KR780000484B1 - Anisotropic etching of silicon and germanium - Google Patents

Anisotropic etching of silicon and germanium

Info

Publication number
KR780000484B1
KR780000484B1 KR7201398A KR720001398A KR780000484B1 KR 780000484 B1 KR780000484 B1 KR 780000484B1 KR 7201398 A KR7201398 A KR 7201398A KR 720001398 A KR720001398 A KR 720001398A KR 780000484 B1 KR780000484 B1 KR 780000484B1
Authority
KR
South Korea
Prior art keywords
germanium
silicon
anisotropic etching
anisotropic
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR7201398A
Other languages
English (en)
Korean (ko)
Inventor
Charles Erdman William
Felex Schmidt Paul
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of KR780000484B1 publication Critical patent/KR780000484B1/ko
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
KR7201398A 1971-09-22 1972-09-16 Anisotropic etching of silicon and germanium Expired KR780000484B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18289171A 1971-09-22 1971-09-22

Publications (1)

Publication Number Publication Date
KR780000484B1 true KR780000484B1 (en) 1978-10-24

Family

ID=22670506

Family Applications (1)

Application Number Title Priority Date Filing Date
KR7201398A Expired KR780000484B1 (en) 1971-09-22 1972-09-16 Anisotropic etching of silicon and germanium

Country Status (12)

Country Link
US (1) US3738881A (enExample)
JP (1) JPS5212060B2 (enExample)
KR (1) KR780000484B1 (enExample)
BE (1) BE789090A (enExample)
CA (1) CA954425A (enExample)
CH (1) CH582755A5 (enExample)
DE (1) DE2245809C3 (enExample)
FR (1) FR2153384B1 (enExample)
GB (1) GB1357831A (enExample)
IT (1) IT969438B (enExample)
NL (1) NL166361C (enExample)
SE (1) SE380543B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013502A (en) * 1973-06-18 1977-03-22 Texas Instruments Incorporated Stencil process for high resolution pattern replication
US3990925A (en) * 1975-03-31 1976-11-09 Bell Telephone Laboratories, Incorporated Removal of projections on epitaxial layers
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
US6060237A (en) 1985-02-26 2000-05-09 Biostar, Inc. Devices and methods for optical detection of nucleic acid hybridization
US4680243A (en) * 1985-08-02 1987-07-14 Micronix Corporation Method for producing a mask for use in X-ray photolithography and resulting structure
US5482830A (en) * 1986-02-25 1996-01-09 Biostar, Inc. Devices and methods for detection of an analyte based upon light interference
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop
US4996627A (en) * 1989-01-30 1991-02-26 Dresser Industries, Inc. High sensitivity miniature pressure transducer
US4918030A (en) * 1989-03-31 1990-04-17 Electric Power Research Institute Method of forming light-trapping surface for photovoltaic cell and resulting structure
US5116464A (en) * 1989-06-02 1992-05-26 Massachusetts Institute Of Technology Cesium hydroxide etch of a semiconductor crystal
AU6513790A (en) * 1989-09-18 1991-04-18 Biostar Medical Products, Inc. Apparatus for detection of an immobilized analyte
US5639671A (en) * 1989-09-18 1997-06-17 Biostar, Inc. Methods for optimizing of an optical assay device
US5541057A (en) * 1989-09-18 1996-07-30 Biostar, Inc. Methods for detection of an analyte
US5550063A (en) * 1991-02-11 1996-08-27 Biostar, Inc. Methods for production of an optical assay device
US5955377A (en) * 1991-02-11 1999-09-21 Biostar, Inc. Methods and kits for the amplification of thin film based assays
US5418136A (en) * 1991-10-01 1995-05-23 Biostar, Inc. Devices for detection of an analyte based upon light interference
US5494829A (en) * 1992-07-31 1996-02-27 Biostar, Inc. Devices and methods for detection of an analyte based upon light interference
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
US5552272A (en) * 1993-06-10 1996-09-03 Biostar, Inc. Detection of an analyte by fluorescence using a thin film optical device
US6114248A (en) * 1998-01-15 2000-09-05 International Business Machines Corporation Process to reduce localized polish stop erosion
US8021483B2 (en) 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
WO2003104900A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning compositions containing oxidizers and organic solvents
US6874713B2 (en) 2002-08-22 2005-04-05 Dow Corning Corporation Method and apparatus for improving silicon processing efficiency
US7270706B2 (en) 2004-10-04 2007-09-18 Dow Corning Corporation Roll crusher to produce high purity polycrystalline silicon chips
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
US9873833B2 (en) * 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof

Also Published As

Publication number Publication date
JPS4840380A (enExample) 1973-06-13
GB1357831A (en) 1974-06-26
NL166361C (nl) 1981-07-15
CA954425A (en) 1974-09-10
DE2245809B2 (de) 1977-09-01
CH582755A5 (enExample) 1976-12-15
DE2245809C3 (de) 1978-04-27
BE789090A (fr) 1973-01-15
DE2245809A1 (de) 1973-04-05
JPS5212060B2 (enExample) 1977-04-04
FR2153384A1 (enExample) 1973-05-04
US3738881A (en) 1973-06-12
NL7212612A (enExample) 1973-03-26
FR2153384B1 (enExample) 1976-10-29
NL166361B (nl) 1981-02-16
IT969438B (it) 1974-03-30
SE380543B (sv) 1975-11-10

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