982-01-07
MY8600248A (en) 1986-12-31
DE3170823D1 (en) 1985-07-11
EP0042562B1 (de) 1985-06-05
ZA814176B (en) 1982-07-28
US4506003A (en) 1985-03-19
JPS5737349A (en) 1982-03-01
CA1235831A (en) 1988-04-26
ATE13729T1 (de) 1985-06-15
JPH0143940B2 (enExample) 1989-09-25
HK76585A (en) 1985-10-18
EP0042562A2 (de) 1981-12-30

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19810620

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