JPWO2024075596A1 - - Google Patents
Info
- Publication number
- JPWO2024075596A1 JPWO2024075596A1 JP2024555743A JP2024555743A JPWO2024075596A1 JP WO2024075596 A1 JPWO2024075596 A1 JP WO2024075596A1 JP 2024555743 A JP2024555743 A JP 2024555743A JP 2024555743 A JP2024555743 A JP 2024555743A JP WO2024075596 A1 JPWO2024075596 A1 JP WO2024075596A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024227718A JP2025041838A (ja) | 2022-10-07 | 2024-12-24 | プラズマ処理装置、電源システム、及び周波数制御方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022162643 | 2022-10-07 | ||
| JP2022162643 | 2022-10-07 | ||
| JP2022178137 | 2022-11-07 | ||
| JP2022178137 | 2022-11-07 | ||
| PCT/JP2023/034969 WO2024075596A1 (ja) | 2022-10-07 | 2023-09-26 | プラズマ処理装置、電源システム、及び周波数制御方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024227718A Division JP2025041838A (ja) | 2022-10-07 | 2024-12-24 | プラズマ処理装置、電源システム、及び周波数制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024075596A1 true JPWO2024075596A1 (https=) | 2024-04-11 |
| JPWO2024075596A5 JPWO2024075596A5 (https=) | 2024-12-17 |
| JP7612949B2 JP7612949B2 (ja) | 2025-01-14 |
Family
ID=90608317
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024555743A Active JP7612949B2 (ja) | 2022-10-07 | 2023-09-26 | プラズマ処理装置、電源システム、及び周波数制御方法 |
| JP2024227718A Pending JP2025041838A (ja) | 2022-10-07 | 2024-12-24 | プラズマ処理装置、電源システム、及び周波数制御方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024227718A Pending JP2025041838A (ja) | 2022-10-07 | 2024-12-24 | プラズマ処理装置、電源システム、及び周波数制御方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250132129A1 (https=) |
| JP (2) | JP7612949B2 (https=) |
| KR (2) | KR20260006694A (https=) |
| CN (1) | CN119923954A (https=) |
| WO (1) | WO2024075596A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026053764A1 (ja) * | 2024-09-05 | 2026-03-12 | 東京エレクトロン株式会社 | プラズマ処理装置、電源システム、及びプラズマ処理方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210050185A1 (en) * | 2019-08-13 | 2021-02-18 | Mks Instruments, Inc. | Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications |
| JP2021534545A (ja) * | 2018-08-14 | 2021-12-09 | 東京エレクトロン株式会社 | プラズマ処理のための制御のシステム及び方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5319150B2 (ja) | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体 |
-
2023
- 2023-09-26 KR KR1020257042468A patent/KR20260006694A/ko active Pending
- 2023-09-26 KR KR1020247042040A patent/KR102905047B1/ko active Active
- 2023-09-26 CN CN202380049744.XA patent/CN119923954A/zh active Pending
- 2023-09-26 WO PCT/JP2023/034969 patent/WO2024075596A1/ja not_active Ceased
- 2023-09-26 JP JP2024555743A patent/JP7612949B2/ja active Active
-
2024
- 2024-12-24 JP JP2024227718A patent/JP2025041838A/ja active Pending
- 2024-12-24 US US19/000,700 patent/US20250132129A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021534545A (ja) * | 2018-08-14 | 2021-12-09 | 東京エレクトロン株式会社 | プラズマ処理のための制御のシステム及び方法 |
| US20210050185A1 (en) * | 2019-08-13 | 2021-02-18 | Mks Instruments, Inc. | Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202431341A (zh) | 2024-08-01 |
| JP7612949B2 (ja) | 2025-01-14 |
| CN119923954A (zh) | 2025-05-02 |
| WO2024075596A1 (ja) | 2024-04-11 |
| US20250132129A1 (en) | 2025-04-24 |
| KR20250025370A (ko) | 2025-02-21 |
| JP2025041838A (ja) | 2025-03-26 |
| KR102905047B1 (ko) | 2025-12-29 |
| KR20260006694A (ko) | 2026-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
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| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
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| A61 | First payment of annual fees (during grant procedure) |
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