KR830009649A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device Download PDF

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Publication number
KR830009649A
KR830009649A KR1019820001006A KR820001006A KR830009649A KR 830009649 A KR830009649 A KR 830009649A KR 1019820001006 A KR1019820001006 A KR 1019820001006A KR 820001006 A KR820001006 A KR 820001006A KR 830009649 A KR830009649 A KR 830009649A
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South Korea
Prior art keywords
integrated circuit
semiconductor
resin
circuit device
film
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KR1019820001006A
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Korean (ko)
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도끼오 가또오
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미다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR830009649A publication Critical patent/KR830009649A/en

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

내용 없음No content

Description

반도체 집적회로장치Semiconductor integrated circuit device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본원 발명에 의한 반도체 집적회로 장치에 있어서의 반도체 칩의 일부 단면도.1 is a partial cross-sectional view of a semiconductor chip in a semiconductor integrated circuit device according to the present invention.

제2도는 제1도에 표시된 반도체 칩을 수지봉지해서 완성된 본원 발명에 의한 수지봉지형 반도체 집적회로 장치의 개략 단면도.FIG. 2 is a schematic cross-sectional view of the resin encapsulated semiconductor integrated circuit device according to the present invention, which is completed by resin encapsulating the semiconductor chip shown in FIG.

Claims (8)

반도체 기체의 일주면상에 형성된 폴리머인 제1의 막과, 그 제1의 막표면에 형성된 반도체 또는 다른 금속불순물을 함유하는 금속배선층으로 이루어진 반도체 장치.A semiconductor device comprising a first wiring film, which is a polymer formed on one surface of a semiconductor substrate, and a metal wiring layer containing a semiconductor or other metal impurities formed on the first film surface. 제1의 막은 폴리이미드계 수지로 이루어진 특허청구의 범위 1기재의 반도체장치.The semiconductor device according to claim 1, wherein the first film is made of a polyimide resin. 반도체 기체의 일주면상에 형성된 폴리머인 제1의 막과, 그 제1의 막표면에 형성된 반도체 또는 다른 금속 불순물을 함유하는 금속배선층으로 구성된 반도체 장치와, 그 반도체 장치를 봉지하는 수지체로 이루어진 수지봉지형 반도체 장치.A resin comprising a semiconductor device comprising a first film, which is a polymer formed on one surface of a semiconductor substrate, a metal wiring layer containing a semiconductor or other metal impurities formed on the first film surface thereof, and a resin body encapsulating the semiconductor device. Encapsulated semiconductor device. 반도체 기판의 주표면을 덮는 제1의 절연막상에 형성된 배선용의 제1의 도체층과, 그 위를 덮어서 퍼지는 제2의 절연막상에 형성된 배선용의 제2의 도체층을 가지며, 그 외측을 수지체에 의해 봉지해서 이루어진 수지봉지형 반도체 집적회로 장치에 있어서, 상기 제2의 절연막은 폴리이미드계수지인 동시에, 상기 제2의 도체층은 알루미늄을 주성분으로하여, 그것에 실리콘, 니켈 및 붕소중에서 선택된 최소한 1종의 재료가 첨가되어서 이루어진 합금층인 것을 특징으로 하는 수지봉지형 반도체 집적회로 장치.It has a 1st conductor layer for wiring formed on the 1st insulating film which covers the main surface of a semiconductor substrate, and the 2nd conductor layer for wiring formed on the 2nd insulating film which spreads over and spreads on the outer side, The outer side is a resin body. A resin-encapsulated semiconductor integrated circuit device which is encapsulated by means of the present invention, wherein the second insulating film is a polyimide resin and the second conductor layer contains aluminum as a main component and at least one selected from silicon, nickel and boron. A resin-encapsulated semiconductor integrated circuit device, characterized in that the alloy layer is formed by adding a seed material. 상기 수지체와 상기 제2의 도체층과의 사이에 제3의 절연막으로서 폴리이미드계 수지막을 갖는 것을 특징으로 하는 특허청구의 범위 4기재의 수지봉지형 반도체 집적회로 장치.A resin-encapsulated semiconductor integrated circuit device according to claim 4, wherein a polyimide resin film is provided as a third insulating film between the resin body and the second conductor layer. 상기 폴리이미드계수지는 4,4′-디아미노디페닐에에테르-3-카르본아미드, 4,4′-디아미노디페닐에에테르, 무수피로메티트산, 3,3′,4,4′ 벤조페논 테트라카르본산 2무수물로 이루어진 것을 특징으로 하는 특허청구의 범위 4 또는 5기재의 반도체 집적회로 장치.The polyimide resin is 4,4'-diaminodiphenylether-3-carbonamide, 4,4'-diaminodiphenyl ether, pyrometic acid anhydride, 3,3 ', 4,4' benzo A semiconductor integrated circuit device according to claim 4 or 5, characterized in that it consists of phenone tetracarboxylic dianhydride. 상기 제2의 도체층은 알루미늄과 실리콘으로 이루어진 합금층임을 특징으로 하는 특허청구의 범위4또는 5기재의 반도체 집적회로 장치.The semiconductor integrated circuit device according to claim 4 or 5, wherein the second conductor layer is an alloy layer made of aluminum and silicon. 상기 제2의 도체층에 포함되는 실리콘은 0.1~10중량%인 것을 특징으로 하는 특허청구의 범위7기재의 반도체 집적회로 장치.The silicon integrated circuit device according to claim 7, wherein the silicon contained in the second conductor layer is 0.1 to 10% by weight. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019820001006A 1981-03-20 1982-03-09 Semiconductor integrated circuit device KR830009649A (en)

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JP56039425A JPS57154857A (en) 1981-03-20 1981-03-20 Semiconductor integrated circuit device
JP81-39425 1981-03-20

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JP (1) JPS57154857A (en)
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DE (1) DE3208650A1 (en)
FR (1) FR2502398B1 (en)
GB (1) GB2096826A (en)
IT (1) IT1195785B (en)

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US5260604A (en) * 1988-09-27 1993-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with improved immunity to contact and conductor defects
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FR2502398A1 (en) 1982-09-24
IT1195785B (en) 1988-10-27
FR2502398B1 (en) 1985-10-11
GB2096826A (en) 1982-10-20
DE3208650A1 (en) 1982-10-07
JPS57154857A (en) 1982-09-24
IT8220145A0 (en) 1982-03-12

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