KR20260006694A - 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법 - Google Patents

플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Info

Publication number
KR20260006694A
KR20260006694A KR1020257042468A KR20257042468A KR20260006694A KR 20260006694 A KR20260006694 A KR 20260006694A KR 1020257042468 A KR1020257042468 A KR 1020257042468A KR 20257042468 A KR20257042468 A KR 20257042468A KR 20260006694 A KR20260006694 A KR 20260006694A
Authority
KR
South Korea
Prior art keywords
source
period
frequency power
frequency
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257042468A
Other languages
English (en)
Korean (ko)
Inventor
치시오 코시미즈
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20260006694A publication Critical patent/KR20260006694A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020257042468A 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법 Pending KR20260006694A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2022-162643 2022-10-07
JP2022162643 2022-10-07
JPJP-P-2022-178137 2022-11-07
JP2022178137 2022-11-07
PCT/JP2023/034969 WO2024075596A1 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法
KR1020247042040A KR102905047B1 (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020247042040A Division KR102905047B1 (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Publications (1)

Publication Number Publication Date
KR20260006694A true KR20260006694A (ko) 2026-01-13

Family

ID=90608317

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257042468A Pending KR20260006694A (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법
KR1020247042040A Active KR102905047B1 (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020247042040A Active KR102905047B1 (ko) 2022-10-07 2023-09-26 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법

Country Status (5)

Country Link
US (1) US20250132129A1 (https=)
JP (2) JP7612949B2 (https=)
KR (2) KR20260006694A (https=)
CN (1) CN119923954A (https=)
WO (1) WO2024075596A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053764A1 (ja) * 2024-09-05 2026-03-12 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Also Published As

Publication number Publication date
TW202431341A (zh) 2024-08-01
JP7612949B2 (ja) 2025-01-14
CN119923954A (zh) 2025-05-02
WO2024075596A1 (ja) 2024-04-11
JPWO2024075596A1 (https=) 2024-04-11
US20250132129A1 (en) 2025-04-24
KR20250025370A (ko) 2025-02-21
JP2025041838A (ja) 2025-03-26
KR102905047B1 (ko) 2025-12-29

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PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

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