JPWO2024075596A1 - - Google Patents

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Publication number
JPWO2024075596A1
JPWO2024075596A1 JP2024555743A JP2024555743A JPWO2024075596A1 JP WO2024075596 A1 JPWO2024075596 A1 JP WO2024075596A1 JP 2024555743 A JP2024555743 A JP 2024555743A JP 2024555743 A JP2024555743 A JP 2024555743A JP WO2024075596 A1 JPWO2024075596 A1 JP WO2024075596A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024555743A
Other languages
Japanese (ja)
Other versions
JP7612949B2 (ja
JPWO2024075596A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024075596A1 publication Critical patent/JPWO2024075596A1/ja
Publication of JPWO2024075596A5 publication Critical patent/JPWO2024075596A5/ja
Priority to JP2024227718A priority Critical patent/JP2025041838A/ja
Application granted granted Critical
Publication of JP7612949B2 publication Critical patent/JP7612949B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2024555743A 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法 Active JP7612949B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024227718A JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022162643 2022-10-07
JP2022162643 2022-10-07
JP2022178137 2022-11-07
JP2022178137 2022-11-07
PCT/JP2023/034969 WO2024075596A1 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024227718A Division JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

Publications (3)

Publication Number Publication Date
JPWO2024075596A1 true JPWO2024075596A1 (https=) 2024-04-11
JPWO2024075596A5 JPWO2024075596A5 (https=) 2024-12-17
JP7612949B2 JP7612949B2 (ja) 2025-01-14

Family

ID=90608317

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024555743A Active JP7612949B2 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法
JP2024227718A Pending JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024227718A Pending JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

Country Status (5)

Country Link
US (1) US20250132129A1 (https=)
JP (2) JP7612949B2 (https=)
KR (2) KR20260006694A (https=)
CN (1) CN119923954A (https=)
WO (1) WO2024075596A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053764A1 (ja) * 2024-09-05 2026-03-12 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210050185A1 (en) * 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications
JP2021534545A (ja) * 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021534545A (ja) * 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
US20210050185A1 (en) * 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications

Also Published As

Publication number Publication date
TW202431341A (zh) 2024-08-01
JP7612949B2 (ja) 2025-01-14
CN119923954A (zh) 2025-05-02
WO2024075596A1 (ja) 2024-04-11
US20250132129A1 (en) 2025-04-24
KR20250025370A (ko) 2025-02-21
JP2025041838A (ja) 2025-03-26
KR102905047B1 (ko) 2025-12-29
KR20260006694A (ko) 2026-01-13

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